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    PNZ120S Search Results

    PNZ120S Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    PNZ120S Panasonic Silicon NPN Phototransistor Original PDF

    PNZ120S Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LN62S

    Abstract: PN120S PNZ120S
    Text: Phototransistors PNZ120S PN120S Silicon NPN Phototransistor Unit : mm ø3.0±0.2 Can be combined with LN62S to form an optical controller Features 4.1±0.3 2.0±0.2 For optical control systems 12.5 min. High sensitivity Wide directional sensitivity for easy use


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    PDF PNZ120S PN120S) LN62S PN120S PNZ120S

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ120S (PN120S) Silicon planar type Unit: mm For optical control systems 3.75±0.3 • Features 12.5 min. • High sensitivity • Wide directivity characteristics for easy use


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    PDF 2002/95/EC) PNZ120S PN120S)

    Untitled

    Abstract: No abstract text available
    Text: Phototransistors PNZ120S Silicon NPN Phototransistor Unit : mm ø3.0±0.2 4.1±0.3 2.0±0.2 For optical control systems Features 12.5 min. High sensitivity Wide directional sensitivity for easy use Fast response : tr, tf = 3 µs typ. ø0.3±0.05 ø0.45±0.05


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    PDF PNZ120S

    PN120S

    Abstract: PNZ120S
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ120S (PN120S) Silicon planar type For optical control systems • Features  High sensitivity  Wide directivity characteristics for easy use  Fast response: tr , tf = 3 s (typ.)


    Original
    PDF 2002/95/EC) PNZ120S PN120S) PN120S PNZ120S

    Untitled

    Abstract: No abstract text available
    Text: Phototransistors PNZ120S PN120S Silicon planar type Unit: mm For optical control systems 3.75±0.3 • Features 12.5 min. • High sensitivity • Wide directivity characteristics for easy use • Fast response: tr , tf = 3 µs (typ.) • Signal mixing capability using base pin


    Original
    PDF PNZ120S PN120S) CTRLR102-001

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ120S (PN120S) Silicon planar type Unit: mm For optical control systems 4.1±0.3 • Features 12.5 min. • High sensitivity • Wide directivity characteristics for easy use


    Original
    PDF 2002/95/EC) PNZ120S PN120S)

    Untitled

    Abstract: No abstract text available
    Text: Phototransistors PNZ120S PN120S Silicon planar type Unit: mm For optical control systems 4.1±0.3 • Features 12.5 min. • High sensitivity • Wide directivity characteristics for easy use • Fast response: tr , tf = 3 µs (typ.) • Signal mixing capability using base pin


    Original
    PDF PNZ120S PN120S)

    MIP2F3

    Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
    Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


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    PDF PAMP13-N1 MIP2F3 MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent

    mip411

    Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
    Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


    Original
    PDF PAMP13-N1 mip411 MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291

    PNZ335

    Abstract: PN126S PNA1801 PNA1801L LNA1401L cd pick up PNA4602M visible photodetector PNZ334 PN300F
    Text: Characteristics List • Photodetector 11 Photodetector ■ PIN Photodiode Absolute Maximum Ratings VR V PD (mW) ID VR max. VR (V) (nA) (V) 30 10 50 Part No. PNA3W01L (PN307) Electro • Optical Characteristics Ta = 25°C IL λP L min. typ. VR (lx) (µA) (nm) (V)


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    PDF PNA3W01L PN307) PNZ313 PN313) PNZ300F PN300F) PNZ313B PN313B) PNZ323 PN323) PNZ335 PN126S PNA1801 PNA1801L LNA1401L cd pick up PNA4602M visible photodetector PNZ334 PN300F

    MIL-STD-19500H

    Abstract: PN120S-RL
    Text: Sheet No. 1/5 30fi8!fô/PRODUCT SPECIFICATION OB DESIGNED BY TYPE NUMBER : P N 1 2 0 S n-/\‘Ä-qDn ^ / G L O B A L NUMBER : P N Z 1 CHECKED BY CHECKED BY APPROVED BY 2 0 S 0 □ *1 7 * h h "7 > V &# J / T y p e $ /Photo Transistor Eifè/Appl ¡cation Optical Fiber Communication Systems


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    PDF PN120S-QL PNZ120S0QU PN120S-G CPNZ120S0Q] PN120S-RL PNZI20S0RU PN120S-R CPNZ120S0R] PN120S-SL CPNZ120S0SL] MIL-STD-19500H PN120S-RL