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    POWER MOSFET 50N06 Search Results

    POWER MOSFET 50N06 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    POWER MOSFET 50N06 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    9n90c

    Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
    Text: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W


    Original     		PDF 2N7000 2N7000A 2N7000K 70Max 45Max 55Max 80Max 9n90c 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS

    55NF06

    Abstract: P55NF06 P55nf*06 Mosfet P55NF06
    Text: 55NF06 Pb Free Plating Product 55NF06 Pb N-CHANNEL POWER MOSFET TRANSISTOR 50 AMPERE 60 VOLT N-CHANNEL POWER MOSFET „ 12 DESCRIPTION Thinkisemi 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low


    Original     		PDF 55NF06 50N06 U55NF06 P55NF06 F55NF06 D55NF06 O-220/TO-220F 55NF06 P55NF06 P55nf*06 Mosfet P55NF06

    Equivalent 50N06

    Abstract: MOSFET 50N06 50n06 TO-252 50n06 50N06L 60V 2A MOSFET N-channel 50N06LT 50N06 DATASHEET mosfet driver L038
    Text: UNISONIC TECHNOLOGIES CO., LTD 50N06 Power MOSFET 50 Amps, 60 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max


    Original     		PDF 50N06 50N06 QW-R502-088 Equivalent 50N06 MOSFET 50N06 TO-252 50n06 50N06L 60V 2A MOSFET N-channel 50N06LT 50N06 DATASHEET mosfet driver L038

    50N06 to 252

    Abstract: MOSFET 50N06 50n06l 50N06 50N06 E 50N60L-TM3-T 50n06 to-252 50N06L-TF3-T 50N60G-TM3-T power MOSFET 50n06
    Text: UNISONIC TECHNOLOGIES CO., LTD 50N06 Power MOSFET 50 Amps, 60 Volts N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max


    Original     		PDF 50N06 O-252 50N06 O-251 O-220 O-220F QW-R502-088 50N06 to 252 MOSFET 50N06 50n06l 50N06 E 50N60L-TM3-T 50n06 to-252 50N06L-TF3-T 50N60G-TM3-T power MOSFET 50n06

    50n06

    Abstract: MOSFET 50N06 Equivalent 50N06 50N06 DATASHEET p 50n06 power MOSFET 50n06 50N06-TF3-T 50N06LT TO-220 50n06 25V 1A power MOSFET TO-220
    Text: UNISONIC TECHNOLOGIES CO., LTD 50N06 Power MOSFET 50 Amps, 60 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max


    Original     		PDF 50N06 50N06 50N06L QW-R502-088 MOSFET 50N06 Equivalent 50N06 50N06 DATASHEET p 50n06 power MOSFET 50n06 50N06-TF3-T 50N06LT TO-220 50n06 25V 1A power MOSFET TO-220

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 50N06-F Preliminary Power MOSFET 50 Amps, 60 Volts N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 50N06-F is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max


    Original     		PDF 50N06-F 50N06-F 50N06L-TN3-R 50N06G-TNat QW-R502-A83

    mosfet 50a 25v to 252

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 50N06 Power MOSFET 50 Amps, 60 Volts N-CHANNEL POWER MOSFET 1 TO-263  DESCRIPTION The UTC 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max


    Original     		PDF 50N06 O-263 50N06 O-251 O-220 O-220F QW-R502-088 mosfet 50a 25v to 252

    50N60

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 50N06 Power MOSFET 50 Amps, 60 Volts N-CHANNEL POWER MOSFET 1 1  DESCRIPTION TO-263 The UTC 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max


    Original     		PDF 50N06 O-263 50N06 O-220 O-251 O-220F QW-R502-088 50N60

    50n06

    Abstract: MOSFET 50N06 50N06 to 252
    Text: UNISONIC TECHNOLOGIES CO., LTD 50N06 Power MOSFET 50 Amps, 60 Volts N-CHANNEL POWER MOSFET 1 1  DESCRIPTION TO-263 The UTC 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max


