DIAC DB2
Abstract: BD469 C2N3904 pin configuration transistor BC547 smd packaging C2N5551 cbc337 D1 DB2 Diac SMD SOT23 transistor MARK Y2 A1941 1N4007 MINI MELF
Text: Quick Reference Data Wafer Fabrication Surface Mounted Devices Leaded Semiconductor Devices Electronic Manufacturing Services Switching Diodes & Arrays Schottky Barrier Diodes Zener Diodes Rectifiers Small Signal Transistors Medium Power Transistors Power Transistors
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C-120
OT-23
OT23-6L
DO-213AB
DO-214AC
DO-214AA
OT-223
O-252
DIAC DB2
BD469
C2N3904
pin configuration transistor BC547 smd packaging
C2N5551
cbc337
D1 DB2 Diac
SMD SOT23 transistor MARK Y2
A1941
1N4007 MINI MELF
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UJT 2n3904
Abstract: transistor 2N4033 ujt 2N6027 2n4209 datasheet mj15003 equivalent transistor 2N5401 mj15004 2N4393 MJ15003 MJ15004 BAV45
Text: Selection Guide Page Small Signal Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Bipolar Power Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Programmable UJT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
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BUT11ApX equivalent
Abstract: PH4030AL philips uhp lamp driver power supply circuit diagram using ic tea1530 BT136 testing power management selection guide BU4508DX equivalent 2n7002 12w nxp BSN304 equivalent bu2508af equivalent
Text: Power Management selection guide 2008 Leading the power efficient connected world Table of contents Power MOSFETs 4 Automotive MOSFETs 16 Power Bipolar Transistors 20 Complex Discretes 22 Small-signal bipolar transistors 28 SCR's Triacs and Trigger Devices
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2n3773 power Amplifier circuit diagrams
Abstract: SCR Handbook, rca HC2000H rca transistor npn a13 B0241C npn transistor RCA 467 40659 triac t6440m RCa T2850D DIAC D3202U
Text: RCA Power Devices This DATABOOK contains com plete technical information on the full line o f RCA solid-state power devices: power transistors, rf power transistors, power hybrid circuits, triacs, SCR’s, diacs, silicon rectifiers, and rectifier assemblies. A complete
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AN-6671
G4000)
G4000
2n3773 power Amplifier circuit diagrams
SCR Handbook, rca
HC2000H
rca transistor npn a13
B0241C
npn transistor RCA 467
40659
triac t6440m
RCa T2850D
DIAC D3202U
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NPN Transistor 600V TO-220
Abstract: 2SC4055
Text: Power Transistors INCHANGE 2SC4055 Silicon NPN Transistors Features BCE ﹒ With TO-220 package ﹒ Switching power transistor Absolute Maximum Ratings Tc=25℃ SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage 600 V VCEO Collector to emitter voltage
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2SC4055
O-220
O-220
NPN Transistor 600V TO-220
2SC4055
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2SC4060
Abstract: NPN Transistor 600V 2A
Text: INCHANGE Power Transistors 2SC4060 Silicon NPN Transistors Features B C E •With TO-247 package ·Switching power transistor Absolute Maximum Ratings Tc=25℃ SYMBOL PARAMETER RATING UNIT VCB Collector to base voltage 600 V VCEO Collector to emitter voltage
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2SC4060
O-247
O-247
2SC4060
NPN Transistor 600V 2A
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TI3007
Abstract: UMT13007 UMT1300S 100C 100-C UMT13006
Text: UMT13006 UMT13007 POWER TRANSISTORS 8A, 700V, Fast Switching, Silicon NPN Mesa FEATURES DE S C R IP T IO N • • • • • • These high voltage glass passivated power transistors, in a plastic TO 220AB package, combine fast switching, low saturation
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UMT13006
TI3007
220AB
UMT1300S
UMT13007
TI3007
UMT13007
100C
100-C
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2sk1058 equivalent
Abstract: MBM300BS6 Hitachi MOSFET 2SK1270 transistor 2sk 12 2sk1645 2SK975 equivalent equivalent transistor 2sk 2SK1058 MOSFET APPLICATION NOTES 2SC297
Text: JfHITACHI POWER TRANSISTORS 1 Contents Page 1. discrete and module devices New Degree of Freedom Hitachi's Power Transistors cover all field applications ranging from low to high frequ encies, also su itab le for fullautomated assembly processes such as surface-mount devices eg. UPAK, MPAK,
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O220F
SP-10
SP-12
SP-12TA
1560D
2sk1058 equivalent
MBM300BS6
Hitachi MOSFET
2SK1270
transistor 2sk 12
2sk1645
2SK975 equivalent
equivalent transistor 2sk
2SK1058 MOSFET APPLICATION NOTES
2SC297
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pin configuration transistor BC547 smd packaging
Abstract: BC547 smd packaging BD469 C2N3904 c5198 CMJE2955T transistor mcr100-8 BC337 TO-92 Generic DIAC DB2 BC337 hie hre hfe
Text: Quick Reference Data Chip/Dice – Diffused Silicon Wafers Surface Mount Devices Leaded Semiconductor Devices Electronic Manufacturing Services Switching Diodes & Arrays Schottky Barrier Diodes Zener Diodes Rectifiers Small Signal Transistors Medium Power Transistors
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DO-35
DO-41
C-120
0406-3K
pin configuration transistor BC547 smd packaging
BC547 smd packaging
BD469
C2N3904
c5198
CMJE2955T
transistor mcr100-8
BC337 TO-92 Generic
DIAC DB2
BC337 hie hre hfe
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RJJ0319DSP
Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram
Text: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?
