FS20R06XE3
Abstract: aeg powerblock tt bsm25gp120 b2 thyristor aeg aeg powerblock tt 32 n STR W 6856 DATA SHEET HIGH VOLTAGE ISOLATION DZ 2101 FS450R12KE3 S1 MR 4710 IC aeg powerblock dd
Text: Power Semiconductors » Short Form Catalog » 2004 A Wide Range In Short Words. An Infineon Technologies Company go to content go to content eupec eupec European Power Semiconductors and Electronics Company – is situated in Warstein and is one of the world’s leading manufacturers of Power Semiconductors
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D-59581
FS20R06XE3
aeg powerblock tt
bsm25gp120 b2
thyristor aeg
aeg powerblock tt 32 n
STR W 6856 DATA SHEET
HIGH VOLTAGE ISOLATION DZ 2101
FS450R12KE3 S1
MR 4710 IC
aeg powerblock dd
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RX1214B170W
Abstract: 100A101
Text: DISCRETE SEMICONDUCTORS DATA SHEET RX1214B170W Microwave power transistor Product specification Supersedes data of December 1994 1997 Feb 18 Philips Semiconductors Product specification Microwave power transistor FEATURES • Suitable for short and medium
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RX1214B170W
SCA53
127147/00/02/pp12
RX1214B170W
100A101
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MF1011B900Y
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET MF1011B900Y Microwave power transistor Product specification Supersedes data of December 1994 1997 Feb 18 Philips Semiconductors Product specification Microwave power transistor FEATURES • Suitable for short and medium
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MF1011B900Y
SCA53
127147/00/02/pp12
MF1011B900Y
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET RX1214B350Y NPN microwave power transistor Product specification Superseded data of November 1994 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Suitable for short and medium
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RX1214B350Y
OT439
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MX1011B700Y
Abstract: MRA444
Text: DISCRETE SEMICONDUCTORS DATA SHEET MX1011B700Y NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Suitable for short and medium
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MX1011B700Y
SCA53
127147/00/02/pp12
MX1011B700Y
MRA444
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RX1214B350Y
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET RX1214B350Y NPN microwave power transistor Product specification Superseded data of November 1994 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Suitable for short and medium
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RX1214B350Y
SCA53
127147/00/02/pp12
RX1214B350Y
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RX1214B130Y
Abstract: RX1214B80W
Text: DISCRETE SEMICONDUCTORS DATA SHEET RX1214B80W; RX1214B130Y NPN microwave power transistors Product specification Supersedes data of November 1994 1997 Feb 14 Philips Semiconductors Product specification NPN microwave power transistors FEATURES • Suitable for short and medium
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RX1214B80W;
RX1214B130Y
SCA53
127147/00/02/pp12
RX1214B130Y
RX1214B80W
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET RX1214B80W; RX1214B130Y NPN microwave power transistors Product specification Supersedes data of November 1994 1997 Feb 14 Philips Semiconductors Product specification NPN microwave power transistors FEATURES • Suitable for short and medium
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RX1214B80W;
RX1214B130Y
OT439
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BLS3135-10
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D324 BLS3135-10 Microwave power transistor Product specification 2000 Feb 01 Philips Semiconductors Product specification Microwave power transistor BLS3135-10 FEATURES PINNING - SOT445C • Suitable for short and medium pulse applications
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M3D324
BLS3135-10
OT445C
603516/01/pp12
BLS3135-10
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BLS3135-20
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET halfpage M3D259 BLS3135-20 Microwave power transistor Product specification 2000 Feb 01 Philips Semiconductors Product specification Microwave power transistor BLS3135-20 FEATURES PINNING - SOT422A • Suitable for short and medium pulse applications
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M3D259
BLS3135-20
OT422A
603516/01/pp12
BLS3135-20
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MX1011B200Y
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET MX1011B200Y Microwave power transistor Product specification Supersedes data of January 1995 1997 Feb 18 Philips Semiconductors Product specification Microwave power transistor FEATURES • Suitable for short and medium pulse applications up to 100 µs
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MX1011B200Y
SCA53
127121/00/02/pp12
MX1011B200Y
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BLS2731-20
Abstract: RF POWER TRANSISTOR 2.7 ghz 3.1 ghz list part number
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D324 BLS2731-20 Microwave power transistor Product specification Supersedes data of 1998 Mar 06 1998 Nov 25 Philips Semiconductors Product specification Microwave power transistor BLS2731-20 FEATURES PINNING - SOT445C • Suitable for short and medium pulse applications
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M3D324
BLS2731-20
OT445C
SCA60
125108/00/04/pp8
BLS2731-20
RF POWER TRANSISTOR 2.7 ghz 3.1 ghz list part number
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transistor SMD DK rc
Abstract: transistor SMD DK RF NPN POWER TRANSISTOR C 10-12 GHZ RF NPN POWER TRANSISTOR 2.5 GHZ BLS2731-110 SOT423 ic smd 342
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLS2731-110 Microwave power transistor Product specification Supersedes data of 1997 Nov 05 1998 Jan 30 Philips Semiconductors Product specification Microwave power transistor BLS2731-110 PINNING - SOT423A FEATURES • Suitable for short and medium pulse applications
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BLS2731-110
OT423A
SCA57
125108/00/04/pp12
transistor SMD DK rc
