Untitled
Abstract: No abstract text available
Text: NJG1155UX2 GNSS LOW NOISE AMPLIFIER GaAs MMIC 1 GENERAL DESCRIPTION The NJG1155UX2 is a LNA GaAs MMIC designed for GNSS applications, like GPS, Galileo, GLONASS and COMPASS. The NJG1155UX2 is featured low noise figure, and operates from 1.5V to 3.3V single voltage. The NJG1155UX2 has stand-by mode to save the
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NJG1155UX2
NJG1155UX2
699mg
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XC6220B121
Abstract: xc6220c XC6220B XC6220A TR MARKING 11100 sot89 5l 0380 XC6220 XC6220A3 XC6220B301 CH3100mA
Text: XC6220 Series ETR0341-008 1A LDO Voltage Regulator with “GreenOperation” ☆GreenOperation-Compatible •GENERAL DESCRIPTION The XC6220 series is a highly accurate, low noise, high speed, low dropout, and large current CMOS voltage regulator with GreenOperation function. The series consists of a voltage reference, an error amplifier, a current limiter, an inrush current
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XC6220
ETR0341-008
XC6220B121
xc6220c
XC6220B
XC6220A
TR MARKING 11100 sot89
5l 0380
XC6220A3
XC6220B301
CH3100mA
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nec 2412
Abstract: transistor NEC 882 p 2412 NEC 2SC5012-T1 2SC5012 2SC5012-T2 NEC 2403 106 NEC 2403 545 TD-2412 nec 2702
Text: DATA SHEET SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product fT = 9 GHz TYP. in millimeters 2.1 ± 0.2 1.25 ± 0.1
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2SC5012
2SC5012-T1
2SC5012-T2
nec 2412
transistor NEC 882 p
2412 NEC
2SC5012-T1
2SC5012
2SC5012-T2
NEC 2403 106
NEC 2403 545
TD-2412
nec 2702
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3x1 berg connector
Abstract: sw dip-2 Diode smd s4 2g 269147-2 diode smd marked s4 SMD diode s26 MX045 smd 1A4 t1A smd smd schottky diode s4 35
Text: LXD973 PQFP MII Demo Board Development Kit Manual May 2001 Order Number: 249719-001 For technical assistance on this product, please call 1-800-628-8686, or send an e-mail to support@mailbox.intel.com Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual
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LXD973
TP12SH8AQE
H1200
TP5-52,
LXT973
IC149-100-014-S5
74LVX14
TC74LVX14FN
74LVC244
SN74LVC244ADW
3x1 berg connector
sw dip-2
Diode smd s4 2g
269147-2
diode smd marked s4
SMD diode s26
MX045
smd 1A4
t1A smd
smd schottky diode s4 35
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UTC 2003
Abstract: ANA 658 AVANTEK Avantek amplifier Avantek amplifier 112 transistor 4496 avantek utc 523 AVANTEK utc AVANTEK TO-8 UTC501
Text: AVANTEK INC MME D llM n tb OO.'07' T b l fl LAVA UTO/UTC 501 Series Thln-Film Cascadable Amplifier S to 500 MHz - ^ f ' - ' K - 0 CV O I APPLICATIONS FEATURES • Frequency Range: 5 to 500 MHz • Medium Gain: 15.5 dB (Typ • Low Current Drain: 10 mA (Typ)
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ZHL-2-50p3
Abstract: L1010
Text: Amplifiers Cooxial M e d iu m H ig h P ower 50 kHz to 8 GHz up to 1W + 3 0 dBm output FREQ. {MHz) ►►► MODEL NO. GAIN (dB) MAXIMUM POWER (dBm) Min. Flatness Max. Output (1 dB Comp.) Min. DYNAMIC RANGE VSWR Max. Input (no damage) NF (dB) Typ. IP3 (dBm)
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L-450-75
ZHL-1010-75
ZHL-2-12
ZHL-32A
ZHL-1042J
ZHL-4240
ZHL-2-50p3
L1010
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transistor pnp a111
Abstract: NA41U TO-126 ON 150 watt hf transistor 12 volt PJO 390 CM NA42 NA42U NB021EY NB211YY NR001E
Text: NA41 NPN , NA42(PNP) Na j U^STMICOND {DISCRETE} ^ 5JIL13JL N A T L äfl SEMI C O N D (DISCRETE) National Semiconductor NA41(NPN) NA42(PNP) Dlf| bSD1130 DOaSSbT 7 28C 2 .5 Amp com plem entary p o w e r tra n s is to rs fl~| packages and lead coding features
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bSD113D
O-126
O-220
O-126
O-220
hSD113D
NB021EY
NB211YY
NR001E
NA41U
transistor pnp a111
NA41U
TO-126 ON
150 watt hf transistor 12 volt
PJO 390 CM
NA42
NA42U
NB021EY
NB211YY
NR001E
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nec 501 t
Abstract: uPC2799GR nec 501 NEC FIP 12
Text: PRELIMINARY DATA SHEET_ BIPOLAR ANALOG INTEGRATED CIRCUIT juPC2799GR UP CONVERTOR FOR CABLE MODEM DESCRIPTION The /iPC2799GR is Silicon monolithic 1C designed for use.as up-converter for cable modem. This 1C consists of local oscillator, AGC amplifier, mixer and so on. /1P C I 686GV and ¿¿PC2798GR are also available as for kit-use with this IC.
