um6k31n
Abstract: UM6K31
Text: UNISONIC TECHNOLOGIES CO., LTD UM6K31N Preliminary Power MOSFET SILICON N-CHANNEL MOSFET TRANSISTOR 6 DESCRIPTION 5 4 The UTC UM6K31N is a silicon N-channel MOS Field Effect Transistor. It can be used in switching applications. 3 SOT-363 SYMBOL ORDERING INFORMATION
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UM6K31N
OT-363
UM6K31N
UM6K31NL-AL6-R
UM6K31NG-AL6-R
OT-363
QW-R502-503
UM6K31
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF640 Power MOSFET 18A, 200V, 0.18OHM, N-CHANNEL POWER MOSFET DESCRIPTION These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in
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UF640
18OHM,
UF640
QW-R502-066
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uf640
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF640 Power MOSFET 18A, 200V, 0.18OHM, N-CHANNEL POWER MOSFET DESCRIPTION These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in
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UF640
18OHM,
UF640
QW-R502-066
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Untitled
Abstract: No abstract text available
Text: PBSM5240PF 40 V, 2 A PNP low VCEsat BISS transistor with N-channel Trench MOSFET Rev. 2 — 20 April 2011 Product data sheet 1. Product profile 1.1 General description Combination of PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and N-channel Trench MOSFET. The device is housed in a leadless medium power SOT1118
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PBSM5240PF
OT1118
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motorola sps transistor
Abstract: MRF21010
Text: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Available at: http://www.motorola.com/rf/ Tools RF Reference Design Library The RF MOSFET Line MRF21010 RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET DEVICE CHARACTERISTICS From Device Data Sheet
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MRF21010
RDMRF21010NCDMA
motorola sps transistor
MRF21010
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CRCW08052201FKEA
Abstract: CRCW080510R0FKE MRF21010-1 MRF21010
Text: Freescale Semiconductor Technical Data Document Number: MRF21010-1 Rev. 10, 10/2008 RF Power Field Effect Transistor MRF21010LR1 N-Channel Enhancement-Mode Lateral MOSFET 2110-2170 MHz, 10 W, 28 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFET • Typical W-CDMA Performance: -45 dBc ACPR, 2170 MHz, 28 Volts,
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MRF21010--1
MRF21010LR1
CRCW08052201FKEA
CRCW080510R0FKE
MRF21010-1
MRF21010
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transistor motorola 114-8
Abstract: Transistor z1 transistor motorola 351 motorola s 114-8 465B GSM1800 MRF18090A MRF18090AR3 motorola 1815 motorola 114-8
Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF18090A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF18090AR3 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFET Designed for GSM and GSM EDGE base station applications with frequencies
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MRF18090A/D
MRF18090AR3
transistor motorola 114-8
Transistor z1
transistor motorola 351
motorola s 114-8
465B
GSM1800
MRF18090A
MRF18090AR3
motorola 1815
motorola 114-8
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MMFT1N10ET1
Abstract: 1N10
Text: MMFT1N10E Medium Power Field Effect Transistor N−Channel Enhancement Mode Silicon Gate TMOS E−FETt SOT−223 for Surface Mount http://onsemi.com This advanced E−FET is a TMOS Medium Power MOSFET designed to withstand high energy in the avalanche and commutation
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MMFT1N10E
OT-223
MMFT1N10E/D
MMFT1N10ET1
1N10
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motorola transistor dpak marking
Abstract: 1N10 2N3904 AN569 MMFT1N10E MMFT1N10ET1 MMFT1N10ET3 SMD310
Text: MOTOROLA Order this document by MMFT1N10E/D SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor N–Channel Enhancement Mode Silicon Gate TMOS E–FETt MMFT1N10E Motorola Preferred Device SOT–223 for Surface Mount This advanced E–FET is a TMOS Medium Power MOSFET
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MMFT1N10E/D
MMFT1N10E
MMFT1N10E/D*
motorola transistor dpak marking
1N10
2N3904
AN569
MMFT1N10E
MMFT1N10ET1
MMFT1N10ET3
SMD310
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mosfet L 3055 motorola
Abstract: L 3055 motorola mosfet L 3055 motorola 3055 3055 sot-223 2N3904 AN569 MMFT3055E MMFT3055ET1 MMFT3055ET3
Text: MOTOROLA Order this document by MMFT3055E/D SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor N–Channel Enhancement Mode Silicon Gate TMOS E–FETt MMFT3055E Motorola Preferred Device SOT–223 for Surface Mount This advanced E–FET is a TMOS Medium Power MOSFET
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MMFT3055E/D
MMFT3055E
MMFT3055E/D*
mosfet L 3055 motorola
L 3055 motorola
mosfet L 3055
motorola 3055
3055 sot-223
2N3904
AN569
MMFT3055E
MMFT3055ET1
MMFT3055ET3
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AN569
Abstract: SMD310 4p03
Text: MOTOROLA Order this document by MMFT4P03HD/D SEMICONDUCTOR TECHNICAL DATA Advance Information MMFT4P03HD Medium Power Surface Mount Products TMOS P-Channel Field Effect Transistor Motorola Preferred Device MMFT4P03HD is an advanced power MOSFET which utilizes
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MMFT4P03HD/D
MMFT4P03HD
MMFT4P03HD
MMFT4P03HD/D*
AN569
SMD310
4p03
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CHM3055ZGP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD CHM3055ZGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 4.0 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-73/SOT-223 FEATURE
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CHM3055ZGP
SC-73/SOT-223
CHM3055ZGP
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CHT870GP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD CHT870GP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 0.250 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SOT-23 * Rugged and reliable.