    Original     		PDF 50N06 O-263 50N06 O-220 O-220F O-220F3 O-251 O-252 O-252D QW-R502-088 MOSFET 50N06 50N06 to 252

    a50n06

    Abstract: 50n06 MOSFET 50N06 50N06LT Equivalent 50N06 50N06 DATASHEET 50N06L power MOSFET 50n06 50N06-TF3-T p 50n06
    Text: UNISONIC TECHNOLOGIES CO., LTD 50N06 MOSFET 50 Amps, 60 Volts N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-220 The UTC 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max


    Original     		PDF 50N06 O-220 50N06 O-220F 50N06L QW-R502-088 a50n06 MOSFET 50N06 50N06LT Equivalent 50N06 50N06 DATASHEET 50N06L power MOSFET 50n06 50N06-TF3-T p 50n06

    50n06

    Abstract: MOSFET 50N06 p 50n06 50N06 E C445E3 MTN50N06E3
    Text: CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTN50N06E3 Spec. No. : C445E3 Issued Date : 2009.05.12 Revised Date : Page No. : 1/8 BVDSS 60V RDSON MAX 22 mΩ ID 50A Description The MTN50N06E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best


    Original     		PDF MTN50N06E3 C445E3 MTN50N06E3 O-220 O-220 UL94V-0 50n06 MOSFET 50N06 p 50n06 50N06 E C445E3

    50N06

    Abstract: MOSFET 50N06 50N06 DATASHEET 50N06 E 50N06 E DATASHEET
    Text: E 50N06 HEXFET Dynamic dv/dt Rating 175 ْC Operating Temperature Fast switching Ease of Paralleling Simple Drive Requirements Power MOSFET VDSS = 60V ID25 = 50A RDS ON = 0.022Ω Description Third Generation HEXFETs from International Rectifier provide the designer


    Original     		PDF 50N06 O-220 50watts. 25IAS ISD51A di/dt250A/S TJ175 width300S; 50N06 MOSFET 50N06 50N06 DATASHEET 50N06 E 50N06 E DATASHEET

    Equivalent 50N06

    Abstract: MOSFET 50N06 50N06 50n06 similar schematic diagram converter 12v to 24v 70N03 AN9664 HIP6002 HIP6003 MBR1535CT
    Text: A Pentium Pro Voltage Regulator Module VRM Using the HIP6003 PWM Controller Application Note December 1996 AN9664 Introduction HIP6003EVAL1 Reference Design Today’s high-performance microprocessors, such as the Intel Pentium Pro, present many challenges to their power


    Original     		PDF HIP6003 AN9664 HIP6003EVAL1 Equivalent 50N06 MOSFET 50N06 50N06 50n06 similar schematic diagram converter 12v to 24v 70N03 AN9664 HIP6002 MBR1535CT

    MOSFET 50N06

    Abstract: Equivalent 50N06 rfp50n06 equivalent 50N06 equivalent 1N4148 DL-35 50N06 DATASHEET 50N06 floating mosfet driver rfp50n06 substitute AN9664
    Text: Harris Semiconductor No. AN9664 Harris Intelligent Power December 1996 A Pentium Pro Voltage Regulator Module VRM Using the HIP6003 PWM Controller (HIP6003EVAL1) Author: Greg J. Miller Introduction HIP6003EVAL1 Reference Design Today’s high-performance microprocessors, such as the


    Original     		PDF AN9664 HIP6003 HIP6003EVAL1) HIP6003EVAL1 1-800-4-HARRIS MOSFET 50N06 Equivalent 50N06 rfp50n06 equivalent 50N06 equivalent 1N4148 DL-35 50N06 DATASHEET 50N06 floating mosfet driver rfp50n06 substitute AN9664

    optimos battery protection reverse

    Abstract: 80N03s smd K 739 mosfet 50N03 80n06s2-09 25N06 50n03s2-07 817 CN 100P03P3L-04 TO-263-7 Package
    Text: 21/9/04 15.23 Página 2 Product Information 2004 INFINEON TECHNOLOGIES Automotive MOSFET Green and Robust Package I N O R D E R T O cope with the new RoHS Restricting the use of Hazardous Automotive MOSFET Substances and WEEE (Waste Electronic and Electrical Equipment) regulations the


