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    POWER TRANSISTOR P55 Search Results

    POWER TRANSISTOR P55 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    POWER TRANSISTOR P55 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    55NF06

    Abstract: P55NF06 P55nf*06 Mosfet P55NF06
    Text: 55NF06 Pb Free Plating Product 55NF06 Pb N-CHANNEL POWER MOSFET TRANSISTOR 50 AMPERE 60 VOLT N-CHANNEL POWER MOSFET „ 12 DESCRIPTION Thinkisemi 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low


    Original     		PDF 55NF06 50N06 U55NF06 P55NF06 F55NF06 D55NF06 O-220/TO-220F 55NF06 P55NF06 P55nf*06 Mosfet P55NF06

    transistor c3909

    Abstract: pt 2358 Voltmeter Gan hemt transistor x band of38dBm transistor DB p16 CGH40025F ID4002 Cree Microwave Gan hemt transistor
    Text: APPLICATION NOTE Thermal Optimization of GaN HEMT Transistor Power Amplifiers Using New Self-heating Large-signal Model Introduction Gallium nitride power transistors have very high RF power densities which range from 4 to 12 watts per millimeter of gate periphery depending on operating drain voltage. Even though GaN/AlGaN on SiC


    Original     		PDF APPNOTE-006 transistor c3909 pt 2358 Voltmeter Gan hemt transistor x band of38dBm transistor DB p16 CGH40025F ID4002 Cree Microwave Gan hemt transistor

    transistor p98

    Abstract: P99 transistor transistor nc p79 p88 transistor Gan hemt transistor 100 p38 transistor transistor be p88 p115 WR35 1/SMD bm p57
    Text: APPLICATION NOTE Thermal Optimization of GaN HEMT Transistor Power Amplifiers Using New Self-heating Large-signal Model Introduction Gallium nitride power transistors have very high RF power densities which range from 4 to 12 watts per mm of gate periphery depending on operating drain voltage. Even though GaN/AlGaN on SiC


    Original     		PDF CGH40025F APPNOTE-006 transistor p98 P99 transistor transistor nc p79 p88 transistor Gan hemt transistor 100 p38 transistor transistor be p88 p115 WR35 1/SMD bm p57

    P5506

    Abstract: P5506NVG
    Text: P5506NVG N- & P-Channel Enhancement Mode Field Effect Transistor NIKO-SEM SOP-8 Lead-Free PRODUCT SUMMARY V BR DSS RDS(ON) ID N-Channel 60 55mΩ 4.5A P-Channel -55 80mΩ -3.5A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)


    Original     		PDF P5506NVG AUG-17-2004 P5506 P5506NVG

    P5506HVG

    Abstract: P5506 EQUIVALENT* P5506 10 35 SOP DIODE BR 8 TRANSISTOR
    Text: P5506HVG Dual N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM SOP-8 Lead-Free PRODUCT SUMMARY V BR DSS RDS(ON) ID 60 55mΩ 4.5A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS


    Original     		PDF P5506HVG AUG-19-2004 P5506HVG P5506 EQUIVALENT* P5506 10 35 SOP DIODE BR 8 TRANSISTOR

    LP559

    Abstract: No abstract text available
    Text: TO SHIBA TLP559 TOSHIBA PHOTOCOUPLER DIGITAL LOGIC GROUND ISOLATION GaA£As IRED & PHOTO IC T L P559 LINE RECEIVER MICROPROCESSOR SYSTEM INTERFACES SWITCHING POWER SUPPLY FEEDBACK CONTROL TRANSISTOR INVERTOR The TOSHIBA TLP559 consists of a GaA€As high-output light


    OCR Scan     		PDF TLP559 TLP559 2500Vrms LP559

    Untitled

    Abstract: No abstract text available
    Text: SOT223 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 3 - AUGUST 1995 FEATURES * * O_ Suitable for AF drivers and output stages High collector current and Low VCE|sat COMPLEMENTARY TYPE BCP52 PARTMARKING DETAILS - BCP55 BCP55 - 1 0 B C P55- 16


    OCR Scan     		PDF OT223 BCP52 BCP55 BCP55 500mA, BCP55-10 BCP55-16 150mA,

    Untitled

    Abstract: No abstract text available
    Text: 1DI300MN-050 300A • Outline Drawings , < r p - y POWER TRANSISTOR MODULE : Features • hFE^i^v,' High DC Current Gain • KF*gJSt •% m < n f f i m t • ffliis ■ A pplications • //U fl'f > ' < — 9 • General Purpose Inverter U ninterruptible Power Supply


    OCR Scan     		PDF 1DI300MN-050 I95t/R89

    EVM31-050A

    Abstract: ae9t b49 diode M203 P151 T151 JU 0003 EVM31-050 JT diode
    Text: EVM31-050A 150A : Outline Drawings POWER TRANSISTOR MODULE • i t s : Features ij —7^4 07 K ftj • h jF E ^fti.' •m m Including Free Wheeling Diode' High DC Current Gain Insulated Type : Applications >9 Power Switching • A C i- ^ W AC M otor Controls


