DS00107
Abstract: ic1a polysilicon resistor High Speed Amplifiers IC 1A
Text: HJW Complementary Bipolar Process Data Sheet DS00107 / June 2010 HJW is a high voltage version of the RF-HJ double polysilicon trench isolated complementary bipolar process with high Bvebo > 4.5 V, suitable for very high linearity applications. Key parameters minimum geometry device
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PDF
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DS00107
ic1a
polysilicon resistor
High Speed Amplifiers
IC 1A
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polysilicon resistor
Abstract: High Speed Amplifiers Complementary Bipolar Process vertical PNP DS00107
Text: HJV Complementary Bipolar Process Data Sheet DS00107 / June 2010 HJV is a high voltage version of the RF- HJ double polysilicon trench isolated complementary bipolar process, optimized for very high linearity applications. Key parameters minimum geometry device
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Original
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PDF
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DS00107
polysilicon resistor
High Speed Amplifiers
Complementary Bipolar Process
vertical PNP
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2417K4A
Abstract: EIA-625 GR-253-CORE
Text: Data Sheet, Rev. 1 August 2001 NetLight 2417K4A 1300 nm Laser 2.5 Gbits/s Transceiver • TTL signal-detect output ■ Low power dissipation ■ Single 3.3 V power supply ■ LVPECL/CML compatible data inputs and CML compatible data outputs ■ ■ Operating temperature range: 0 °C to
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PDF
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2417K4A
RJ-45
OC-48,
f3201
DS00-107OPTO-1
DS00-107OPTO)
EIA-625
GR-253-CORE
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2417K4A
Abstract: EIA-625
Text: Advance Data Sheet January 2000 NetLight 2417K4A 1300 nm Laser 2.5 Gbits/s Transceiver • Low power dissipation ■ Single 3.3 V power supply ■ LVPECL/CML compatible data inputs and CML compatible data outputs ■ ■ Operating temperature range: 0 °C to
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Original
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PDF
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2417K4A
RJ-45
OC-48,
10-pin
DS00-107OPTO
EIA-625
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