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    POWER TRANSISTORS 10A 400V PNP Search Results

    POWER TRANSISTORS 10A 400V PNP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    POWER TRANSISTORS 10A 400V PNP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BZX85C12V

    Abstract: TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E
    Text: SEMICONDUCTORS DISCRETE DEVICES Cathode Anode DO-15 DO-201AD 6.8 x 3.5mm 9.5 x 5.3mm Anode Cathode TO-220AC Fast recovery diodes page 427 Schottky power diodes page 428 Isolated tab triacs page 430 Anode 1 Gate Anode 2 Bridge rectifiers Current regulating diodes


    Original     		PDF DO-15 DO-201AD O-220AC T0202-3 STGP3NB60HD* STGP7NB60HD* STGP3NB60HD STGP7NB60HD BZX85C12V TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E

    SM3159

    Abstract: SM3160 ic pt 2223 POWER TRANSISTORS 10A 400v pnp Magnatec 200w silicon audio power transistor NPN Transistor 1.5A 400V npn transistors 400V
    Text: SM3159 MAGNA TEC COMPLEMENTARY SILICON POWER TRANSISTORS MECHANICAL DATA Dimensions in mm 40.01 1.575 Max. 26.67 (1.050) Max. 4.47 (0.176) Rad. 2 Pls. 22.23 (0.875) Max. 11.43 (0.450) 6.35 (0.250) 1.09 (0.043) 0.97 (0.038) Dia. 1.63 (0.064) 1.52 (0.060)


    Original     		PDF SM3159 SM3159 SM3160 SM3160 ic pt 2223 POWER TRANSISTORS 10A 400v pnp Magnatec 200w silicon audio power transistor NPN Transistor 1.5A 400V npn transistors 400V

    reverse phase control igbt dimmer schematic

    Abstract: SCHEMATIC igbt dimmer SCHEMATIC IGNITION WITH IGBTS SCHEMATIC dimmer igbt induction lamp ballast reverse phase control igbt dimmer AN1491 Electric Welding Machine thyristor SCHEMATIC IGNITION iGBT Bipolar Static Induction Transistor
    Text: AN1491 APPLICATION NOTE IGBT BASICS M. Aleo mario.aleo@st.com 1. INTRODUCTION. IGBTs (Insulated Gate Bipolar Transistors) combine the simplicity of drive and the excellent fast switching capability of the MOSFET structure with the ability to handle high current values typical of a


    Original     		PDF AN1491 1980s, 130kHz. reverse phase control igbt dimmer schematic SCHEMATIC igbt dimmer SCHEMATIC IGNITION WITH IGBTS SCHEMATIC dimmer igbt induction lamp ballast reverse phase control igbt dimmer AN1491 Electric Welding Machine thyristor SCHEMATIC IGNITION iGBT Bipolar Static Induction Transistor

    70413080

    Abstract: 70473180 SAC-187 Motorola 70483180 70483100 70484200 70487478 70484140 SJ-6357 70483180
    Text: SEMI-CONDUCTOR/TRANSISTOR CROSS-REFERENCE LIST Peavey Electronics Corporation ORIGINAL IN-HOUSE NUMBER ALTERNATE IN-HOUSE NUMBER FIELD REPLACEMENT NUMBER ORDER NUMBER NOTES TO-92 TRANSISTORS 2N3391 A SPS-953(A, B) MPS-8097, 2N6520 MPS-A18, 2N6539, SK-3919


    Original     		PDF 2N3391 SPS-953 MPS-8097, 2N6520 MPS-A18, 2N6539, SK-3919 2N4249 SPS-690, PN-2907A 70413080 70473180 SAC-187 Motorola 70483180 70483100 70484200 70487478 70484140 SJ-6357 70483180

    radfet

    Abstract: SiC JFET fet diode date sheet pnp 400V SDR622 pnp 400v 10a SDR620 POWER TRANSISTORS 10A 400v pnp HF IGBT SiC Thyristor
    Text: SDR620/59 SDR621/59 SDR622/59 Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 20 AMPS 100 - 200 VOLTS ULTRA FAST RECOVERY RECTIFIER Designer’s Data Sheet