    OCR Scan     		PDF EVM31-050A( E82988 E9TS5S35^ 19S24 l95t/R89 EVM31-050A ae9t b49 diode M203 P151 T151 JU 0003 EVM31-050 JT diode

    b175 transistor

    Abstract: FAF 45 DIODE
    Text: 6DI75M-050 75A ‘ Outline Drawings POWER TRANSISTOR MODULE • t t f t : Features • ffih FE High DC Current Gain • High Speed Switching : A p p lic a tio n s ? General Purpose Inverter • mwnwmw •N Uninterruptible Power Supply X - f Servo & Spindle Drive for NC Machine Tools


    OCR Scan     		PDF 6DI75M-050 I95t/R89) b175 transistor FAF 45 DIODE

    50BO

    Abstract: sje transistor
    Text: 1DI5OMA-O5O 50a / < 7 \= 7 - POWER TRANSISTOR MODULE : Features • hF E *'' '-' High DC Current Gain • 7.4 y 7 KA^iSv.' • JfiiSifli Insulated Type High speed sw itching • E l i Ê : A p p lic a tio n s Power Sw itching • ?;/u— Mot or Brake in Inverter


    OCR Scan     		PDF i17TL I95t/R89) 50BO sje transistor

    CM IWN DC

    Abstract: S3050 transistor kda 2DI150M-050
    Text: 2 D I 150M-050 15 oa IW K ’+ jä : Outline Drawings POWER TRANSISTOR MODULE • 4 * A : Features • S h FE High DC Current Gain • High Speed Switching : A pplications • i G e n e r a l • £ • N C lfE ffifctt • ntfiyh Purpose Inverter Uninterruptible Power Supply


    OCR Scan     		PDF 150M-050 E82988 I95t/R89 Shl50 CM IWN DC S3050 transistor kda 2DI150M-050

    photo transistor til 78

    Abstract: ECG3040 ECG3045 ecg 3041 ECG3041 ECG3047 3094 transistor ECG3090 ECG3086 ECG3098
    Text: Optoisolators DC Current Transfer Ratio Isolation Voltage Viso Surge V Total Power Pt (mW) 7500 7500 250 250 20 100 ECG3045 NPN Darlington NPN Darlington 7500 3550 7500 7500 250 260 300 300 ECG3081 NPN Transistor 6000 ECG3082 NPN Darlington 6000 ECG3083


    OCR Scan     		PDF ECG3040 ECG3041 ECG3042 ECG3043 ECG3044 ECG3045 photo transistor til 78 ecg 3041 ECG3047 3094 transistor ECG3090 ECG3086 ECG3098

    6DI30B-050

    Abstract: IC M605 M605 TRANSISTOR MS 173 TE TRANSISTOR 3F t T151 T760 T810 3M1G B149
    Text: 6DI3OB-O5CK30A — )v POWER TRANSISTOR MODULE Features •7 1 ) —?fc*i ') >? ?*'{ $•—K l*lSi Including Free Wheeling Diode • hFE^'ra^' High DC Current Gain • Insulated Type Applications • AC -t — 9 —iUiiP AC M otor Controls • 1 7 3 > Air Conditioners


    OCR Scan     		PDF E82988 I95t/R89) 6DI30B-050 IC M605 M605 TRANSISTOR MS 173 TE TRANSISTOR 3F t T151 T760 T810 3M1G B149

    TFM 1380 T

    Abstract: No abstract text available
    Text: 1D I 3 O O M - O 5 O 300a Ä ± / < 7— ✓\ ° 7 - ' Outline Drawings POWER TRANSISTOR MODULE • Features • hFE*v'' \.v High DC Current Gain • High speed switching Including Free Wheeling Diode .Insulated Type • A p p licatio n s • ’X M .t) 7*4 "/•?■>?


    OCR Scan     		PDF E82988 1995-9Cl95t/R89) TFM 1380 T

    aeir

    Abstract: 1DI75H-120 M206 pohi 111-BA OA75 1DI75H-120C75A DF RV transistor
    Text: 1DI75H-120 75a : Outline Draw ings POWER TRANSISTOR MODULE : F e a tu re s • ¡Ü IÎŒ High Voltage Including Free Wheeling Diode • A SO A '“j2 ;i' Excellent Safe Operating Area Insulated Type IffiiÉ • A p p lic a tio n s • Chopper Controls • D C t-* # ]«


    OCR Scan     		PDF 1DI75H-120 aeir M206 pohi 111-BA OA75 1DI75H-120C75A DF RV transistor

    TRANSISTOR N 1380 600 300 SC

    Abstract: M109 S30S3 T151 S-30S transistor 009
    Text: 1 D I 3 O O M - O 5 O 300a • Outline Drawings POWER TRANSISTOR MODULE • t t * '• F e a tu re s • High DC Current Gain ti — Hi gh speed switching Including Free Wheeling Diode .Insulated Type ■ E 3i£ : A p p lic a tio n s • js M h 'T i'i "/?■>?


