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    POWER TRANSISTOR SOT32 Search Results

    POWER TRANSISTOR SOT32 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    POWER TRANSISTOR SOT32 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SMD CAPACITOR L29

    Abstract: Philips 2222-581 SMD CAPACITOR L27 BLV897 Philips capacitor 166 ferroxcube 4322
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV897 UHF push-pull power transistor Preliminary specification Supersedes data of 1997 Oct 03 1997 Nov 10 Philips Semiconductors Preliminary specification UHF push-pull power transistor BLV897 FEATURES PINNING - SOT324B


    Original     		PDF BLV897 OT324B SCA55 127067/00/02/pp12 SMD CAPACITOR L29 Philips 2222-581 SMD CAPACITOR L27 BLV897 Philips capacitor 166 ferroxcube 4322

    smd transistor 805 239

    Abstract: SMD transistor L17 smd L17 npn philips power transistor bd139 philips resistor 2322 smd transistor L6 5- pin smd IC 358 transistor bd139 STR 457 transistor BLV857
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV857 UHF linear push-pull power transistor Product specification Supersedes data of 1995 Oct 04 1997 Jan 16 Philips Semiconductors Product specification UHF linear push-pull power transistor FEATURES BLV857 PINNING SOT324B


    Original     		PDF BLV857 OT324B SCA53 127067/0/02/pp12 smd transistor 805 239 SMD transistor L17 smd L17 npn philips power transistor bd139 philips resistor 2322 smd transistor L6 5- pin smd IC 358 transistor bd139 STR 457 transistor BLV857

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT BFT92W PNP 4 GHz wideband transistor Product specification May 1994 NXP Semiconductors Product specification PNP 4 GHz wideband transistor BFT92W FEATURES DESCRIPTION • High power gain Silicon PNP transistor in a plastic, SOT323 S-mini package. The


    Original     		PDF BFT92W OT323 BFT92W BFT92. MBC870 OT323. R77/01/pp14

    BD234

    Abstract: PNP POWER TRANSISTOR SOT-32
    Text: BD234 SILICON PNP TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE PNP TRANSISTOR DESCRIPTION The BD234 is a silicon Epitaxial-Base PNP power transistor in Jedec SOT-32 plastic package inteded for use in medium power linear and switching applications.


    Original     		PDF BD234 BD234 OT-32 OT-32 PNP POWER TRANSISTOR SOT-32

    C 5074 transistor

    Abstract: 2N5195 2N5192 NPN POWER TRANSISTOR SOT-32 c 5074
    Text: 2N5195 Low voltage PNP power transistor Features • Low saturation voltage ■ PNP transistor Application ■ Audio, power linear and switching equipment Description 3 The device is manufactured in planar technology with “base island” layout. The resulting transistor


    Original     		PDF 2N5195 2N5192. OT-32 C 5074 transistor 2N5195 2N5192 NPN POWER TRANSISTOR SOT-32 c 5074

    BD234

    Abstract: No abstract text available
    Text: BD234 SILICON PNP TRANSISTOR • ■ SGS-THOMSON PREFERRED SALESTYPE PNP TRANSISTOR DESCRIPTION The BD234 is a silicon epitaxial-base PNP power transistor in Jedec SOT-32 plastic package inteded for use in medium power linear and switching applications. 3


    Original     		PDF BD234 BD234 OT-32 OT-32

    BD234

    Abstract: SGS-Thomson
    Text: BD234 SILICON PNP TRANSISTOR • ■ SGS-THOMSON PREFERRED SALESTYPE PNP TRANSISTOR DESCRIPTION The BD234 is a silicon epitaxial-base PNP power transistor in Jedec SOT-32 plastic package inteded for use in medium power linear and switching applications. 3


    Original     		PDF BD234 BD234 OT-32 OT-32 SGS-Thomson

    BD238

    Abstract: bd237 equivalent bd238 equivalent 0016114E BD237 Transistor B C 458
    Text: BD238 Low voltage PNP power transistor Features • Low saturation voltage ■ PNP transistor Applications ■ Audio, power linear and switching applications 3 1 SOT-32 TO-126 Description The device is manufactured in planar technology with “Base Island” layout. The resulting transistor


    Original     		PDF BD238 OT-32 O-126) BD237. BD238 bd237 equivalent bd238 equivalent 0016114E BD237 Transistor B C 458

    MJE270

    Abstract: MJE271
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company MJE270, MJE271 TO-126 SOT-32 Plastic Package MJE270 MJE271 NPN PLASTIC POWER TRANSISTOR PNP PLASTIC POWER TRANSISTOR Medium Power Darlingtons for Linear and Switching Applications


    Original     		PDF ISO/TS16949 MJE270, MJE271 O-126 OT-32) MJE270 C-120 MJE270 MJE271

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company MJE270, MJE271 TO-126 SOT-32 Plastic Package MJE270 MJE271 NPN PLASTIC POWER TRANSISTOR PNP PLASTIC POWER TRANSISTOR Medium Power Darlingtons for Linear and Switching Applications


    Original     		PDF MJE270, MJE271 O-126 OT-32) MJE270 C-120

    MAR 733

    Abstract: BD131 MAR 745 TRANSISTOR Q 817 BD132 BP317
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 BD131 NPN power transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Mar 04 Philips Semiconductors Product specification NPN power transistor


    Original     		PDF M3D100 BD131 O-126; BD132. MAM254 O-126. SCA53 117047/00/02/pp8 MAR 733 BD131 MAR 745 TRANSISTOR Q 817 BD132 BP317

