Untitled
Abstract: No abstract text available
Text: SLNA-180-30-35-SMA DATA SHEET 500 MHz to 18 GHz, Medium Power Broadband Amplifier with 15 dBm, 33 dB Gain and SMA SLNA-180-30-35-SMA is a 15 dBm power amplifier designed for operation in the 0.5 GHz to 18 GHz frequency range. The amplifier utilizes high power devices that
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SLNA-180-30-35-SMA
SLNA-180-30-35-SMA
12Volts,
220mA)
-broadband-amplifier-slna-180-30-35-sma-p
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HMMC-5003
Abstract: agilent HMMC
Text: 4 GHz Wideband Preamplifier/Amplifier Technical Data HMMC-5003 Features • Frequency Range: DC – 4 GHz • Flat Response: ±0.75 dB 5 MHz – 4 GHz • High Gain: 11 dB • High Isolation: -37 dB • Return Loss: Input -15 dB Output -15 dB • High Power Output:
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HMMC-5003
HMMC-5003
5968-4445E
agilent HMMC
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HMC-C020
Abstract: HMC-C021
Text: HMC-C021 v01.0906 WIDEBAND POWER AMPLIFIER MODULE, 21 - 31 GHz AMPLIFIERS 1 Features Gain: 15 dB @ 27 GHz P1dB Output Power: +24 dBm @ 27 GHz Noise Figure: 5 dB @ 27 GHz Spurious-Free Operation Typical Applications Regulated Supply and Bias Sequencing Hermetically Sealed Module
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HMC-C021
HMC-C020
HMC-C021
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2.4 ghz 4 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM
Abstract: 2.4 ghz 5 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM HMC-C008 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM microwave isolator 15 watt power supply circuit diagram
Text: HMC-C008 v03.1205 AMPLIFIERS - CONNECTORIZED MODULES 9 15 WATT POWER AMPLIFIER MODULE, 1.8 - 2.2 GHz Features P1dB Output Power: 15 Watts from 1.8 to 2.2 GHz Gain: 40 dB min Noise Figure: 6 dB Thermally Compensated and Protected Reverse Polarity Protected
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HMC-C008
HMC-C008
MIL-C-5541,
HMC-C008HV115
HMC-C008HV230
2.4 ghz 4 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM
2.4 ghz 5 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM
2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM
microwave isolator
15 watt power supply circuit diagram
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isolator 2 2.1 GHz
Abstract: No abstract text available
Text: OBSOLETE PRODUCT HMC-C008 v05.1007 15 WATT POWER AMPLIFIER MODULE, 1.8 - 2.2 GHz AMPLFIERS Features P1dB Output Power: 15 Watts from 1.8 to 2.2 GHz Gain: 40 dB min Noise Figure: 6 dB Thermally Compensated and Protected Reverse Polarity Protected TTL DC Power Enable
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HMC-C008
HMC-C008
6061-T6
MIL-C-5541,
HMC-C008HV115
HMC-C008HV230
isolator 2 2.1 GHz
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UPC2708
Abstract: UPC2708T DB815 UPC2708T-E3 UPC2711 UPC2711T UPC2711T-E3
Text: 3 GHz SILICON MMIC WIDE-BAND AMPLIFIER FEATURES UPC2708T UPC2711T GAIN vs. FREQUENCY 20 • WIDE FREQUENCY RESPONSE: 3 GHz • HIGH GAIN: 15 dB UPC2708T UPC2708 15 Gain, GS (dB) • SATURATED OUTPUT POWER: +10 dBm (UPC2708T) • INTERNAL CURRENT REGULATION MINIMIZES GAIN
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UPC2708T
UPC2711T
UPC2708T)
UPC2708
UPC2711
UPC2708T
UPC2711T
UPC2708
DB815
UPC2708T-E3
UPC2711
UPC2711T-E3
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HMC415LP3
Abstract: No abstract text available
Text: HMC415LP3 v02.0604 MICROWAVE CORPORATION GaAs InGaP HBT MMIC POWER AMPLIFIER, 4.9 - 5.9 GHz AMPLIFIERS - SMT 8 Typical Applications Features This amplifier is ideal for use as a power amplifier for 4.9 - 5.9 GHz applications: Gain: 20 dB • 802.11a WLAN 3.7% EVM @ Pout = +15 dBm
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HMC415LP3
