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    POWER MOSFET SC-59 80 VOLTS Search Results

    POWER MOSFET SC-59 80 VOLTS Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    POWER MOSFET SC-59 80 VOLTS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MTB33N10E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. High Energy Power FET D2PAK for Surface Mount Designer's MTB33N10E Motorola Preferred Device TMOS POWER FET 33 AMPERES 100 VOLTS RDS on = 0.06 OHM N–Channel Enhancement–Mode Silicon Gate


    Original     		PDF MTB33N10E/D MTB33N10E MTB33N10E/D

    AN569

    Abstract: MTB33N10E SMD310
    Text: MOTOROLA Order this document by MTB33N10E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. High Energy Power FET D2PAK for Surface Mount Designer's MTB33N10E Motorola Preferred Device TMOS POWER FET 33 AMPERES 100 VOLTS RDS on = 0.06 OHM N–Channel Enhancement–Mode Silicon Gate


    Original     		PDF MTB33N10E/D MTB33N10E MTB33N10E/D* AN569 MTB33N10E SMD310

    IGBT Battery 120 watt Charger circuit diagrams

    Abstract: tl494 spice model four relay stabilizer circuit diagram 650 va gsm door lock circuit diagram MRC 433 mosfet MC34066 SOLUTION FOR SMPS USING TL494 MOSFET ESD Rated TL594 phone charger car power inverter TL494
    Text: BRD8016/D Rev. 0, Nov-2000 Wireless Component Solutions for Handsets and Accessories Wireless Component Solutions for Handsets and Accessories BRD8016/D Rev. 0, Nov–2000  SCILLC, 2000 “All Rights Reserved’’ WIRELESS EZFET is a trademark of Semiconductor Components Industries, LLC SCILLC .


    Original     		PDF BRD8016/D Nov-2000 r14525 IGBT Battery 120 watt Charger circuit diagrams tl494 spice model four relay stabilizer circuit diagram 650 va gsm door lock circuit diagram MRC 433 mosfet MC34066 SOLUTION FOR SMPS USING TL494 MOSFET ESD Rated TL594 phone charger car power inverter TL494

    schottky power rectifier MOTOROLA

    Abstract: motorola transistor dpak marking 2n2222 surface mount 2n2222 SOD-123 1N5817 2N2222 2N6277 MBRV7030CTL SMD310
    Text: MOTOROLA Order this document by MBRV7030CTL/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet SWITCHMODE MBRV7030CTL Designer's Schottky Power Rectifier Motorola Preferred Device D3PAK Power Surface Mount Package SCHOTTKY BARRIER RECTIFIER 70 AMPERES 30 VOLTS


    Original     		PDF MBRV7030CTL/D MBRV7030CTL schottky power rectifier MOTOROLA motorola transistor dpak marking 2n2222 surface mount 2n2222 SOD-123 1N5817 2N2222 2N6277 MBRV7030CTL SMD310

    AN569

    Abstract: MTB75N03HDL SMD310
    Text: MOTOROLA Order this document by MTB75N03HDL/D SEMICONDUCTOR TECHNICAL DATA Advanced Information MTB75N03HDL HDTMOS E-FET. High Density Power FET D2PAK for Surface Mount Motorola Preferred Device TMOS POWER FET LOGIC LEVEL 75 AMPERES 25 VOLTS RDS on = 9 mOHM


    Original     		PDF MTB75N03HDL/D MTB75N03HDL MTB75N03HDL/D* AN569 MTB75N03HDL SMD310

    733 mosfet

    Abstract: No abstract text available
    Text: NTP85N03, NTB85N03 Power MOSFET 85 Amps, 28 Volts N−Channel TO−220 and D2PAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com Typical Applications


    Original     		PDF NTP85N03, NTB85N03 O-220 O-220AB 418AA 733 mosfet

    TO-220AB footprint

    Abstract: No abstract text available
    Text: NTB90N02, NTP90N02 Power MOSFET 90 Amps, 24 Volts N−Channel D2PAK and TO−220 Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com Typical Applications


