"RF power MOSFETs"
Abstract: LE17 LMP1603 LMP2003 rf mosfet power amplifier MOSFET AMPLIFIER For MOBILE RADIO
Text: RF AMPLIFIER MODULES Semelab is pleased to announce the first modules in a range designed in conjunction with LMT for Private Mobile Radio PMR systems. These modules utilise Semelab's own RF power MOSFETs in order to achieve: • High output power (5.5W typically)
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-25dBc)
LMP2003
LMP1603
"RF power MOSFETs"
LE17
LMP1603
LMP2003
rf mosfet power amplifier
MOSFET AMPLIFIER For MOBILE RADIO
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SK12DICT-ND
Abstract: DIL-16 SSOP-16 UCC3930-3 UCC3930-5 MicroPower
Text: UCC2930-3/-5 UCC3930-3/-5 PRELIMINARY Cellular Telephone Power Converter FEATURES DESCRIPTION • BiCMOS Low Power RF/Cellular Power Management • Negative Supply Voltage at 5mA for GaAs MESFET Amplifiers The UCC3930-3/-5 family of BiCMOS low power management controllers is designed for battery powered applications for RF/Cellular telephones, base stations, transmitters, receivers and pagers.
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UCC2930-3/-5
UCC3930-3/-5
UCC3930-3/-5
200mV)
SK12DICT-ND
DIL-16
SSOP-16
UCC3930-3
UCC3930-5
MicroPower
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Untitled
Abstract: No abstract text available
Text: NJM2278 300/400MHz Band 20mW Power Amplifier GENERAL DESCRIPTION The NJM2278 is a narrow band, small signal amplifier, especially designed for use as the final RF amplifier in 300MHz / 400MHz band transmitter. The amplifier produces an output power of up to
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NJM2278
300/400MHz
NJM2278
300MHz
400MHz
NJM2278F1
400MHz
400MHz,
30dBm
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NJM2278
Abstract: MURATA LQW18A NJM2278F1 RF 24N GRM21 LQW18A rf power amplifier 400MHz
Text: NJM2278 300/400MHz Band 20mW Power Amplifier ! ! PACKAGE OUTLINE GENERAL DESCRIPTION The NJM2278 is a narrow band, small signal amplifier, especially designed for use as the final RF amplifier in 300MHz / 400MHz band transmitter. The amplifier produces an output power of up to
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NJM2278
300/400MHz
NJM2278
300MHz
400MHz
NJM2278F1
400MHz
400MHz,
-j100
MURATA LQW18A
NJM2278F1
RF 24N
GRM21
LQW18A
rf power amplifier 400MHz
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Untitled
Abstract: No abstract text available
Text: NJM2278 300/400MHz Band 20mW Power Amplifier ! ! PACKAGE OUTLINE GENERAL DESCRIPTION The NJM2278 is a narrow band, small signal amplifier, especially designed for use as the final RF amplifier in 300MHz / 400MHz band transmitter. The amplifier produces an output power of up to
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NJM2278
300/400MHz
NJM2278
300MHz
400MHz
NJM2278F1
400MHz
400MHz,
Gai-j100
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BC548 TRANSISTOR REPLACEMENT
Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction
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BAP1321-02
BAP65-05
BAP65-03
BAP65-05W
BAP65-02
BAP63-03
BAP63-02
BAP64-03
BAP64-02
BB143
BC548 TRANSISTOR REPLACEMENT
TYN612 pin diagram
1n4007 smd, toshiba
S0817MH
TYN604 scr pin diagram
kmz51 compass
TRANSISTOR S1A 64 smd
toshiba l 300 laptop motherboard circuit diagram
JFET TRANSISTOR REPLACEMENT GUIDE j201
replacements for transistor NEC D 587
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Abstract: No abstract text available
Text: NJU7067 14µA/ch, 16V Operation, Rail-to-Rail Output Dual CMOS Operational Amplifier GENERAL DESCRIPTION The NJU7067 is a low power, high Voltage operation, dual CMOS Operational Amplifier. It is tolerant to RF noise. The NJU7067 can operate wide voltage range from
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NJU7067
NJU7067
NJU7067M
NJU7067©
11VPP
100pF
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12w 5d
Abstract: No abstract text available
Text: MITSUBISHI RF POWER TRANSISTOR 2SC3629 NPN EPITAXIAL PLANAR TY PE DESCRIPTION OUTLINE DRAWING 2SC3629 is a silicon NPN epitaxial planar type transistor designed fo r RF power amplifiers in UHF band 7.2 volts operation applications. Dimensions in mm FEATURES
