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    POWER BJT PNP SPICE MODEL Search Results

    POWER BJT PNP SPICE MODEL Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MGN1S1208MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-8V GAN Visit Murata Manufacturing Co Ltd
    MGN1D120603MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-6/-3V GAN Visit Murata Manufacturing Co Ltd
    MGN1S1212MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-12V GAN Visit Murata Manufacturing Co Ltd
    MGN1S0508MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 5-8V GAN Visit Murata Manufacturing Co Ltd
    MGN1S0512MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 5-12V GAN Visit Murata Manufacturing Co Ltd

    POWER BJT PNP SPICE MODEL Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: GA06JT12-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


    Original     		GA06JT12-247 O-247AB GA06JT12 08E-47 26E-28 73E-10 86E-10 90E-2 PDF

    Untitled

    Abstract: No abstract text available
    Text: GA08JT17-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


    Original     		GA08JT17-247 O-247AB GA08JT17 73E-47 50E-27 77E-10 23E-10 50E-3 PDF

    Untitled

    Abstract: No abstract text available
    Text: GA03JT12-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


    Original     		GA03JT12-247 O-247AB GA03JT12 01E-49 00E-27 37E-10 97E-10 00E-3 PDF

    ACPL-322J

    Abstract: MIC4452YN
    Text: GA04JT17-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


    Original     		GA04JT17-247 O-247AB GA04JT17 22E-47 91E-27 37E-10 36E-10 00E-3 ACPL-322J MIC4452YN PDF

    IGBT DIVER IC

    Abstract: No abstract text available
    Text: GA16JT17-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


    Original     		GA16JT17-247 O-247AB GA16JT17 03E-47 719E-28 68E-10 72E-09 00E-03 IGBT DIVER IC PDF

    rpp1k1

    Abstract: No abstract text available
    Text: 0.18 m Process Family: XT018 0.18 Micron HV SOI CMOS Technology DESCRIPTION The XT018 series is X-FAB’s 0.18 micron Modular High-voltage SOI CMOS Technology. Based on SOI wafers and the industrial standard single poly with up to six metal layers 0.18-micron drawn gate


    Original     		XT018 XT018 18-micron rpp1k1 PDF

    Untitled

    Abstract: No abstract text available
    Text: GA03JT12-247 Normally – OFF Silicon Carbide Junction Transistor VDS RDS ON ID @ Tc=150°C hFE Tc=25°C Features Package •         RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area


    Original     		GA03JT12-247 O-247AB GA03JT12 01E-49 00E-27 37E-10 97E-10 00E-3 PDF

    power BJT 1000 volt vce

    Abstract: Catalog Bipolar Transistor bjt 500v transistor BJT BJT IC Vce 1.2 Volt led boost driver power bjt transistor 600v 7336 BJT IC Vce 5v transistor catalog 300 WATT
    Text: SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FZT560 ISSUE 1– NOVEMBER 1998 FEATURES * 500 Volt VCEO * 150mA continuous current * Ptot = 2 Watt C E C PARTMARKING DETAIL – FZT560 B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage


    Original     		OT223 150mA FZT560 27-Jun-2011 power BJT 1000 volt vce Catalog Bipolar Transistor bjt 500v transistor BJT BJT IC Vce 1.2 Volt led boost driver power bjt transistor 600v 7336 BJT IC Vce 5v transistor catalog 300 WATT PDF

    Untitled

    Abstract: No abstract text available
    Text: GA06JT12-247 Normally – OFF Silicon Carbide Junction Transistor VDS RDS ON ID @ Tc=150°C hFE Tc=25°C Features Package •         RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area


    Original     		GA06JT12-247 O-247AB GA06JT12 08E-47 26E-28 73E-10 86E-10 90E-2 PDF

    HCPL-322J

    Abstract: No abstract text available
    Text: GA08JT17-247 Normally – OFF Silicon Carbide Junction Transistor Features Package •         RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity


