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    POWER MOSFET IRF DATA Search Results

    POWER MOSFET IRF DATA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    POWER MOSFET IRF DATA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRf 334

    Abstract: No abstract text available
    Text: PD - 95503 IRF5804PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free VDSS RDS on max (mW) ID -40V 198@VGS = -10V 334@VGS = -4.5V -2.5A -2.0A Description These P-channel HEXFET® Power MOSFETs from


    Original     		PDF IRF5804PbF OT-23. IRf 334

    IRF Power MOSFET code marking

    Abstract: IRF MOSFET 10A P power MOSFET IRF data MOSFET 150 N IRF IRF n 30v MOSFET IRF 5804 IRF5800 IRF5801 MOSFET IRF 94 IRF5852
    Text: PD - 95476A IRF5806PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free VDSS RDS on max ID -20V 86mΩ@VGS = -4.5V 147mΩ@VGS = -2.5V -4.0A Description These P-channel MOSFETs from International Rectifier


    Original     		PDF 5476A IRF5806PbF OT-23. IRF Power MOSFET code marking IRF MOSFET 10A P power MOSFET IRF data MOSFET 150 N IRF IRF n 30v MOSFET IRF 5804 IRF5800 IRF5801 MOSFET IRF 94 IRF5852

    power MOSFET IRF data

    Abstract: IRF Power MOSFET code marking IRF5850PBF mosfet p-channel 10A irf IRF5800 IRF5801 IRF5850 IRF5852 mosfet irf p-channel irf 2010
    Text: PD - 95506 IRF5850PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free VDSS = -20V RDS on = 0.135Ω Top View Description These P-channel MOSFETs from International Rectifier


    Original     		PDF IRF5850PbF IRF5850 power MOSFET IRF data IRF Power MOSFET code marking IRF5850PBF mosfet p-channel 10A irf IRF5800 IRF5801 IRF5852 mosfet irf p-channel irf 2010

    IRF FET

    Abstract: IRf 48 MOSFET IRF n 30v pcb diagram for 12v charge controller mosfet p channel irf McMaster-Carr MCR03EZHJ IR3624MPBF IRF7823PBF IRF7832Z
    Text: IRPP3624-12A POWIR+ Chipset Reference Design #0612 12Amp Single Phase Synchronous Buck POWIR+TM Chipset Reference Design using IR3624MPBF PWM & Driver IC and IRF7823 and IRF7832Z MOSFET By Steve Oknaian, Senior Applications Engineer www.irf.com RD#0612 1 Table of Contents


    Original     		PDF IRPP3624-12A 12Amp IR3624MPBF IRF7823 IRF7832Z IRPP3624-5A 600kHz IR3624M IRF8910 IRF FET IRf 48 MOSFET IRF n 30v pcb diagram for 12v charge controller mosfet p channel irf McMaster-Carr MCR03EZHJ IRF7823PBF

    IRFB4310

    Abstract: irf 540 mosfet IRFS4310 AN-994 IRFSL4310 irf 30A
    Text: PD - 96894A IRFB4310 IRFS4310 IRFSL4310 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits HEXFET Power MOSFET D VDSS RDS on typ. max.


    Original     		PDF 6894A IRFB4310 IRFS4310 IRFSL4310 O-220 O-220AB O-262 IRFB4310 irf 540 mosfet IRFS4310 AN-994 IRFSL4310 irf 30A

    mosfet p-channel 300v irf

    Abstract: P-Channel 200V MOSFET TSOP6 Si3443DVPbF IRF5850 IRF5851 IRF5852 mosfet 23 Tsop-6 PD-95240 p-channel 250V 30A power mosfet IRF 100A 500V
    Text: PD-95240 Si3443DVPbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel -2.5V Rated Lead-Free D A D 1 6 2 5 3 4 VDSS = -20V D G D S RDS on = 0.065Ω Top View Description These P-channel MOSFETs from International Rectifier


    Original     		PDF PD-95240 Si3443DVPbF OT-23. mosfet p-channel 300v irf P-Channel 200V MOSFET TSOP6 IRF5850 IRF5851 IRF5852 mosfet 23 Tsop-6 PD-95240 p-channel 250V 30A power mosfet IRF 100A 500V

    MOSFET IRF 380

    Abstract: MOSFET IRF 1010 NS4263 AN-994 IRFB4610 IRFS4610 IRFSL4610 irf 100v 100A
    Text: PD - 96906C IRFB4610 IRFS4610 IRFSL4610 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt


    Original     		PDF 96906C IRFB4610 IRFS4610 IRFSL4610 O-220AB O-262 EIA-418. MOSFET IRF 380 MOSFET IRF 1010 NS4263 AN-994 IRFB4610 IRFS4610 IRFSL4610 irf 100v 100A

    z44n

    Abstract: mosfet z44n specification of mosfet irf IRF MOSFET driver IRF Power MOSFET code marking IRF n CHANNEL MOSFET 1N4148 marking SOT89 MARKING CODE CL sot89 Marking mosfet RL Z44N
    Text: AP436 Synchronous Rectifier MOSFET Driver „ Features „ General Descriptions - VOUT slew-rate minimum 100V/uS @ CL=3000pF - IOUT sink & source =1.2 / 0.9 A - Safety considered. - Reduce power system thermal & increase system efficiency. - Pb-free packages: SOT89-5L, SOP-8L


