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    POWER DEVICE K1120 Search Results

    POWER DEVICE K1120 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation

    POWER DEVICE K1120 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K1120NC

    Abstract: 10V 0911 K1120NC360
    Text: WESTCODE An Date:- 29 Mar, 2007 Data Sheet Issue:- 1 IXYS Company Provisional Data Medium Voltage Thyristor Types K1120NC360 to K1120NC420 Development Type No. KX192NC360-420 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VDRM Repetitive peak off-state voltage, note 1


    Original     		PDF K1120NC360 K1120NC420 KX192NC360-420 K1120NC420 K1120NC 10V 0911

    Untitled

    Abstract: No abstract text available
    Text: WESTCODE An Date:- 29 Mar, 2007 Data Sheet Issue:- 1 IXYS Company Provisional Data Medium Voltage Thyristor Types K1120NC360 to K1120NC420 Development Type No. KX192NC360-420 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VDRM Repetitive peak off-state voltage, note 1


    Original     		PDF K1120NC360 K1120NC420 KX192NC360-420 K1120NC420

    k1351

    Abstract: K3503FC520 k2623 k336 k2960 k1120 K2960TC520 K135 K1351VF650 K0349LG600
    Text: EXPANDED PRODUCT BRIEF ! uc ts rod P EW es 11 N utlin O EW 3N Medium Voltage Thyristors May 2008 Issue 6 Medium voltage applications place additional demands on phase control thryistors. As voltages increase, so do switching losses, stored charge and turn-off times to a point where they become significant in line frequency


    Original     		PDF D-68623 k1351 K3503FC520 k2623 k336 k2960 k1120 K2960TC520 K135 K1351VF650 K0349LG600

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2

    k1120

    Abstract: TRANSISTOR k1120 TRANSISTOR k1120 Package Toshiba 2sk1120 2SK1120
    Text: 2SK1120 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII.5 2SK1120 DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 1.5 Ω (typ.) High forward transfer admittance : |Yfs| = 4.0 S (typ.) Unit: mm


    Original     		PDF 2SK1120 k1120 TRANSISTOR k1120 TRANSISTOR k1120 Package Toshiba 2sk1120 2SK1120

    k1120

    Abstract: TRANSISTOR k1120 2SK1120 power device k1120 transistor 2SK1120 power transistor k1120 2SK1120 DATA
    Text: 2SK1120 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII.5 2SK1120 DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 1.5 Ω (typ.) High forward transfer admittance : |Yfs|= 4.0 S (typ.) Low leakage current


    Original     		PDF 2SK1120 k1120 TRANSISTOR k1120 2SK1120 power device k1120 transistor 2SK1120 power transistor k1120 2SK1120 DATA

    TRANSISTOR k1120

    Abstract: k1120 2SK1120 power device k1120
    Text: 2SK1120 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII.5 2SK1120 DC−DC Converter and Motor Drive Applications l Low drain−source ON resistance : RDS (ON) = 1.5 Ω (typ.) l High forward transfer admittance : |Yfs| = 4.0 S (typ.)


    Original     		PDF 2SK1120 TRANSISTOR k1120 k1120 2SK1120 power device k1120

    TRANSISTOR k1120

    Abstract: 2sk1120
    Text: 2SK1120 .5 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII 2SK1120 DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 1.5 Ω (typ.) High forward transfer admittance : |Yfs|= 4.0 S (typ.) Low leakage current


    Original     		PDF 2SK1120 TRANSISTOR k1120 2sk1120

    TRANSISTOR k1120

    Abstract: k1120
    Text: 2SK1120 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII.5 2SK1120 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 1.5 Ω (typ.) z High forward transfer admittance : |Yfs| = 4.0 S (typ.)


    Original     		PDF 2SK1120 2-16C1B TRANSISTOR k1120 k1120

    k1120

    Abstract: TRANSISTOR k1120 2SK1120
    Text: 2SK1120 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII.5 2SK1120 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 1.5 Ω (typ.) z High forward transfer admittance : |Yfs| = 4.0 S (typ.)


    Original     		PDF 2SK1120 k1120 TRANSISTOR k1120 2SK1120

    K1120

    Abstract: TRANSISTOR k1120 2SK1120 DATA 2SK1120
    Text: 2SK1120 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII.5 2SK1120 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 1.5 Ω (typ.) z High forward transfer admittance : |Yfs| = 4.0 S (typ.)


    Original     		PDF 2SK1120 K1120 TRANSISTOR k1120 2SK1120 DATA 2SK1120

    MS90311

    Abstract: MS90311-271 MS90310 MS25307 MIL-S-8834 MS21027 K851 MS21353 transistor D331 circuit diagram application ms25307-212
    Text: SECTION A TOGGLE SWITCHES Introduction Industrial – Environmentally Sealed Switches • Watertight seal per MIL-STD-108 • Ratings at 28VDC and 115VAC 60/400Hz • One, two and four pole configurations • Toggle and designerline actuators • Positive detent action


    Original     		PDF MIL-STD-108 28VDC 115VAC 60/400Hz MIL-S-3950 variati8867K11, 8867K611, MS90311 MS90311-271 MS90310 MS25307 MIL-S-8834 MS21027 K851 MS21353 transistor D331 circuit diagram application ms25307-212

    A42 B331

    Abstract: 96182 eaton eaton 96182 MS27903-1 ms90311 mil-s-8834 NEC k719 ms24547-1 MS25237 nec k591
    Text: Electric Distribution & Controls Switch Catalog Making the Best Better Traditional aerospace component suppliers are being asked to assume even greater levels of responsibility. One trend is that component manufacturers are being asked to increase their subsystem integration


    Original     		PDF TF300-5 A42 B331 96182 eaton eaton 96182 MS27903-1 ms90311 mil-s-8834 NEC k719 ms24547-1 MS25237 nec k591

    Untitled

    Abstract: No abstract text available
    Text: STOCKO CONTACT GmbH & Co. KG » Lötfreie Verbindungen« Solderless Terminals Ausgabe | Edition 2012 Ansetzgeräte Crimping Tools »Firmenprofil« Company profile Unsere Produkte: Our Products: Steckverbindersysteme mit Schneidklemm-, Crimp- oder Lötanschluss


    Original     		PDF H-5100 D-42327