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    POWER TRANSISTOR 2N3055 Search Results

    POWER TRANSISTOR 2N3055 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    POWER TRANSISTOR 2N3055 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2N3055H

    Abstract: 2N3055H+RCA
    Text: Silicon Power Transistor 2N3055H Technical Data Typical Applications : These devices are designed for general purpose switching and amplifier applications. Specification Fetaures : F Complementary NPN Silicon Power Transistor F 15 Amp / 100 V device in TO-204AA [ TO-3 ] package


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    2N3055H O-204AA 2N3055H 2N3055H+RCA PDF

    power transistor 2n3055

    Abstract: transistor 2N3055 2n3055 circuit 2N3055 TO-3 2N3055
    Text: Silicon Power Transistor 2N3055 Technical Data Typical Applications : These devices are designed for general purpose switching and amplifier applications. Specification Fetaures : F F F F Complementary NPN Silicon Power Transistor 15 Amp / 60 V device in TO-204AA [ TO-3 ] package


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    2N3055 O-204AA power transistor 2n3055 transistor 2N3055 2n3055 circuit 2N3055 TO-3 2N3055 PDF

    2n3055 transistor

    Abstract: 2N3055 power transistor 2n3055 2n3055 malaysia transistor 1547 b data transistor 2n3055 2N3055 NPN Transistor 2N3055 TO-3 2n3055 circuit diagram 2N3055 power amplifier circuit
    Text: 2N3055 SILICON NPN TRANSISTOR • ■ SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION The 2N3055 is a silicon epitaxial-base NPN transistor in Jedec TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity


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    2N3055 2N3055 2n3055 transistor power transistor 2n3055 2n3055 malaysia transistor 1547 b data transistor 2n3055 2N3055 NPN Transistor 2N3055 TO-3 2n3055 circuit diagram 2N3055 power amplifier circuit PDF

    BU108

    Abstract: 2SC1629 equivalent BDX54 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX41 SWITCHMODE Series NPN Silicon Power Transistor 15 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 120 WATTS . . . designed for high speed, high current, high power applications. • Very fast switching times:


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    BUX41 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 BU108 2SC1629 equivalent BDX54 BU326 BU100 PDF

    2n3055 malaysia

    Abstract: 2N3055 BUY69A 2N3055 schematic diagram internal schematic diagram for 2n3055
    Text: 2N3055 SILICON NPN TRANSISTOR • ■ SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION The 2N3055 is a silicon epitaxial-base NPN transistor in Jedec TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity


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    2N3055 2N3055 2n3055 malaysia BUY69A 2N3055 schematic diagram internal schematic diagram for 2n3055 PDF

    BU108

    Abstract: BC337 circuit example BC337 rbe BDX54 replacement transistor BC337 BU326 BU100 MOTOROLA 2N3773
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU522B High Voltage Silicon Power Darlingtons 7 AMPERES DARLINGTON POWER TRANSISTORS NPN SILICON 450 VOLTS 75 WATTS Power Transistor mainly intended for use as ignition circuit output transistor. • Specified minimum sustaining voltage:


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    BU522B TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 BU108 BC337 circuit example BC337 rbe BDX54 replacement transistor BC337 BU326 BU100 MOTOROLA 2N3773 PDF

    BU208A equivalent

    Abstract: BD237 similar IC 3843 8 Pin BU108 BU208 2N4347 BD-31 2n3055 motorola bdx54c equivalent MJ13330
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ13333  Data Sheet Designer's SWITCHMODE Series NPN Silicon Power Transistor 20 AMPERE NPN SILICON POWER TRANSISTORS 400–500 VOLTS 175 WATTS The MJ13333 transistor is designed for high voltage, high–speed, power switching


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    MJ13333 MJ13333 AMP32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B BU208A equivalent BD237 similar IC 3843 8 Pin BU108 BU208 2N4347 BD-31 2n3055 motorola bdx54c equivalent MJ13330 PDF

    BU108

    Abstract: BDT3 2SC1943 2SC1419 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE8503A* Advance Information SWITCHMODE Series *Motorola Preferred Device NPN Bipolar Power Transistor POWER TRANSISTORS 5.0 AMPERES 1500 VOLTS — BVCES 80 WATTS The MJE8503A transistor is designed for high voltage, high speed, power switching


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    MJE8503A* MJE8503A WATT32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B BU108 BDT3 2SC1943 2SC1419 BU326 BU100 PDF

    MJE15020

    Abstract: DTS423 mje15033 replacement 2SC243 BD388-5 2SC1826 BD263 2SC1903 SE9302 2SA698
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE340 Plastic Medium Power NPN Silicon Transistor 0.5 AMPERE POWER TRANSISTOR NPN SILICON 300 VOLTS 20 WATTS . . . useful for high–voltage general purpose applications. • Suitable for Transformerless, Line–Operated Equipment


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    MJE340 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 MJE15020 DTS423 mje15033 replacement 2SC243 BD388-5 2SC1826 BD263 2SC1903 SE9302 2SA698 PDF

    BUS48AP

    Abstract: 2SC1381 mje15033 replacement 2SA698 BD477 BD139.16 2N307 2SC1224 2SD549 BD139.10
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD166 Plastic Medium Power Silicon PNP Transistor 1.5 AMPERE POWER TRANSISTOR PNP SILICON 45 VOLTS 20 WATTS . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.


