SW740
Abstract: Samwin
Text: SAMWIN SW740 General Description Features N-Channel MOSFET BVDSS Minimum RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) This power MOSFET is produced with advanced VDMOS process, planar stripe.This technology enable power MOSFET to have better characteristics,
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SW740
SW740
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Samwin* sw640
Abstract: Samwin SW640
Text: SAMWIN SW640 General Description Features N-Channel MOSFET BVDSS Minimum RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) This power MOSFET is produced in SAMWIN with advanced VDMOS process, planar stripe.This technology enable power MOSFET to have better
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SW640
200nF
300nF
Samwin* sw640
Samwin
SW640
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SW7N60
Abstract: Samwin
Text: SAMWIN SW7N60 Features General Description N-Channel MOSFET BVDSS Minimum RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ℃) This power MOSFET is produced in CHMC with advanced VDMOS process, planar stripe. This technology enable power MOSFET to have better
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SW7N60
200nF
300nF
SW7N60
Samwin
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Samwin
Abstract: sw840
Text: SAMWIN SW840 General Description Features N-Channel MOSFET BVDSS Minimum RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) This power MOSFET is produced with advanced VDMOS process, planar stripe. This technology enable power MOSFET to have better characteristics, such as
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SW840
Samwin
sw840
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SW50N06
Abstract: Samwin* sw50n06 Samwin samwin sw50n06 CHMC sw50n chmc equivalent
Text: SAMWIN SW50N06 General Description Features N-Channel MOSFET BVDSS Minimum RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) This power MOSFET is produced in CHMC with advanced VDMOS process, planar stripe. This technology enable power MOSFET to have better
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SW50N06
023ohm
SW50N06
Samwin* sw50n06
Samwin
samwin sw50n06
CHMC
sw50n
chmc equivalent
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LK141
Abstract: 60W VHF TV RF amplifier
Text: An Introduction to Polyfet RF Devices Who is Polyfet RF Devices? Established in 1987, Polyfet RF Devices is a California based manufacturer of broadband LDMOS, VDMOS, and GaN power transistors and power modules. Polyfet’s Financials • • • • • Private corporation
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ISO9000
5208A
50Vdc
4Q2012.
LK141
60W VHF TV RF amplifier
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"CHAPTER 1 Introduction to Power Semiconductors"
Abstract: schematic diagram on line UPS 10kva sith thyristor "static induction thyristor" "Power Semiconductor Applications" Philips Power Semiconductor Applications Philips Semiconductors ups schematic 10kva static induction Thyristor CHAPTER 1 Introduction to Power Semiconductors SIT Static Induction Transistor
Text: Introduction Power Semiconductor Applications Philips Semiconductors CHAPTER 1 Introduction to Power Semiconductors 1.1 General 1.2 Power MOSFETS 1.3 High Voltage Bipolar Transistors 1 Introduction Power Semiconductor Applications Philips Semiconductors General
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Samwin sw830
Abstract: SW830 Samwin CHMC 37
Text: SAMWIN SW830 General Description Features N-Channel MOSFET BVDSS Minimum RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) This power MOSFET is produced in CHMC with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time,
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SW830
Samwin sw830
SW830
Samwin
CHMC 37
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Samwin
Abstract: SW730 73WD
Text: SAMWIN SW730 General Description Features N-Channel MOSFET BVDSS Minimum RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) This power MOSFET is produced in CHMC with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time,
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SW730
Samwin
SW730
73WD
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APT100GF60LR
Abstract: 1200 volt mosfet FREDFETs sot-227 footprint APT75GP120JDF3 APT609RK3VFR APT8075BVR APT5010jvr APT20M19JVR APT1001RBVR
Text: Discrete Power Products 2003 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of
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transistor 9567
Abstract: transistor J128 philips catalog potentiometer 72741 MDA480 MOS marking 843 D 843 Power Transistor MDA483 transistor K 1413
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLF521 UHF power MOS transistor Product specification November 1992 Philips Semiconductors Product specification UHF power MOS transistor FEATURES BLF521 PIN CONFIGURATION • High power gain • Easy power control ook, halfpage
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BLF521
MBB072
BLF521
OT172D
15-Aug-02)
transistor 9567
transistor J128
philips catalog potentiometer
72741
MDA480
MOS marking 843
D 843 Power Transistor
MDA483
transistor K 1413
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Samwin
Abstract: chmc SW634
Text: SAMWIN SW634 General Description Features N-Channel MOSFET BVDSS Minimum RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) This power MOSFET is produced in CHMC with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on
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SW634
Samwin
chmc
SW634
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Samwin
Abstract: SW4N60 CHMC
Text: SAMWIN SW4N60 General Description Features N-Channel MOSFET BVDSS Minimum RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) : 600 V : 2.2 ohm : 4.0 A : 20 nc : 73 W This power MOSFET is produced in CHMC with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better
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SW4N60
Samwin
SW4N60
CHMC
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SW630
Abstract: Samwin* sw630 Samwin emosfet 2250u chmc
Text: SAMWIN SW630 General Description Features N-Channel MOSFET BVDSS Minimum RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) : 200 V : 0.4 ohm : 9.0 A : 26 nc : 72 W This power MOSFET is produced in CHMC with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better