HMC415LP3
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W351
Abstract: DB161 QPAV8a2S RF S-parameters
Text: 40 GHz Power Amplifier QPAV8a2S.1R* MMIC Features G G G G G G G G G Power Amplifier. 15 dB Gain min Frequency Range : 39-41 GHz 50 Ω Zin / Zout >10 dB Input / Output Return Loss > 29 dBm Output power at 1dB gain compression Chip size : 3.8 mm X 2.5 mm
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HMC407MS8G
Abstract: amplifier TRANSISTOR 12 GHZ 1202 transistor
Text: HMC407MS8G v01.1202 MICROWAVE CORPORATION GaAs InGaP HBT MMIC POWER AMPLIFIER, 5.0 - 7.0 GHz AMPLIFIERS - SMT 8 Typical Applications Features This amplifier is ideal for use as a power amplifier for 5.0 - 7.0 GHz applications: Gain: 15 dB • UNII 28% PAE
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HMC407MS8G
HMC407MS8G
amplifier TRANSISTOR 12 GHZ
1202 transistor
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amplifier TRANSISTOR 12 GHZ
Abstract: smt transistor HMC407MS8G
Text: HMC407MS8G v00.0701 MICROWAVE CORPORATION GaAs InGaP HBT MMIC POWER AMPLIFIER, 5.0 - 7.0 GHz AMPLIFIERS - SMT 1 Typical Applications Features This amplifier is ideal for use as a power amplifier for 5.0 - 7.0 GHz applications: Gain: 15 dB • UNII 28% PAE
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HMC407MS8G
HMC407MS8G
amplifier TRANSISTOR 12 GHZ
smt transistor
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ZO 103 MA 75 623
Abstract: HMMC-5620 hp 6531
Text: 6 – 20 GHz High-Gain Amplifier Technical Data HMMC-5620 Features • Wide-Frequency Range: 6 – 20 GHz • High Gain: 17 dB • Gain Flatness: ± 1.0 dB • Return Loss: Input -15 dB Output -15 dB • Single Bias Supply Operation • Low DC Power Dissipation:
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HMMC-5620
HMMC-5620
ZO 103 MA 75 623
hp 6531
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TMA-18-6003
Abstract: No abstract text available
Text: TMA-18-6003 Amplifier 6 GHz - 18 GHz This Amplifier offers exceptional performance over the band 6 GHz to 18 GHz with 18 dBm P1dB output power and 15 dB Gain. Teledyne Microwave amplifiers are balanced or feedback designs and manufactured with the latest MIC & MMIC
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TMA-18-6003
TMA-18-6003
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6003
Abstract: CMA-18-6003
Text: CMA-18-6003 Amplifier 6 GHz - 18 GHz This Amplifier offers exceptional performance over the band 6 GHz to 18 GHz with 18 dBm P1dB output power and 15 dB Gain. Teledyne Microwave amplifiers are balanced or feedback designs and manufactured with the latest MIC & MMIC
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CMA-18-6003
6003
CMA-18-6003
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Untitled
Abstract: No abstract text available
Text: Model SM1720-42 1.7-2.0 GHz 15 Watt Linear Amplifier The SM1720-42 is a solid state GaAs amplifier designed for various wireless applications. This amplifier operates from 1.7-2.0 GHz, provides 50 dB of gain, ± 0.5 dB gain flatness over the full band, and +42 dBm of output power at its 1
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SM1720-42
SM1720-42
-14dB
-14dB
12VDC
12VDC
42dBm
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CGM-18-2004
Abstract: No abstract text available
Text: CGM-18-2004 Module Amplifier 2 GHz - 18 GHz This Module Amplifier offers exceptional performance over the band 2 GHz to 18 GHz with 12 dBm P1dB output power and 15 dB Gain. Teledyne Microwave amplifiers are balanced or feedback designs and manufactured with the latest MIC & MMIC
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CGM-18-2004
CGM-18-2004
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CGM-04-0006
Abstract: No abstract text available
