PNZ323B
Abstract: No abstract text available
Text: PIN Photodiodes PNZ323B PIN Photodiode Not soldered 1.5 max. 6.0±0.2 7.5±0.2 2 5.5±0.2 1.0 For optical control systems Unit : mm 4.6±0.2 2.3 Chip Features 22.25±1.0 High sensitivity, high reliability Peak sensitivity wavelength matched with infrared light emitting
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PNZ323B
PNZ323B
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PN323B
Abstract: PNZ323B
Text: PIN Photodiodes PNZ323B PN323B Silicon planar type For optical control systems Unit: mm 4.6±0.2 Chip Not soldered 1.5 max. (1.0) 5.5±0.2 6.0±0.2 (0.5) 1.5±0.2 22.25±1.0 Ta = 25°C Rating Unit Reverse voltage VR 30 V Power dissipation PD 100 mW Operating ambient temperature
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PNZ323B
PN323B)
PN323B
PNZ323B
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Untitled
Abstract: No abstract text available
Text: PIN Photodiodes PNZ323B PN323B Silicon planar type For optical control systems Unit: mm 4.6±0.2 Chip Not soldered 1.5 max. (1.0) 5.5±0.2 (0.5) 1.5±0.2 (2-0.6±0.1) 22.25±1.0 31.25±1.0 (1.32) Ta = 25°C (1.5) • Absolute Maximum Ratings 6.0±0.2 • Fast response which is well suited to high speed modulated light
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PNZ323B
PN323B)
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PNZ323B application
Abstract: PN323B PNZ323B
Text: This product complies with the RoHS Directive EU 2002/95/EC . PIN Photodiodes PNZ323B (PN323B) Silicon planar type For optical control systems • Features ue pl d in ea an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low
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2002/95/EC)
PNZ323B
PN323B)
PNZ323B application
PN323B
PNZ323B
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PN323B
Abstract: PNZ323B
Text: PIN Photodiodes PNZ323B PN323B PIN Photodiode Not soldered 1.5 max. 6.0±0.2 7.5±0.2 (2) 5.5±0.2 1.0 For optical control systems Unit : mm 4.6±0.2 2.3 Chip Features 22.25±1.0 High sensitivity, high reliability Peak sensitivity wavelength matched with infrared light emitting
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PNZ323B
PN323B)
PN323B
PNZ323B
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . PIN Photodiodes PNZ323B (PN323B) Silicon planar type For optical control systems Unit: mm 4.6±0.2 Chip Not soldered 1.5 max. (1.0) 5.5±0.2 (0.5) 1.5±0.2 (2-0.6±0.1) 22.25±1.0 31.25±1.0 (1.32)
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2002/95/EC)
PNZ323B
PN323B)
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PN323B
Abstract: PNZ323B
Text: This product complies with the RoHS Directive EU 2002/95/EC . PIN Photodiodes PNZ323B (PN323B) Silicon planar type For optical control systems • Features Fast response which is well suited to high speed modulated light detection: tr , tf = 50 ns (typ.)
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2002/95/EC)
PNZ323B
PN323B)
PN323B
PNZ323B
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . PIN Photodiodes PNZ323B (PN323B) Silicon planar type For optical control systems Unit: mm 4.6±0.2 Chip Not soldered 1.5 max. (1.0) 5.5±0.2 6.0±0.2 (0.5) 1.5±0.2 22.25±1.0 Ta = 25°C Rating
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2002/95/EC)
PNZ323B
PN323B)
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MIP2F3
Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
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PAMP13-N1
MIP2F3
MIP2F4
MIP382
MIP2E7DMY
mip2f2
mip291
MIP414S
MIP2E5DMY
mip411
MIP3E3SMY equivalent
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PNJ4L01M
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . PNJ4L01M Photodiode with amplifier functions For infrared remote control systems • Features Center frequency fO : 36.7 kHz Operating supply voltage VCC : 3.3 V (typ.) Adoption of visible light cutoff resin
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2002/95/EC)
PNJ4L01M
PNJ4L01M
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Untitled
Abstract: No abstract text available
Text: Photo IC PNA4611M, PNA4613M, PNA4614M Photodiode with amplifier functions For infrared remote control systems Unit: mm 5.25±0.3 VCC Power dissipation PD Operating ambient temperature Topr Storage temperature Tstg 0.8 (5°) R2.25±0.1 (5°) 8.0±0.2 (5.2)
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PNA4611M,
PNA4613M,
PNA4614M
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PNA4S06M
Abstract: PNZ323B
Text: Photo IC PNA4S06M Photodiode with amplifier functions For infrared remote control systems Unit: mm • Features Extension distance is 10 m or more External parts not required Reflow soldering support 1 – 0.5 to +5 V Power dissipation PD 200
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PNA4S06M
PNA4S06M
PNZ323B
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Untitled
Abstract: No abstract text available
Text: Photo IC PNA4S11M Series PNA4S11M/4S12M/4S13M/4S14M Bipolar Integrated Circuit with Photodetection Function For infrared remote control systems M Di ain sc te on na tin nc ue e/ d Unit : mm Features Surface-mounting type for reflow soldering 5.2 (2.6) Space saved by miniaturization
