power Diode 800V 20A
Abstract: S20VT80
Text: SHINDENGEN 3 Phase Bridge Diode Diode Module OUTLINE DIMENSIONS S20VT80 CaseCase : 2F: SVT Unit : mm 800V 20A FEATURES ●Dual In-Line Package ●Compact 3 phase bridge ●High IFSM ●Applicable to mount on glass-epoxy substrate (VTA type) APPLICATION ●Big Power Supply
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S20VT80
S20VTx
power Diode 800V 20A
S20VT80
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RM10TA-M
Abstract: E80276 AC motor reverse forward electrical diagram FORWARD REVERSE 3 PHASE MOTOR
Text: MITSUBISHI DIODE MODULES RM10TA-M,-H MEDIUM POWER GENERAL USE INSULATED TYPE RM10TA-M,-H • IO • VRRM DC output current . 20A Repetitive peak reverse voltage . 400/800V • 3 phase bridge • Insulated Type • UL Recognized
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RM10TA-M
400/800V
E80276
E80271
E80276
AC motor reverse forward electrical diagram
FORWARD REVERSE 3 PHASE MOTOR
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI DIODE MODULES RM10TA-M,-H MEDIUM POWER GENERAL USE INSULATED TYPE RM10TA-M,-H DC output current . 20A Repetitive peak reverse voltage . 400/800V • 3 phase bridge • Insulated Type • UL Recognized Yellow Card No. E80276 N
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RM10TA-M
400/800V
E80276
E80271
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI DIODE MODULES RM10TA-M,-H MEDIUM POWER GENERAL USE INSULATED TYPE RM10TA-M,-H DC output current . 20A Repetitive peak reverse voltage . 400/800V • 3 phase bridge • Insulated Type • UL Recognized Yellow Card No. E80276 N
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RM10TA-M
400/800V
E80276
E80271
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APT38F80B2
Abstract: APT38F80L MIC4452
Text: APT38F80B2 APT38F80L 800V, 38A, 0.28Ω Max, trr ≤300ns N-Channel FREDFET T-Max Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
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APT38F80B2
APT38F80L
300ns
O-247
APT38F80B2
APT38F80L
MIC4452
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APT38F80B2
Abstract: APT38F80L MIC4452
Text: APT38F80B2 APT38F80L 800V, 41A, 0.24Ω Max, trr ≤300ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
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APT38F80B2
APT38F80L
300ns
O-264
APT38F80
O-247
APT38F80B2
APT38F80L
MIC4452
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400v 20A ultra fast recovery diode
Abstract: APT38F80B2 APT38F80L MIC4452
Text: APT38F80B2 APT38F80L 800V, 38A, 0.28Ω Max, trr ≤300ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
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APT38F80B2
APT38F80L
300ns
O-247
400v 20A ultra fast recovery diode
APT38F80B2
APT38F80L
MIC4452
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Untitled
Abstract: No abstract text available
Text: APT38F80B2 APT38F80L 800V, 41A, 0.24Ω Max, trr ≤300ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
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APT38F80B2
APT38F80L
300ns
O-264
O-247
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Untitled
Abstract: No abstract text available
Text: APTM100DA40T1G VDSS = 1000V RDSon = 400mΩ typ @ Tj = 25°C ID = 20A @ Tc = 25°C Boost chopper MOSFET Power Module 5 6 11 Application • • • CR1 3 4 Q2 NTC Features • 9 10 1 2 AC and DC motor control Switched Mode Power Supplies Power Factor Correction
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APTM100DA40T1G
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Untitled
Abstract: No abstract text available
Text: APTM100SK40T1G VDSS = 1000V RDSon = 400mΩ typ @ Tj = 25°C ID = 20A @ Tc = 25°C Buck chopper MOSFET Power Module 5 11 6 Application • • Q1 7 AC and DC motor control Switched Mode Power Supplies Features 8 NTC 3 4 • CR2 1 2 • • • 12 Power MOS 8 MOSFETs
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APTM100SK40T1G
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APTM100DA40T1G
Abstract: APT0406 APT0502
Text: APTM100DA40T1G VDSS = 1000V RDSon = 400mΩ typ @ Tj = 25°C ID = 20A @ Tc = 25°C Boost chopper MOSFET Power Module 5 6 11 Application • • • CR1 3 4 Q2 NTC Features • 9 10 1 2 AC and DC motor control Switched Mode Power Supplies Power Factor Correction
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APTM100DA40T1G
APTM100DA40T1G
APT0406
APT0502
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APT0406
Abstract: APT0502 APTM100SK40T1G Thermistor 100,000 cycle mosfet 16a 800v
Text: APTM100SK40T1G VDSS = 1000V RDSon = 400mΩ typ @ Tj = 25°C ID = 20A @ Tc = 25°C Buck chopper MOSFET Power Module 5 11 6 Application • • Q1 7 AC and DC motor control Switched Mode Power Supplies Features 8 NTC 3 4 • CR2 1 2 • • • 12 Power MOS 8 MOSFETs
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APTM100SK40T1G
APT0406
APT0502
APTM100SK40T1G
Thermistor 100,000 cycle
mosfet 16a 800v
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"VDSS 800V" 40A mosfet
Abstract: No abstract text available