    Original     		PDF NTB90N02, NTP90N02 O-220 O-220AB TO-220AB footprint

    T33N10E

    Abstract: T33N10
    Text: MTB33N10E Preferred Device Power MOSFET 33 Amps, 100 Volts N−Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for


    Original     		PDF MTB33N10E MTB33N10E/D T33N10E T33N10

    T33N10E

    Abstract: T33N10 AN569 MTB33N10E MTB33N10ET4
    Text: MTB33N10E Preferred Device Power MOSFET 33 Amps, 100 Volts N–Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for


    Original     		PDF MTB33N10E r14525 MTB33N10E/D T33N10E T33N10 AN569 MTB33N10E MTB33N10ET4

    AN569

    Abstract: MTD6N15 SMD310 mosfet transistor 800 volts.200 amperes
    Text: MOTOROLA Order this document by MTD6N15/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MTD6N15 Power Field Effect Transistor DPAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 6.0 AMPERES 150 VOLTS RDS on = 0.3 OHM


    Original     		PDF MTD6N15/D MTD6N15 MTD6N15/D* TransistorMTD6N15/D AN569 MTD6N15 SMD310 mosfet transistor 800 volts.200 amperes

    24N6L

    Abstract: step recovery diode
    Text: NTD24N06L Power MOSFET 24 Amps, 60 Volts, Logic Level N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com Typical Applications 24 AMPERES


    Original     		PDF NTD24N06L 24N6L 2500/Tape NTD24N06L/D step recovery diode

    20N06L

    Abstract: 712 DIODE marking sot23
    Text: NTD20N06L Power MOSFET 20 Amps, 60 Volts, Logic Level N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Typical Applications Power Supplies Converters Power Motor Controls


    Original     		PDF NTD20N06L tpv10 tpv10 20N06L 712 DIODE marking sot23

    35N15

    Abstract: W35N15
    Text: NTB35N15 Power MOSFET 37 Amps, 150 Volts N−Channel Enhancement−Mode D2PAK Features • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • http://onsemi.com Fast Recovery Diode Avalanche Energy Specified IDSS and RDS on Specified at Elevated Temperature


    Original     		PDF NTB35N15 tpv10 35N15 W35N15

    t75N03hdl

    Abstract: No abstract text available
    Text: MTB75N03HDL Preferred Device Power MOSFET 75 Amps, 25 Volts, Logic Level N−Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for


    Original     		PDF MTB75N03HDL r14525 MTB75N03HDL/D t75N03hdl

    mj 1504 transistor

    Abstract: mj 1504 scheme MTV32N20E AN569 SMD310 transistor mj 1504
    Text: MOTOROLA Order this document by MTV32N20E/D SEMICONDUCTOR TECHNICAL DATA Advance Information TMOS E−FET. Power Field Effect Transistor D3PAK for Surface Mount MTV32N20E TMOS POWER FET 32 AMPERES 200 VOLTS RDS on = 0.075 OHM N−Channel Enhancement−Mode Silicon Gate


    Original     		PDF MTV32N20E/D MTV32N20E MTV32N20E/D* mj 1504 transistor mj 1504 scheme MTV32N20E AN569 SMD310 transistor mj 1504

    mj 1504 transistor

    Abstract: AN569 MTV32N20E SMD310 mj 1504 scheme
    Text: MOTOROLA Order this document by MTV32N20E/D SEMICONDUCTOR TECHNICAL DATA Advance Information MTV32N20E TMOS E-FET. Power Field Effect Transistor D3PAK for Surface Mount TMOS POWER FET 32 AMPERES 200 VOLTS RDS on = 0.075 OHM N–Channel Enhancement–Mode Silicon Gate


    Original     		PDF MTV32N20E/D MTV32N20E MTV32N20E/D* mj 1504 transistor AN569 MTV32N20E SMD310 mj 1504 scheme

