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    POWER MOSFET INVERTER Search Results

    POWER MOSFET INVERTER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    POWER MOSFET INVERTER Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: APTMC60TLM55CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 49mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •


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    APTMC60TLM55CT3AG PDF

    Untitled

    Abstract: No abstract text available
    Text: APTMC60TL11CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 110mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •


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    APTMC60TL11CT3AG PDF

    800V 40A mosfet

    Abstract: mosfet 1200V 40A MOSFET 40A 600V APTMC60TLM55CT3AG
    Text: APTMC60TLM55CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 55mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •


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    APTMC60TLM55CT3AG 800V 40A mosfet mosfet 1200V 40A MOSFET 40A 600V APTMC60TLM55CT3AG PDF

    Untitled

    Abstract: No abstract text available
    Text: APTMC60TL11CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 98mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •


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    APTMC60TL11CT3AG PDF

    Untitled

    Abstract: No abstract text available
    Text: APTMC60TLM20CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 20mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •


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    APTMC60TLM20CT3AG PDF

    Untitled

    Abstract: No abstract text available
    Text: APTMC60TLM20CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 17mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •


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    APTMC60TLM20CT3AG PDF

    SiC POWER MOSFET

    Abstract: sic MOSFET APTMC60TLM14CAG
    Text: APTMC60TLM14CAG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 14mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • SiC Schottky Diode


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    APTMC60TLM14CAG SiC POWER MOSFET sic MOSFET APTMC60TLM14CAG PDF

    Untitled

    Abstract: No abstract text available
    Text: APTMC60TLM14CAG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 13mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • SiC Schottky Diode


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    APTMC60TLM14CAG PDF

    Untitled

    Abstract: No abstract text available
    Text: APTMC60TLM14CAG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 13mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • SiC Schottky Diode


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    APTMC60TLM14CAG PDF

    Power MOSFET, toshiba

    Abstract: 4502 mosfet 2sk3561 HIGH POWER MOSFET TOSHIBA 2SK3568 2sk3562 2SK2842 2SK3742 2SK3567 equivalent 2SK3567
    Text: Power MOSFET Power MOSFETs - Middle & High Voltage Series VDSS≥100V - Aug. 2003 Toshiba Corporation Semiconductor Company DP0530019_01 Copyright 2003 Toshiba Corporation. All rights reserved. 1 Power MOSFET Middle & High Voltage Power MOSFET 1) π-MOS (Trench Gate Power MOSFET) series


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    VDSS100V) DP0530019 O-220SIS Power MOSFET, toshiba 4502 mosfet 2sk3561 HIGH POWER MOSFET TOSHIBA 2SK3568 2sk3562 2SK2842 2SK3742 2SK3567 equivalent 2SK3567 PDF

    2N7225U

    Abstract: SMD1P IRFN250 JANTX2N7225U JANTXV2N7225U mosfet ir 250 n 2n7225
    Text: PD-91549B IRFN250 JANTX2N7225U HEXFET POWER MOSFET JANTXV2N7225U [REF:MIL-PRF-19500/592] N - CHANNEL Ω MOSFET 200 Volt, 0.100Ω HEXFET® power MOSFET technology is the key to InternationalRectifier’s advanced line of power MOSFET transistors. The efficient geometry


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    PD-91549B IRFN250 JANTX2N7225U JANTXV2N7225U MIL-PRF-19500/592] 2N7225U SMD1P IRFN250 JANTX2N7225U JANTXV2N7225U mosfet ir 250 n 2n7225 PDF

    2n7224U

    Abstract: IRFN150 JANTX2N7224U JANTXV2N7224U
    Text: PD-91547B IRFN150 JANTX2N7224U JANTXV2N7224U HEXFET POWER MOSFET [REF:MIL-PRF-19500/592] N - CHANNEL Ω MOSFET 100Volt, 0.070Ω HEXFET® power MOSFET technology is the key to InternationalRectifier’s advanced line of power MOSFET transistors. The efficient geometry


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    PD-91547B IRFN150 JANTX2N7224U JANTXV2N7224U MIL-PRF-19500/592] 100Volt, 2n7224U IRFN150 JANTX2N7224U JANTXV2N7224U PDF

    mosfet 1200V

    Abstract: cmf20120 SiC MOSFET Cree SiC MOSFET DMOSFET CMF20120D IXDI414 DMOS SiC JEDEC24 RB160M-60
    Text: CMF20120D-Silicon Carbide Power MOSFET 1200V 80 mΩ Z-FET MOSFET Rev. CMF20120D N-Channel Enhancement Mode Subject to change without notice. www.cree.com/power 1 CMF20120D-Silicon Carbide Power MOSFET Z-FET™ MOSFET N-Channel Enhancement Mode VDS = 1200 V


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    CMF20120D-Silicon CMF20120D O-247-3 CMF20120D mosfet 1200V cmf20120 SiC MOSFET Cree SiC MOSFET DMOSFET IXDI414 DMOS SiC JEDEC24 RB160M-60 PDF

    SMD1P

    Abstract: 2N7222U IRFN440 JANTX2N7222U JANTXV2N7222U irfn44
    Text: PD-91552B IRFN440 JANTX2N7222U JANTXV2N7222U HEXFET POWER MOSFET [REF:MIL-PRF-19500/596] N - CHANNEL Ω MOSFET 500 Volt, 0.85Ω Product Summary HEXFET® power MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry


