Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    POWER MOSFET 600V 29A Search Results

    POWER MOSFET 600V 29A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation

    POWER MOSFET 600V 29A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    TO-274

    Abstract: IRFPS29N60L IRFPS37N50A
    Text: PD - 94622 SMPS MOSFET IRFPS29N60L HEXFET Power MOSFET Applications • Zero Voltage Switching SMPS VDSS RDS on typ. Trr typ. ID • Telecom and Server Power Supplies • Uninterruptible Power Supplies 175mΩ 600V 130ns 29A • Motor Control applications


    Original
    IRFPS29N60L 130ns Super-247TM O-274AA IRFPS37N50A IRFPS37N50A O-247TM TO-274 IRFPS29N60L PDF

    ISD 1820

    Abstract: IRF 544 IRF 547 MOSFET MOSFET IRF 630 Datasheet IRFPS29N60L IRFPS37N50A
    Text: PD - 94622A SMPS MOSFET IRFPS29N60L HEXFET Power MOSFET Applications • Zero Voltage Switching SMPS VDSS RDS on typ. Trr typ. ID • Telecom and Server Power Supplies • Uninterruptible Power Supplies 175mΩ 600V 130ns 29A • Motor Control applications


    Original
    4622A IRFPS29N60L 130ns Super-247TM O-274AA IRFPS37N50A IRFPS37N50A O-247TM ISD 1820 IRF 544 IRF 547 MOSFET MOSFET IRF 630 Datasheet IRFPS29N60L PDF

    ISD 1820

    Abstract: power mosfet 600v 29a IRFPS29N60L IRFPS37N50A
    Text: PD - 94622A SMPS MOSFET IRFPS29N60L HEXFET Power MOSFET Applications • Zero Voltage Switching SMPS VDSS RDS on typ. Trr typ. ID • Telecom and Server Power Supplies • Uninterruptible Power Supplies 175mΩ 600V 130ns 29A • Motor Control applications


    Original
    4622A IRFPS29N60L 130ns Super-247TM 12-Mar-07 ISD 1820 power mosfet 600v 29a IRFPS29N60L IRFPS37N50A PDF

    APT-6021

    Abstract: APT6021BLL APT6021SLL max3470
    Text: APT6021BLL APT6021SLL 600V 29A 0.210Ω R POWER MOS 7 MOSFET BLL D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original
    APT6021BLL APT6021SLL O-247 O-247 APT-6021 APT6021BLL APT6021SLL max3470 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT6021BLL APT6021SLL 600V 29A 0.210Ω POWER MOS 7 R MOSFET BLL D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original
    APT6021BLL APT6021SLL O-247 O-247 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT6021BLL APT6021SLL 600V 29A 0.210Ω R POWER MOS 7 MOSFET BLL D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original
    APT6021BLL APT6021SLL O-247 O-247 PDF

    power mosfet 600v 29a

    Abstract: No abstract text available
    Text: APT60M75JLL 600V 58A 0.075Ω POWER MOS 7 R MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original
    APT60M75JLL OT-227 power mosfet 600v 29a PDF

    Untitled

    Abstract: No abstract text available
    Text: APT60M75JLL 600V 58A 0.075Ω POWER MOS 7 R MOSFET S S Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original
    APT60M75JLL OT-227 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT60M75JLL 600V 58A 0.075Ω POWER MOS 7 R MOSFET S S 27 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original
    APT60M75JLL PDF

    2kW flyback PFC

    Abstract: transistor SMD DK -RN SMPS flyback 2kW UPS SIEMENS UMAX 450W SMPS smps 450W 2kw mosfet PFC 5kw P-CHANNEL 25A TO-247 POWER MOSFET siemens soft starter
    Text: Semiconductor Group – find us at an office near you AUS Siemens Ltd., Head Office 544 Church Street Richmond Melbourne , Vic. 3121 ట (+61) 3-9420 7111 Fax (+61) 3-9420 72 75 Email: mark.walsh@siemens.com.au D Siemens AG Von-der-Tann-Straße 30 D-90439 Nürnberg


