PNZ163NC Search Results

PNZ163NC Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
PNZ163NC		Panasonic	Silicon NPN Phototransistors		Original	PDF
PNZ163NC		Panasonic	Silicon NPN Phototransistor		Original	PDF

PNZ163NC Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
PN163 Abstract: PNZ163NC Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ163NC (PN163(NC) Silicon planar type Unit: mm φ1.1 0.8 0.8 max. 3.0±0.3 1.4±0.2 0.9 0.5 R0.5 12 min. • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Collector-emitter voltage (Base open)	Original	2002/95/EC) PNZ163NC PN163 PNZ163NC	PDF
Untitled Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ163NC (PN163(NC) Silicon planar type Unit: mm 0.8 max. 2.4 1.1 3.0±0.3 φ1.1 12 min. Parameter Symbol Rating Collector-emitter voltage (Base open) VCEO 20 V 20 mA IC Collector power dissipation	Original	2002/95/EC) PNZ163NC PN163	PDF
PN163 Abstract: PNZ163NC Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ163NC (PN163(NC) Silicon planar type Unit: mm 3.0±0.3 φ1.1 Collector-emitter voltage (Base open) Collector current Collector power dissipation Operating ambient temperature	Original	2002/95/EC) PNZ163NC PN163 PNZ163NC	PDF
Untitled Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ163NC (PN163(NC) Silicon planar type Unit: mm Parameter Symbol Rating Collector-emitter voltage (Base open) VCEO 20 V IC 20 mA Collector current Unit φ1.1 0.8 0.8 max. • Absolute Maximum Ratings Ta = 25°C	Original	2002/95/EC) PNZ163NC PN163	PDF
PNZ163NC Abstract: No abstract text available Text: Phototransistors PNZ163NC PN163-(NC Silicon NPN Phototransistor 3.5±0.3 Gate the rest 2.4 1.1 0.8 max. 1.1 0.8 Unit : mm For optical control systems Features High sensitivity 3.0±0.3 ø1.1 R0.5 1.95±0.25 1.4±0.2 0.9 0.5 Fast response : tr = 4 µs (typ.)	Original	PNZ163NC PN163- PNZ163NC	PDF
PN163 Abstract: PNZ163NC Text: Phototransistors PNZ163NC PN163(NC Silicon planar type Unit: mm Parameter Symbol Rating Collector-emitter voltage (Base open) VCEO 20 V IC 20 mA Collector current Unit φ1.1 0.8 0.8 max. • Absolute Maximum Ratings Ta = 25°C 2.4 1.1 3.5±0.3 12 min. • High sensitivity	Original	PNZ163NC PN163 PNZ163NC	PDF
Untitled Abstract: No abstract text available Text: Phototransistors PNZ163NC Silicon NPN Phototransistor 3.5±0.3 Gate the rest 2.4 1.1 0.8 max. 1.1 0.8 Unit : mm For optical control systems Features High sensitivity 3.0±0.3 ø1.1 R0.5 1.95±0.25 1.4±0.2 0.9 0.5 Fast response : tr = 4 µs typ. 12 min.	Original	PNZ163NC	PDF
TC4009BP Abstract: DNP319 tps607 TLP1230 TLP1200 GP1S093HCZ0F SG2751 2SC1959 IS471FE PT380F Text: 光センサ ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動したり故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入	Original	050106CH1 TLP1025 TLP1029 TLP1033A TLP1034 TLP1201A TLP1201A TLP1204 TC4009BP DNP319 tps607 TLP1230 TLP1200 GP1S093HCZ0F SG2751 2SC1959 IS471FE PT380F	PDF
PNZ335 Abstract: PN126S PNA1801 PNA1801L LNA1401L cd pick up PNA4602M visible photodetector PNZ334 PN300F Text: Characteristics List • Photodetector 11 Photodetector ■ PIN Photodiode Absolute Maximum Ratings VR V PD (mW) ID VR max. VR (V) (nA) (V) 30 10 50 Part No. PNA3W01L (PN307) Electro • Optical Characteristics Ta = 25°C IL λP L min. typ. VR (lx) (µA) (nm) (V)	Original	PNA3W01L PN307) PNZ313 PN313) PNZ300F PN300F) PNZ313B PN313B) PNZ323 PN323) PNZ335 PN126S PNA1801 PNA1801L LNA1401L cd pick up PNA4602M visible photodetector PNZ334 PN300F	PDF