200V 200A mosfet
Abstract: mosfet 400a 200V N mosfet 100v 200A "MOSFET Module" power mosfet 200A STY100NS20FD mosfet 200A time switch speed off 200 ampere MOSFET datasheet welding mosfet QJD0240002
Text: QJD0240002 Powerex, Inc., 200 Hillis St., Youngwood 15697 724 925-7272 Dual Power MOSFET Module 400 Amperes/200 Volts Description: Powerex Dual MOSFET Module is designed specially for customer applications. The module is isolated for easy mounting with other
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QJD0240002
Amperes/200
STY100NS20FD
200V 200A mosfet
mosfet 400a 200V
N mosfet 100v 200A
"MOSFET Module"
power mosfet 200A
mosfet 200A time switch speed off
200 ampere MOSFET datasheet
welding mosfet
QJD0240002
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"MOSFET Module"
Abstract: QJB0121002 MOSFET 50V 100A FS70UMJ-2 mosfet module
Text: QJB0121002 Powerex, Inc., 200 Hillis St., Youngwood 15697 724 925-7272 Four MOSFET Module 210 Amperes/100 Volts Description: Powerex power MOSFET Module designed specially for customer applications. Each module consists of four Mosfet transistors in an H-Bridge configuration with each
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QJB0121002
Amperes/100
FS70UMJ-2
QJB01210ce
-100A/
"MOSFET Module"
QJB0121002
MOSFET 50V 100A
mosfet module
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FS70UM-2
Abstract: QJD0142002 "dual MOSFET Module" "MOSFET Module"
Text: QJD0142002 Powerex Inc., 200 Hillis St., Youngwood 15697 724 925-7272 Dual Power MOSFET Module 100 Volts 420 Amperes Description: Powerex Dual Mosfet Module designed specially for customer applications. Features: • • • • • • • Isolated Mounting
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QJD0142002
FS70UM-2
QJD0142002
"dual MOSFET Module"
"MOSFET Module"
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"MOSFET Module"
Abstract: "dual MOSFET Module" 6900 mosfet FS70UMJ-2 QJD0142003
Text: QJD0142003 Powerex Inc., 200 Hillis St., Youngwood 15697 724 925-7272 Dual Power MOSFET Module 100 Volts 420 Amperes Description: Powerex Dual Mosfet Module designed specially for customer applications. Features: • • • • • • • Isolated Mounting
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QJD0142003
FS70UMJ-2
"MOSFET Module"
"dual MOSFET Module"
6900 mosfet
QJD0142003
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fs14sm-18a
Abstract: "MOSFET Module" QJS0950001 module 900 FS14SM18A n mosfet low vgs
Text: QJS0950001 Powerex Inc., 200 Hillis St., Youngwood 15697 724 925-7272 Single Power MOSFET Module 900 Volts 500 Amperes Description: Powerex Single Mosfet Module designed specially for customer applications. Features: • • • • • • C Isolated Mounting
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QJS0950001
FS14SM-18A
"MOSFET Module"
QJS0950001
module 900
FS14SM18A
n mosfet low vgs
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"MOSFET Module"
Abstract: "Battery Chargers" 200 ampere MOSFET datasheet 7272 POWER MODULES 160A QJD0232001 ds 470 53 power mosfet module
Text: QJD0232001 320 Amperes Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Dual Power MOSFET Module 320 Amperes 250 Volts Error! Not a valid link. Description: Powerex Dual MOSFET Half Bridge Modules with Avalanche Body Diodes
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QJD0232001
"MOSFET Module"
"Battery Chargers"
200 ampere MOSFET datasheet
7272
POWER MODULES 160A
QJD0232001
ds 470 53
power mosfet module
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AN569
Abstract: NTP30N20
Text: NTP30N20 Preferred Device Advance Information Power MOSFET 30 Amps, 200 Volts N–Channel Enhancement–Mode TO–220 http://onsemi.com Features • Source–to–Drain Diode Recovery Time Comparable to a Discrete 30 AMPERES 200 VOLTS 68 mΩ @ VGS = 10 V Typ
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NTP30N20
tpv10
r14525
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AN569
NTP30N20
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AN569
Abstract: NTB30N20 NTB30N20T4 SMD310
Text: NTB30N20 Advance Information Power MOSFET 30 Amps, 200 Volts N–Channel Enhancement–Mode D2PAK http://onsemi.com Features • Source–to–Drain Diode Recovery Time Comparable to a Discrete 30 AMPERES 200 VOLTS 68 mΩ @ VGS = 10 V Typ Fast Recovery Diode
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NTB30N20
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NTB30N20/D
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NTB30N20
NTB30N20T4
SMD310
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transistor c 2335
Abstract: AN569 NTP30N20
Text: NTP30N20 Preferred Device Advance Information Power MOSFET 30 Amps, 200 Volts N–Channel Enhancement–Mode TO–220 http://onsemi.com Features • Source–to–Drain Diode Recovery Time Comparable to a Discrete 30 AMPERES 200 VOLTS 68 mΩ @ VGS = 10 V Typ
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NTP30N20
tpv10
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transistor c 2335
AN569
NTP30N20
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N20E
Abstract: on semiconductor marking n20e 369D AN569 MTD6N20E MTD6N20E1 MTD6N20ET4 6n20e