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    BD166 BD165 BD166 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B BUS48AP 2SC1381 mje15033 replacement 2SA698 BD477 BD139.16 2N307 2SC1224 2SD549 BD139.10 PDF

    BU108

    Abstract: transistor Bc 574 2n6107 MOTOROLA 2SC1943 MJ3055 to220 2SC1419 BU326 BU100 MJ*15033 2N6277
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV21 SWITCHMODE Series NPN Silicon Power Transistor 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 250 WATTS . . . designed for high speed, high current, high power applications. • High DC current gain: hFE min. = 20 at IC = 12 A


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    BUV21 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 BU108 transistor Bc 574 2n6107 MOTOROLA 2SC1943 MJ3055 to220 2SC1419 BU326 BU100 MJ*15033 2N6277 PDF

    TIP34C equivalent

    Abstract: BU108 TRANSISTOR BC 384 5D2 6 BUV11 equivalent BDX54 2N3025 equivalent BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV11 SWITCHMODE Series NPN Silicon Power Transistor 20 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 150 WATTS . . . designed for high current, high speed, high power applications. • High DC current gain; hFE min. = 20 at IC = 6 A


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    BUV11 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 TIP34C equivalent BU108 TRANSISTOR BC 384 5D2 6 BUV11 equivalent BDX54 2N3025 equivalent BU326 BU100 PDF

    2N4922

    Abstract: BU108 2SB655 BD390 MJ11021 2sb557 BDX54 2n6107 MOTOROLA 2SC1943 MJE2482
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV23 SWITCHMODE Series NPN Silicon Power Transistor 30 AMPERES NPN SILICON POWER METAL TRANSISTOR 325 VOLTS 250 WATTS . . . designed for high current, high speed, high power applications. • High DC current gain: HFE min. = 15 at IC = 8 A


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    BUV23 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 2N4922 BU108 2SB655 BD390 MJ11021 2sb557 BDX54 2n6107 MOTOROLA 2SC1943 MJE2482 PDF

    BU108

    Abstract: 2SC194 transistor Bc 574 2SC1419 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV20 SWITCHMODE Series NPN Silicon Power Transistor 50 AMPERES NPN SILICON POWER METAL TRANSISTOR 125 VOLTS 250 WATTS . . . designed for high speed, high current, high power applications. • High DC current gain: hFE min = 20 at IC = 25 A


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    BUV20 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 BU108 2SC194 transistor Bc 574 2SC1419 BU326 BU100 PDF

    BU108

    Abstract: ir411 transistor BC 247 2N592 MJE2482 2SD675 2SC1419 BU326 BU100 BUV22 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV22 SWITCHMODE Series NPN Silicon Power Transistor 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 250 VOLTS 250 WATTS . . . designed for high current, high speed, high power applications. • High DC current gain: HFE min. = 20 at IC = 10 A


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    BUV22 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 BU108 ir411 transistor BC 247 2N592 MJE2482 2SD675 2SC1419 BU326 BU100 BUV22 equivalent PDF

    MJ2955 replacement

    Abstract: diode T 3512 H BD581 free transistor equivalent book 2sc789 BU108 motorola diode cross reference MJE-3439 tip122 pin configuration 2SA756 BU104P
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUT33  Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode Designer's 56 AMPERES NPN SILICON POWER DARLINGTON TRANSISTOR 600 VOLTS 250 WATTS The BUT33 Darlington transistor is designed for high–voltage, high–speed, power


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    BUT33 BUT33 204AE TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B MJ2955 replacement diode T 3512 H BD581 free transistor equivalent book 2sc789 BU108 motorola diode cross reference MJE-3439 tip122 pin configuration 2SA756 BU104P PDF

    transistor bd4202

    Abstract: motorola AN485 transistor tip120 motorola MJ480 MJE802 MOTOROLA TRANSISTOR REPLACEMENT GUIDE 2SC495 transistor MJE1100 MOTOROLA BUX98A MJE170 motorola
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUL45 * BUL45F*  Data Sheet Designer's NPN Silicon Power Transistor High Voltage SWITCHMODE t Series *Motorola Preferred Device POWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTS Designed for use in electronic ballast light ballast and in Switchmode Power