    Original     		PDF SDR620/59 SDR621/59 SDR622/59 SDR62 200oC 1N5812 RC0117A RC0117 Q312rD radfet SiC JFET fet diode date sheet pnp 400V SDR622 pnp 400v 10a SDR620 POWER TRANSISTORS 10A 400v pnp HF IGBT SiC Thyristor

    LSI SAS 2208

    Abstract: li shin smps 500W P channel 600v 20a IGBT optocoupler NAND THREE PHASE SOLID STATE RELAY WITH ZVS smps 500w half bridge smps igbt h-bridge igbt pwm schematics circuit 600 watt smps schematic
    Text: 1 Discrete Features Optoelectronics • Independent current limiting and shutdown controls · VTT output sources and sinks up to 3A · Tracking VDDQ /2 to within ±2% · VREF output follows VTT within ±40mV · Comprehensive New Product List · New Product Highlights


    Original     		PDF FAN5236 900mV 28-lead Power247TM, LSI SAS 2208 li shin smps 500W P channel 600v 20a IGBT optocoupler NAND THREE PHASE SOLID STATE RELAY WITH ZVS smps 500w half bridge smps igbt h-bridge igbt pwm schematics circuit 600 watt smps schematic

    SG3524 application notes speed control

    Abstract: how to convert 220v ac to 12v dc DC motor speed control using 555 timer 12v DC motor speed control using scr PZT61343 dc 220v motor speed control circuit with scr dc shunt motor ne555 220v h bridge sg3524 sg3524 drive motor shutdown techniques
    Text: Insulated-Gate Transistors Simplify AC-Motor Speed Control Application Note [ /Title AN93 18 /Subject (InsulatedGate Transistors Simplify ACMotor Speed Control) /Autho r () /Keywords (Intersil Corporation, Semiconductor, Avalanche Energy Rated, Switch ing


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    radfet

    Abstract: zener diode 562 1N58121 SiC IGBT High Power Modules triac 200a SDR620 SDR622 12v dc full wave bridge rectifier firestone pnp 400V
    Text: SDR620/59 SDR621/59 SDR622/59 Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 20 AMPS 100 - 200 VOLTS ULTRA FAST RECOVERY RECTIFIER Designer’s Data Sheet


    Original     		PDF SDR620/59 SDR621/59 SDR622/59 SDR62 1N5812-16 Uc15s20 RC0117B RC0117 E-100386 Q312rD radfet zener diode 562 1N58121 SiC IGBT High Power Modules triac 200a SDR620 SDR622 12v dc full wave bridge rectifier firestone pnp 400V

    Untitled

    Abstract: No abstract text available
    Text: SDR620/59 SDR621/59 SDR622/59 Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 20 AMPS 100 - 200 VOLTS ULTRA FAST RECOVERY RECTIFIER Designer’s Data Sheet


    Original     		PDF SDR620/59 SDR621/59 SDR622/59 SDR62 1N5812-1 Uc15s20 RC0117B RC0117 E-100386 Q312rD

    ED26 diode

    Abstract: mos Turn-off Thyristor MOS Controlled Thyristor AN8602 ED-26 diode mosfet controlled thyristor MOS-Gated Thyristor ford igbt P channel 600v 20a IGBT MOTOROLA N CHANNEL POWER MOS FET TRANSISTORS
    Text: Harris Semiconductor No. AN8602.1 Harris Power MOSFETs May 1992 The IGBTs - A New High Conductance MOS-Gated Device Author: J.P. Russell, A.M. Goodman, L.A. Goodman and J.M. Neilson Abstract ALUMINUM A new MOS gate-controlled power switch with a very low onresistance is described. The fabrication process is similar to


    Original     		PDF AN8602 ED26 diode mos Turn-off Thyristor MOS Controlled Thyristor ED-26 diode mosfet controlled thyristor MOS-Gated Thyristor ford igbt P channel 600v 20a IGBT MOTOROLA N CHANNEL POWER MOS FET TRANSISTORS

