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    POWER TRANSISTOR CROSS SECTION Search Results

    POWER TRANSISTOR CROSS SECTION Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    POWER TRANSISTOR CROSS SECTION Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    brushless dc motor diagram

    Abstract: brushless dc motor "silicon on insulator" "Brushless DC Motor"
    Text: High-Voltage SOI Power ICs Outline • Newly designed monolithic IC integrating a control IC with high-power MOSFETs and IGBTs on a single chip ● Chip Control Section Power Section ● Cross section Silicon On Insulator process NPN Transistor E N N PNP


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    varistor 472 SUS

    Abstract: rpf22n10 Fairchild UL file MOS transistor UHC MOS AN75 AN-7514 C150 IAS150 RFP22N10 uis test
    Text: Single Pulse Unclamped Inductive Switching: A Rating System Application Note Failure Mechanisms Early Power MOSFET devices, not designed to be rugged, failed when the parasitic bipolar transistor indigenous to the vertical DMOS process turned on. Figure 1 shows a cross


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    PDF AN-7514 varistor 472 SUS rpf22n10 Fairchild UL file MOS transistor UHC MOS AN75 AN-7514 C150 IAS150 RFP22N10 uis test

    E5 SMD Transistor

    Abstract: 4410 smd 4410 ic 4410 8 pins pbm1 TRANSISTOR T4 transistor smd e5 lg smd transistor IXBD4410 IXBD4411
    Text: GDBD 4410 Driver Unit for Converter-Brake-Inverter Modules Preliminary data Application and Features The driver board constitutes a high performance interface between drive controller and power section of a variable speed AC drive, consisting of six plus one transistors for a three phase


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    PDF IXBD4410/11 E5 SMD Transistor 4410 smd 4410 ic 4410 8 pins pbm1 TRANSISTOR T4 transistor smd e5 lg smd transistor IXBD4410 IXBD4411

    TE16L

    Abstract: 2SJ239(TE16L)
    Text: New Power Mold Package Embossed TE16L Tape for the New PW-Mold Package Tape Dimensions Unit: mm 2.0 ±0.1 0.3 4.0 ±0.1 8.0 ±0.1 +0.1 –0.0 1.75 φ1.5 Y X 10.1 +0.1 –0.0 16.0 φ3.0 7.5 ±0.1 Y X’ Y’ Y’ 2.7 Feed direction 6.8 X X’ Cross section X-X’


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    PDF TE16L TE16L 2SJ239(TE16L)

    TE16L

    Abstract: No abstract text available
    Text: Deca Power Device Package Lead Bend Embossed TE16L Tape for the DP (LB) Package Tape Dimensions Unit: mm 2.0 ±0.1 0.3 4.0 ±0.1 8.0 ±0.1 +0.1 –0.0 1.75 φ1.5 Y X 10.1 φ3.0 ±0.05 16.0 7.5 ±0.1 Y X’ Y’ Y’ 2.7 Feed direction 6.8 X X’ Cross section X-X’


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    Omron

    Abstract: OMRON E5CX temperature controller omron e5cx user manual thyristor control arc welding rectifier circuit omron e5cx manual omron e5cx TRIAC PHASE ANGLE CONTROLLER E5Cx thyristor drive dc motor speed control ac motor speed control circuit with triac
    Text: Cat. No. Y108-E1-1 Solid State Relay User's Guide Introduction SSR stands for Solid State Relay. First marketed in the 1970’s, SSRs have recently become very popular for the following reasons. • As a means of creating no-contact relays in output power sections


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    PDF Y108-E1-1 mee49 Omron OMRON E5CX temperature controller omron e5cx user manual thyristor control arc welding rectifier circuit omron e5cx manual omron e5cx TRIAC PHASE ANGLE CONTROLLER E5Cx thyristor drive dc motor speed control ac motor speed control circuit with triac

    agilent pHEMT transistor

    Abstract: agilent ads AGC Amplifiers digital phase shifters analog phase shifters chip High Power Microwave Device phemt microwave office GaAs wafer
    Text: 0.25-µm MMW pHEMT 2MI Process Data Sheet Air bridge Cap top-plate Plating, 4.6 µm Nitride for capacitor Nitride First metal, 0.75 µm Active region GaAs resistor Semi-insulating GaAs substrate Via under cap 0.25-µm 2MI Cross Section • • • • •


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    PDF 100-mm agilent pHEMT transistor agilent ads AGC Amplifiers digital phase shifters analog phase shifters chip High Power Microwave Device phemt microwave office GaAs wafer