Text: MTD6N20E Preferred Device Power MOSFET 6 Amps, 200 Volts N-Channel DPAK This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast
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MTD6N20E
MTD6N20E/D
N20E
on semiconductor marking n20e
369D
AN569
MTD6N20E
MTD6N20E1
MTD6N20ET4
6n20e
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AN569
Abstract: MTD6N20E MTD6N20E1 MTD6N20ET4 6n20e
Text: MTD6N20E Preferred Device Power MOSFET 6 Amps, 200 Volts N–Channel DPAK This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast
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MTD6N20E
MTD6N20E1
MTD6N20ET4
6n20e
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n20eg
Abstract: 6n20e N20E V750C on semiconductor marking n20e 369D AN569 MTD6N20E MTD6N20E1 MTD6N20ET4
Text: MTD6N20E Preferred Device Power MOSFET 6 Amps, 200 Volts N−Channel DPAK This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain−to−source diode with a fast
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MTD6N20E
MTD6N20E/D
n20eg
6n20e
N20E
V750C
on semiconductor marking n20e
369D
AN569
MTD6N20E
MTD6N20E1
MTD6N20ET4
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AN569
Abstract: NTB30N20 NTB30N20T4 SMD310
Text: NTB30N20 Advance Information Power MOSFET 30 Amps, 200 Volts N–Channel Enhancement–Mode D2PAK http://onsemi.com Features • Source–to–Drain Diode Recovery Time Comparable to a Discrete • • • 30 AMPERES 200 VOLTS 68 mΩ @ VGS = 10 V Typ Fast Recovery Diode
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NTB30N20T4
SMD310
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AN569
Abstract: MTY55N20E
Text: MTY55N20E Preferred Device Power MOSFET 55 Amps, 200 Volts N−Channel TO−264 This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain−to−source diode with fast recovery
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O-264
r14525
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Untitled
Abstract: No abstract text available
Text: MTB20N20E Preferred Device Power MOSFET 20 Amps, 200 Volts N−Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for
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MTW32N20E
Abstract: No abstract text available
Text: MTW32N20E Preferred Device Power MOSFET 32 Amps, 200 Volts N–Channel TO–247 This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast
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AN569
Abstract: MTW32N20E
Text: MTW32N20E Preferred Device Power MOSFET 32 Amps, 200 Volts N–Channel TO–247 This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast
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MTY55N20E
Abstract: AN569
Text: MTY55N20E Preferred Device Power MOSFET 55 Amps, 200 Volts N–Channel TO–264 This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with fast recovery
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k 2101 MOSFET
Abstract: 2N6789
Text: POWER MOSFET TRANSISTORS IK 200 Volt, 0.80 Ohm N-Channel 2N679° DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rosiom and a high transconductance. FEATURES • Fast Switching
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2N679°
2N6789
2N6790
k 2101 MOSFET
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ufn620
Abstract: No abstract text available
Text: POWER MOSFET TRANSISTORS UFN620 200 Volt, 0.8 Ohm N-Channel UFN622 UFN623 FEATURES DESCRIPTION • • • • • • The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rnsiom and a high transconductance.
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UFN620
UFN622
UFN623
UFN620
UFN621
UFN622
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ufn240
Abstract: 25jo TH 2190 mosfet
Text: POWER MOSFET TRANSISTORS UFN240 UFN242 UFN243 200 Volt, 0.2 Ohm N-Channel FEATURES DESCRIPTION • • • • • The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rosiom and a high transconductance.
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UFN240
UFN242
UFN243
UFN241
UFN242
25jo
TH 2190 mosfet
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2N6783
Abstract: No abstract text available
Text: POWER MOSFET TRANSISTORS 200 Volt, 1.5 Ohm N-Channel FEATURES • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Temperature Stability 2N6783 JTX, JTXV 2N6784 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available.
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2N6783
2N6784
2N67184
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ufn250
Abstract: UFN253
Text: T2 UNITRODE CORP 9347963 UNITRODE DQIOLHE ? ^ 92D CORP D 10642 UFN250 UFN251 UFN252 UFN253 POWER MOSFET TRANSISTORS r 3? 1 3 200 Volt, 0.085 Ohm N-Channel FEATURES DESCRIPTION • • • • • The Unitrode power MOSFET design utilizes the most advanced technology available.
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UFN250
UFN251
UFN252
UFN253
UFN251
UFN253
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Untitled
Abstract: No abstract text available
Text: POWER MOSFET TRANSISTORS UFN250 UFN252 UFN253 200 Volt, 0.085 Ohm N-Channel FEATURES DESCRIPTION • Fast Switching • Low Drive Current The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rosum and a high transconductance.
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UFN250
UFN252
UFN253
UFN251
06TA1M
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