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CHT870GP
OT-23
OT-23)
CHT870GP
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UT3419 Power MOSFET 20V, 3.5A P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC UT3419 is a P-channel enhancement MOSFET providing designers with excellent RDS ON , low gate charge. The gate voltage is as low as 2.5V.
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UT3419
UT3419
UT3419L-AE3-R
UT3419G-AE3-R
OT-23
QW-R502-391
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CHM1592GP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CHM1592GP CURRENT 500 mAmpere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-59/SOT-346 FEATURE
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CHM1592GP
SC-59/SOT-346
SC-59)
CHM1592GP
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P008B DIODE
Abstract: STN4NF03L
Text: STN4NF03L N-CHANNEL 30V - 0.039Ω - 6.5A SOT-223 STripFET II POWER MOSFET TYPE VDSS RDS on ID STN4NF03L 30V <0.05Ω 6.5A • ■ TYPICAL RDS(on) = 0.039Ω LOW THRESHOLD DRIVE 2 1 DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size™ ” stripbased process. The resulting transistor shows extremely high packing density for low on-resistance,
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STN4NF03L
OT-223
P008B DIODE
STN4NF03L
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P008B DIODE
Abstract: STN4NF03L
Text: STN4NF03L N-CHANNEL 30V - 0.039Ω - 4A SOT-223 STripFET POWER MOSFET TYPE STN4NF03L • ■ VDSS RDS on ID 30V <0.05Ω 4A 2 TYPICAL RDS(on) = 0.039Ω LOW THRESHOLD DRIVE 1 DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size ” stripbased process. The resulting transistor shows extremely high packing density for low on-resistance,
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STN4NF03L
OT-223
P008B DIODE
STN4NF03L
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LP2951
Abstract: BC847 921 smd transistor
Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF6522 - 70/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF6522−70R3 N - Channel Enhancement - Mode Lateral MOSFET Freescale Semiconductor, Inc. Designed for GSM 900 frequency band, the high gain and broadband
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MRF6522
MRF6522-70R3
MRF6522
LP2951
BC847
921 smd transistor
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CHT170
Abstract: at 028
Text: CHENMKO ENTERPRISE CO.,LTD CHT170 SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 0.5 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SOT-23 .071 1.80 .110 (2.80)
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CHT170
OT-23
OT-23)
500mA
CHT170
at 028
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CHT100GP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD CHT100GP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 1.1 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SOT-23 .019 0.50 .066 (1.70)
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CHT100GP
OT-23
OT-23)
1000m
CHT100GP
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CHT170GP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD CHT170GP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 0.5 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SOT-23 .019 0.50 .066 (1.70)
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CHT170GP
OT-23
OT-23)
500mA
CHT170GP
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CHT84GP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD CHT84GP SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 50 Volts CURRENT 0.13 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SOT-23 .019 0.50 .066 (1.70)
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CHT84GP
OT-23
OT-23)
-130m
CHT84GP
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transistor 2SK1603
Abstract: 2SK1603 2SK1723 2SK1118 transistor 2sk1723 MOSFET 2SK1358 Transistor Guide 2sk16 packages TYPES FOR MOSFET toshiba transistor smd code 2sk1358
Text: H it'll Voltage M SFKTs MOSFET Features Toshiba power MOSFET lineup ranges from 60V to 1000V and from 0.5A to 60A. All devices are enhancement types, which means the transistor is normally off. Our wide variety of different packages offers choices for all
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OT-89,
T0-220
2SK1488
2SK1865SM
2SK1531
2SK1745
2SK2057
2SK1544
O-220AB
2SK1723
transistor 2SK1603
2SK1603
2SK1118
transistor 2sk1723
MOSFET 2SK1358 Transistor Guide
2sk16
packages TYPES FOR MOSFET
toshiba transistor smd code
2sk1358
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K1118
Abstract: k1118 transistor MOSFET transistor k1118 transistor k1118 2SK1603 2SK1723 transistor 2SK1603 2SK1118 MOSFET 2SK1358 Transistor Guide transistor SMD 2S
Text: High Voltage MOSFETs MOSFET Features Toshiba power MOSFET lineup ranges from 60V to 1000V and from 0.5A to 60A. All devices are enhancement types, which means the transistor is normally off. Our wide variety of different packages offers choices for all possible designs.
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OT-89,
T0-220
2SK1488
2SK1865SM
2SK1723
2SK1769
2SK1603
2SK1356
2SK1767
2SK1913
K1118
k1118 transistor
MOSFET transistor k1118
transistor k1118
transistor 2SK1603
2SK1118
MOSFET 2SK1358 Transistor Guide
transistor SMD 2S
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