    Original     		PDF AP436 00V/uS 3000pF OT89-5L, AP436 z44n mosfet z44n specification of mosfet irf IRF MOSFET driver IRF Power MOSFET code marking IRF n CHANNEL MOSFET 1N4148 marking SOT89 MARKING CODE CL sot89 Marking mosfet RL Z44N

    AN-994

    Abstract: No abstract text available
    Text: PD - 95936B IRFB4610PbF IRFS4610PbF IRFSL4610PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits l Lead-Free HEXFET Power MOSFET D G


    Original     		PDF 95936B IRFB4610PbF IRFS4610PbF IRFSL4610PbF O-262 O-220AB EIA-418. AN-994

    irf 210 mosfet

    Abstract: IRFB3206 AN-994 IRF 150a IRF 840 MOSFET irf 1040
    Text: PD - 97097A IRFB3206PbF IRFS3206PbF IRFSL3206PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G D Benefits l Improved Gate, Avalanche and Dynamic dV/dt


    Original     		PDF 7097A IRFB3206PbF IRFS3206PbF IRFSL3206PbF O-220AB O-262 EIA-418. irf 210 mosfet IRFB3206 AN-994 IRF 150a IRF 840 MOSFET irf 1040

    IRF 511 MOSfet

    Abstract: IRF5850 IRF5851 IRF5852 IRF5805PBF mosfet 23 Tsop-6
    Text: PD -95340 IRF5805PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free VDSS RDS on max ID -30V 0.098@VGS = -10V 0.165@VGS = -4.5V -3.8A Description These P-channel MOSFETs from International Rectifier


    Original     		PDF IRF5805PbF OT-23. IRF 511 MOSfet IRF5850 IRF5851 IRF5852 IRF5805PBF mosfet 23 Tsop-6

    ex 3863

    Abstract: MOSFET IRF 380 L6569A electronic ballast 18w cfl lamp L6569 1W zener diode OF SGS-THOMSON 47uf 250v CAPACITOR
    Text: L6569 L6569A HIGH VOLTAGE HALF BRIDGE DRIVER WITH OSCILLATOR PRELIMINARY DATA TECHNOLOGY: BCD ”OFF-LINE” FLOATING SUPPLY VOLTAGE UP TO 600V GND REFERRED SUPPLY VOLTAGE UP TO 18V DRIVER CURRENT CAPABILITY: - SINK CURRENT = 270mA - SOURCE CURRENT = 170mA


    Original     		PDF L6569 L6569A 270mA 170mA L6569/L6569A L6569D/L6569AD ex 3863 MOSFET IRF 380 L6569A electronic ballast 18w cfl lamp L6569 1W zener diode OF SGS-THOMSON 47uf 250v CAPACITOR

    U120

    Abstract: AN-1005
    Text: PD - 95773B IRLR024ZPbF IRLU024ZPbF HEXFET Power MOSFET Features n n n n n n n Logic Level Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 55V RDS on = 58mΩ


    Original     		PDF 95773B IRLR024ZPbF IRLU024ZPbF AN-994. U120 AN-1005

    Untitled

    Abstract: No abstract text available
    Text: SMPS MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High speed power switching l Lead-Free PD - 95075A IRFR420APbF IRFU420APbF HEXFET Power MOSFET l VDSS RDS(on) max ID 3.0Ω 3.3A 500V Benefits Low Gate Charge Qg results in Simple


    Original     		PDF 5075A IRFR420APbF IRFU420APbF IRFR420A IRFU420A 08-Mar-07

    IRF 840 MOSFET

    Abstract: U120 AN-1005 IRLU2905ZPBF
    Text: PD - 95774B IRLR2905ZPbF IRLU2905ZPbF HEXFET Power MOSFET Features l l l l l l l Logic Level Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 55V RDS on = 13.5mΩ


    Original     		PDF 95774B IRLR2905ZPbF IRLU2905ZPbF AN-994 IRF 840 MOSFET U120 AN-1005 IRLU2905ZPBF

    800w class d circuit diagram schematics

    Abstract: schematic diagram inverter 12v to 24v 1000w schematic diagram inverter 2000w SCHEMATIC WITH IR2153 1000w class d circuit diagram schematics 200w dc to ac inverter Circuit diagram AC to DC smps for plasma tv circuit diagram 12v 400W AUDIO AMPLIFIER CIRCUIT DIAGRAM schematic diagram AC to DC converter 800W IRF 9234
    Text: POWER MANAGEMENT PRODUCT SELECTION GUIDE Volume 2 THE POWER MANAGEMENT LEADER 1 THE POWER MANAGEMENT LEADER: International Rectifier is a pioneer and world leader in advanced power management technology, from digital, analog and mixed signal ICs to advanced circuit devices, power systems, and components.


