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    POWER MOS THERMAL Search Results

    POWER MOS THERMAL Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    POWER MOS THERMAL Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: APT6013JFLL 600V 39A 0.130Ω R POWER MOS MOS 7 FREDFET POWER 7 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		PDF APT6013JFLL OT-227

    Untitled

    Abstract: No abstract text available
    Text: APT8020JLL 800V 33A 0.200W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON and Qg. Power MOS 7TM combines lower conduction and switching losses


    Original     		PDF APT8020JLL OT-227

    Untitled

    Abstract: No abstract text available
    Text: APT50M50JLL 500V 71A 0.050W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON and Qg. Power MOS 7TM combines lower conduction and switching losses


    Original     		PDF APT50M50JLL OT-227

    Diode 188

    Abstract: No abstract text available
    Text: APT6010JLL 600V 47A 0.100W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON and Qg. Power MOS 7TM combines lower conduction and switching losses


    Original     		PDF APT6010JLL OT-227 Diode 188

    DIODE 720

    Abstract: No abstract text available
    Text: APT20M10JLL 200V 185A 0.010W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON and Qg. Power MOS 7TM combines lower conduction and switching losses


    Original     		PDF APT20M10JLL OT-227 DIODE 720

    Untitled

    Abstract: No abstract text available
    Text: APT30M30JLL 88A 0.030W 300V POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON and Qg. Power MOS 7TM combines lower conduction and switching losses


    Original     		PDF APT30M30JLL OT-227

    apt8024jll

    Abstract: No abstract text available
    Text: APT8024JLL 800V 29A 0.240W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON and Qg. Power MOS 7TM combines lower conduction and switching losses


    Original     		PDF APT8024JLL OT-227 apt8024jll

    Untitled

    Abstract: No abstract text available
    Text: APT5010JLL 500V 44A 0.100W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON and Qg. Power MOS 7TM combines lower conduction and switching losses


    Original     		PDF APT5010JLL OT-227

    Untitled

    Abstract: No abstract text available
    Text: APT50M65JLL 60A 0.065 W 500V POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON and Qg. Power MOS 7TM combines lower conduction and switching losses


    Original     		PDF APT50M65JLL OT-227 othe187)

    Untitled

    Abstract: No abstract text available
    Text: APT50M75JLL 51A 0.075W 500V POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON and Qg. Power MOS 7TM combines lower conduction and switching losses


    Original     		PDF APT50M75JLL OT-227

    Untitled

    Abstract: No abstract text available
    Text: APT60M75L2LL 600V 73A 0.075W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON and Qg. Power MOS 7TM combines lower conduction and switching losses


    Original     		PDF APT60M75L2LL O-264 O-264

    Untitled

    Abstract: No abstract text available
    Text: APT20M20JLL 200V 104A 0.020W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON and Qg. Power MOS 7TM combines lower conduction and switching losses


    Original     		PDF APT20M20JLL OT-227

    Untitled

    Abstract: No abstract text available
    Text: APT10045JLL 21A 0.450 W 1000V POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON and Qg. Power MOS 7TM combines lower conduction and switching losses


    Original     		PDF APT10045JLL OT-227

    APT50M75JLL

    Abstract: No abstract text available
    Text: APT50M75JLL 52A 0.075 W 500V POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON and Qg. Power MOS 7TM combines lower conduction and switching losses


    Original     		PDF APT50M75JLL OT-227 othe187) APT50M75JLL

    APT10035JLL

    Abstract: No abstract text available
    Text: APT10035JLL 25A 0.350 W 1000V POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON and Qg. Power MOS 7TM combines lower conduction and switching losses


    Original     		PDF APT10035JLL OT-227 oth187) APT10035JLL

    rjp6065

    Abstract: RJP6006 rjp3053 rjh60f5 TRANSISTOR SMD MARKING CODE jg BCR1AM-12A equivalent RJH60F7 RJP3063 triac kt 207 600v RJP6006DPK
    Text: 2009.12 Renesas Discrete General Catalog Transistor/Diode/Triac/ Thyristor www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Amplification Transistors Power Devices Non-MOS Low-voltage MOS Low switching loss and high speed High-voltage MOS Package current capacity and thermal resistance


    Original     		PDF

    TH 382

    Abstract: No abstract text available
    Text: APT12067JLL 1200V 17A 0.670W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON and Qg. Power MOS 7TM combines lower conduction and switching losses


    Original     		PDF APT12067JLL OT-227 TH 382

    Untitled

    Abstract: No abstract text available
    Text: APT1003RKLL 1000V 4A 3.00W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON and Qg. Power MOS 7TM combines lower conduction and switching losses


    Original     		PDF APT1003RKLL O-247 O-220

    tc 7680

    Abstract: No abstract text available
    Text: APT10026L2LL 1000V 38A 0.260W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON and Qg. Power MOS 7TM combines lower conduction and switching losses


    Original     		PDF APT10026L2LL O-264 O-264 tc 7680

    Untitled

    Abstract: No abstract text available
    Text: APT6013JLL 600V 39A 0.130W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON and Qg. Power MOS 7TM combines lower conduction and switching losses


    Original     		PDF APT6013JLL OT-227

    Untitled

    Abstract: No abstract text available
    Text: APT10026JLL 1000V 30A 0.260W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON and Qg. Power MOS 7TM combines lower conduction and switching losses


    Original     		PDF APT10026JLL OT-227

    APT12040JLL

    Abstract: Diode 96
    Text: APT12040JLL 1000V 24A 0.400W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON and Qg. Power MOS 7TM combines lower conduction and switching losses


    Original     		PDF APT12040JLL OT-227 APT12040JLL Diode 96

    APT6010JLL

    Abstract: No abstract text available
    Text: APT6010JLL 600V 47A 0.100W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON and Qg. Power MOS 7TM combines lower conduction and switching losses


    Original     		PDF APT6010JLL OT-227 APT6010JLL

    Untitled

    Abstract: No abstract text available
    Text: APT30M36JLL 76A 0.036W 300V POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON and Qg. Power MOS 7TM combines lower conduction and switching losses


    Original     		PDF APT30M36JLL OT-227