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uPC2799GR
/iPC2799GR
686GV
PC2798GR
20-pin
iPC2799GR-E1
nec 501 t
nec 501
NEC FIP 12
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Untitled
Abstract: No abstract text available
Text: SCS-THOMSON * 7 w9 RfflQ @[H[L[E iMRilD g@ TS924 RAIL TO RAIL HIGH OUTPUT CURRENT QUAD OPERATIONAL AMPLIFIER • ■ ■ ■ RAIL TO RAIL INPUT AND OUTPUT LOW NOISE : ^V A /H zLOW DISTORTION HIGH OUTPUT CURRENT :80mA (able to drive 32Ì2 loads ■ HIGH SPEED : 4MHz 1.3V/>is
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TS924
900nV
TS924A)
DIP14
TS924I
TS924
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transistor NEC D 882 p
Abstract: transistor NEC b 882 p transistor NEC 882 p transistor NEC b 882 nec d 882 p transistor nec 358 amplifier transistor NEC D 587 34077 6069 marking
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product fr = 9 GHz TYP. • Low Noise, High Gain •
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2SC5012
2SC5012-T1
2SC5012-T2
transistor NEC D 882 p
transistor NEC b 882 p
transistor NEC 882 p
transistor NEC b 882
nec d 882 p transistor
nec 358 amplifier
transistor NEC D 587
34077
6069 marking
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AN-415
Abstract: MJE350
Text: MJE350 SILICON PLASTIC M ED IU M POWER PNP SILICO N TRANSISTOR 0.5 AMPERE POWER TRANSISTOR PNP SILICON . . . designed fo r use in line operated audio and television applications and as low pow er, line-operated series pass and switching regulators. • High Collector-E m itter Sustaining Voltage —
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MJE350
AN-415)
AN-415
MJE350
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GES6220
Abstract: GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 GES6001
Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE Type @ 1 0 m A V Min. 1 60 GES5822 NP hl GES5823 a a GES5824 GES5825 I GES5826 40 GES5827 GES5828 GES6000 GES6001 GES6002 200 200 120 200 300 40 40 25 25 25 50 00 00 OB 500 800 300 300
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GES5822
GES5823
GES5824
GES5825
GES5826
GES5827
GES5828
GES6000
GES5447
GES6220
GES6001
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2SC5012-T1
Abstract: No abstract text available
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t ft- = 9 G H z T Y P . •
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2SC5012
2SC5012-T1
2SC5012-T2
2SC5012-T1
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2N4123 pnp silicon
Abstract: 2N4401 520 GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14
Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE b v ceo Device Type @ 10mA- V Min. Max. @ lc (mA) GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30 30 150 60 60 50
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GES5819
GES5820
GES5821
MPSA05
MPSA06
MPSA12
MPSA13
MPSA14
MPSA20
2N4123 pnp silicon
2N4401 520
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2n3904 409
Abstract: 2N4125 2N4126 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4400
Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE V C E sa t E b v CEO Device Type @ 1 0 m A -(V) Min. M ax. @ l c (m A) 2N 3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300 150
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2N3903
2N3904
2N3905
2N3906
2N4123
2N4124
2N4125
2N4126
2N4400
2N4I26
2n3904 409
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D55A7
Abstract: D55A D54A7D
Text: D55A7p PNP POWER DARLINGTON TRANSISTORS -100 VOLTS -7 AMP, 30 WA1 rrs Designed for high power switching applications, hammer drive, pulse motor drive applications. Features: • High DC Current Gain: hF E = 2000 Min. (at V c E = -3V, lc = ~3A) CASE STYLE TO-220IS
