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    POWER MOSFET 220 V 1A Search Results

    POWER MOSFET 220 V 1A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    POWER MOSFET 220 V 1A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TO 220 Package High current N CHANNEL MOSFET

    Abstract: TSM7N65 MOSFET 50V 100A TO-220 ENHANCEMENT MOSFET pin diagram of MOSFET "MARKING DIAGRAM" 25V 1A power MOSFET TO-220 circuit diagram of mosfet based power supply N-CHANNEL ENHANCEMENT MODE POWER MOSFET n-channel mosfet transistor
    Text: TSM7N65 650V N-Channel Power MOSFET ITO-220 TO-220 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS V RDS(on)(Ω) ID (A) 650 1.2 @ VGS =10V 3 General Description The TSM7N65 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.


    Original     		PDF TSM7N65 ITO-220 O-220 TSM7N65 TO 220 Package High current N CHANNEL MOSFET MOSFET 50V 100A TO-220 ENHANCEMENT MOSFET pin diagram of MOSFET "MARKING DIAGRAM" 25V 1A power MOSFET TO-220 circuit diagram of mosfet based power supply N-CHANNEL ENHANCEMENT MODE POWER MOSFET n-channel mosfet transistor

    6A 650V MOSFET

    Abstract: MOSFET 50V 100A TO-220 TSM7N65
    Text: TSM7N65 650V N-Channel Power MOSFET ITO-220 TO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 650 1.2 @ VGS =10V 3 General Description The TSM7N65 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.


    Original     		PDF TSM7N65 ITO-220 O-220 TSM7N65 6A 650V MOSFET MOSFET 50V 100A TO-220

    6A 650V MOSFET

    Abstract: mosfet 650v
    Text: TSM7N65 650V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) 650 1.2 @ VGS =10V ID (A) 6.4 General Description The TSM7N65 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.


    Original     		PDF TSM7N65 O-220 ITO-220 TSM7N65 6A 650V MOSFET mosfet 650v

    A09 MOSFET

    Abstract: TSM7N65 ITO-220 6A 650V MOSFET 32nC
    Text: TSM7N65 650V N-Channel Power MOSFET ITO-220 TO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 650 1.2 @ VGS =10V 3 General Description The TSM7N65 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.


    Original     		PDF TSM7N65 ITO-220 O-220 TSM7N65 32nerty A09 MOSFET ITO-220 6A 650V MOSFET 32nC

    mosfet "marking code 44"

    Abstract: TSM2NB60CP
    Text: TSM2NB60 600V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 600 4.4 @ VGS =10V 1 General Description TO-251 (IPAK) The TSM2NB60 N-Channel Power MOSFET is TO-252 (DPAK) produced by new advance planar process. This


    Original     		PDF TSM2NB60 O-220 ITO-220 O-251 O-252 TSM2NB60 TSM2NB60CH TSM2NB60CP TSM2NB60CZ O-251 mosfet "marking code 44"

    Untitled

    Abstract: No abstract text available
    Text: TSM2NB60 600V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 600 4.4 @ VGS =10V 1 General Description TO-251 (IPAK) The TSM2NB60 N-Channel Power MOSFET is TO-252 (DPAK) produced by new advance planar process. This


    Original     		PDF TSM2NB60 O-220 ITO-220 O-251 TSM2NB60 O-252

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N70 Power MOSFET 7A, 700V N-CHANNEL POWER MOSFET 1   FEATURES * RDS ON < 1.6Ω @VGS = 10 V * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness  TO-220F TO-220 DESCRIPTION


    Original     		PDF O-220F O-220 O-220F2 O-220F1 O-220F3 QW-R502-103.

    B11 marking code

    Abstract: 1A 700V MOSFET mosfet 700V 2A
    Text: TSM2N70 700V N-Channel Power MOSFET TO-220 TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 700 6.5 @ VGS =10V 1 General Description The TSM2N70 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.


