B20NM50FD
Abstract: P20NM50FD F20NM50D P20NM50 STP20NM50FD B20NM50 STB20NM50FD STF20NM50D ZVS phase-shift converters
Text: STP20NM50FD STF20NM50D - STB20NM50FD N-CHANNEL 500V - 0.22Ω - 20A TO-220/TO-220FP/D2PAK FDmesh Power MOSFET with FAST DIODE TYPE VDSS RDS(on) Rds(on)*Qg ID STP20NM50FD STF20NM50D STB20NM50FD 500V 500V 500V <0.25Ω <0.25Ω <0.25Ω 8.36 Ω*nC 8.36 Ω*nC
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STP20NM50FD
STF20NM50D
STB20NM50FD
O-220/TO-220FP/D2PAK
STF20NM50D
B20NM50FD
P20NM50FD
F20NM50D
P20NM50
STP20NM50FD
B20NM50
STB20NM50FD
ZVS phase-shift converters
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Untitled
Abstract: No abstract text available
Text: STP20NM50FD STB20NM50FD-1 N-CHANNEL 500V - 0.22Ω - 20A TO-220/I 2PAK FDmesh Power MOSFET with FAST DIODE TYPE STP20NM50FD STB20NM50FD-1 • ■ ■ ■ ■ ■ VDSS RDS(on) ID 500V 500V <0.25Ω <0.25Ω 20 A 20 A TYPICAL RDS(on) = 0.22Ω HIGH dv/dt AND AVALANCHE CAPABILITIES
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O-220/I
STP20NM50FD
STB20NM50FD-1
O-220
O-220)
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TO220I
Abstract: STP20NM50FD
Text: STP20NM50FD STB20NM50FD N-CHANNEL 500V - 0.22Ω - 20A TO-220/I PAK FDmesh Power MOSFET with FAST DIODE TYPE STP20NM50FD STB20NM50FD-1 • ■ ■ ■ ■ ■ VDSS RDS(on) ID 500V 500V <0.25Ω <0.25Ω 20 A 20 A TYPICAL RDS(on) = 0.22Ω HIGH dv/dt AND AVALANCHE CAPABILITIES
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O-220/I
STP20NM50FD
STB20NM50FD-1
STB20NM50FD
O-220
O-220)
TO220I
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STB20NM50FD-1
Abstract: SD20A STP20NM50FD
Text: Q * Be R t s g STP20NM50FD STB20NM50FD-1 n o ds N-CHANNEL 500V - 0.22Ω - 20A TO-220/I2PAK FDmesh Power MOSFET (with FAST DIODE) TYPE VDSS RDS(on) Rds(on)*Qg ID STP20NM50FD STB20NM50FD-1 500V 500V <0.25Ω <0.25Ω 8.36 Ω*nC 8.36 Ω*nC 20 A 20 A
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O-220/I2PAK
STP20NM50FD
STB20NM50FD-1
O-220
O-220)
STB20NM50FD-1
SD20A
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S-1380
Abstract: STB20NM50FD-1 STP20NM50FD ZVS phase-shift converters
Text: Q * Be R t s g STP20NM50FD STB20NM50FD-1 n o ds N-CHANNEL 500V - 0.22Ω - 20A TO-220/I2PAK FDmesh Power MOSFET (with FAST DIODE) TYPE VDSS RDS(on) Rds(on)*Qg ID STP20NM50FD STB20NM50FD-1 500V 500V <0.25Ω <0.25Ω 8.36 Ω*nC 8.36 Ω*nC 20 A 20 A
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STP20NM50FD
STB20NM50FD-1
O-220/I2PAK
S-1380
STB20NM50FD-1
STP20NM50FD
ZVS phase-shift converters
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P20NM50FD
Abstract: B20NM50FD P20NM50 STP20NM50FD B20NM50FD-1 STB20NM50FD-1 ZVS phase-shift converters
Text: STP20NM50FD STB20NM50FD-1 N-CHANNEL 500V - 0.22Ω - 20A TO-220/I2PAK FDmesh Power MOSFET with FAST DIODE TYPE VDSS RDS(on) Rds(on)*Qg ID STP20NM50FD STB20NM50FD-1 500V 500V <0.25Ω <0.25Ω 8.36 Ω*nC 8.36 Ω*nC 20 A 20 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.22Ω
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STP20NM50FD
STB20NM50FD-1
O-220/I2PAK
O-220
P20NM50FD
B20NM50FD
P20NM50
STP20NM50FD
B20NM50FD-1
STB20NM50FD-1
ZVS phase-shift converters
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S-1380
Abstract: STB20NM50FD-1 STP20NM50FD ZVS phase-shift converters 836 DIODE current
Text: Q * B • ■ ■ ■ ■ ■ R t es g STP20NM50FD STB20NM50FD-1 n o ds N-CHANNEL 500V - 0.22Ω - 20A TO-220/I 2PAK FDmesh Power MOSFET (with FAST DIODE) TYPE VDSS R DS(on) R ds(on)*Qg ID STP20NM50FD STB20NM50FD-1 500V 500V <0.25Ω <0.25Ω 8.36 Ω*nC
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STP20NM50FD
STB20NM50FD-1
O-220/I
S-1380
STB20NM50FD-1
STP20NM50FD
ZVS phase-shift converters
836 DIODE current
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STB20NM50FD
Abstract: ZVS phase-shift converters