    BD330

    Abstract: Q 817 BD329 BP317
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 BD330 PNP power transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 22 Philips Semiconductors Product specification PNP power transistor


    Original     		PDF M3D100 BD330 O-126; BD329. SCA54 117047/00/02/pp8 BD330 Q 817 BD329 BP317

    mje270 Transistor

    Abstract: MJE271 MJE270
    Text: Transys Electronics L I M I T E D MJE270, MJE271 TO-126 SOT-32 Plastic Package MJE270 MJE271 NPN PLASTIC POWER TRANSISTOR PNP PLASTIC POWER TRANSISTOR Medium Power Darlingtons for Linear and Switching Applications PIN CONFIGURATION 1. EMITTER 2. COLLECTOR


    Original     		PDF MJE270, MJE271 O-126 OT-32) MJE270 mje270 Transistor MJE271 MJE270

    MAR 745 TRANSISTOR

    Abstract: transistor BD329 BD329 BD330 BP317
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 BD329 NPN power transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Mar 07 Philips Semiconductors Product specification NPN power transistor


    Original     		PDF M3D100 BD329 O-126; BD330. MAM254 SCA53 117047/00/02/pp8 MAR 745 TRANSISTOR transistor BD329 BD329 BD330 BP317

    MJE271

    Abstract: "Power TRANSISTOR" MJE270
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company MJE270, MJE271 TO-126 SOT-32 Plastic Package MJE270 MJE271 NPN PLASTIC POWER TRANSISTOR PNP PLASTIC POWER TRANSISTOR Medium Power Darlingtons for Linear and Switching Applications


    Original     		PDF MJE270, MJE271 O-126 OT-32) MJE270 C-120 MJE271 "Power TRANSISTOR" MJE270

    BD179

    Abstract: 0016114E JESD97 ST BD179
    Text: BD179 NPN power transistor Features • NPN transistor Applications ■ General purpose switching Description 3 The device is manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance


    Original     		PDF BD179 OT-32 O-126) BD179 0016114E JESD97 ST BD179

    transistor bd442

    Abstract: 0016114E BD440 BD441 BD442 JESD97 PNP POWER TRANSISTOR SOT-32
    Text: BD442 PNP power transistor Features • PNP transistor Applications ■ Linear and switching industrial equipment Description This devices is manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain


    Original     		PDF BD442 BD441. OT-32 transistor bd442 0016114E BD440 BD441 BD442 JESD97 PNP POWER TRANSISTOR SOT-32

    marking code W1

    Abstract: BFT92 BFT92W TRANSISTOR 3358 NH35
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFT92W PNP 4 GHz wideband transistor Product specification May 1994 NXP Semiconductors Product specification PNP 4 GHz wideband transistor BFT92W FEATURES DESCRIPTION • High power gain Silicon PNP transistor in a plastic,


    Original     		PDF BFT92W OT323 BFT92W BFT92. MBC870 OT323. R77/01/pp14 marking code W1 BFT92 TRANSISTOR 3358 NH35

    BD439

    Abstract: st bd441 BD441 BD442 JESD97 BD441 an
    Text: BD441 NPN power transistor Features • NPN transistor Applications ■ Linear and switching industrial equipment Description This device is manufactured in planar technology with “base island” layout. The resulting transistor shows exceptional high gain performance


    Original     		PDF BD441 BD442. OT-32 BD439 st bd441 BD441 BD442 JESD97 BD441 an

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON iMiniSiRitaignigfafiRiOBinieg BD 234 SILICON PNP TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . PNP TRANSISTOR DESCRIPTION The BD234 is a silicon epitaxial-base PNP power transistor in Jedec SOT-32 plastic package inteded for use in medium power linear and


    OCR Scan     		PDF BD234 OT-32 BD234 OT-32 O-126)

    Untitled

    Abstract: No abstract text available
    Text: Æ T SGS-THOMSON * v / i» lim i ìiì» 0 © S _ BD234 SILICON PNP TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . PNP TRANSISTOR DESCRIPTION The BD234 is a silicon epitaxial-base PNP power transistor in Jedec SOT-32 plastic package inteded for use in medium power linear and


    OCR Scan     		PDF BD234 BD234 OT-32

    BD230

    Abstract: transistor K 2333
    Text: DISCRETE SEMICONDUCTORS BD230 NPN power transistor 1999 Apr 21 Product specification Supersedes data of 1997 Mar 06 Philips Semiconductors PHILIPS PHILIPS Philips Semiconductors Product specification NPN power transistor BD230 FEATURES PINNING • High current max. 1.5 A


    OCR Scan     		PDF BD230 BD230 BD231. SCA63 5002/00/03/pp8 transistor K 2333

    BFR93AW

    Abstract: MBG204 marking G SOT323 Transistor BFR93A
    Text: Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR93AW FEATURES DESCRIPTION • High power gain Silicon NPN transistor encapsulated in a plastic SOT323 S-mini package. The BFR93AW uses the same crystal as the SOT23 version, BFR93A.


    OCR Scan     		PDF BFR93AW OT323 BFR93AW BFR93A. 711002b 711062b MBG204 marking G SOT323 Transistor BFR93A

    marking 1GL

    Abstract: marking G SOT323 Transistor BFR92A BFR92AW
    Text: Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR92AW FEATURES DESCRIPTION • High power gain Silicon NPN transistor encapsulated in a plastic SOT323 S-mini package. The BFR92AW uses the same crystal as the SOT23 version, BFR92A.


    OCR Scan     		PDF BFR92AW OT323 BFR92AW BFR92A. MBC870 7110flSb marking 1GL marking G SOT323 Transistor BFR92A