    ED26 diode

    Abstract: 8602 RECTIFIER AN8602 mos Turn-off Thyristor 8602 RECTIFIER 4 PIN P channel 600v 20a IGBT Pelly P channel 600v 30a IGBT applications of mos controlled thyristor INTERSIL 1981
    Text: The IGBTs - A New High Conductance MOS-Gated Device Application Note Abstract May 1992 ALUMINUM A new MOS gate-controlled power switch with a very low onresistance is described. The fabrication process is similar to that of an n-channel power MOSFET but employs an n-epitaxial layer grown on a p+ substrate. In operation, the


    Original     		PDF AN8602 ED26 diode 8602 RECTIFIER mos Turn-off Thyristor 8602 RECTIFIER 4 PIN P channel 600v 20a IGBT Pelly P channel 600v 30a IGBT applications of mos controlled thyristor INTERSIL 1981

    ne555 vco

    Abstract: how to convert 220v ac to 12v dc 220v DC MOTOR SPEED CONTROL USING ic regulator ic 555 timer gate drive scr AC OVERload PROTECTION CIRCUIT 555 timer DC motor speed control using 555 timer and mosfet ne555 220v dc motor 220V speed control with scr normal relay for controlling 230v ac by using 5v AN9318
    Text: Insulated-Gate Transistors Simplify AC-Motor Speed Control Application Note An IGT’s few input requirements and low On-state resistance simplify drive circuitry and increase power efficiency in motorcontrol applications. The voltage-controlled, MOSFET-like


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    transistor ZTX108

    Abstract: replacement ztx108 Lamps FLASH TUBE xenon list of super E line NPN Transistor Mosfet replacement for 2N3055 PNP Relay Driver automotive relay driver circuit using darlington xenon linear flash lamps 2N3055 TO220 2N3055 power circuit
    Text: Application Note 4 Issue 2 January 1996 Centre Collector E-Line Applications An Overview of Package Capability and Applications Advantages David Bradbury Introduction Product Range This Application Note describes the product range, important package characteristics including construction


    Original     		PDF ZVN2120C FXTA42 transistor ZTX108 replacement ztx108 Lamps FLASH TUBE xenon list of super E line NPN Transistor Mosfet replacement for 2N3055 PNP Relay Driver automotive relay driver circuit using darlington xenon linear flash lamps 2N3055 TO220 2N3055 power circuit

    applications of mos controlled thyristor

    Abstract: MOS Controlled Thyristor Semiconductor Power AN-7504 mosfet controlled thyristor mos Turn-off Thyristor P channel 600v 20a IGBT ED26 diode Pelly 10A fast Gate Turn-off Thyristor transistor Ia 15 rca
    Text: The IGBTs - A New High Conductance MOS-Gated Device Application Note Abstract Title N86 bt he BTs w gh ncce OSted vice utho eyrds terrpoon, minctor, er OCI O frk geode May 1992 ALUMINUM A new MOS gate-controlled power switch with a very low onresistance is described. The fabrication process is similar to


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    42ap

    Abstract: BUW42A BUW42 BUW42P ISOWATT218 BUW42AP TO3 package RthJC BUW41A BUW42PFI 42PFI
    Text: 735^537 oosaagq a • SGS-THOMSON S G S-THOMSON B U W 42/42P/42P F I B U W 4 2A /4 2A P /42 A P F I 3DE 3> HIGH VOLTAGË POWER SWITCH DESCRIPTION The BUW42/A, BUW42P/42AP and BUW42PFI/ APFI are silicon multiepitaxial mesa PNP transistors mounted respectively in TO-3 metal case, TO-218


    OCR Scan     		PDF BUW42/42P/42PFI BUW42A/42AP/42APFI BUW42/A, BUW42P/42AP BUW42PFI/ O-218 ISOWATT218 42/P/PFI 500ms 42ap BUW42A BUW42 BUW42P BUW42AP TO3 package RthJC BUW41A BUW42PFI 42PFI

    POWER TRANSISTORS 10A 400v pnp

    Abstract: NPN Transistor 10A 400V to3 2N1489 2N1468 pnp 400v 10a 1526a 2NXXXX 2N6350 2N1400 2N6352
    Text: 62S4Ò22 S I L I üuin TRANSISTOR CORP u j . l 4 .\. v ii I n n m ü j. _88DQ0787 STOR CORP flfl D .T -A B -ß DE |fl2S40aa 000 Q7Ö7 S T • 2 .3 -1 / f NUMERICAL INDEX TO JAN QUALIFIED POWER TRANSISTORS 2NTYPE* JAN JAN TX JANTXV MIL-S19500 PAGETABLE 2N389


