PN106
Abstract: PNZ106 npn phototransistor
Text: Phototransistors PNZ106 PN106 Silicon NPN Phototransistor Unit : mm ø4.6±0.15 Glass lens 6.3±0.3 For optical control systems Features High sensitivity 12.7 min. Fast response : tr = 3.5 µs (typ.) Narrow directional sensitivity for effective use of light input
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PNZ106
PN106)
PN106
PNZ106
npn phototransistor
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PN106
Abstract: PNZ106
Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ106 (PN106) Silicon planar type Unit: mm φ4.6±0.15 For optical control systems M Di ain sc te on na tin nc ue e/ d 6.3±0.3 Glass lens • Features 12.7 min. ue pl d in an c
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2002/95/EC)
PNZ106
PN106)
PN106
PNZ106
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ106 (PN106) Silicon planar type Unit: mm φ4.6±0.15 For optical control systems 6.3±0.3 Glass lens • Features 12.7 min. • High sensitivity • Fast response: tr = 3.5 µs (typ.)
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Original
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PDF
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2002/95/EC)
PNZ106
PN106)
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ106 (PN106) Silicon planar type Unit: mm φ4.6±0.15 For optical control systems 6.3±0.3 Glass lens • Features M Di ain sc te on na tin nc ue e/ d 12.7 min. • High sensitivity
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Original
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PDF
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2002/95/EC)
PNZ106
PN106)
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Untitled
Abstract: No abstract text available
Text: Phototransistors PNZ106 Silicon NPN Phototransistor Unit : mm ø4.6±0.15 Glass lens 6.3±0.3 For optical control systems Features High sensitivity 12.7 min. Fast response : tr = 3.5 µs typ. Narrow directional sensitivity for effective use of light input
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PNZ106
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PN106
Abstract: PNZ106 L1028
Text: Phototransistors PNZ106 PN106 Silicon planar type Unit: mm φ4.6±0.15 For optical control systems 6.3±0.3 Glass lens • Features 12.7 min. • High sensitivity • Fast response: tr = 3.5 µs (typ.) • Narrow directivity characteristics for effective use of light input
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Original
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PDF
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PNZ106
PN106)
PN106
PNZ106
L1028
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ106 (PN106) Silicon planar type Unit: mm φ4.6±0.15 For optical control systems 6.3±0.3 Glass lens M Di ain sc te on na tin nc ue e/ d • Features 12.7 min. • High sensitivity
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2002/95/EC)
PNZ106
PN106)
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PNZ335
Abstract: PN126S PNA1801 PNA1801L LNA1401L cd pick up PNA4602M visible photodetector PNZ334 PN300F
Text: Characteristics List • Photodetector 11 Photodetector ■ PIN Photodiode Absolute Maximum Ratings VR V PD (mW) ID VR max. VR (V) (nA) (V) 30 10 50 Part No. PNA3W01L (PN307) Electro • Optical Characteristics Ta = 25°C IL λP L min. typ. VR (lx) (µA) (nm) (V)
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PNA3W01L
PN307)
PNZ313
PN313)
PNZ300F
PN300F)
PNZ313B
PN313B)
PNZ323
PN323)
PNZ335
PN126S
PNA1801
PNA1801L
LNA1401L
cd pick up
PNA4602M
visible photodetector
PNZ334
PN300F
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