    74als power consumption

    Abstract: 74AS TTL SERIES 74AS 74AS Characteristics AN-476 Complete for 74LS family 74AS SERIES pnp transistor 1000v 74AS fan-out 74ls series logic family
    Text: Fairchild Semiconductor Application Note 476 March 1995 INTRODUCTION Since the introduction of the first bipolar Transistor-Transistor Logic TTL family (DM54/74), system designers have wanted more speed, less power consumption, or a combination of the two attributes. These requirements have spawned other logic families such as the DM54/


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    PDF DM54/74) DM54/ DM54/74LS 74als power consumption 74AS TTL SERIES 74AS 74AS Characteristics AN-476 Complete for 74LS family 74AS SERIES pnp transistor 1000v 74AS fan-out 74ls series logic family

    ALS74

    Abstract: AN-476 DM74 AN476 pnp transistor 1000v SCHOTTKY DIODES CROSS REFERENCE
    Text: Fairchild Semiconductor Application Note October 1986 Revised March 2003 Guide to ALS and AS Introduction Since the introduction of the first bipolar Transistor-Transistor Logic TTL family (DM74), system designers have wanted more speed, less power consumption, or a combination of the two attributes. These requirements have


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    PDF DM74L DM74LS DM74S AN-476 ALS74 DM74 AN476 pnp transistor 1000v SCHOTTKY DIODES CROSS REFERENCE

    Triac cross reference T2500D

    Abstract: scr characteristics 2N6344A TRIAC MCR68-2
    Text: Table of Contents Chapter 1: Theory and Applications Sections 1 thru 9 Page Section 6: Applications (continued) AND8006 — Electronic Starter for Flourescent Lamps . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 184 AND8007 — Momentary Solid State Switch


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    PDF 225AA Triac cross reference T2500D scr characteristics 2N6344A TRIAC MCR68-2

    500 UPS diagrams

    Abstract: phoenix quint ups phoenix contact QUINT 40 UPS diagrams VRLA transistor 24 2320306 2320351
    Text: Extract from the online catalog QUINT-UPS/ 1AC/1AC/500VA Order No.: 2320270 Uninterruptible power supply with IQ technology 1AC/1AC/500 VA. For 120 V AC/230 V AC applications. Provides information


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    PDF 1AC/1AC/500VA 1AC/1AC/500 AC/230 IF-2011) UPS-BAT/VRLA/24DC/12AH UPS-BAT/VRLA/24DC/38AH 1AC/1AC/500VA 500 UPS diagrams phoenix quint ups phoenix contact QUINT 40 UPS diagrams VRLA transistor 24 2320306 2320351

    74als power consumption

    Abstract: 74AS Characteristics Introduction about 74ls 74AS ALS TTL family characteristics 74LS ALS74 AN-476 C1995 DM54
    Text: INTRODUCTION Since the introduction of the first bipolar Transistor-Transistor Logic TTL family (DM54 74) system designers have wanted more speed less power consumption or a combination of the two attributes These requirements have spawned other logic families such as the DM54 74L (low


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    light on relay

    Abstract: E3C-DS10 E3C-S10 E3C-S20W E3C-S30T E3C-S30W E3C-S50 E3C-S30DT OMRON PHOTOELECTRIC SWITCH AMPLIFIER
    Text: Compact Head Amplifier-separated Photoelectric Sensor E3C CSM_E3C_DS_E_3_1 Thin, Compact Head Saves Space and Mounts Closely. Built-in Interference Protection Provided. • Input indicator on the Sensor Unit simplifies settings. Be sure to read Safety Precautions on


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    PDF E3C-S50 E3C-S10 E3C-S20W light on relay E3C-DS10 E3C-S30T E3C-S30W E3C-S30DT OMRON PHOTOELECTRIC SWITCH AMPLIFIER

    Galvanic

    Abstract: Isolation Amplifiers "Isolation Amplifiers" Namur isolating switching amplifier
    Text: Extract from the online catalog UM122-FLK16/EX-MB/8 Order No.: 2968467 Ex-module carrier, intrinsically safe, for accommodating 8 Process Interface modules PI-Ex. . Commercial data


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    PDF UM122-FLK16/EX-MB/8 IF-2009) UM122-FLK16/EX-MB/8 Galvanic Isolation Amplifiers "Isolation Amplifiers" Namur isolating switching amplifier