    OCR Scan     		PDF T-33-Ã flES40aa D0D07Ã 19S00 2N389 /173A 2N424 2N1016B /102A POWER TRANSISTORS 10A 400v pnp NPN Transistor 10A 400V to3 2N1489 2N1468 pnp 400v 10a 1526a 2NXXXX 2N6350 2N1400 2N6352

    42ap

    Abstract: TO3 HEATSINK
    Text: rZ Z S G S -T H O M S O N IM g ^ ( » iO T ( ô « S B U W 42/42P /42P F i B U W 42A /42A P /42A P F I HIGH VOLTAGE POWER SWITCH D E S C R IP T IO N The BUW42/A, BUW42P/42AP and BUW42PFI/ APFI are silicon multiepitaxial mesa PNP transistors mounted respectively in TO-3 metal case, TO-218


    OCR Scan     		PDF 42/42P BUW42/A, BUW42P/42AP BUW42PFI/ O-218 ISOWATT218 -00ms 42ap TO3 HEATSINK

    2NXXXX

    Abstract: NPN Transistor 10A 400V to3 transistor 2N 3440 TO-59 Package c 3420 transistor 2n3741 MIL transistor 2n 523 POWER TRANSISTORS 10A 400v pnp power transistors table TO111 package
    Text: 62S4Ò22 S I L I üuin TRANSISTOR CORP u j . l 4. \ . v i i I n n m ü j. _88DQ0787 STOR CORP flfl D .T -A B -ß DE |fl2S40aa 000 Q7Ö7 S T • 2 .3 -1 / f NUMERICAL INDEX TO JAN QUALIFIED POWER TRANSISTORS 2NTYPE* JAN JAN TX JANTXV MIL-S19500 PAGETABLE 2N389


    OCR Scan     		PDF 88DQ0787 fl2S40aa 2N389 2N424 2N1016B 2N1016C 2N1016D 2N1480 2N1481 2N1484 2NXXXX NPN Transistor 10A 400V to3 transistor 2N 3440 TO-59 Package c 3420 transistor 2n3741 MIL transistor 2n 523 POWER TRANSISTORS 10A 400v pnp power transistors table TO111 package

    IFRZ44

    Abstract: IRFZ43 KA3842D irf510 switch TRANSISTOR MC7805CT KA336Z Transistor mc7812ct high voltage pnp transistor 700v IRFZ44 PNP KS82C670N
    Text: PRODUCT INDEX ALPHA NUMERIC INDEX Part numbers In BOLD are preferred standard parts. PART NO. 2N3904 2N3906 2N4400 2N4401 2N4402 2N4403 2N5087 2NS088 2NS551 2N6S15 IRF510 IRF511 IRF512 IRF513 IRF520 IRF521 IRF522 IRF523 IRFS30 IRF531 IRF532 IRF533 IRF540 IRF541


    OCR Scan     		PDF 2N3904 2N3906 2N4400 2N4401 2N4402 2N4403 2N5087 2NS088 2NS551 2N6S15 IFRZ44 IRFZ43 KA3842D irf510 switch TRANSISTOR MC7805CT KA336Z Transistor mc7812ct high voltage pnp transistor 700v IRFZ44 PNP KS82C670N

    RCA transistor 40410

    Abstract: RCA transistor 40319 RCA transistor 40406 RCA 40872 rca 40636 rca 40634 rca 40872 transistor rca 2N3771 power circuit RCA 40595 transistor rca 40410
    Text: H IG H -V O LT A G E N-P-N & P-N-P POW ER T Y P E S 1C t o 3 0 A . . •c pm k - 12 A lc = 10A Py = 75 • 100W Switching Linear 130 x 130 130 x 1 3 0 1 3 0 x 130 BU 106 2N 5840 [N -P -N ] 2N 5240 [N -P -N ] BU 106 2N 5838 Va o sus =l40V VCER(sus) = 275 V