Text: APTMC120HR11CT3G Phase Leg & Dual Common Emitter Power Module SiC MOSFET Q1, Q2 : VCES = 1200V ; RDSon = 110mΩ max @ Tj = 25°C Trench & Field Stop IGBT3 (Q3, Q4): VCES = 600V ; IC = 20A @ Tc = 80°C Application • Solar converter • Uninterruptible Power Supplies
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APTMC120HR11CT3G
"VDSS 800V" 40A mosfet
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E80276
Abstract: TM10T3B-M
Text: MITSUBISHI THYRISTOR MODULES TM10T3B-M,-H MEDIUM POWER GENERAL USE INSULATED TYPE TM10T3B-M,-H • IO • VRRM • • • • DC output current . 20A Repetitive peak reverse voltage . 400/800V VDRM Repetitive peak off-state voltage
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TM10T3B-M
400/800V
E80276
E80271
E80276
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI THYRISTOR MODULES TM10T3B-M,-H MEDIUM POWER GENERAL USE INSULATED TYPE TM10T3B-M,-H DC output current . 20A Repetitive peak reverse voltage . 400/800V VDRM Repetitive peak off-state voltage . 400/800V 3 Phase Mix Bridge
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TM10T3B-M
400/800V
E80276
E80271
110YPE
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI THYRISTOR MODULES TM10T3B-M,-H MEDIUM POWER GENERAL USE INSULATED TYPE TM10T3B-M,-H DC output current . 20A Repetitive peak reverse voltage . 400/800V VDRM Repetitive peak off-state voltage . 400/800V 3 Phase Mix Bridge
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TM10T3B-M
400/800V
E80276
E80271
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APT10078BLL
Abstract: No abstract text available
Text: APT50GT120B2RDL G 1200V TYPICAL PERFORMANCE CURVES APT50GT120B2RDL(G) *G Denotes RoHS Compliant, Pb Free Terminal Finish. Resonant Mode IGBT The Thunderbolt IGBT® used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast switching speed.
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APT50GT120B2RDL
APT10078BLL
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MOSFET welding INVERTER 200A
Abstract: H bridge 300v 30a jc5010
Text: APT20GS60BRDQ1 G APT20GS60SRDQ1(G) 600V, 20A, VCE(ON) = 2.8V Typical Thunderbolt High Speed NPT IGBT with Anti-Parallel 'DQ' Diode The Thunderbolt HS series is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for significantly lower turn-on energy Eoff. The low
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APT20GS60BRDQ1
APT20GS60SRDQ1
100kHz,
MOSFET welding INVERTER 200A
H bridge 300v 30a
jc5010
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SKW07N120
Abstract: No abstract text available
Text: Preliminary SKW07N120 Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers:
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SKW07N120
O-247AC
Q67040-S4280
Mar-00
SKW07N120
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APT10078BLL
Abstract: APT50GT120LRDQ2G
Text: APT50GT120LRDQ2 G 1200V TYPICAL PERFORMANCE CURVES APT50GT120LRDQ2 APT50GT120LRDQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT® TO-264 The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch
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APT50GT120LRDQ2
APT50GT120LRDQ2
APT50GT120LRDQ2G*
O-264
50KHz
APT10078BLL
APT50GT120LRDQ2G
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Untitled
Abstract: No abstract text available
Text: TYPICAL PERFORMANCE CURVES 1200V APT33GF120B2_LRDQ2 G APT33GF120B2RDQ2 APT33GF120LRDQ2 APT33GF120B2RDQ2G* APT33GF120LRDQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. FAST IGBT & FRED (B2) T-Max® TO-264 The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through
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APT33GF120B2
APT33GF120B2RDQ2
APT33GF120LRDQ2
APT33GF120B2RDQ2G*
APT33GF120LRDQ2G*
20KHz
O-264
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RM10TB
Abstract: RM10TB-M rm10t
Text: MITSUBISHI DIODE MODULES RM10TB-M,-H MEDIUM POWER GENERAL USE INSULATED TYPE ! RM10TB-M,-H j • lo DC output current.20A Repetitive peak reverse voltage 400/800V • 3 phase bridge • Insulated Type • UL Recognized Yellow Card No. E80276 N>
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RM10TB-M
10TB-M
400/800V
E80276
E80271
60Hzi
RM10TB
rm10t
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI DIODE MODULES RM10TA-M,-H MEDIUM POWER GENERAL USE INSULATED TYPE RM10TA-M,-H • lo DC output cu rre n t. 20A Repetitive peak reverse voltage 400/800V • 3 phase bridge • Insulated Type • UL Recognized Yellow Card No. E80276 N
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RM10TA-M
400/800V
E80276
E80271
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forward and reverse control of 3 phase ac motor
Abstract: "Power Diode" 500V 20A
Text: MITSUBISHI DIODE MODULES RM10TA-M,-H MEDIUM POWER GENERAL USE INSULATED TYPE RM10TA-M,-H •.to • • • • DC output current. 20A V rrm Repetitive peak reverse voltage 400/800V 3 phase bridge Insulated Type UL Recognized Yellow Card No. E80276 N
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RM10TA-M
400/800V
E80276
E80271
forward and reverse control of 3 phase ac motor
"Power Diode" 500V 20A
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