    Original     		GA08JT17-247 O-247AB GA08JT17 73E-47 50E-27 77E-10 23E-10 50E-3 HCPL-322J PDF

    power BJT DARLINGTON PAIR NPN

    Abstract: lcd inverter n mosfet cross reference BAT54A RF NPN Power BJT 100v l43 transistor transistor L42 ZBAT54C ZBAT54A Digital Transistors Cross Reference transistors diodes ics cross reference
    Text: BAT54 SERIES SOT23 SILICON EPITAXIAL SCHOTTKY BARRIER DIODES ISSUE 1– SEPTEMBER 1995 1 BAT54 SERIES ✪ 1 1 1 TYPICAL CHARACTERISTICS 1 10m 100m 3 1m 10m +125°C +85°C +25°C 1m +125°C 3 +85°C 100µ 10µ 100µ 10µ 0.15 0.3 0.45 0.6 Forward Voltage VF V


    Original     		BAT54 BAT54A BAT54S BAT54C 05-Oct-2010 1280x768px. power BJT DARLINGTON PAIR NPN lcd inverter n mosfet cross reference BAT54A RF NPN Power BJT 100v l43 transistor transistor L42 ZBAT54C ZBAT54A Digital Transistors Cross Reference transistors diodes ics cross reference PDF

    Application Note 41

    Abstract: phototransistor spice model 2N3904 npn bjt transistor power BJT PNP spice model bjt ce amplifier application 2n3904 npn transistor optocoupler spice model photo coupler application note 2N3904 TRANSISTOR using darlington amplifier common emitter bjt
    Text: VISHAY SEMICONDUCTORS www.vishay.com Optocouplers and Solid-State Relays Application Note 41 Faster Switching from Standard Couplers Optocouplers offer tremendous advantages in minimizing EMI and noise susceptibility. It is not an exaggeration to say that a healthy sprinkling of opto-isolation has often meant


    Original     		16-Mar-12 Application Note 41 phototransistor spice model 2N3904 npn bjt transistor power BJT PNP spice model bjt ce amplifier application 2n3904 npn transistor optocoupler spice model photo coupler application note 2N3904 TRANSISTOR using darlington amplifier common emitter bjt PDF

    phototransistor spice model

    Abstract: optocoupler, spice model, resistor pnp phototransistor BJT 2n3904 bjt ce amplifier application optocoupler spice model power BJT PNP spice model 2N3904 TRANSISTOR using darlington amplifier optocoupler basics optocoupler spice
    Text: Application Notes Vishay Semiconductors "Faster Switching" from "Standard Couplers" Optocouplers offer tremendous advantages in minimizing EMI and noise susceptibility. It is not an exaggeration to say that a healthy sprinkling of opto-isolation has often meant the


    Original     		11-Feb-08 phototransistor spice model optocoupler, spice model, resistor pnp phototransistor BJT 2n3904 bjt ce amplifier application optocoupler spice model power BJT PNP spice model 2N3904 TRANSISTOR using darlington amplifier optocoupler basics optocoupler spice PDF

    Untitled

    Abstract: No abstract text available
    Text: AN10909 Low VCEsat transistors in medium power load switch applications Rev. 2 — 13 March 2013 Application note Document information Info Content Keywords NXP low VCEsat transistors, performance in load switch applications Abstract Different low VCEsat transistors in load switch applications. Evaluation of


    Original     		AN10909 PDF

    layout 48 VOLT 150 AMP smps

    Abstract: NCP-1200 equivalent 12v 5 A battery charger smps schematic DC-DC CONVERTER china portable DVD circuit diagram SMPS 12V llc CS5322 CPU POWER SUPPLY CHIP 3589 Laser Diode 4 pin dvd burner MC33501 MC33503
    Text: Q U A R T E R L Y T E C H N O L O G Y A N D A P P L I C AT I O N S M A G A Z I N E ON-Display FIRST QUARTER 2001 Vol. 2, No. 1 This Quarter. FEATURES A Look at Where We Are Power Supply Design Software 3 29 POWER MANAGEMENT World’s First Single-Cell Battery Powered


    Original     		ONDISPLAY1Q01/D layout 48 VOLT 150 AMP smps NCP-1200 equivalent 12v 5 A battery charger smps schematic DC-DC CONVERTER china portable DVD circuit diagram SMPS 12V llc CS5322 CPU POWER SUPPLY CHIP 3589 Laser Diode 4 pin dvd burner MC33501 MC33503 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N7636-GA Normally – OFF Silicon Carbide Junction Transistor Features Package •           RoHS Compliant 225°C maximum operating temperature Electrically Isolated Base Plate Gate Oxide Free SiC Switch Exceptional Safe Operating Area


