fusible resistor
Abstract: fusible fusible fused resistor polysilicon fuse resistor AAAA fusible fuse resistor
Text: Fusible Links June 1995 Features Applications • Made with Polysilicon one minimum square ~ 50W • Resistor Trimming • Programming Applications • Easy and Fast Tester Programmable (~10 ms) • Device Identification / Serial Number • Typical Power Supply Required for 2 µm width:
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variable resistor 5k
Abstract: AN1425 Fixed resistor 10K variable resistor 0.5 a dcp 5k variable resistor variable resistor 47
Text: Get Precision Performance from a Digitally Controlled Potentiometer DCP Application Note September 29, 2008 Typical resistance accuracy of the polysilicon DCP is in ±20% range. However, the relative accuracy or matching of the resistive elements in the particular resistor array is
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AN1425
variable resistor 5k
Fixed resistor
10K variable resistor
0.5 a dcp
5k variable resistor
variable resistor 47
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fusible
Abstract: fusible fuse resistor Links passivation resistor trimming
Text: Fusible Links October 1995 Features Applications • • • • • • • Made with Polysilicon one minimum square ~ 50ohms Easy and Fast Tester Programmable (~10 ms) Typical Power Supply Required for 2 µm width: 10 volts Proven Reliability Resistor Trimming
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50ohms)
fusible
fusible fuse resistor
Links
passivation
resistor trimming
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AN1425
Abstract: variable resistor 100k with 3 terminals ISL22317
Text: Get Precision Performance from a Digitally Controlled Potentiometer DCP Application Note June 5, 2009 Typical resistance accuracy of the polysilicon DCP is in ±20% range. However, the relative accuracy or matching of the resistive elements in the particular resistor array is
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AN1425
variable resistor 100k with 3 terminals
ISL22317
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polysilicon
Abstract: Thin Film Resistors SiCr analog polysilicon resistor Thin Film Resistors SiCr
Text: Low TCR Precision Polysilicon Resistors June 1995 Description Features • TCR less than 100 ppm/°C, -40 to +85°C . • Target sheet resistance between 300 and 500Ω/sq. (depending on process used). • Contact resistance typically less than 100Ω (for
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500/sq.
30-50ppm/C
100ppm/C)
polysilicon
Thin Film Resistors SiCr analog
polysilicon resistor
Thin Film Resistors SiCr
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polysilicon
Abstract: Thin Film Resistors SiCr Thin Film Resistors SiCr analog
Text: Low TCR Precision Polysilicon Resistors February 1996 Description Features • • • • • • • TCR less than 100 ppm/°C, -40 to +85°C . Target sheet resistance between 250 and 500Ω/sq. (depending on process used). Contact resistance typically less than
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500/sq.
polysilicon
Thin Film Resistors SiCr
Thin Film Resistors SiCr analog
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polysilicon resistor
Abstract: High Speed Amplifiers Complementary Bipolar Process vertical PNP DS00107
Text: HJV Complementary Bipolar Process Data Sheet DS00107 / June 2010 HJV is a high voltage version of the RF- HJ double polysilicon trench isolated complementary bipolar process, optimized for very high linearity applications. Key parameters minimum geometry device
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DS00107
polysilicon resistor
High Speed Amplifiers
Complementary Bipolar Process
vertical PNP
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BLW898
Abstract: philips resistor 2322 156 795-820 a 1757 transistor SOT171 Tekelec TO
Text: Philips Semiconductors Product specification UHF linear power transistor BLW898 FEATURES PINNING SOT171A • Internal input matching for wideband operation and high power gain PIN • Polysilicon emitter ballasting resistors for an optimum temperature profile
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BLW898
OT171A
OT171A
711Dfl2ti
BLW898
philips resistor 2322 156
795-820
a 1757 transistor
SOT171
Tekelec TO
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smd transistor pnp 591
Abstract: smd transistor xf philips 2322 734 transistor bd139 philips SMD resistor 805 smd transistor 912 smd L17 npn bd139 smd SMD transistor L17 912 smd transistor
Text: Philips Semiconductors Product specification UHF linear push-pull power transistor FEATURES BLV857 PINNING SOT324B • Internal input matching for an optimum wideband capability and high gain • Polysilicon emitter ballasting resistors for an optimum temperature profile
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BLV857
OT324B
smd transistor pnp 591
smd transistor xf
philips 2322 734
transistor bd139
philips SMD resistor 805
smd transistor 912
smd L17 npn
bd139 smd
SMD transistor L17
912 smd transistor
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bvc62
Abstract: transistor BD 139 Transistor 5332 bvc62 smd philips 2322 734 UT70-25 smd transistor k2 2222 500 16641 transistor BD B1 SMD u 9330
Text: Philips Semiconductors Product specification UHF linear push-pull power transistor FEATURES BLV859 PINNING SOT262B • Double internal input and output matching for an optimum wideband capability and high gain • Polysilicon emitter ballasting resistors for an optimum
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BLV859
OT262B
711002b
OT262B.