transistor SMD DK
RF NPN POWER TRANSISTOR C 10-12 GHZ
RF NPN POWER TRANSISTOR 2.5 GHZ
BLS2731-110
SOT423
ic smd 342
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BLS2731-50
Abstract: atc 700a
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLS2731-50 Microwave power transistor Product specification Supersedes data of 1997 Nov 05 1998 Jan 30 Philips Semiconductors Product specification Microwave power transistor BLS2731-50 PINNING - SOT422A FEATURES • Suitable for short and medium pulse applications
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BLS2731-50
OT422A
SCA57
125108/00/03/pp8
BLS2731-50
atc 700a
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skB 2802
Abstract: tp 2116 skbz 25 12
Text: Calculation of the Maximum Virtual Junction Temperature Reached Under Short-time or Intermittent Duty1 Under short-time or intermittent load higher current ratings are permissible for the power semiconductors than those given in the data sheets for continuous operating. It is,
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programmab93
skB 2802
tp 2116
skbz 25 12
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SKM151A4R
Abstract: No abstract text available
Text: Calculation of the Maximum Virtual Junction Temperature Reached Under Short-time or Intermittent Duty1 Under short-time or intermittent load higher current ratings are permissible for the power semiconductors than those given in the data sheets for continuous operating. It is,
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62792
Abstract: semikron skt 24 semikron data 01155 6822 008028 MOSFET 2906 semikron skt 240 180A020 skt16
Text: Calculation of the Maximum Virtual Junction Temperature Reached Under Short-time or Intermittent Duty1 Under short-time or intermittent load higher current ratings are permissible for the power semiconductors than those given in the data sheets for continuous operating. It is,
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skm 200 gb 122 d
Abstract: semikron skkt 132/ 14/ E Semitrans M SKD 100 GAL 124d Semikron SKR 26 /12 semikron skkh 161 semikron skkt 162/ 12/ D semipack skkt 161 sknh 210 semikron skt 240 SKKL131
Text: Calculation of the Maximum Virtual Junction Temperature Reached Under Short-time or Intermittent Duty1 Under short-time or intermittent load higher current ratings are permissible for the power semiconductors than those given in the data sheets for continuous operating. It is,
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05801
Abstract: 250GD128D the calculation of the power dissipation for the IGBT computer calculation of the power dissipation for the igbt 400GD diode IN 5402 skim250gd128d skim500gd128dm K/NSL-6952
Text: Calculation of the Maximum Virtual Junction Temperature Reached Under Short-time or Intermittent Duty1 Under short-time or intermittent load higher current ratings are permissible for the power semiconductors than those given in the data sheets for continuous operating. It is,
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300GD063D
125GD127D
85GD127D
350GD063DM
250GD128D
350GD128DM
400GD063D
400GD128D
500GD128DM
05801
250GD128D
the calculation of the power dissipation for the IGBT
computer calculation of the power dissipation for the igbt
400GD
diode IN 5402
skim250gd128d
skim500gd128dm
K/NSL-6952
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SKM 400GB062D
Abstract: 62792 02634 SKM 400GD063D heatsink for skkt 72 semikron skt 140 IEC 974-1 Semitrans M SKD 100 GAL 124d 6822 semikron skkt 31
Text: Calculation of the Maximum Virtual Junction Temperature Reached Under Short-time or Intermittent Duty1 Under short-time or intermittent load higher current ratings are permissible for the power semiconductors than those given in the data sheets for continuous operating. It is,
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300GD063D
125GD127D
85GD127D
350GD063DM
250GD128D
350GD128DM
400GD063D
400GD128D
500GD128DM
SKM 400GB062D
62792
02634
SKM 400GD063D
heatsink for skkt 72
semikron skt 140
IEC 974-1
Semitrans M SKD 100 GAL 124d
6822
semikron skkt 31
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IEC 974-1
Abstract: SKM 400GB062D 195GB124DN 200gb 400GB062D 200GB123D 2119 SKM400GB123D 300GB174D 145GB123D
Text: Calculation of the Maximum Virtual Junction Temperature Reached Under Short-time or Intermittent Duty1 Under short-time or intermittent load higher current ratings are permissible for the power semiconductors than those given in the data sheets for continuous operating. It is,
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SKN 12\08
Abstract: Semikron SKR 26 /12 heatsink SKN semikron SKN 71 007358
Text: Calculation of the Maximum Virtual Junction Temperature Reached Under Short-time or Intermittent Duty1 Under short-time or intermittent load higher current ratings are permissible for the power semiconductors than those given in the data sheets for continuous operating. It is,
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thyristor 0615
Abstract: 250068 005649 2533 74202 semikron skkh 161 semikron skkt 132/ 14/ E skkt 56 SKKH91 semikron 1798
Text: Calculation of the Maximum Virtual Junction Temperature Reached Under Short-time or Intermittent Duty1 Under short-time or intermittent load higher current ratings are permissible for the power semiconductors than those given in the data sheets for continuous operating. It is,
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programmab06178
thyristor 0615
250068
005649
2533
74202
semikron skkh 161
semikron skkt 132/ 14/ E
skkt 56
SKKH91
semikron 1798
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8051 timer internal structure
Abstract: 8051.BUS
Text: Philips Semiconductors Short-form preliminary specification Low voltage 16-bit microcontroller P90CL301BFH C100 FEATURES • Fully 68000 software compatible • Static design with 32-bit internal structure • Power saving modes: Power-down, Standby and Idle
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OCR Scan
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16-bit
32-bit
D15/P7
8051 timer internal structure
8051.BUS
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