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    BUL45 BUL45F* BUL45F, E69369 RATING32 TIP73B TIP74 TIP74A TIP74B TIP75 transistor bd4202 motorola AN485 transistor tip120 motorola MJ480 MJE802 MOTOROLA TRANSISTOR REPLACEMENT GUIDE 2SC495 transistor MJE1100 MOTOROLA BUX98A MJE170 motorola PDF

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


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    AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492 PDF

    2n3055 malaysia

    Abstract: 2N3055 NPN Transistor 2N3055 transistor power transistor 2n3055 2N3055 t 2N3055 value of 2n3055 ST 2N3055 data transistor 2n3055 2N3055 ST
    Text: 2N3055 SILICON NPN TRANSISTOR . STM PREFERRED SALESTYPE . NPN TRANSISTOR DESCRIPTION The 2N3055 is a silicon epitaxial-base NPN transistor in Jedec TO-3 metal case. It is intended tor power switching circuits, series and shunt regulators, output stages and high fidelity


    OCR Scan
    2N3055 2N3055 2n3055 malaysia 2N3055 NPN Transistor 2N3055 transistor power transistor 2n3055 t 2N3055 value of 2n3055 ST 2N3055 data transistor 2n3055 2N3055 ST PDF

    2N6569

    Abstract: st 2n3055 2N3055 2N6594
    Text: ¿2&M0SPEC NPN SILICON POWER TRANSISTOR The 2N6569 is a general-purpose, EPIBAS power transistor designed for low voltage amplifier power switching applica­ tions. FEATURES: * Safe Operating Area- Full Power Rating to 40V * EPIBASE Performance in Gain and Speed


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    2N6569 2N6594 2N3055 st 2n3055 2N6594 PDF

    2n3055 sgs

    Abstract: 2n3055 sgs 2n3055 2N3055 schematic diagram 2N3055 NPN Transistor TRANSISTOR L 287 A 2n3055 npn power transistor data transistor 2n3055 2N3055 silicon power transistor 2n3055
    Text: SCS-THOMSON dD œilLIiêîi iQ©i 2N3055 SILICON NPN TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . NPN TRANSISTOR DESCRIPTION The 2N3055 is a silicon epitaxial-base NPN transistor in Jedec TO-3 metal case. It is intended for power switching circuits, series and shunt


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    2N3055 2N3055 2n3055 sgs sgs 2n3055 2N3055 schematic diagram 2N3055 NPN Transistor TRANSISTOR L 287 A 2n3055 npn power transistor data transistor 2n3055 2N3055 silicon power transistor 2n3055 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N3055SPL MJ2955SPL 2N3055SPL MJ2955SPL NPN POWER TRANSISTOR PNP POWER TRANSISTOR General Purpose Switching and Amplifier Applications DIM A B C D E F G H J K L M MIN - 6,35 0,96 29,90 10,69 5.20 16,64 11,15 - 3.84 ABSOLUTE MAXIM UM RATINGS Collector-base voltage open emitter


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    2N3055SPL MJ2955SPL PDF

    pin configuration transistor 2n3055

    Abstract: 2N3055 MJ2955 power transistor 2n3055 Transistor 2n3055 pin configuration transistor mj2955 pin configuration 2N3055 transistor 2N3055
    Text: IL 2N3055 MJ2955 2N3055 MJ2955 NPN POWER TRANSISTOR PNP POWER TRANSISTOR General Purpose Switching and Amplifier Applications DIM MIN A B C D - E F G H J K L M - 6.35 0,96 29,90 10,69 5.20 16,64 11,15 - 3.84 ABSOLUTE MAXIMUM RATINGS Collector-base voltage open emitter


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    2N3055 MJ2955 MJ2955 pin configuration transistor 2n3055 2N3055 MJ2955 power transistor 2n3055 Transistor 2n3055 pin configuration transistor mj2955 pin configuration 2N3055 transistor PDF

    m0spec 2N3055

    Abstract: 2N6594 2n3055 collector characteristic curve 2N3055 2N6569 S200 200 Ampere power transistor S200C
    Text: ¿2&M0SPEC PNP SILICON POWER TRANSISTOR PNP 2N6594 The 2N6594 is a general-purpose,EPIBAS power transistor designed for low voltage amplifier power switching applica­ tions. It is a complement to the NPN 2N6569 FEATURES: * Safe Operating Area- Full Power Rating to 40V


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    2N6594 2N6569 2N3055 2N6S94 m0spec 2N3055 2n3055 collector characteristic curve 2N3055 2N6569 S200 200 Ampere power transistor S200C PDF