    Original     		2N7636-GA 2N7636 8338E-48 0733E-26 37E-10 97E-10 50E-02 2N7636-GA PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N7638-GA Normally – OFF Silicon Carbide Junction Transistor VDS = 600 V RDS ON = 170 mΩ ID (Tc = 25°C) = 20 A hFE (Tc = 25°C) = Features Package •           RoHS Compliant 225°C maximum operating temperature Electrically Isolated Base Plate


    Original     		2N7638-GA 2N7638 8338E-48 0733E-26 73E-10 86E-10 90E-2 2N7638-GA PDF

    2n2222 spice model

    Abstract: No abstract text available
    Text: 2N7637-GA Normally – OFF Silicon Carbide Junction Transistor VDS = 600 V RDS ON = 170 mΩ ID (Tc = 25°C) = 20 A hFE (Tc = 25°C) = Features Package •           RoHS Compliant 225°C maximum operating temperature Electrically Isolated Base Plate


    Original     		2N7637-GA 2N7637 8338E-48 0733E-26 73E-10 86E-10 90E-2 2N7637-GA 2n2222 spice model PDF

    CMOS

    Abstract: MICRON RESISTOR Mos MOS RM3 power BJT PNP spice model spice gate drive module mos rm3 data ESD "p-well" n-well" CMOS spice model ne3 MOS3ST varactor diode SPICE model
    Text: 0.18 µm CMOS Process XC018 MIXED-SIGNAL FOUNDRY EXPERTS 0.18 Micron Modular RF enabled CMOS Logic and Analog Technology 0.18-micron drawn gate length N-well process, modules are also available for metal-insulatormetal capacitors, high resistive poly, dual gate


    Original     		XC018 18-micron XC018 CMOS MICRON RESISTOR Mos MOS RM3 power BJT PNP spice model spice gate drive module mos rm3 data ESD "p-well" n-well" CMOS spice model ne3 MOS3ST varactor diode SPICE model PDF

    diode 0A70

    Abstract: GA05JT01-46
    Text: GA05JT01-46 Normally – OFF Silicon Carbide Junction Transistor Features Package •          RoHS Compliant 225°C maximum operating temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity


    Original     		GA05JT01-46 GA05JT01 8338E-48 0733E-26 16E-10 021E-10 050E-2 diode 0A70 GA05JT01-46 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N7639-GA Normally – OFF Silicon Carbide Junction Transistor VDS = 600 V RDS ON = 60 mΩ ID (Tc = 25°C) = 32 A hFE (Tc = 25°C) = Features Package •           RoHS Compliant 225°C maximum operating temperature Electrically Isolated Base Plate


    Original     		2N7639-GA 2N7639-GA 8338E-48 0733E-26 2281E-10 33957E-9 20E-03 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N7635-GA Normally – OFF Silicon Carbide Junction Transistor Features Package •           RoHS Compliant 225°C maximum operating temperature Electrically Isolated Base Plate Gate Oxide Free SiC Switch Exceptional Safe Operating Area


    Original     		2N7635-GA 2N7635 8338E-48 0733E-26 37E-10 97E-10 50E-02 2N7635-GA PDF

    AN10909

    Abstract: TRANSISTORS BJT list npn pnp transistor bipolar cross reference PBSS5320T Y parameters of transistors BC847 PBSS302PZ PBSS4021NT PBSS4021PT PBSS4041PT
    Text: AN10909 Low VCEsat transistors in medium power loadswitch applications Rev. 1 — 4 June 2010 Application note Document information Info Content Keywords NXP’s low VCEsat transistors, performance in loadswitch applications Abstract Different low VCEsat transistors in loadswitch applications. Evaluation of


    Original     		AN10909 AN10909 TRANSISTORS BJT list npn pnp transistor bipolar cross reference PBSS5320T Y parameters of transistors BC847 PBSS302PZ PBSS4021NT PBSS4021PT PBSS4041PT PDF

    Untitled

    Abstract: No abstract text available
    Text: GA05JT03-46 Normally – OFF Silicon Carbide Junction Transistor Features Package •          RoHS Compliant 225°C maximum operating temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity


    Original     		GA05JT03-46 GA05JT03 8338E-48 0733E-26 16E-10 021E-10 050E-2 PDF