711Dfi5b
bvc62
transistor BD 139
Transistor 5332
bvc62 smd
philips 2322 734
UT70-25
smd transistor k2
2222 500 16641
transistor BD B1 SMD
u 9330
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acs 721
Abstract: 24-Pin Plastic DIP
Text: NEC JIPD4363 16,364 X 4-Bit Static CMOS RAM NEC Electronics Inc. Description Pin Configuration The fiPD4363 is a 16,384-word by 4-bit static RAM fabricated with advanced silicon-gate technology. A unique design using CMOS peripheral circuits and Nchannel memory cells with polysilicon resistors makes
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uPD4363
fiPD4363
384-word
fjPD4363
pPD4363
300-mil,
24-pin
aHH-62729
jjPD4363
acs 721
24-Pin Plastic DIP
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Untitled
Abstract: No abstract text available
Text: NEC NEC Electronics Inc. PPD4363B 16,384 X 4-Bit Static CMOS RAM Description Pin Configuration The /JPD4363B is a 16,384-word by 4-bit static RAM fabricated with advanced silicon-gate technology. A unique design using CMOS peripheral circuits and N-channel memory cells with polysilicon resistors
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PPD4363B
/JPD4363B
384-word
24-Pin
300-mil,
83IH-Â
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NEC 28PIN DIP
Abstract: No abstract text available
Text: SEC fiPD43258A 32,768 X 8-Bit Static CMOS RAM NEC Electronics Inc. Description Pin Configurations The /iPD43258A is a 32,768-word by 8-bit static RAM fabricated with advanced silicon-gate technology. Its unique design uses CMOS peripheral circuits and Nchannel memory cells with polysilicon resistors to
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uPD43258A
/iPD43258A
768-word
the//PD43258A
/PD43258A
28-pin
83YL-7199B
pPD43258A
J1PD43258A
NEC 28PIN DIP
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Untitled
Abstract: No abstract text available
Text: NEC JUPD4363 16,364 x 4-Bit Static CMOS RAM NEC Electronics Inc. Description Pin Configuration The iiPD4363 is a 16,384-word by 4-bit static RAM fabricated with advanced silicon-gate technology. A unique design using CMOS peripheral circuits and Nchannel memory cells with polysilicon resistors makes
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JUPD4363
iiPD4363
384-word
pPD4363
24-Pin
jiPD4363
300-mil,
24-pin
63JH-6272B
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Untitled
Abstract: No abstract text available
Text: SEC fiPD43256B 32,768 X 8-Bit Static CMOS RAM NEC Electronics Inc. Description Pin Configuration The /JPD43256B is a 32,768-word by 8-bit static RAM fabricated with advanced silicon-gate technology. Its unique design uses CMOS peripheral circuits and Nchannel memory cells with polysilicon resistors to
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fiPD43256B
/JPD43256B
768-word
the/KPD43256B
28-Pin
UPD43256B
Z-70L
83YL-7194A
43256B
Z-55L
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d43256agx
Abstract: No abstract text available
Text: MEC JUPD43256A 32,768 X 8-Bit Static CMOS RAM NEC Electronics Inc. Description Pin Configurations The jtPD43256A is a 32,768-word by 8-bit static RAM fabricated with advanced siiicon-gate technology. Its unique design uses CMOS peripheral circuits and Nchannel memory cells with polysilicon resistors to make
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JUPD43256A
jtPD43256A
768-word
/iPD43256A
28-Pln
jiPD43256A
-6436B
ffPD43256A
3IH-6438B
fiPD43256A
d43256agx
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PD4361
Abstract: UPD4361
Text: fiPD4361 65,536 X 1-Bit Static CMOS RAM NEC Electronics Inc. Description Pin Configurations The ftPD4361 is a 65,536-word by 1-bit static RAM fabricated with advanced silicon-gate technology. CMOS peripheral circuits and N-channel memory cells with polysilicon resistors make the ¿¿PD4361 a high
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uPD4361
ftPD4361
536-word
PD4361
