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Text: SSM6E03TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type + N-Channel MOS Type SSM6E03TU Power Management Switch Applications Unit: mm • P-channel MOSFET and 1.8 V drive • N-channel MOSFET and 1.5 V drive • P-channel MOSFET and N-channel MOSFET incorporated into one
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Text: SSM6E01TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type U-MOS II + N-Channel MOS Type (Planer) SSM6E01TU Load Switch Applications • P-channel MOSFET and N-channel MOSFET incorporated into one package. • Low power dissipation due to P-channel MOSFET that features low
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SSM6E01TU
Abstract: HIGH POWER MOSFET TOSHIBA
Text: SSM6E01TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type U-MOS II + N-Channel MOS Type (Planer) SSM6E01TU Load Switch Applications • P-channel MOSFET and N-channel MOSFET incorporated into one package. • Low power dissipation due to P-channel MOSFET that features low
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SSM6E01TU
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KTA 3-25
Abstract: SSM6E01TU SSM6E
Text: SSM6E01TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type U-MOS II + N-Channel MOS Type (Planer) SSM6E01TU Load Switch Applications Unit: mm • P-channel MOSFET and N-channel MOSFET incorporated into one package. · Low power dissipation due to P-channel MOSFET that features low
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SSM6E01TU
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Untitled
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Text: SSM6E01TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type U-MOS II + N-Channel MOS Type (Planer) SSM6E01TU Load Switch Applications Unit: mm • P-channel MOSFET and N-channel MOSFET incorporated into one package. • Low power dissipation due to P-channel MOSFET that features low
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Untitled
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Text: SSM6E01TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type U-MOS II + N-Channel MOS Type (Planer) SSM6E01TU Load Switch Applications Unit: mm • P-channel MOSFET and N-channel MOSFET incorporated into one package. • Low power dissipation due to P-channel MOSFET that features low
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Text: SSM6E03TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type + N-Channel MOS Type SSM6E03TU ○Power Management Switch Applications Unit: mm • 1.8 V drive P-channel MOSFET and 1.5 V drive N-channel MOSFET incorporated into one package. • Low power dissipation due to P-channel MOSFET that features low
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Text: SSM6E03TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type + N-Channel MOS Type SSM6E03TU • 1.8 V driveP-channel MOSFET and 1.5 V driveN-channel MOSFET incorporated into one package. 2.1±0.1 • Low power dissipation due to P-channel MOSFET that features low
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Text: SSM6E03TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type + N-Channel MOS Type SSM6E03TU • 1.8 V driveP-channel MOSFET and 1.5 V driveN-channel MOSFET incorporated into one package. 2.1±0.1 • Low power dissipation due to P-channel MOSFET that features low
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Text: TOSHIBA TPD1031F TOSHIBA INTELLIGENT POWER DEVICE SILICON MONOLITHIC POWER MOS INTEGRATED CIRCUIT T P D 1 031 F LOW-SIDE POWER SWITCH FOR MOTORS, SOLENOIDS, AND LAMP DRIVERS TPD1031F is a monolithic power IC for low-side switches. The TPD1031F has a vertical MOSFET output with logic
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Text: TOSHIBA TPD1031F TOSHIBA INTELLIGENT POWER DEVICE SILICON MONOLITHIC POWER MOS INTEGRATED CIRCUIT T P D 1 031 F LOW-SIDE POWER SWITCH FOR MOTORS, SOLENOIDS, AND LAMP DRIVERS TPD1031F is a monolithic power IC for low-side switches. The TPD1031F has a vertical MOSFET output with logic
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Untitled
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Text: SSM6E02TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type + N-Channel MOS Type SSM6E02TU 2.1±0.1 package. 1.7±0.1 Low power dissipation due to P-channel MOSFET that features low Pb free Characteristics Symbol Rating Unit Drain-Source voltage VDS −20
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Text: SSM6E02TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type + N-Channel MOS Type SSM6E02TU 2.1±0.1 package. 1.7±0.1 Low power dissipation due to P-channel MOSFET that features low Pb free Characteristics Symbol Rating Unit Drain-Source voltage VDS −20