    Original     		PDF FIN-02601 100P03P3L-04 P-TO220-3 P-TO262-3 P-TO252-3 P-TO263-3 O-263-7) P-TO263-7 P-TO220-7 optimos battery protection reverse 80N03s smd K 739 mosfet 50N03 80n06s2-09 25N06 50n03s2-07 817 CN 100P03P3L-04 TO-263-7 Package

    MOSFET 50N06

    Abstract: Equivalent 50N06 rfp50n06 equivalent p 50n06 capacitor ceramic 33pF 50n06 70N03 schematic diagram converter input 24v to 12v 12V DC to 24V dC converter schematic diagram 50n06 similar
    Text: Harris Semiconductor No. AN9664 Harris Intelligent Power December 1996 A Pentium Pro Voltage Regulator Module VRM Using the HIP6003 PWM Controller (HIP6003EVAL1) Author: Greg J. Miller Introduction HIP6003EVAL1 Reference Design Today’s high-performance microprocessors, such as the


    Original     		PDF AN9664 HIP6003 HIP6003EVAL1) 1000pF, 51015A 576802B04000 SOIC-16 O-220 DL-35 MOSFET 50N06 Equivalent 50N06 rfp50n06 equivalent p 50n06 capacitor ceramic 33pF 50n06 70N03 schematic diagram converter input 24v to 12v 12V DC to 24V dC converter schematic diagram 50n06 similar

    50n03s2-07

    Abstract: 50N03 MOSFET having TO-252 PAckage APPS071E TO252-3 rthjc copper bond wire infineon SPP100N04S2L03 100n04s2l-03 50N06 50N03S2L-06
    Text: Application Note, V 1.0, June 2002 APPS071E  OptiMOS PowerBondä by Jean-Philippe Boeschlin Automotive Power Never stop -1- thinking. APPS071E OptiMOS  PowerBondä Powerbond II II Powerbond 1. Abstract Powerbond II Powerbond This Application Note introduces Infineon


    Original     		PDF APPS071E 50n03s2-07 50N03 MOSFET having TO-252 PAckage APPS071E TO252-3 rthjc copper bond wire infineon SPP100N04S2L03 100n04s2l-03 50N06 50N03S2L-06

    TLE7201

    Abstract: BTS426L2 TLE 6289 xc 7270 TRANSISTOR SMD K27 BTS7960B TLE6289GP BSP 452-T bts5241l ISO11519
    Text: Automotive Power Selection Guide Ultimate POWER – Perfect Control CO M P L E T E A u t o m o t i v e S o l u t i o ns f r o m I n f i n e o n www.infineon.com/power Never stop thinking. Introduction Power and Control – a Successful Combination D O Y O U N E E D to control more power? With increasing accuracy? Do


    Original     		PDF B112-H6731-G12-X-7600 TLE7201 BTS426L2 TLE 6289 xc 7270 TRANSISTOR SMD K27 BTS7960B TLE6289GP BSP 452-T bts5241l ISO11519

    toy helicopter remote control circuit diagram

    Abstract: TDA 2377 nokia bts str z 4267 rc helicopter circuit diagram PG-TO252-5-11 footprint nokia 5230 hardware TDA 2525 Campus Italia Vol 1 how to make rc helicopter
    Text: Infineon Solutions for Transportation 24 V, Leisure Vehicles and Small Electrical Carts [ www.infineon.com ] 2 Contents Introduction 04 Application Segments 06 Trucks 08 Leisure Vehicles 10 Electrical Vehicles 12 Products Microcontrollers 14 Automotive Power