22-pin
nPD436lC-L
63IH-5775B
PD4361
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d431000ag
Abstract: No abstract text available
Text: SEC JJPD431000A 131,072 X 8-Bit Static CMOS RAM NEC Electronics Inc. Description Pin Configurations The pPD431000A is a 131,072-word by 8-bit static RAM fabricated with advanced silicon-gate technology. CMOS peripheral circuits and N-channel memory cells with polysilicon resistors make the /JPD431000A a high
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JJPD431000A
pPD431000A
072-word
/JPD431000A
32-pin
32-pin
fiPD431000A
PPD431000A
d431000ag
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Untitled
Abstract: No abstract text available
Text: SEC JJPD43253B 65,536 x 4-Bit Static CMOS RAM NEC Electronics Inc. Description Pin Configurations The ¿JPD43253B is a 65,536-word by 4-bit static RAM fabricated with advanced silicon-gate technology. CMOS peripheral circuits and N-channel memory cells with polysilicon resistors make the /JPD43253B a high
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JJPD43253B
JPD43253B
536-word
/JPD43253B
28-Pin
fiPD432S3B
63IH-6776B
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Untitled
Abstract: No abstract text available
Text: JHPD43259A 32,768 X 9-Bit Static CMOS RAM W Æ jW NEC Electronics Inc. Description Pin Configuration The /JPD43259A is a 32,768-word by 9-bit static RAM fabricated with advanced silicon-gate technology. Its unique design uses CMOS peripheral circuits and Nchannel memory cells with polysilicon resistors to
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JHPD43259A
/JPD43259A
768-word
/iPD43259A
32-Pin
/JPD43259A
JJPD43259A
JUPD43259A
S3IH-64368
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PD43256A
Abstract: D43256AG 43256ac D43256A C-15LL D43256 upd43256a
Text: NEC ffPD43256A 32,768 X 8-Bit Static CMOS RAM NEC Electronics Inc. Description Pin Configurations The #iPD43256A is a 32,768-word by 6 -bit static RAM fabricated with advanced silicon-gate technology. Its unique design uses CMOS peripheral circuits and Nchannel memory cells with polysilicon resistors to make
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uPD43256A
83IH-6258A
iPD43256A
768-word
pPD43256A
JJPD43256A
83IH-6438B
ffPD43256A
JIPD43256A
PD43256A
D43256AG
43256ac
D43256A
C-15LL
D43256
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d43256ac
Abstract: upd43256a 43256A 83IH-W07A C-15L d43256a 0/JJPD43256A
Text: SEC ffPD43256A 32,768 X 8-Bit Static CMOS RAM NEC Electronics Inc. Description Pin Configurations The fiPD43256A is a 32,768-word by 8-bit static RAM fabricated with advanced sllicon-gate technology. Its unique design uses CMOS peripheral circuits and Nchannel memory cells with polysilicon resistors to make
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uPD43256A
28-Pln
fiPD43256A
768-word
iPD43256A
83IH-64368
ffPD43256A
d43256ac
43256A
83IH-W07A
C-15L
d43256a
0/JJPD43256A
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D43256B
Abstract: D43256
Text: NEC JHPD43256B 32,768 x 8-Bit Static CMOS RAM NEC Electronics Inc. Description Pin Configurations The f j PD43256B is a 32,768-word by 8-bit static RAM fabricated with advanced silicon-gate technology. Its unique design uses CMOS peripheral circuits and Nchannel memory cells with polysilicon resistors to
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uPD43256B
28-Pin
PD43256B
768-word
pPD43256B
iPD43256B
32-pin
83IH-6306A
D43256B
D43256
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Untitled
Abstract: No abstract text available
Text: IRFU410A Advanced Power MOSFET IRFU410A B V • Improved Inductive Ruggedness ■ Rugged Polysilicon Gate Cell Structure ■ Fast Switching Times ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Improved High Temperature Reliability
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IRFU410A
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