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Text: TOSHIBA TPD1031F TENTATIVE TOSHIBA INTELLIGENT POWER DEVICE SILICON MONOLITHIC POWER MOS INTEGRATED CIRCUIT T P D 1 031 F LOW-SIDE POWER SWITCH FOR MOTORS, SOLENOIDS, AND LAMP DRIVERS TPD1031F is a monolithic power IC for low-side switches. The TPD1031F has a vertical MOSFET output with logic
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TPD1031F
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Untitled
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Text: TOSHIBA TPD1028BS TOSHIBA INTELLIGENT POWER DEVICE SILICON MONOLITHIC POWER MOS IC TPD1028BS LOW -SIDE SW ITCH FOR M O TOR, SO LEN O ID A N D LAM P DRIVE TPD1028BS is a monolithic power IC for low-side switch. The IC has a vertical MOSFET output which can be directly
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Text: SSM6G18NU Silicon P Channel MOS Type / Silicon Epitaxial Schottky Barrier Diode SSM6G18NU Power Management Switch Applications • Combined a P-channel MOSFET and a Schottky barrier diode in one package. • Low RDS ON and Low VF RDS(ON) = 261 mΩ (max) (@VGS = -1.5V)
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uDFN-6
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Text: SSM6G18NU Silicon P Channel MOS Type / Silicon Epitaxial Schottky Barrier Diode SSM6G18NU Power Management Switch Applications • Combined a P-channel MOSFET and a schottky barrier diode in one package. • Low RDS ON and Low VF RDS(ON) = 261 mΩ (max) (@VGS = -1.5V)
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Text: SSM6G18NU Silicon P Channel MOS Type / Silicon Epitaxial Schottky Barrier Diode SSM6G18NU Power Management Switch Applications • Combined a P-channel MOSFET and a schottky barrier diode in one package. • Low RDS ON and Low VF RDS(ON) = 261 m (max) (@VGS = -1.5V)
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Text: TOSHIBA Discrete Devices RF P ower MOSFET Power 2SK3078A Application Note Contens Contens ・・Bias Bias Current Current // DC DC Characteristics Characteristics Vds Vds = 3.6V, 3.6V, 4.8V, 4.8V, 6.0V 6.0V Vgs = 0.5V ~ 1.7 7 V 1. Vgs = 0.5V ∼ 1.7V 0.05V
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2SK3078A
110mA
470MHz
23dBm
23dBm
12ulations.
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2SK3074
Abstract: No abstract text available
Text: TO SHIBA 2SK3074 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3074 RF PO W ER MOSFET FOR VHF- AND UHF-BAND PO W ER AM PLIFIER • • • Output Power Power Gain Drain Efficiency P q = 630mW Gp^ 14.9dB 7j ^45 % M A X IM U M RATINGS Ta = 25°C)
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2SK3074
630mW
2200pF
520MHz
2SK3074
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Text: TOSHIBA 2SK3075 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3075 Unit in mm RF PO W ER MOSFET FOR VHF- AND UHF-BAND PO W ER AM PLIFIER Output Power Power Gain Drain Efficiency P O = 7 -5 W GP= 11.7dB 7d ^ 5 0 % M A X IM U M RATINGS Ta = 25°C
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2SK3075
961001EAA1
2200pF
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Text: T O SH IB A TENTATIVE TPD1030F TOSHIBA INTELLIGENT POWER DEVICE SILICON POWER MOS IC MODULE TPD1030F 2-IN-1 LOW -SIDE SW ITCH M O D U LE FOR M O TOR, SO LEN O ID A N D LA M P DRIVE TPD1030F is a 2-IN-1 power switch module for low-side switch. The IC has a vertical MOSFET output which can be directly
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TPD1030F
000mm2
OP8-P-225-1
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toshiba 2505 dd
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE TPD1028AS TOSHIBA INTELLIGENT PO W ER DEVICE SILICON MONOLITHIC PO W ER MOS IC TPD1028AS LOW -SIDE SWITCH FOR M O TO R , SOLENOID A N D LAM P DRIVE TPD1028AS is a monolithic power IC for low-side switch. The IC has a vertical MOSFET output which can be directly
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XC6377
Abstract: XC6377A503SR XC6377A303SR XC6376A333
Text: XC6376/77 Series PWM Controlled, PWM/PFM Switchable Step-down DC/DC Converters ◆ P Channel Power MOSFET Built-in ◆ Maximum Output Current: 500mA ◆ Output Voltage Range: 1.5~6.0V ◆ Oscillator Frequency: 300kHz ◆ Maximum Duty Ratio: 100% ◆ High Efficiency: 95%
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500mA
300kHz
500mA
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IOUT10mA300mA
300mA
IOUT300mA10mA
XC6377
XC6377A503SR
XC6377A303SR
XC6376A333
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