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    POWER MOSFET SMD PACKAGE Search Results

    POWER MOSFET SMD PACKAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH3R206NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH4R008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation

    POWER MOSFET SMD PACKAGE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    KTHC5513

    Abstract: No abstract text available
    Text: IC IC SMD Type Power MOSFET KTHC5513 Features Complementary N-Channel and P-Channel MOSFET Leadless SMD Package Featuring Complementary Pair Low RDS on in a ChipFET Package for High Efficiency Performance Low Profile ( 1.10 mm) Allows Placement in Extremely Thin


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    PDF KTHC5513 KTHC5513

    P Channel Low Gate Charge

    Abstract: KTHD3100C
    Text: IC IC SMD Type Power MOSFET KTHD3100C Features Complementary N-Channel and P-Channel MOSFET Leadless SMD Package Provides Great Thermal Characteristics Trench P-Channel for Low On Resistance Low Gate Charge N-Channel for Test Switching Absolute Maximum Ratings Ta = 25


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    PDF KTHD3100C P Channel Low Gate Charge KTHD3100C

    Untitled

    Abstract: No abstract text available
    Text: PD-91543C POWER MOSFET SURFACE MOUNT SMD-1 IRFN054 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFN054 0.020 Ω 55A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The


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    PDF PD-91543C IRFN054

    IRFN054

    Abstract: No abstract text available
    Text: PD - 91543B POWER MOSFET SURFACE MOUNT SMD-1 IRFN054 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFN054 0.020 Ω 55A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The


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    PDF 91543B IRFN054 IRFN054

    IRFN054

    Abstract: No abstract text available
    Text: PD-91543C POWER MOSFET SURFACE MOUNT SMD-1 IRFN054 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFN054 0.020 Ω 55A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The


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    PDF PD-91543C IRFN054 IRFN054

    Untitled

    Abstract: No abstract text available
    Text: NTHD3101F Power MOSFET and Schottky Diode −20 V, Fetky, P−Channel, −3.2 A, with 2.2A Schottky Barrier Diode, ChipFET] Features • • • • • • Leadless SMD Package Featuring a MOSFET and Schottky Diode 40% Smaller than TSOP−6 Package Leadless SMD Package Provides Great Thermal Characteristics


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    PDF NTHD3101F Dra17.

    Untitled

    Abstract: No abstract text available
    Text: PD - 91555A POWER MOSFET SURFACE MOUNT SMD-1 IRFNG40 1000V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFNG40 R DS(on) ID 3.5Ω 3.9A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The


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    PDF 1555A IRFNG40

    Untitled

    Abstract: No abstract text available
    Text: PD - 91545A POWER MOSFET SURFACE MOUNT SMD-1 IRFN044 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) 0.04 Ω IRFN044 ID 44A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The


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    PDF 1545A IRFN044

    smd marking DA QT

    Abstract: 24W16 C2608 SMD mosfet MARKING code TJ NTHD3133PFT1G
    Text: NTHD3133PF Power MOSFET and Schottky Diode -20 V, FETKYt, P-Channel, -4.4 A, with 3.7 A Schottky Barrier Diode, ChipFETt http://onsemi.com Features •ăLeadless SMD Package Featuring a MOSFET and Schottky Diode •ă40% Smaller than TSOP-6 Package •ăLeadless SMD Package Provides Great Thermal Characteristics


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    PDF NTHD3133PF NTDH3133PF/D smd marking DA QT 24W16 C2608 SMD mosfet MARKING code TJ NTHD3133PFT1G

    Untitled

    Abstract: No abstract text available
    Text: NTHD3133PF Power MOSFET and Schottky Diode -20 V, FETKYt, P-Channel, -4.4 A, with 3.7 A Schottky Barrier Diode, ChipFETt http://onsemi.com Features •ăLeadless SMD Package Featuring a MOSFET and Schottky Diode •ă40% Smaller than TSOP-6 Package •ăLeadless SMD Package Provides Great Thermal Characteristics


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    PDF NTHD3133PF NTDH3133PF/D

    IRFNG50

    Abstract: mosfet 10a 800v high power 91556A
    Text: PD - 91556A POWER MOSFET SURFACE MOUNT SMD-1 IRFNG50 1000V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFNG50 R DS(on) 2.0Ω ID 5.5A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The


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    PDF 1556A IRFNG50 IRFNG50 mosfet 10a 800v high power 91556A

    smd diode 39a

    Abstract: mosfet 10a 800v IRFNG40 mosfet 10a 800v high power smd+diode+39a
    Text: PD - 91555A POWER MOSFET SURFACE MOUNT SMD-1 IRFNG40 1000V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFNG40 R DS(on) ID 3.5Ω 3.9A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The


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    PDF 1555A IRFNG40 smd diode 39a mosfet 10a 800v IRFNG40 mosfet 10a 800v high power smd+diode+39a

    IRFN044

    Abstract: smd diode 44a
    Text: PD - 91545A POWER MOSFET SURFACE MOUNT SMD-1 IRFN044 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFN044 R DS(on) 0.04 Ω ID 44A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The