    Original     		PDF

    irl3803 equivalent

    Abstract: 71A marking IRL3803 IRLI3803 irf 680 MOSFET 150 N IRF
    Text: Previous Datasheet Index Next Data Sheet PD - 9.1320A IRLI3803 PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm


    Original     		PDF IRLI3803 irl3803 equivalent 71A marking IRL3803 IRLI3803 irf 680 MOSFET 150 N IRF

    IRF (10A) 55V

    Abstract: AN-994 IRFU120 IRLR2705 IRLU2705 IRLZ34N R120 U120 3F10
    Text: PD - 95062A l l l l l l l l Logic-Level Gate Drive Ultra Low On-Resistance Surface Mount IRLR2705 Straight Lead (IRLU2705) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free IRLR2705PbF IRLU2705PbF HEXFET Power MOSFET D VDSS = 55V


    Original     		PDF 5062A IRLR2705) IRLU2705) IRLR2705PbF IRLU2705PbF O-252A O-252AA) EIA-481 EIA-541. EIA-481. IRF (10A) 55V AN-994 IRFU120 IRLR2705 IRLU2705 IRLZ34N R120 U120 3F10

    irf 249 A

    Abstract: No abstract text available
    Text: IRFW/I720A Advanced Power MOSFET FEATURES B^DSS 400 V - ♦ Avalanche Rugged Technology 1 .8 Q CO a II ♦ Lower Input Capacitance CO ^ D S o n = ♦ Rugged Gate Oxide Technology A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D2-PAK ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 400V


    OCR Scan     		PDF IRFW/I720A irf 249 A

    T4 DIODE

    Abstract: irfag52
    Text: HE 0 I 4âSS4S3 000^2=14 7 | Data Sheet No. PD-9.582A INTERNATIONAL R E C T I F I E R . T-39-13 INTERNATIONAL RECTIFIER I O R REPETITIVE AVALANCHE AND dv/dt RATED IRFAG50 HEXFET TRANSISTORS IRFAG5S N-CHANNEL 1000 Volt, 2.0 Ohm HEXFET TO-204AA TO-3 Hermetic Package


    OCR Scan     		PDF T-39-13 IRFAG50 O-204AA G-277 IRFAG50, IRFAG52 0QCH301 G-278 T4 DIODE

    1RF250

    Abstract: IRF250 motorola MOSFET IRF250 transistor irf250 irf 250 MOSFET IRF 635 SSR -25 DD
    Text: MOTOROLA SC X S T R S /R 14E D I F b 3 ti7 E 5 4 QDÔTbLi fc, | MOTOROLA •a SEM ICONDUCTOR TECHNICAL DATA IRF250 IRF251 IRF252 IRF253 Pow er Field E ffect Transìstor N-Channel Enhancem ent-M ode S ilic o n G ate T M O S These TM O S Power FETs are designed for low


    OCR Scan     		PDF IRF250 IRF251 IRF252 IRF253 IRF250, IRF252, IRF253 1RF250 IRF250 motorola MOSFET IRF250 transistor irf250 irf 250 MOSFET IRF 635 SSR -25 DD

    1rf521

    Abstract: IBF520-523 p10n10e
    Text: MOTOROLA SC XS TRS /R F IME D | b3t»725M OOfi^bflB 0 | MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRF520 IRF521 IRF522 IRF523 P o w e r Field E ffe c t T ran sisto r N-Channel Enhancem ent-M ode S ilic o n G ate T M O S These TMOS Power FETs are designed for low


    OCR Scan     		PDF IRF520 IRF521 IRF522 IRF523 IRF521, IRF523 IRF520, 1rf521 IBF520-523 p10n10e

    irf 4110

    Abstract: for IRF630 1RF631 IRF6322 MOTOROLA IRF630 MTM8N20 IRF630 IRF631 irf 1962 SS-AT9
    Text: MOTOROLA SC X S T R S /R F IME D II b3fej?554 0 0 0 ^ ^ 3 3 MOTOROLA I • SEMICONDUCTOR TECHNICAL DATA IRF630 IRF631 IRF632 P o w e r Field E ffe c t T ran sisto r N-Channel Enhancement-Mode Silicon Gate TM OS These TM O S Power FETs are designed fo r low


    OCR Scan     		PDF IRF630 IRF631 IRF632 IRF630, IRF632 irf 4110 for IRF630 1RF631 IRF6322 MOTOROLA IRF630 MTM8N20 irf 1962 SS-AT9

    1RF350

    Abstract: Transistor IRF 044 IRF3503 TRANSISTOR 2SC 635 08/bup 3110 transistor
    Text: MOTOROLA SC I X S T R S /R F IM E D • MOTOROLA 005^75 ■i SEM ICONDUCTOR I 1 j IRF350 IRF351 IRF352 TECHNICAL DATA Part Number Voss 'DS on N-CHANNEL ENHANCEMENT-MODE SILICON GATE TM O S POWER FIELD EFFECT TRANSISTOR IRF350 400 V 0.3 a IRF351 350 V 0.3 n


    OCR Scan     		PDF IRF350 IRF351 IRF352 JRF350, 1RF350, 1RF352 IRF350, JRF351 1RF350 Transistor IRF 044 IRF3503 TRANSISTOR 2SC 635 08/bup 3110 transistor