Text: STB20NM50FD N-CHANNEL 500V - 0.20Ω - 20A D2PAK FDmesh Power MOSFET With FAST DIODE PRELIMINARY DATA TYPE STB20NM50FD n n n n n n VDSS RDS(on) ID 500V < 0.25Ω 20 A TYPICAL RDS(on) = 0.20Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED
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STB20NM50FD
STB20NM50FD
ZVS phase-shift converters
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PDF
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Untitled
Abstract: No abstract text available
Text: STB20NM50FD N-CHANNEL 500V - 0.20Ω - 20A D2PAK FDmesh Power MOSFET With FAST DIODE PRELIMINARY DATA TYPE STB20NM50FD • ■ ■ ■ ■ ■ VDSS RDS(on) ID 500V < 0.25Ω 20 A TYPICAL RDS(on) = 0.20Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED
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STB20NM50FD
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IXFN64N50PD2
Abstract: 64N50P SOT227B package 64N50
Text: IXFN64N50PD2 IXFN64N50PD3 PolarHVTM HiPerFET Power MOSFET Boost & Buck Configurations Ultra-fast FRED Diode VDSS ID25 RDS(on) trr 3 3 miniBLOC, SOT-227 B E153432 4 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500V = 50A Ω ≤ 85mΩ
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IXFN64N50PD2
IXFN64N50PD3
OT-227
E153432
200ns
64N50P
IXFN64N50PD2
SOT227B package
64N50
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IXFN64N50PD2
Abstract: IXFN64N50PD3
Text: IXFN64N50PD2 IXFN64N50PD3 PolarHVTM HiPerFET Power MOSFETs Boost & Buck Configurations Ultra-fast FRED Diode VDSS ID25 RDS(on) trr 3 3 miniBLOC E153432 4 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500V = 50A 85m 200ns
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IXFN64N50PD2
IXFN64N50PD3
E153432
200ns
IXFN64N50PD2
IXFN64N50PD3
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Untitled
Abstract: No abstract text available
Text: PolarHVTM HiPerFET Power MOSFET VDSS ID25 IXFN64N50PD2 IXFN64N50PD3 RDS on Boost & Buck Configurations (Ultra-fast FRED Diode) trr 3 3 miniBLOC, SOT-227 B E153432 4 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500V = 50A Ω ≤ 85mΩ
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IXFN64N50PD2
IXFN64N50PD3
OT-227
E153432
200ns
64N50P
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mosfet 500v 10A
Abstract: diode 500v 10A mosfet 10a 500v power diode 500v 10A 2SK1278
Text: 2SK1278 N-channel MOS-FET F-V Series 500V > Features 1,1Ω 10A 100W > Outline Drawing - Include Fast Recovery Diode - High Voltage - Low Driving Power > Applications - Motor Control - Inverters - Choppers > Maximum Ratings and Characteristics > Equivalent Circuit
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2SK1278
mosfet 500v 10A
diode 500v 10A
mosfet 10a 500v
power diode 500v 10A
2SK1278
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Untitled
Abstract: No abstract text available
Text: STW20NM50FD N-CHANNEL 500V - 0.22Ω - 20A TO-247 FDmesh Power MOSFET with FAST DIODE TYPE STW20NM50FD • ■ ■ ■ ■ ■ VDSS RDS(on) ID 500V <0.25Ω 20 A TYPICAL RDS(on) = 0.22Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE
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STW20NM50FD
O-247
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Untitled
Abstract: No abstract text available
Text: STW20NM50FD N-CHANNEL 500V - 0.22Ω - 20A TO-247 FDmesh Power MOSFET with FAST DIODE TYPE STW20NM50FD • ■ ■ ■ ■ ■ VDSS RDS(on) ID 500V <0.25Ω 20 A TYPICAL RDS(on) = 0.22Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE
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O-247
STW20NM50FD
O-247
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Untitled
Abstract: No abstract text available
Text: 2SK1278 N-channel MOS-FET F-V Series 500V > Features 1,1Ω 10A 100W > Outline Drawing - Include Fast Recovery Diode - High Voltage - Low Driving Power > Applications - Motor Control - Inverters - Choppers > Maximum Ratings and Characteristics > Equivalent Circuit