    Original     		PDF TSM2N70 O-220 O-251 O-252 TSM2N70 B11 marking code 1A 700V MOSFET mosfet 700V 2A

    Untitled

    Abstract: No abstract text available
    Text: TSM6N50 500V N-Channel Power MOSFET ITO-220 TO-252 DPAK TO-251 (IPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 500 1.4 @ VGS =10V 2.8 General Description The TSM6N50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.


    Original     		PDF TSM6N50 ITO-220 O-252 O-251 TSM6N50 TSM6N50CI TSM6N50CP TSM6N50CH

    POWER MOSFET 4600

    Abstract: 1A 700V MOSFET
    Text: TSM2N70 700V N-Channel Power MOSFET TO-220 TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 700 6.5 @ VGS =10V 1 General Description The TSM2N70 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.


    Original     		PDF TSM2N70 O-220 O-251 O-252 TSM2N70 POWER MOSFET 4600 1A 700V MOSFET

    TSM6N50

    Abstract: No abstract text available
    Text: TSM6N50 500V N-Channel Power MOSFET ITO-220 TO-252 DPAK TO-251 (IPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 500 1.4 @ VGS =10V 2.8 General Description The TSM6N50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.


    Original     		PDF TSM6N50 ITO-220 O-252 O-251 TSM6N50 TSM6N50CI TSM6N50CP TSM6N50CH

    SSP2N90A

    Abstract: mosfet vgs 5v
    Text: SSP2N90A Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS on = 7.0 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 2 A Improved Gate Charge Extended Safe Operating Area TO-220 θ Lower Leakage Current : 25 µA (Max.)


    Original     		PDF SSP2N90A O-220 SSP2N90A mosfet vgs 5v

    SSP1N60A

    Abstract: No abstract text available
    Text: SSP1N60A Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS on = 12 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 1 A Improved Gate Charge Extended Safe Operating Area TO-220 Lower Leakage Current : 25 µA (Max.) @ VDS = 600V


    Original     		PDF SSP1N60A O-220 SSP1N60A

    SSP2N60A

    Abstract: No abstract text available
    Text: SSP2N60A Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS on = 5.0 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 2 A Improved Gate Charge Extended Safe Operating Area TO-220 Lower Leakage Current : 25 µA (Max.) @ VDS = 600V


    Original     		PDF SSP2N60A O-220 SSP2N60A

    Untitled

    Abstract: No abstract text available
    Text: TSM6N50 500V N-Channel Power MOSFET ITO-220 TO-251 IPAK Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit VDS 500 V RDS(on) (max) 1.4 Ω Qg 25 nC TO-252 (DPAK) Features Block Diagram ● Low RDS(ON) 1.4Ω (Max.)


    Original     		PDF TSM6N50 ITO-220 O-251 O-252 TSM6N50CI 50pcs TSM6N50CP TSM6N50CH

    TSM2N60CP

    Abstract: MOSFET 600V 1A 2a 400v mosfet to-251 TSM2N60 TSM2N60CH
    Text: TSM2N60 600V N-Channel Power MOSFET TO-220 TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 600 5 @ VGS =10V 1 General Description The TSM2N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without


    Original     		PDF TSM2N60 O-220 O-251 O-252 TSM2N60 TSM2N60CP MOSFET 600V 1A 2a 400v mosfet to-251 TSM2N60CH

    25V 1A power MOSFET TO-220

    Abstract: mosfet 600V 2A TO-252 N-channel MOSFET MOSFET TO-220
    Text: TSM2N60 600V N-Channel Power MOSFET TO-220 TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 600 5 @ VGS =10V 1 General Description The TSM2N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without


    Original     		PDF TSM2N60 O-220 O-251 O-252 TSM2N60 25V 1A power MOSFET TO-220 mosfet 600V 2A TO-252 N-channel MOSFET MOSFET TO-220

    18BSC

    Abstract: TSM2N60 TSM2N60CH TSM2N60CP
    Text: TSM2N60 600V N-Channel Power MOSFET TO-220 TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 600 4.4 @ VGS =10V 1 General Description The TSM2N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without