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D55A7|
D54A7D
TQ-220
T0-220IS
D55A7
D55A
D54A7D
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96t1
Abstract: m1501f
Text: Am1501 Dual Operational Amplifiers Distinctive Characteristics • Low o ffse t voltage • Low o ffse t current • Guaranteed d r ift characteristics • Offsets guaranteed over entire com m on mode and supply voltage ranges • Slew rate o f 10V/¿is as a summing am p lifie r
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Am1501
Am1501
96t1
m1501f
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TRF 840
Abstract: GE SCR c390pb c180 scr C180M SCR GE C180 C180 C180B c180c scr t437 c180c scr ge
Text: PHASE CONTROL SCR's 110 235 TO 850 AMPERES | GETYPE E LEC TRIC AL SPECIFICATION S | VO LTAGE RANGE FORW ARD CONDUCTION •tirm s Max. R M S On-State Current A) i NAV) ( HAV) , TSM .? „ 1 1 y TM Q 0 JC xr C380 C390 C391 C 501 C502 1 500-1300 100-1300 500-1 TDM
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pa501
Abstract: No abstract text available
Text: Or, Call Customer Service at 1-800-548-6132 USA Only BURR-BROW NS OPA5Q1 n OPA5Q1 f^ n = APPLICATIONS • HIGH OUTPUT CURRENT: ±10A Peak • MOTOR DRIVER • WIDE POWER SUPPLY RANGE: +10 to +40V • SERVO AMPLIFIER • LOW QUIESCENT CURRENT: 2.6mA • SYNCRO DRIVER
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1731Bb5
pa501
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2N3903
Abstract: 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 2N4401
Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE V C E s a t E b v CEO Device Type @ 1 0 m A -(V) Min. M ax. @ l c (m A) 10 10 2N 3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300
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2N3903
2N3904
2N3905
2N3906
2N4123
2N4124
2N4125
2N4126
2N4400
150mA)
2N4401
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BUW50
Abstract: transistor 468 k2550
Text: Æ&m o s p e c NPN SILICON POWER TRANSISTORS NPN . designed for use in general purpose power amplifier application BUW50 FEATURES: * Very Low Saturation Voltage and High Gain for reduced load Operation. * Faster Switchingent Times * Lower Switching Losses
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BUW50
transistor 468
k2550
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Untitled
Abstract: No abstract text available
Text: TS921 RAIL TO RAIL HIGH OUTPUT CURRENT SINGLE OPERATIONAL AMPLIFIER • ■ ■ ■ ■ ■ ■ ■ ■ RAIL TO RAIL INPUT AND OUTPUT LOW NOISE : 9nV/V Hz " LOW DISTORTION HIGH OUTPUT CURRENT : 80mA (able to drive 32i2 loads) HIGHSPEED : 4MHz, 1.3V/HS OPERATING FROM 2.7V to 12V
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TS921
TS921
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General electric SCR c39
Abstract: c180 scr C180 C380 C380A C380B C380C C380D C380E C390
Text: PHASE CONTROL SCR's 110 235 TO 850 AMPERES | GETYPE C180 C380 C390 C391 C 501 C502 1 500-1300 100-1300 500-1 TDM *,wv 1300-1800 700 1700 1500-2000 1 735 850 550 @ 6 5 JC 500 @ 65°C 850 550 @65°C 550 @ 57°C 850 135 @ 80°C 380 235 /• 80°C 180 @ 80°C
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2n3904 418
Abstract: 2N3905 Equivalent 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126
Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE V C E sa t E b v CEO Device Type @ 1 0 m A -(V) Min. Max. @ l c (mA) 2N 3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300 150
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2N3903
2N3904
2N3905
2N3906
2N4123
2N4124
2N4125
2N4126
2N4400
2n3904 418
2N3905 Equivalent
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