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2SK1278
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S-1380
Abstract: STW20NM50FD ZVS phase-shift converters
Text: STW20NM50FD N-CHANNEL 500V - 0.22Ω - 20A TO-247 FDmesh Power MOSFET with FAST DIODE TYPE STW20NM50FD • ■ ■ ■ ■ ■ VDSS RDS(on) ID 500V <0.25Ω 20 A TYPICAL RDS(on) = 0.22Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE
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STW20NM50FD
O-247
S-1380
STW20NM50FD
ZVS phase-shift converters
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PDF
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Untitled
Abstract: No abstract text available
Text: STW20NM50FD N-CHANNEL 500V - 0.22Ω - 20A TO-247 FDmesh Power MOSFET with FAST DIODE TYPE STW20NM50FD • ■ ■ ■ ■ ■ VDSS RDS(on) ID 500V <0.25Ω 20 A TYPICAL RDS(on) = 0.22Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE
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O-247
STW20NM50FD
O-247
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PDF
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Untitled
Abstract: No abstract text available
Text: STW20NM50FD N-CHANNEL 500V - 0.22Ω - 20A TO-247 FDmesh Power MOSFET with FAST DIODE TYPE STW20NM50FD • ■ ■ ■ ■ ■ VDSS RDS(on) ID 500V <0.25Ω 20 A TYPICAL RDS(on) = 0.22Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE
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STW20NM50FD
O-247
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IXFC16N50P
Abstract: 16n50 16N50P F16N f16n50
Text: IXFC16N50P PolarHVTM HiPerFET Power MOSFET VDSS ID25 RDS on trr (Electrically Isolated Back Surface) = = ≤ ≤ 500V 10A Ω 450mΩ 200ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode ISOPLUS 220TM E153432 Symbol Test Conditions Maximum Ratings
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IXFC16N50P
200ns
220TM
E153432
16N50P
5J-745
5-1-09-C
IXFC16N50P
16n50
F16N
f16n50
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Untitled
Abstract: No abstract text available
Text: PolarHVTM HiPerFET Power MOSFET VDSS ID25 IXFC16N50P RDS on trr (Electrically Isolated Back Surface) = = ≤ ≤ 500V 10A Ω 450mΩ 200ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode ISOPLUS 220TM E153432 Symbol Test Conditions Maximum Ratings
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IXFC16N50P
200ns
220TM
E153432
16N50P
5J-745
5-1-09-C
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Untitled
Abstract: No abstract text available
Text: Ordering number : EN1509A SFT1423 N-Channel Power MOSFET http://onsemi.com 500V, 2A, 4.9Ω, Single TP/TP-FA Features • • ON-resistance 4V drive • Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage
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EN1509A
SFT1423
PW10s)
PW10s,
A1509-9/7
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Untitled
Abstract: No abstract text available
Text: F U JI lä 'U J M s u 'ü ü U K 2SK1278 N-channel MOS-FET F-V Series 500V > Features - l,lß 10A 100W > Outline Drawing Include Fast Recovery Diode High Voltage Low Driving Power > Applications - Motor Control Inverters Choppers > Maximum Ratings and Characteristics
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OCR Scan
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2SK1278
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IPM30A V1.0
Abstract: No abstract text available
Text: FAST RECOVERY DIODE 30KF50E 30KF50B 33A /500V /trr : 70nsec FEATURES o Similar to TO- 247AC Case o Ultra — Fast Recovery ° Low Forward Voltage Drop o Low Power Loss, High Efficiency ° High Suiige Capability • 100 Volts thru 600 Volts Types Available
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30KF50E
30KF50B
/500V
70nsec
247AC
bblS123
IPM30A V1.0
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