    Original
    D-90439 D-70499 D-81679 B-1060 N60S5 O-220 OT-223 2kW flyback PFC transistor SMD DK -RN SMPS flyback 2kW UPS SIEMENS UMAX 450W SMPS smps 450W 2kw mosfet PFC 5kw P-CHANNEL 25A TO-247 POWER MOSFET siemens soft starter PDF

    Untitled

    Abstract: No abstract text available
    Text: APT28M120B2 APT28M120L 1200V, 29A, 0.53Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure


    Original
    APT28M120B2 APT28M120L O-264 O-247 PDF

    APT28M120B2

    Abstract: APT28M120L MIC4452
    Text: APT28M120B2 APT28M120L 1200V, 29A, 0.53Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure


    Original
    APT28M120B2 APT28M120L O-264 O-247 APT28M120B2 APT28M120L MIC4452 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT28M120B2 APT28M120L 1200V, 29A, 0.53Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure


    Original
    APT28M120B2 APT28M120L O-264 O-247 PDF

    220VAC DC transformerless power supply

    Abstract: DN2540 equivalent PN2907 equivalent 220VAC DC transformerless power supply 3A capacitor wima mks 4 0.1uF GI BYV26C 350mA 220vac driver wima m2 MKS wima micrometals t60-2
    Text: HV9906DB7 HV9906DB7 20W 220VAC Off-Line PFC Current Source Controller Introduction Features The Supertex HV9906DB7 demo board is a power factor corrected PFC LED driver using the HV9906 IC. The power conversion topology comprises an input buck-boost stage with an integrated energy


    Original
    HV9906DB7 220VAC HV9906DB7 HV9906 1N4148 STP8NM60 HV9906P 220VAC DC transformerless power supply DN2540 equivalent PN2907 equivalent 220VAC DC transformerless power supply 3A capacitor wima mks 4 0.1uF GI BYV26C 350mA 220vac driver wima m2 MKS wima micrometals t60-2 PDF

    ir2111 application note

    Abstract: IR2111 APPLICATIONS IR2111 application IR2111 IRFPC50 IR2111S IRFBC20 IRFBC30 IRFBC40 MS-012AA
    Text: Data Sheet No. PD60028-L IR2111 S HALF-BRIDGE DRIVER Features • Floating channel designed for bootstrap operation • • • • • • Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V


    Original
    PD60028-L IR2111 5M-1994. MS-012AA. MS-012AA) ir2111 application note IR2111 APPLICATIONS application IR2111 IRFPC50 IR2111S IRFBC20 IRFBC30 IRFBC40 MS-012AA PDF

    IR2111

    Abstract: No abstract text available
    Text: Data Sheet No. PD60028-M IR2111 S & (PbF) HALF-BRIDGE DRIVER Features • Floating channel designed for bootstrap operation • • • • • • • Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V


    Original
    PD60028-M IR2111 IR2111 IR2111S IR2111S IR2111PbF PDF

    IR2111 APPLICATIONS

    Abstract: application IR2111 ir2111 application note IR2111 IR2111S IRFBC20 IRFBC30 IRFBC40 IRFPC50 MS-012AA
    Text: Data Sheet No. PD60028-K IR2111 HALF-BRIDGE DRIVER Features • Floating channel designed for bootstrap operation • • • • • • Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V


    Original
    PD60028-K IR2111 IR2111 5M-1994. MS-012AA. MS-012AA) IR2111 APPLICATIONS application IR2111 ir2111 application note IR2111S IRFBC20 IRFBC30 IRFBC40 IRFPC50 MS-012AA PDF

    ir2111

    Abstract: Gate Driver application IR2111 IR2111 APPLICATIONS ir2111 application note IR2111 "pin compatible" ir2111pbf IR2111S P channel 600v 30a IGBT IRFPC50
    Text: Data Sheet No. PD60028-M IR2111 S & (PbF) HALF-BRIDGE DRIVER Features • Floating channel designed for bootstrap operation • • • • • • • Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V