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    PD-91552B IRFN440 JANTX2N7222U JANTXV2N7222U MIL-PRF-19500/596] SMD1P 2N7222U IRFN440 JANTX2N7222U JANTXV2N7222U irfn44 PDF

    CMF20120D

    Abstract: JEDEC24 mosfet 1200V RB160M 6N137 IXDI414 RB160M-60 DMOS SiC electronic transformer halogen 12v MOSFET 800V 10A
    Text: CMF20120D-Silicon Carbide Power MOSFET 1200V 80 mΩ Z-FeTTM MOSFET Rev. A CMF20120D N-Channel Enhancement Mode Subject to change without notice. www.cree.com/power 1 CMF20120D-Silicon Carbide Power MOSFET Z-FeTTM MOSFET VDS = 1200 V RDS on = 80 mΩ N-Channel Enhancement Mode


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    CMF20120D-Silicon CMF20120D O-247-3 CMF20120D JEDEC24 mosfet 1200V RB160M 6N137 IXDI414 RB160M-60 DMOS SiC electronic transformer halogen 12v MOSFET 800V 10A PDF

    IRF 640 mosfet

    Abstract: IRFP17N50L
    Text: APPROVED IRFP17N50L SMPS MOSFET Applications l l l l Switch Mode Power Supply SMPS Uninterruptible Power Supply High Speed Power Switching ZVS and High Frequency Circuit PWM Inverters l VDSS HEXFET Power MOSFET RDS(on) typ. ID 0.28Ω 16A 500V Benefits


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    IRFP17N50L O-247AC IRF 640 mosfet IRFP17N50L PDF

    Untitled

    Abstract: No abstract text available
    Text: APPROVED PD - TBD IRFP17N50L SMPS MOSFET HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS Zero Voltage Switching (ZVS) and High Frequency Circuit Uninterruptible Power Supply High Speed Power Switching PWM Inverters l l l l VDSS 500V RDS(on) typ.


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    IRFP17N50L 170ns O-247AC PDF

    IRFP17N50L

    Abstract: No abstract text available
    Text: PD - 94322 IRFP17N50L SMPS MOSFET HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS Zero Voltage Switching (ZVS) and High Frequency Circuit Uninterruptible Power Supply High Speed Power Switching PWM Inverters l l l l VDSS 500V RDS(on) typ.


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    IRFP17N50L 170ns O-247AC IRFP17N50L PDF

    2SK1276

    Abstract: No abstract text available
    Text: 2SK1276A FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET F- V SERIES Outline Drawings Features TO-3P Include fast recovery diode High voltage Low driving power Applications Motor controllers Inverters Choppers 3. Source JEDEC EIAJ Maximum ratings and characteristics


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    2SK1276A SC-65 2SK1276 PDF

    2SK1280

    Abstract: No abstract text available
    Text: 2SK1280 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET F- V SERIES Outline Drawings Features Include fast recovery diode High voltage Low driving power TO-3P Applications Motor controllers Inverters Choppers 3. Source JEDEC EIAJ Maximum ratings and characteristics


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    2SK1280 SC-65 2SK1280 PDF

    2SK1277

    Abstract: SC-65
    Text: 2SK1277 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET F- V SERIES Outline Drawings Features Include fast recovery diode High voltage Low driving power TO-3P Applications Motor controllers Inverters Choppers 3. Source JEDEC EIAJ Maximum ratings and characteristics


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    2SK1277 SC-65 2SK1277 SC-65 PDF

    IRF igbt gate driver

    Abstract: MOSFET IRF 630 SMD-247 st smd diode marking code ET MOSFET IRF 630 Datasheet MOSFET IRF 570 MOSFET IRF 603
    Text: PD - 94351 IRFP17N50LS SMPS MOSFET HEXFET Power MOSFET Applications l l l l Switch Mode Power Supply SMPS Uninterruptible Power Supply High Speed Power Switching ZVS and High Frequency Circuit PWM Inverters l VDSS RDS(on) typ. Trr ID 500V 0.28Ω 170ns


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    IRFP17N50LS 170ns SMD-247 O-247AC. SMD-247 P450S IRFP450S IRF igbt gate driver MOSFET IRF 630 st smd diode marking code ET MOSFET IRF 630 Datasheet MOSFET IRF 570 MOSFET IRF 603 PDF

    7912A

    Abstract: irfp31n50 IRFP31N50L 152x 247Package
    Text: PD - 94081 SMPS MOSFET IRFP31N50L Applications HEXFET Power MOSFET l Switch Mode Power Supply SMPS l UninterruptIble Power Supply VDSS RDS(on) typ. ID l High Speed Power Switching 500V 0.15Ω 31A l ZVS and High Frequency Circuit l PWM Inverters Benefits


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    IRFP31N50L O-247AC 7912A irfp31n50 IRFP31N50L 152x 247Package PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 95123 IRFB17N50LPbF SMPS MOSFET Applications Switch Mode Power Supply SMPS Uninterruptible Power Supply High Speed Power Switching ZVS and High Frequency Circuit PWM Inverters Lead-Free l l l l l l VDSS HEXFET Power MOSFET RDS(on) typ. ID 0.28Ω


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    IRFB17N50LPbF O-220AB O-220AB PDF