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2SC3629
2SC3629
520MHz,
12w 5d
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2n3773 power Amplifier circuit diagrams
Abstract: SCR Handbook, rca HC2000H rca transistor npn a13 B0241C npn transistor RCA 467 40659 triac t6440m RCa T2850D DIAC D3202U
Text: RCA Power Devices This DATABOOK contains com plete technical information on the full line o f RCA solid-state power devices: power transistors, rf power transistors, power hybrid circuits, triacs, SCR’s, diacs, silicon rectifiers, and rectifier assemblies. A complete
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AN-6671
G4000)
G4000
2n3773 power Amplifier circuit diagrams
SCR Handbook, rca
HC2000H
rca transistor npn a13
B0241C
npn transistor RCA 467
40659
triac t6440m
RCa T2850D
DIAC D3202U
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF POWER TRANSISTOR 2SC3628 NPN EPITAXIAL PLANAR T Y P E DISCRETION OUTLINE DRAWING 2SC3628 is a silicon NPN epitaxial planar type transistor designed fo r RF power amplifiers in VHF band mobile radio applications. Dim ensions in m m FEATURES •
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2SC3628
2SC3628
175MHz
175MHz.
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RF POWER TRANSISTOR NPN
Abstract: mitsubishi RF POWER TRANSISTOR Mitsubishi databook 2SC3628 T-46
Text: MITSUBISHI RF POWER TRANSISTOR 2SC3628 NPN EPITAXIAL PLANAR T Y P E DISCRETIO N OUTLINE DRAWING 2SC3628 is a silicon NPN epitaxial planar type transistor designed fo r RF power amplifiers in VHF band mobile radio applications. Dimensions in mm FEATURES •
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2SC3628
175MHz
175MHz.
RF POWER TRANSISTOR NPN
mitsubishi RF POWER TRANSISTOR
Mitsubishi databook
T-46
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mb87006
Abstract: TRANSISTOR B0413 transistor bf 175
Text: Introduction and Quick Selection Guide Prescalers CMOS Phase—Locked Loops PLLs Super PLLs (Single Chip PLLs/Prescalers) Super Analog RF Devices BiCMOS LSI RF Integrated Circuits Piezoelectric Devices/SAW Filters Power Management Switches Application Notes and Articles
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Untitled
Abstract: No abstract text available
Text: UCC2930-3/-5 UCC3930-3/-5 UNITRODE PRELIMINARY Cellular Telephone Power Converter FEATURES BiCMOS Low Power RF/Cellular Power Management Negative Supply Voltage at 5mA for GaAs MESFET Amplifiers Separate Micro-Power Logic Supply Enable Low Quiescent, 3mA, Operating
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UCC2930-3/-5
UCC3930-3/-5
200mV)
UCC3930-3/-5
UDG-96036-1
0SK12DICT-ND
UCC3930-3
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Untitled
Abstract: No abstract text available
Text: y UCC2930-3/-5 UCC3930-3/-5 UNITRO OE PRELIMINARY Cellular Telephone Power Converter DESCRIPTION FEATURES BiCMOS Low Power RF/Cellular Power Management Negative Supply Voltage at 5mA for GaAs MESFET Amplifiers Separate Micro-Power Logic Supply Enable Low Quiescent, 3mA, Operating
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UCC2930-3/-5
UCC3930-3/-5
200mV)
UCC3930-3/-5
UCC3930-3
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1N5411
Abstract: npn transistor RCA 467 CD4004T CA3051 CD4001D 40468A RCA 40822 40664 SCR rca 40583 2N5756
Text: for HF-VHF-UHF-Microwave Applications RF Power Transistors R C A R F Power Transistors for 12.5 Volt Operation Hermetic Ceramic-Metal Stripline Package Flange TYPICAL OUTPUT POWER — WATTS 'j Hermetic Ceramic-Metal Coaxial Package (Large) Hermetic Ceramic-Metal
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CON-46
O-104
14-Lead
16-Lead
12-Lead
16-Lead
O-220AB
1N5411
npn transistor RCA 467
CD4004T
CA3051
CD4001D
40468A
RCA 40822
40664 SCR
rca 40583
2N5756
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF POWER TRANSISTOR 2SC3379 NPN EPITAXIAL PLANAR TY P E DESCRIPTION OUTLINE DRAWING Dim ensions in mm 2SC3379 is a silicon NPN epitaxial planar type transistor specifi cally designed for UHF power amplifier applications. FEATURES • High power gain: G p eè6.7dB