    Original     		PDF TSM2N60 O-220 O-251 O-252 TSM2N60 18BSC TSM2N60CH TSM2N60CP

    Untitled

    Abstract: No abstract text available
    Text: TSM80N08 75V N-Channel Power MOSFET TO-220 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source Features VDS V RDS(on)(mΩ) ID (A) 75 8 @ VGS =10V 80 Block Diagram ● Advanced Trench Technology ● Low RDS(ON) 8mΩ (Max.) ● Low gate charge typical @ 91.5nC (Typ.)


    Original     		PDF TSM80N08 O-220 203pF 50pcs TSM80N08CZ 25rty

    Untitled

    Abstract: No abstract text available
    Text: TSM2N60 600V N-Channel Power MOSFET TO-220 TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 600 5 @ VGS =10V 1 General Description The TSM2N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without


    Original     		PDF TSM2N60 O-220 O-251 O-252 TSM2N60

    2a 400v mosfet to-251

    Abstract: N-Channel mosfet 600v 1a BRIDGE 2A 600V MOSFET TO-220 MOSFET "CURRENT source" impedance mosfet 600V 2A TO-252 N-channel MOSFET
    Text: TSM2N60 600V N-Channel Power MOSFET TO-220 TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 600 5 @ VGS =10V 1 General Description The TSM2N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without


    Original     		PDF TSM2N60 O-220 O-251 O-252 TSM2N60 2a 400v mosfet to-251 N-Channel mosfet 600v 1a BRIDGE 2A 600V MOSFET TO-220 MOSFET "CURRENT source" impedance mosfet 600V 2A TO-252 N-channel MOSFET

    2a 400v mosfet to-251

    Abstract: 600V 2A MOSFET N-channel MOSFET 400V TO-220 2a 400v mosfet marking code C5 N-Channel mosfet 600v 1a SOT c5 87 p channel mosfet 100v pin diagram of MOSFET 435 M dpak
    Text: TSM2N60 600V N-Channel Power MOSFET TO-220 TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 600 5 @ VGS =10V 1 General Description The TSM2N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without


    Original     		PDF TSM2N60 O-220 O-251 O-252 TSM2N60 2a 400v mosfet to-251 600V 2A MOSFET N-channel MOSFET 400V TO-220 2a 400v mosfet marking code C5 N-Channel mosfet 600v 1a SOT c5 87 p channel mosfet 100v pin diagram of MOSFET 435 M dpak

    Untitled

    Abstract: No abstract text available
    Text: TSM160N10 100V N-Channel Power MOSFET TO-220 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source Features ● ● ● ● VDS V RDS(on)(mΩ)(max) ID (A) 100 5.5 @ VGS =10V 160 Block Diagram Advanced Trench Technology Low RDS(ON) 5.5mΩ (Max.) Low gate charge typical @ 154nC (Typ.)


    Original     		PDF TSM160N10 O-220 154nC 300pF TSM160N10CZ 50pcs Alex121123

    Flyback Transformers SANYO TV

    Abstract: RD1004 2SC5707 uhf 150w mosfet 12v bfl4006 2SC5706 equivalent Si sw diode 20V 0.2A SOT323 SSFP package BBS3002 tv tube charger circuit diagrams
    Text: Discrete Devices 2010-8 Mobile Equipment • Application Block ■ Charger [GSM, UMTS] Charger DC-DC Converter / Load SW P3 Down Converter Low end P6 5 to 6V 0.5 to 1A CPU AC Adapter AC Adapter [CDMA2000] Q2 Q3 +B D2 Q1 System AC Adapter RF Block Down Converter (High end)


    Original     		PDF CDMA2000] Flyback Transformers SANYO TV RD1004 2SC5707 uhf 150w mosfet 12v bfl4006 2SC5706 equivalent Si sw diode 20V 0.2A SOT323 SSFP package BBS3002 tv tube charger circuit diagrams