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    APT20M10JLL Search Results

    APT20M10JLL Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT20M10JLL Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF

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    Abstract: No abstract text available
    Text: APT20M10JLL 200V 185A 0.010 W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON and Qg. Power MOS 7TM combines lower conduction and switching losses


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    APT20M10JLL OT-227 PDF

    DIODE 720

    Abstract: No abstract text available
    Text: APT20M10JLL 200V 185A 0.010W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON and Qg. Power MOS 7TM combines lower conduction and switching losses


    Original
    APT20M10JLL OT-227 DIODE 720 PDF

    mj 1504 transistor equivalent

    Abstract: ARF450 FREDFETs transistors mj 1504 APT1201R2BLL APT60GF120JRD APT60M75JVR APT100S20B APT4014BVR APT1208
    Text: 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance this position as


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