    E3C-S30LW

    Abstract: E3C-S30DT E3C-DS5W E3c-vs7r E3C-VM35R E3C-VS1G photo-electric switch RELAY OMRON E3C-JC4P OMRON PHOTOELECTRIC SWITCH AMPLIFIER E3C-S30DW
    Text: Compact Head Amplifier-separated Photoelectric Sensor E3C CSM_E3C_DS_E_5_1 Thin, Compact Head Saves Space and Mounts Closely. Built-in Interference Protection Provided. • Input indicator on the Sensor Unit simplifies settings. Be sure to read Safety Precautions on


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    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


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    PDF AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492

    motorola transistor cross reference

    Abstract: transistor cross reference Cross Reference power transistor cross transistor
    Text: The following power transistor data sheets are arranged in alphanum eric sequence, some data sheets may contain information applying to more than one transistor— e.g.2N4398, 2N4399, 2N5745. To determine if a particular device type is covered by a data sheet in this section, either refer to the alphanu­


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    PDF 2N4398, 2N4399, 2N5745. motorola transistor cross reference transistor cross reference Cross Reference power transistor cross transistor

    Untitled

    Abstract: No abstract text available
    Text: MOSEL VITELIC INC. Preliminary August 1998 MSS0617 Variable pitch variable loudness 6 ” Voice ROM Features • Single power supply can operate at 2.4 V through 6.0 V. ■ Current output can drive 8 ohm speaker with a transistor. ■ The voice content can be separated to 32 sections.


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    PDF MSS0617 20000h)

    MSS0617

    Abstract: No abstract text available
    Text: MOSEL VITELIC INC. MSS0617 Preliminary August 1998 Variable pitch variable loudness 6 ” Voice ROM Features • Single power supply can operate at 2.4 V through 6.0 V. ■ Current output can drive 8 ohm speaker with a transistor. ■ The voice content can be separated to 32 sections.


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    PDF MSS0617 20000h) 9000hx MSS0617

    transistors DEVICE MARKING

    Abstract: ROHM transistors R1P SOT-223
    Text: Introduction Abbreviated symbol markings for mini-mold products Because of the size of the mini-mold transistors offered in this catalog, it is not possible to provide a readable marking with the full part number and hFE ranking. Instead, these transistors are marked as described in the following sections.


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    RF power transistors cross reference

    Abstract: transistors cross reference list HF RF Power Transistors cross reference rf transistors cross reference
    Text: Philips Semiconductors RF Wideband Transistors Generai section QUALITY • Acceptance tests on finished products to verify conformance with the device specification. The test results are used for quality feedback and corrective actions. The inspection and test requirements are


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    PDF MEA471 OT323 OT143 OT143R OT143, OT143R OT223 RF power transistors cross reference transistors cross reference list HF RF Power Transistors cross reference rf transistors cross reference

    ST2S05

    Abstract: st2506
    Text: SLOTTED OPTSCAL SWITCH QPTDELECiROHiCi CNY36 £ h D1 02 *J L l O r D | \ 0 b| bt SECTION X - X LEAD PROFILE T SYMBOL MILLIMETERS MIN. MAS*. A 107 11.0 A. 3,0 3.2 b ' .800 .750 b, .50 MOM 0, 11.5 12.3 3.0 D, 3.3 7.S 6.9 * 2.3 2.8 . * E? 6.15 636 L B.00


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    PDF CNY36 27nim ST2S05 ST2506 ST2S05 st2506

    TRANSISTOR BI 243

    Abstract: tr/TRANSISTOR BI 243
    Text: E Q SLOTTED OPTICAL SWITCH OP TO E L E CT R ON I CS H21A4/5/6 PACKAGE DIMENSIONS SYMBOL -D1 - ©T — lX 3 | g b! SECTION X - xT~ LEAD PROFILE S T 1339-01 MILLIMETERS M!N. MAX. INCHES MIN. A 10.7 11.0 .422 .433 A, 3.0 3.2 .119 .125 3.0 3.2 .119


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    PDF H21A4/5/6 ST1144-11 ST1141-11 ST1145-11 ST1142-11 ST1143-11 TRANSISTOR BI 243 tr/TRANSISTOR BI 243

    ST-132

    Abstract: st137
    Text: SLOTTED OPTICAL SWITCH IPflElEtTRfiliCS CNY28 p SVMSOL MILLIMETERS MIN. WUr A 10.7 11.0 A, 3.0 32 fin 3-0 3Z -r tL ©1 4 0 _ *> i SECTIONX-X T~ LEAD PROFILE J i *b b, D R -g 4 r -4 ,.i„ *2 T ?! I E L A #p Q SEATING PLANE S S, T A ir j 7 x X .750 600 .60 MOM.


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    PDF CNY28 5T1339 ST-132 st137