    Original     		PDF B192-H9213-X-X-7600 toy helicopter remote control circuit diagram TDA 2377 nokia bts str z 4267 rc helicopter circuit diagram PG-TO252-5-11 footprint nokia 5230 hardware TDA 2525 Campus Italia Vol 1 how to make rc helicopter

    bts 2106

    Abstract: bts 425 l1 80N04 BTS 5155 BTS 2146 Tekelec TA BTS 3012 BTS 240-A SIEMENS tle 420 CA 5210 PL
    Text: T E M P F E T , H I T F E T ®, P R O F E T ®, T R I L I T H I C ®, O p t i M O S Ultimate POWER needs PERFECT Control Smart Power Switches and Bridges www.infineon.com Never stop thinking. Improve your System and Replace the Relays with Infineon SMART POWER SWITCHES and


    Original     		PDF B112-H6731-G8-X-7600 bts 2106 bts 425 l1 80N04 BTS 5155 BTS 2146 Tekelec TA BTS 3012 BTS 240-A SIEMENS tle 420 CA 5210 PL

    fp50n06

    Abstract: c 4072 TA49164 F50N06LE FG50N06L FP50N06L RF1S50N06LESM RF1S50N06LESM9A RFG50N06LE RFP50N06LE
    Text: RFG50N06LE, RFP50N06LE, RF1S50N06LESM Data Sheet October 1999 50A, 60V, 0.022 Ohm, Logic Level N-Channel Power MOSFETs File Number 4072.3 Features • 50A, 60V These N-Channel enhancement mode power MOSFETs are manufactured using the latest manufacturing process


    Original     		PDF RFG50N06LE, RFP50N06LE, RF1S50N06LESM fp50n06 c 4072 TA49164 F50N06LE FG50N06L FP50N06L RF1S50N06LESM RF1S50N06LESM9A RFG50N06LE RFP50N06LE

    50n06l

    Abstract: No abstract text available
    Text: RFG50N06LE, RFP50N06LE, RF1S50N06LESM Semiconductor Data Sheet April 1999 50A, 60V, 0.022 Ohm, ESD Rated, Logic Level N-Channel Power MOSFETs 4072.2 Features • 50A, 60V These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature


    Original     		PDF RFG50N06LE, RFP50N06LE, RF1S50N06LESM TA49164. Cu94e-5) 50e-4 53e-6) 54e-3 21e-6) 50n06l

    fp50n06

    Abstract: 50n06l 50N06LE F50N06LE FG50N06L FP50N06L RF1S50N06LESM RF1S50N06LESM9A RFG50N06LE RFP50N06LE
    Text: RFG50N06LE, RFP50N06LE, RF1S50N06LESM Data Sheet Title FG5 06L P50 6LE 1S5 06L M bt A, V, 22 m, gic vel anwer OSTs) utho October 1999 50A, 60V, 0.022 Ohm, Logic Level N-Channel Power MOSFETs Features These N-Channel enhancement mode power MOSFETs are manufactured using the latest manufacturing process


    Original     		PDF RFG50N06LE, RFP50N06LE, RF1S50N06LESM fp50n06 50n06l 50N06LE F50N06LE FG50N06L FP50N06L RF1S50N06LESM RF1S50N06LESM9A RFG50N06LE RFP50N06LE

    50N06LE

    Abstract: No abstract text available
    Text: J W S S em icon du cto r RFG50N06LE, RFP50N06LE, RF1S50N06LESM I April 1999 Data Sheet 50A, 60V, 0.022 Ohm, ESD Rated, Logic Level N-Channel Power MOSFETs Features • 50A,60V These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature


    OCR Scan     		PDF RFG50N06LE, RFP50N06LE, RF1S50N06LESM TA49164. 022i2 50e-4 53e-6) 54e-3 21e-6) 50N06LE