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2SC3379
2SC3379
520MHz,
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crb 455
Abstract: SSOP16 SSOP20 UMA1015AM external charge pump on fpc application UMA1015AM
Text: Philips Semiconductors Preliminary specification Low-power dual frequency synthesizer for radio communications FEATURES UMA1015AM GENERAL DESCRIPTION Two fully programmable RF dividers up to 1.1 GHz The UMA1015AM is a low-power dual frequency synthesizer for radio communications which operates in
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UMA1015AM
crb 455
SSOP16
SSOP20
UMA1015AM
external charge pump on fpc
application UMA1015AM
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UMA1015AM
Abstract: rf power detector voltage doubler
Text: Philips Semiconductors Objective specification Low-power dual frequency synthesizer for radio communications U M A1015AM FEATURES GENERAL DESCRIPTION • Two fully programmable RF dividers up to 1.1 GHz The UMA1015AM is a low-power dual frequency synthesizer for radio communications which operates in
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UMA1015AM
711DB2fc.
UMA1015AM
rf power detector voltage doubler
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Mitsubishi transistor databook
Abstract: No abstract text available
Text: MITSUBISHI RF POWER TRANSISTOR 2SC3022 NPN E P IT A X IA L PLANAR T Y P E DESCRIPTION 2SC3022 is a silicon NPN epitaxial planar type transistor specifi cally designed for UHF high power amplifier applications. OUTLINE DRAWING Dimensions in mm FEATURES •
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2SC3022
2SC3022
520MHz,
Mitsubishi transistor databook
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF POWER TRANSISTOR 2SC3629 NPN EPITA XIA L PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC3629 is a silicon NPN epitaxial planar type transistor designed for R F power amplifiers in U H F band 7.2 volts operation applications. C 1 .5 M A X Dimensions in mm
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2SC3629
2SC3629
520MHz,
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package drawing T46
Abstract: 2SC3404 1p TRANSISTOR RF POWER TRANSISTOR NPN vhf Mitsubishi databook T-46 npn transistor 80mw
Text: MITSUBISHI RF POWER TRANSISTOR 2SC3404 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2S C 3404 is a silicon NPN epitaxial planar type transistor specifi cally designed for VHF power amplifier applications. C 1 .5 M A X D im e n s io n s in m m
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2SC3404
2SC3404
75MHz,
175MHz,
package drawing T46
1p TRANSISTOR
RF POWER TRANSISTOR NPN vhf
Mitsubishi databook
T-46
npn transistor 80mw
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MRA402
Abstract: MD14 UMA1014 UMA1014T
Text: Philips Semiconductors Product specification Low-power frequency synthesizer mobile radio communications UMA1014 FEATURES • Single chip synthesizer; compatible with Philips cellular radio chipset p H l* BUS • Fully programmable RF divider • l2C interface for two-line serial bus
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UMA1014
711062b
MRA402
MD14
UMA1014
UMA1014T
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Untitled
Abstract: No abstract text available
Text: Q D 1 7b S f i MITSUBISHI RF POWER TRANSISTOR TIS 2SC3022 NPN EP IT A X IA L PLANAR T Y P E DESCRIPTION 2SC3022 is a silicon NPN epitaxial planar type transistor specifi cally designed for UHF high power amplifier applications. OUTLINE DRAWING Dim e n sio n s in mm
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2SC3022
2SC3022
520MHz,
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D7011
Abstract: adsp21msp59
Text: 7 7 -2 Com m unications W ireless, DDS & R F Circuits—Selection Guides_ CO M M U N IC ATIO N S IW IR E LE S S , DDS & RF) CIRCUITS Wireless GSM Baseband I/O Port Model AD7002 Power Vs Is V mA + 5 30 Power Model AD70J 0 Model A D7011 Vs
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10-Bit
dBc-63
dBc-55
dBc-70
12-Bit
AD7002
AD70J
ADSP-21m
D7011
adsp21msp59
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