Text: CGM-04-0006 Module Amplifier 0.5 GHz - 4 GHz This Module Amplifier offers exceptional performance over the band 0.5 GHz to 4 GHz with 15 dBm P1dB output power and 33 dB Gain. Teledyne Microwave amplifiers are balanced or feedback designs and manufactured with the latest MIC & MMIC
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CGM-04-0006
CGM-04-0006
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HMC-C023
Abstract: No abstract text available
Text: HMC-C023 v00.1005 WIDEBAND POWER AMPLIFIER MODULE, 2 - 20 GHz AMPLIFIERS - CONNECTORIZED MODULES 9 Features Gain: 15 dB @ 10 GHz P1dB Output Power: +26 dBm @ 10 GHz Spurious-Free Operation Regulated Supply and Bias Sequencing Typical Applications Hermetically Sealed Module
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HMC-C023
HMC-C023
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CGM-04-0002
Abstract: No abstract text available
Text: CGM-04-0002 Module Amplifier 0.5 GHz - 4 GHz This Module Amplifier offers exceptional performance over the band 0.5 GHz to 4 GHz with 15 dBm P1dB output power and 11.5 dB Gain. Teledyne Microwave amplifiers are balanced or feedback designs and manufactured with the latest MIC & MMIC
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CGM-04-0002
CGM-04-0002
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CGM-18-2005
Abstract: No abstract text available
Text: CGM-18-2005 Module Amplifier 2 GHz - 18 GHz This Module Amplifier offers exceptional performance over the band 2 GHz to 18 GHz with 11 dBm P1dB output power and 15 dB Gain. Teledyne Microwave amplifiers are balanced or feedback designs and manufactured with the latest MIC & MMIC
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CGM-18-2005
CGM-18-2005
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET S8851 Power GaAs FETs Chip Form Features • High power - PidB = 24 dBm a tf = 15 GHz • High gain - G-|dB —8 dB at f = 15 GHz • Suitable for Ku-Band amplifier • Ion implantation RF Performance Specifications (Ta = 25° C)
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S8851
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S8851
Abstract: S885T
Text: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR S8851 TECHNICAL DATA FEATURES: • HIGH POWER P^dB“ 24 dBm at f = 15 GHz ■ ■ HIGH GAIN G1dB = 8 dB ■ SUITABLE FOR Ku-BAND AMPLIFIER ION IMPLANTATION at f = 15 GHz RF PERFORMANCE SPECIFICATIONS Ta = 25° C
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S8851
S885T
15GHz
S8851
S885T
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S8855
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR S8855 TECHNICAL DATA FEATURES: • ■ HIGH POWER p1 d B ~ 31.5 dBm at f = 15 GHz HIGH GAIN G|dB = 6.5 dB at f = 15 GHz SUITABLE FOR Ku-BAND AMPLIFIER ION IMPLANTATION RF PERFORMANCE SPECIFICATIONS Ta = 25° C
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S8855
15GHz
-S8855-
S8855
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PC2708T
Abstract: No abstract text available
Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT «PC2708T 2.9 GHz MIDDLE POWER WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT FEATURES • High power gain 15 dB TYP. @ f = 1 GHz Excellent frequency response: 2.9 Ghz TYP. @ 3 dB down below the gain at 0.1 GHz
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PC2708T
//PC2708T-E3
P15-00-3
WS60-00-1
C10535E)
PC2708T
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Untitled
Abstract: No abstract text available
Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT //PC2708T 2.9 GHz MIDDLE POWER WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT FEATURES • High power gain : 15 dB TYP. @ f = 1 GHz • Excellent frequency response: 2.9 Ghz TYP. @ 3 dB down below the gain at 0.1 GHz
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uPC2708T
2708T-E3
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