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    PDF 1545A IRFN044 IRFN044 smd diode 44a

    IRHNB7360SE

    Abstract: No abstract text available
    Text: PD - 91740B IRHNB7360SE 400V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-3 ™ RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHNB7360SE Radiation Level RDS(on) 100K Rads (Si) 0.20Ω ID 24A SMD-3 International Rectifier’s RADHardTM HEXFET® MOSFET


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    PDF 91740B IRHNB7360SE MIL-STD-750, MlL-STD-750, IRHNB7360SE

    IRHNA7264SE

    Abstract: RAD-HARD
    Text: PD - 91432C IRHNA7264SE 250V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHNA7264SE Radiation Level RDS(on) 100K Rads (Si) 0.11Ω ID 34A SMD-2 International Rectifier’s RADHardTM HEXFET® MOSFET


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    PDF 91432C IRHNA7264SE MIL-STD-750, MlL-STD-750, IRHNA7264SE RAD-HARD

    IRHNA7460SE

    Abstract: HEXFET Power MOSFET SMD2
    Text: PD - 91399B RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 IRHNA7460SE 500V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHNA7460SE Radiation Level RDS(on) 100K Rads (Si) 0.32Ω ID 20A SMD-2 International Rectifier’s RADHardTM HEXFET® MOSFET


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    PDF 91399B IRHNA7460SE MIL-STD-750, MlL-STD-750, IRHNA7460SE HEXFET Power MOSFET SMD2

    IRHNA7360SE

    Abstract: No abstract text available
    Text: PD-91398B RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 IRHNA7360SE 400V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHNA7360SE Radiation Level RDS(on) 100K Rads (Si) 0.20Ω ID 24A SMD-2 International Rectifier’s RADHardTM HEXFET® MOSFET


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    PDF PD-91398B IRHNA7360SE 12volt MIL-STD-750, 320volt MlL-STD-750, IRHNA7360SE

    IRHNA7460SE

    Abstract: No abstract text available
    Text: PD - 91399A IRHNA7460SE 500V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 ™ RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHNA7460SE Radiation Level RDS(on) 100K Rads (Si) 0.32Ω ID 20A SMD-2 International Rectifier’s RADHardTM HEXFET® MOSFET


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    PDF 1399A IRHNA7460SE MIL-STD-750, MlL-STD-750, IRHNA7460SE

    IRHN7250SE

    Abstract: No abstract text available
    Text: PD - 91780B IRHN7250SE 200V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-1 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHN7250SE Radiation Level RDS(on) 100K Rads (Si) 0.10Ω ID 26A SMD-1 International Rectifier’s RADHardTM HEXFET® MOSFET


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    PDF 91780B IRHN7250SE MIL-STD-750, MlL-STD-750, IRHN7250SE

    Untitled

    Abstract: No abstract text available
    Text: PD - 91432C IRHNA7264SE 250V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHNA7264SE Radiation Level RDS(on) 100K Rads (Si) 0.11Ω ID 34A SMD-2 International Rectifier’s RADHardTM HEXFET® MOSFET


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    PDF 91432C IRHNA7264SE MIL-STD-750, MlL-STD-750,

    IRHNA7360SE

    Abstract: No abstract text available
    Text: PD - 91398A IRHNA7360SE 400V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 ™ RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHNA7360SE Radiation Level RDS(on) 100K Rads (Si) 0.20Ω ID 24A SMD-2 International Rectifier’s RADHardTM HEXFET® MOSFET


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    PDF 1398A IRHNA7360SE MIL-STD-750, MlL-STD-750, IRHNA7360SE

    IRHNB7264SE

    Abstract: No abstract text available
    Text: PD - 91738A IRHNB7264SE 250V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-3 ™ RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHNB7264SE Radiation Level RDS(on) 100K Rads (Si) 0.11Ω ID 34A SMD-3 International Rectifier’s RADHardTM HEXFET® MOSFET


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    PDF 1738A IRHNB7264SE MIL-STD-750, MlL-STD-750, IRHNB7264SE

    Untitled

    Abstract: No abstract text available
    Text: PD - 91738A IRHNB7264SE 250V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-3 ™ RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHNB7264SE Radiation Level RDS(on) 100K Rads (Si) 0.11Ω ID 34A SMD-3 International Rectifier’s RADHardTM HEXFET® MOSFET


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    PDF 1738A IRHNB7264SE MIL-STD-750, MlL-STD-750,

    Untitled

    Abstract: No abstract text available
    Text: NTHD4N02F Power MOSFET and Schottky Diode 20 V, 2.7 A, N−Channel, with 2.2 A Schottky Barrier Diode, ChipFET http://onsemi.com Features • • • • • MOSFET Leadless SMD Package Featuring a MOSFET and Schottky Diode 40% Smaller than TSOP−6 Package with Better Thermals


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    PDF NTHD4N02F NTHD4N02F/D