    Original
    PD60028-M IR2111 IR2111 IR2111S IR2111S IR2111PbF Gate Driver application IR2111 IR2111 APPLICATIONS ir2111 application note IR2111 "pin compatible" ir2111pbf P channel 600v 30a IGBT IRFPC50 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 95907 SMPS MOSFET IRFPS29N60LPbF HEXFET Power MOSFET Applications • Zero Voltage Switching SMPS • Telecom and Server Power Supplies • Uninterruptible Power Supplies • Motor Control applications • Lead-Free VDSS RDS on typ. Trr typ. ID 175mΩ


    Original
    IRFPS29N60LPbF 130ns Super-247â 08-Mar-07 PDF

    ISD 1820

    Abstract: power mosfet 600v 29a ISD 1820 P IRFPS37N50A
    Text: PD - 95907 SMPS MOSFET IRFPS29N60LPbF HEXFET Power MOSFET Applications • Zero Voltage Switching SMPS • Telecom and Server Power Supplies • Uninterruptible Power Supplies • Motor Control applications • Lead-Free VDSS RDS on typ. Trr typ. ID 175mΩ


    Original
    IRFPS29N60LPbF 130ns Super-247TM 12-Mar-07 ISD 1820 power mosfet 600v 29a ISD 1820 P IRFPS37N50A PDF

    IR2127

    Abstract: ir21281 PD60143K
    Text: Data Sheet No. PD60143K IR2127/IR2128 IR21271/IR21281 CURRENT SENSING SINGLE CHANNEL DRIVER Features Product Summary • Floating channel designed for bootstrap operation • Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Application- specific gate drive range:


    Original
    PD60143K IR2127/IR2128 IR21271/IR21281 IR2127/IR2128) IR21271/IR21281) IR2127/IR21271) IR2128/IR21281) IR2127/IR2128/IR21271/IR21281 IR2127 ir21281 PD60143K PDF

    IR2127

    Abstract: IR21271 IR2128 IR2128S MS-012AA
    Text: Data Sheet No. PD60143-M IR2127 S / IR2128(S) IR21271(S) CURRENT SENSING SINGLE CHANNEL DRIVER Features • Floating channel designed for bootstrap operation • • • • • • Fully operational to +600V Tolerant to negative transient voltage dV/dt immune


    Original
    PD60143-M IR2127 IR2128 IR21271 IR2127/IR2128) IR21271) IR2127/IR21271) IR2128) IR2128S MS-012AA PDF

    IR21271

    Abstract: IR2127 12A, 600V Current Sensing N-Channel IGBT IR2128 IR2128S MS-012AA AX300
    Text: Data Sheet No. PD60143-L IR2127/IR2128 IR21271 CURRENT SENSING SINGLE CHANNEL DRIVER Features • Floating channel designed for bootstrap operation • Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Application- specific gate drive range:


    Original
    PD60143-L IR2127/IR2128 IR21271 IR2127/IR2128) IR21271) IR2127/IR21271) IR2128) IR2127 IR21271 12A, 600V Current Sensing N-Channel IGBT IR2128 IR2128S MS-012AA AX300 PDF

    LG direct drive motor

    Abstract: 600v 20 amp mosfet transistor tl 11C mosfet
    Text: m jg m J T f 50 AMP, 600 VOLT IGBT PLUS DIODE HALF BRIDGE POWER HYBRID 4f\* a 4 1 U 1 M.S. K EN N ED Y CORP. 315 699-9201 0170 Thompson Road •Cicero, N.Y. 13039 FEATURES: 600V, 50 Amp Capability Ultra Low Thermal Resistance - Junction to Case - 0.21 °C/W


    OCR Scan
    4101B MII-H-38534 LG direct drive motor 600v 20 amp mosfet transistor tl 11C mosfet PDF