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SW630
SW630
Samwin* sw630
Samwin
emosfet
2250u
chmc
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HIP4080 amplifier circuit diagram class D
Abstract: class d amplifier schematic hip4080 jfet normally off to220 mosfet L 3055 HIP4080 ITL5-1 dual jfet transistor array AN9404 oscilloscope schematic EAS 200 Switching Power supply with HIP4080A
Text: No. AN9539 Intersil Intelligent Power May 1996 HIP2060, N-Channel Half-Bridge Power MOSFET Array Author: Edwin C. Jabillo Abstract The HIP2060 is a dual MOSFET array topology in a half-bridge configuration which represents a new innovation of power semiconductor devices that integrates two matched power transistors in a chip. The HIP2060 power MOSFET array is an
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AN9539
HIP2060,
HIP2060
HIP4080 amplifier circuit diagram class D
class d amplifier schematic hip4080
jfet normally off to220
mosfet L 3055
HIP4080
ITL5-1
dual jfet transistor array
AN9404
oscilloscope schematic EAS 200
Switching Power supply with HIP4080A
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class d amplifier schematic hip4080
Abstract: HIP4080 amplifier circuit diagram class D AN9404 AN9539 mosfet L 3055 1350P AN9405 0-60V HIP2060 MO-169AB
Text: TM No. AN9539 Intersil Intelligent Power May 1996 HIP2060, N-Channel Half-Bridge Power MOSFET Array Author: Edwin C. Jabillo Abstract The HIP2060 is a dual MOSFET array topology in a half-bridge configuration which represents a new innovation of power semiconductor devices that integrates two matched power transistors in a chip. The HIP2060 power MOSFET array is an
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AN9539
HIP2060,
HIP2060
class d amplifier schematic hip4080
HIP4080 amplifier circuit diagram class D
AN9404
AN9539
mosfet L 3055
1350P
AN9405
0-60V
MO-169AB
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CAR IGNITION WITH IGBTS
Abstract: conventional car power window electrical system Car electronics IGNITION DRIVER "Intelligent Power Devices" circuit diagram of car central lock system car ignition coil Driver ignition spark Window Lift Controller Intelligent Automotive Ignition System TRANSISTOR VB027
Text: APPLICATION NOTE AN INTRODUCTION TO INTELLIGENT POWER by A. Hayes ABSTRACT 1. INTRODUCTION This paper gives an overview of one of the fastest growing and most exciting areas of power electronics: Intelligent Power technology. It explains what the term Intelligent Power means, why intelligent
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class d amplifier schematic hip4080
Abstract: hip4080 h-bridge gate drive schematics circuit HIP4080 amplifier circuit diagram class D oscilloscope schematic EAS 200 lem la 50p mosfet p 3055 RM1S HIP2060 mosfet L 3055 high power fet audio amplifier schematic
Text: Harris Semiconductor No. AN9539 Harris Intelligent Power May 1996 HIP2060, N-Channel Half-Bridge Power MOSFET Array Author: Edwin C. Jabillo Abstract The HIP2060 is a dual MOSFET array topology in a half-bridge configuration which represents a new innovation of power semiconductor devices that integrates two matched power transistors in a chip. The HIP2060 power MOSFET array is an
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AN9539
HIP2060,
HIP2060
1-800-4-HARRIS
class d amplifier schematic hip4080
hip4080 h-bridge gate drive schematics circuit
HIP4080 amplifier circuit diagram class D
oscilloscope schematic EAS 200
lem la 50p
mosfet p 3055
RM1S
mosfet L 3055
high power fet audio amplifier schematic
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1E14
Abstract: 2E12 3E12 FRF450R4 JANSR2N7298
Text: JANSR2N7298 Formerly FRF450R4 Data Sheet [ /Title JANS R2N72 98 /Subject (Radiation Hardened, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, Radiation Hardened, NChannel Power MOSFET) /Creator () Radiation Hardened, N-Channel Power
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JANSR2N7298
FRF450R4
R2N72
1000K
1E14
2E12
3E12
FRF450R4
JANSR2N7298
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TEA1620
Abstract: BUK2114 IRF540 n-channel MOSFET BATTERY CHARGER buk2914-50syts TEA1507 BUK2114-50SYTS TEA1552 PHD78NQ bu4508dx BU2527
Text: Semiconductors Power Management Selection Guide 2005 page 1 Semiconductors Welcome to Philips’ Power Management selection guide 2005. Inside you will discover just how easily you can tap into the design freedom offered by our Power Management portfolio. Our advanced power technologies and products cover virtually all aspects of
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AN72
Abstract: AN-7500
Text: Understanding Power MOSFETs Application Note Introduction [ /Title AN72 44 /Subject (Under standing Power MOSFETs, Intersil Corporation) /Autho r () /Keywords () /Creator () /DOCI NFO pdfmark [ /PageMode /UseOutlines /DOCVIEW pdfmark Power MOSFETs (Metal Oxide Semiconductor, Field Effect
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10mhz mosfet
Abstract: an7244 conventional bipolar
Text: Harris Semiconductor No. AN7244.2 Harris Power MOSFETs September 1993 Understanding Power MOSFETs Author: Tom McNulty Power MOSFETs Metal Oxide Semiconductor, Field Effect Transistors differ from bipolar transistors in operating principles, specifications, and performance. In fact, the
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AN7244
10MHz.
10mhz mosfet
conventional bipolar
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Untitled
Abstract: No abstract text available
Text: FSPL130R, FSPL130F Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Intersil Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the
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FSPL130R,
FSPL130F
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1E14
Abstract: 2E12 FSPL234D1 FSPL234F FSPL234R FSPL234R3 diode vg 902 c2
Text: FSPL234R, FSPL234F Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Fairchild Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the
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FSPL234R,
FSPL234F
1E14
2E12
FSPL234D1
FSPL234F
FSPL234R
FSPL234R3
diode vg 902 c2
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