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    PNP TRANSISTOR 8550B Search Results

    PNP TRANSISTOR 8550B Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    PNP TRANSISTOR 8550B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    st8550d

    Abstract: br 8550 NPN Transistor BR 8550 BR 8550 D st8550c st 8550d PNP transistor 8550 8550 NPN Transistor BR 8550 transistor 8550b
    Text: ST 8550 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into four groups, B, C, D and E, according to its DC current gain. As


    Original     		PDF 20MHz st8550d br 8550 NPN Transistor BR 8550 BR 8550 D st8550c st 8550d PNP transistor 8550 8550 NPN Transistor BR 8550 transistor 8550b

    BR 8550

    Abstract: br 8550 NPN Transistor st 8550d st8550d BR 8550 D ST 8550 8550 transistor PNP transistor 8550 8550 pnp transistor st8550c
    Text: ST 8550 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into four groups, B, C, D and E, according to its DC current gain. As


    Original     		PDF 20MHz BR 8550 br 8550 NPN Transistor st 8550d st8550d BR 8550 D ST 8550 8550 transistor PNP transistor 8550 8550 pnp transistor st8550c

    BR 8550

    Abstract: br 8550 NPN Transistor st8550d BR 8550 D st 8550d 8550 NPN Transistor PNP transistor 8550 BR 8550 transistor st 8550 br 8550 c
    Text: ST 8550 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into four groups, B, C, D and E, according to its DC current gain. As


    Original     		PDF 20MHz BR 8550 br 8550 NPN Transistor st8550d BR 8550 D st 8550d 8550 NPN Transistor PNP transistor 8550 BR 8550 transistor st 8550 br 8550 c

    BR 8550

    Abstract: br 8550 NPN Transistor BR 8550 D st8550d s 8550 d PNP transistor 8550 s 8550 transistors PNP 8550 8550 br 8550 c NPN Transistor
    Text: ST 8550 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into four groups, B, C, D and E, according to its DC current gain. As


    Original     		PDF 20MHz BR 8550 br 8550 NPN Transistor BR 8550 D st8550d s 8550 d PNP transistor 8550 s 8550 transistors PNP 8550 8550 br 8550 c NPN Transistor

    8550b

    Abstract: 8050B 45594 Shanghai SIM-BCD Semiconductor PNP transistor 8550B
    Text: 8550B 8550B Silicon PNP Epitaxial Transistor Description :The 8550B is designed for use in 2W output amplifier of portable radios in class B push-pull operation Features: ●Excellent hFE Linearity ●Complementary to 8050B Chip Appearance Chip Size 580umx580um


    Original     		PDF 8550B 8550B 8050B 580um 580um 115um 115um 120um 120um 8050B 45594 Shanghai SIM-BCD Semiconductor PNP transistor 8550B