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PNA4S11M
PNA4S11M/4S12M/4S13M/4S14M)
PNA4S11M
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Untitled
Abstract: No abstract text available
Text: Photo IC PNA4610M Bipolar Integrated Circuit with Photodetection Function Unit: mm For infrared remote control systems 0.8 2.0±0.15 3-1.5±0.2 Symbol Rating Unit Power supply voltage VCC − 0.5 to +7 V Power dissipation PD 200 mW Operating ambient temperature
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PNA4610M
LSTLR103NC-001
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PNJ4805M
Abstract: PNJ4805 PNZ323B
Text: This product complies with the RoHS Directive EU 2002/95/EC . PNJ4805M Photodiode with amplifier functions For infrared remote control systems • Features Center frequency fO : 38.0 kHz Operating supply voltage VCC : 3.3 V (typ.) Adoption of visible light cutoff resin
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2002/95/EC)
PNJ4805M
PNJ4805M
PNJ4805
PNZ323B
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PNA4601M
Abstract: PNZ323B
Text: This product complies with the RoHS Directive EU 2002/95/EC . Photo IC PNA4601M Photodiode with Photodetection Function For infrared remote control systems • Features Extension distance: 8 m or more External parts not required Adoption of visible light cutoff resin
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2002/95/EC)
PNA4601M
PNA4601M
PNZ323B
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PNA4618M
Abstract: pna4618 PNZ323B
Text: This product complies with the RoHS Directive EU 2002/95/EC . Photo IC PNA4618M (Tentative) Photodiode with amplifier functions For infrared remote control systems • Features Center frequency fO : 36.7 kHz Operating supply voltage VCC : 5.0 V(typ.)
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2002/95/EC)
PNA4618M
PNA4618M
pna4618
PNZ323B
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Photo IC PNA4S06M Photodiode with amplifier functions For infrared remote control systems Unit: mm • Features Extension distance is 10 m or more External parts not required Reflow soldering support
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2002/95/EC)
PNA4S06M
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schematic diagram atx Power supply 500w
Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455
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P462-ND
P463-ND
LNG295LFCP2U
LNG395MFTP5U
US2011)
schematic diagram atx Power supply 500w
pioneer PAL 012A
1000w inverter PURE SINE WAVE schematic diagram
600va numeric ups circuit diagrams
winbond bios 25064
TLE 9180 infineon
smsc MEC 1300 nu
TBE schematic diagram inverter 2000w
DK55
circuit diagram of luminous 600va UPS
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PHOTO TRANSISTOR 940nm to-18
Abstract: cnd0214a PNA1801LS-ND LN58-ND hall effect position sensor 503 PNZ109L-ND PNZ14700R LN175PA-ND PNZ331CL LNA2W01L-ND
Text: Hall Effect Sensor ICs Panasonic’s Hall IC is a combination of a Hall element, amplifier, Schmidt circuit, and stabilized power supply/temperature compensator integrated on an identical chip by using the IC technology. It amplifies Hall element output at the amplifier,
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CND0204ACT-ND
CND0215ACT-ND
CND0208ACT-ND
CND0214ACT-ND
CND0209ACT-ND
CND0216ACT-ND
CND0204ATR-ND
CND0215ATR-ND
CND0208ATR-ND
CND0214ATR-ND
PHOTO TRANSISTOR 940nm to-18
cnd0214a
PNA1801LS-ND
LN58-ND
hall effect position sensor 503
PNZ109L-ND
PNZ14700R
LN175PA-ND
PNZ331CL
LNA2W01L-ND
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Untitled
Abstract: No abstract text available
Text: Photo IC PNA461xM Series Photodiode with amplifier functions For infrared remote control systems Unit: mm Collector supply voltage VCC Unit − 0.5 to +7 V Power dissipation PD 200 mW Operating ambient temperature Topr −20 to +75 °C Storage temperature
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PNA461xM
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Photo IC PNA4610M Bipolar Integrated Circuit with Photodetection Function Unit: mm For infrared remote control systems Parameter Power dissipation Operating ambient temperature Storage temperature
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2002/95/EC)
PNA4610M
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Untitled
Abstract: No abstract text available
Text: Photo IC PNA4S02M Photodiode with Photodetection Function For infrared remote control systems Unit: mm • Features Surface-mouting type for reflow soldering Metal shieldless Space saved by miniaturization Ready for automatic mounting 1 1
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PNA4S02M
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Untitled
Abstract: No abstract text available
Text: Photo IC PNA4702M Photodiode with amplifier functions For infrared remote control systems Unit: mm Unit Operating supply voltage VCC – 0.5 to +5 V Power dissipation PD 200 mW Operating ambient temperature Topr –15 to +70 °C Storage temperature Tstg –40 to +100
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PNA4702M
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