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R07CS0003EJ0200
RJJ0319DSP
BCR8PM equivalent
RJP30H2
N0201
rjj0319
NP109N055PUJ
rjk5020
RJP30E2DPP
NP75N04YUG
lg washing machine circuit diagram
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75w75
Abstract: UMT13004 UMT13005 SZ-17
Text: POWER TRANSISTORS U MT13004 U MT13005 4A, 700V, Fast Switching, Silicon NPN Mesa FEATU RES DESCRIPTION • • • • • • These high voltage glass passivated power transistors, in a plastic T0-220AB package, combine fast switching, low saturation voltage and rugged E s/b capability. They are
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UMT13004
UMT13005
T0-220AB
SZ173
S61-65Ã
75w75
UMT13005
SZ-17
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"CHAPTER 1 Introduction to Power Semiconductors"
Abstract: schematic diagram on line UPS 10kva sith thyristor "static induction thyristor" "Power Semiconductor Applications" Philips Power Semiconductor Applications Philips Semiconductors ups schematic 10kva static induction Thyristor CHAPTER 1 Introduction to Power Semiconductors SIT Static Induction Transistor
Text: Introduction Power Semiconductor Applications Philips Semiconductors CHAPTER 1 Introduction to Power Semiconductors 1.1 General 1.2 Power MOSFETS 1.3 High Voltage Bipolar Transistors 1 Introduction Power Semiconductor Applications Philips Semiconductors General
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12N60l
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.
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12N60
12N60
QW-R502-170
12N60l
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.
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12N60
12N60
QW-R502-170
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irf 940
Abstract: IRFAC40 TO-204AA
Text: PD - 90587 IRFAC40 600V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAC40 BVDSS RDS(on) ID 600V 1.2Ω 6.2Α The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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IRFAC40
O-204AA/AE)
paramet252-7105
irf 940
IRFAC40
TO-204AA
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Untitled
Abstract: No abstract text available
Text: PD - 90587 IRFAC40 600V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAC40 BVDSS RDS(on) ID 600V 1.2Ω 6.2Α The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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IRFAC40
O-204AA/AE)
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IRFBc40
Abstract: transistor irfbc40 4A,600V IRFBC42 TB334 TA17426
Text: IRFBC40, IRFBC42 Semiconductor 6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 6.2A and 5.4A, 600V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power
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IRFBC40,
IRFBC42
IRFBc40
transistor irfbc40
4A,600V
IRFBC42
TB334
TA17426
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laser range finder schematics
Abstract: schematic satellite finder thyristor cdi Notebook lcd inverter schematic PNP SILICON TRANSISTORS MIL GRADE JANTXV 2N5666 1n5819 trr MICROSEMI 2N2907A scr firing circuit for dc servo driver cdi dc/dc
Text: power conditioning More than solutions, enabling possibilities Discrete Semiconductors Powermite Products Power Schottkys/Rectifiers MOSFETs Bipolar Transistors Silicon Controlled Rectifiers Battery Bypass Circuits Switching Power and Conditioning Signals
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12N60L
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12A, 600V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.
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12N60
O-220
12N60
O-220F
O-220F1
QW-R502-170
12N60L
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UTC12N60
Abstract: 12n60g 12N60L 12n60 12a 600v 12N60 mosfet 12A 600V
Text: UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12A, 600V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.
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12N60
O-220F
O-220
12N60
O-220F1
O-262
QW-R502-170
UTC12N60
12n60g
12N60L
12n60 12a 600v
mosfet 12A 600V
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 12N60K-MT Power MOSFET 12A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N60K-MT are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.
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12N60K-MT
12N60K-MT
QW-R502-B06
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 12N60K-MT Preliminary Power MOSFET 12A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N60K-MT are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.
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12N60K-MT
12N60K-MT
O-220F2
QW-R502-B06
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 7N60A Power MOSFET 7A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N60A is a high voltage N-Channel enhancement mode power field effect transistors and is designed to have minimize on-state resistance , provide superior switching
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7N60A
7N60A
VQW-R502-111
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 7N60A Power MOSFET 7A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N60A is a high voltage N-Channel enhancement mode power field effect transistors and is designed to have minimize on-state resistance , provide superior switching
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7N60A
7N60A
VQW-R502-111
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