    MTB75N03HDL

    Abstract: t75N03hdl AN569 MTB75N03HDLT4 t75n03hd
    Text: MTB75N03HDL Preferred Device Power MOSFET 75 Amps, 25 Volts, Logic Level N–Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for


    Original     		PDF MTB75N03HDL r14525 MTB75N03HDL/D MTB75N03HDL t75N03hdl AN569 MTB75N03HDLT4 t75n03hd

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MTB50P03HDL/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet HDTMOS E-FET. High Energy Power FET D2PAK for Surface Mount Designer's MTB50P03HDL Motorola Preferred Device TMOS POWER FET LOGIC LEVEL 50 AMPERES 30 VOLTS RDS on = 0.025 OHM


    Original     		PDF MTB50P03HDL/D MTB50P03HDL MTB50P03HDL/D*

    MOSFET SC-59 power

    Abstract: AN569 MTD6P10E SMD310
    Text: MOTOROLA Order this document by MTD6P10E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor DPAK for Surface Mount Designer's MTD6P10E Motorola Preferred Device TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS on = 0.66 OHM


    Original     		PDF MTD6P10E/D MTD6P10E MTD6P10E/D* MOSFET SC-59 power AN569 MTD6P10E SMD310

    AN569

    Abstract: MTD10N10EL SMD310
    Text: MOTOROLA Order this document by MTD10N10EL/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor DPAK for Surface Mount Designer's MTD10N10EL Motorola Preferred Device TMOS POWER FET 10 AMPERES 100 VOLTS RDS on = 0.22 OHM


    Original     		PDF MTD10N10EL/D MTD10N10EL MTD10N10EL/D* AN569 MTD10N10EL SMD310

    MTD5N10

    Abstract: MTD6N10E AN569 SMD310 SOT 23 MOSFET
    Text: MOTOROLA Order this document by MTD6N10E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor DPAK for Surface Mount Designer's MTD6N10E Motorola Preferred Device TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS on = 0.400 OHM


    Original     		PDF MTD6N10E/D MTD6N10E MTD6N10E/D* MTD5N10 MTD6N10E AN569 SMD310 SOT 23 MOSFET

    PIN CPK

    Abstract: AN569 MTB60N06HD SMD310 MTB60N06HD-D
    Text: MOTOROLA Order this document by MTB60N06HD/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet HDTMOS E-FET. High Energy Power FET D2PAK for Surface Mount Designer's MTB60N06HD Motorola Preferred Device TMOS POWER FET 60 AMPERES 60 VOLTS RDS on = 0.014 OHM N–Channel Enhancement–Mode Silicon Gate


    Original     		PDF MTB60N06HD/D MTB60N06HD MTB60N06HD/D* PIN CPK AN569 MTB60N06HD SMD310 MTB60N06HD-D

    power MOSFET SC-59 80 Volts

    Abstract: AN569 MTB40N10E SMD310 PIN CPK
    Text: MOTOROLA Order this document by MTB40N10E/D SEMICONDUCTOR TECHNICAL DATA Advance Data Sheet MTB40N10E TMOS E-FET. Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 40 AMPERES 100 VOLTS RDS on = 0.04 OHM This advanced TMOS E–FET is designed to withstand high


    Original     		PDF MTB40N10E/D MTB40N10E power MOSFET SC-59 80 Volts AN569 MTB40N10E SMD310 PIN CPK

    AN569

    Abstract: MTB60N05HDL SMD310
    Text: MOTOROLA Order this document by MTB60N05HDL/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet HDTMOS E-FET. High Energy Power FET D2PAK for Surface Mount Designer's MTB60N05HDL Motorola Preferred Device TMOS POWER FET 60 AMPERES 50 VOLTS RDS on = 0.014 OHM


    Original     		PDF MTB60N05HDL/D MTB60N05HDL AN569 MTB60N05HDL SMD310