    OCR Scan     		PDF lc-30A 130x130 180x180 210x210 bu106 2n5840 2n5240 2N6510 2N6308 2n5805 RCA transistor 40410 RCA transistor 40319 RCA transistor 40406 RCA 40872 rca 40636 rca 40634 rca 40872 transistor rca 2N3771 power circuit RCA 40595 transistor rca 40410

    2N6179

    Abstract: POWER TRANSISTORS 10A 400v pnp BU106 2N3055 RCA 2N2102 BUX17 BUX18 RCA 2N3055 transistor transistor BDX 65 2N5240
    Text: HIGH-VOLTAGE N-P-N & P-N-P POWER T Y PE S 1C t o 3 0 A . . •c pm k - 12 A lc = 10A Py = 7 5 • 100W Switching Linear 130 x 130 130 x 1 3 0 1 3 0 x 130 BU 106 2N 5840 [N -P -N ] 2N 5240 [N -P -N ] BU 106 2N 5838 Va o sus =l40V VCER(sus) = 275 V hFE = 2 0 m in .


    OCR Scan     		PDF lc-30A 130x130 180x180 210x210 BU106 2N5840 2N5240 2N6510 2N6308 2N5805 2N6179 POWER TRANSISTORS 10A 400v pnp BU106 2N3055 RCA 2N2102 BUX17 BUX18 RCA 2N3055 transistor transistor BDX 65 2N5240

    rca 40410

    Abstract: rca 40362 transistor 40410 RCA transistor 40410 RCA transistor 40406 40410 RCA 40319 40362 RCA 2N5295 2N5296 RCA
    Text: HIGH-VOLTAGE N-P-N & P-N-P POWER T Y PE S 1C to 30 A . . •c pm k - 12 A lc = 10A Py =7 5 •100W Switching Linear 130 x 130 130 x 130 1 3 0 x 130 BU106 2N5840 [N-P-N] 2N 52 40 [N-P-N] BU106 2N5838 Va o sus =l40V VCER(sus) =275 V hFE = 20min. hFE.:8 ;" 0) /


    OCR Scan     		PDF lc-30A 130x130 180x180 210x210 bu106 2n5840 2n5240 2N6510 2N6308 2n5805 rca 40410 rca 40362 transistor 40410 RCA transistor 40410 RCA transistor 40406 40410 RCA 40319 40362 RCA 2N5295 2N5296 RCA

    transistor 13003 AD

    Abstract: ksd-180 HF 13003 KSD180 13003 HF KSD168 KSD966 ksd-168 PNP NPN Transistor VCEO 120V 100V Ic 7A KSC 1.5k 250v
    Text: TRANSISTORS FUNCTION GUIDE 1. SMALL SIGNAL TRANSISTORS 1.1 General Purpose Transistors 1.1.1 SOT-23 Type Transistors Device and Polarity Marking Condition V ceo lc Vce h FE Condition (c le Vce(sat},VBE(sat)(v) Condition fiÌMHz) (V) (A) (V) !c (mA) (mA)


    OCR Scan     		PDF OT-23 KST06 KST05 KSC1623 BCW71 BCX70G BCX70H BCX70J BCX70K BCX71G transistor 13003 AD ksd-180 HF 13003 KSD180 13003 HF KSD168 KSD966 ksd-168 PNP NPN Transistor VCEO 120V 100V Ic 7A KSC 1.5k 250v

    2N6476 JAN

    Abstract: 2N6180 40817 TA8662 2N5781 2N5954 2N6107 2N6248 TO220I 2N6372
    Text: EPITAXIAL-BASE N-P-N & P-N-P POWER TYPES 1C to 15 A . . . P f to 2 00 W . . . VCE to 125 V 1« “ - 3 .5 max. Py«10W m ax. ITO-3SI I{ > 8 A max. Py * 40 W max. T O -6 6 * lc * - 6 A max. Py - 40 W max. 1TO -66)* le « 7 A max. Py - 40 W max. VERSA W ATT


    OCR Scan     		PDF IT039I O-2201 lc-15 ITO-31 O-2201 90x90 2N6476 JAN 2N6180 40817 TA8662 2N5781 2N5954 2N6107 2N6248 TO220I 2N6372