    OCR Scan     		PDF S30S3% I95t/R89) Shl50 TRANSISTOR N 1380 600 300 SC M109 S30S3 T151 S-30S transistor 009

    transistor w4

    Abstract: KL9A 2DI50M-120 csr rf
    Text: 2DI50M -120 50A / ' 7 — IW & ’+ jä I Outline Drawings h 7 POWER TRANSISTOR MODULE Features • • L' High Arm Short Circuit Capability • hFE*''Sv.' High DC Current Gain • ~7X ) x) 's W A K F*93R Including Freewheeling Diode • i f e t I n s u l a t e d Type


    OCR Scan     		PDF 2DI50M-120 E82988 OOOOOC30000 transistor w4 KL9A csr rf

    transistor 009

    Abstract: diode B61 transistor bf 760 S535 M109 T810 T930
    Text: 1 D I 3 O O M - O 5 O 300a Ä ± / < 7— ✓\ ° 7 - ' Outline Drawings POWER TRANSISTOR MODULE • F e a tu re s • hFE*v'' \.v High DC Current Gain • High speed switching Including Free Wheeling Diode .Insulated Type • A p p lic a t io n s • ’X M .t) 7*4 "/•?■>?


    OCR Scan     		PDF 11S19 l95t/R89 transistor 009 diode B61 transistor bf 760 S535 M109 T810 T930

    AFAA TRANSISTOR

    Abstract: sew motor 41G1 LB-20G HM 1211 B371
    Text: 2DI3OZ-12O 30a POWER TRANSISTOR MODULE • 4 * * : F e atu res • ¡ftffii/E Hi gh Vol t age • 7 l) ij V • A S O jW S v,' • t ë fâ M * - KrtîK I ncl udi ng Free W h e e lin g D iode E xcelle nt Safe O p e ra tin g Area Insulated Type : Applications


    OCR Scan     		PDF 2DI3OZ-12O 53QkQ E82988 l95t/R89 AFAA TRANSISTOR sew motor 41G1 LB-20G HM 1211 B371

    IC M605

    Abstract: B409 6DI15A-120 M605 T151 B-411
    Text: 6DI15A-12005A Outline Drawings POWER TRANSISTOR MODULE : Features te . • l'fe-" I: te '••' • 7 1; - * 4 «; H igh V oltage • - K rt* In c lu d in g Free W h e e lin g D iode Insulated Type ■ f f l iÊ • A p p lic a tio n s • AC^ — A C M o to r Controls


    OCR Scan     		PDF 6DI15A-120 E82988 30it3^ I95t/R89 IC M605 B409 M605 T151 B-411

    transistor f151

    Abstract: No abstract text available
    Text: 6DI15A-05005A / < T7 — ' Ì k ± s \ r7 — ;E ' > i L — J l' : Outline Drawings =l — ) V POWER TRANSISTOR MODULE 17 7.6 T 7 7I 7I7 JA B 3.E A 3.E |3& [3.Ç • iN N i: : F e a tu re s • y U — i ï ' f 'J + — K rtJ E In c lu d in g Free W h e e lin g D iode


    OCR Scan     		PDF 6DI15A-05005A) E82988 l95t/R89 Shl50 transistor f151

    b310 diode

    Abstract: DU9 308 1DI75F-120
    Text: 1DI75F-120 75a /< 7 H : Outline D raw ings .- ;u POWER TRANSISTOR MODULE •W Ji • Features ' fiÜSÎŒ H ig h V o lta g e 17 ' J — KF*3i 'A S O ^ '/ a ^ In clu d in g Free W h e e lin g D iode Ex cellent S a fe O p eratin g A rea Insulated Type ■ Æ jiÉ • A p p lic a t io n s


    OCR Scan     		PDF 1DI75F-120 b310 diode DU9 308

    phd55n03

    Abstract: transistor smd xc PHB55N03LT PHD55N03LT SMD footprint design PHP55N03LT SC18 T0220AB TRANSISTOR LD25
    Text: Product specification Philips Sem iconductors N-channel TrenchM O S transisto r Logic level FET SYM BOL FEATURES • • • • • PH P55N 03LT, P H B 55N 03LT P H D 55N 03LT QUICK REFERENCE DATA V DSS = 25 V d ’Trench’ technology Very low on-state resistance


    OCR Scan     		PDF PHP55N03LT, PHB55N03LT PHD55N03LT 14mil PHP55N03LT T0220AB) phd55n03 transistor smd xc PHD55N03LT SMD footprint design SC18 T0220AB TRANSISTOR LD25