Untitled
Abstract: No abstract text available
Text: Red LED Chip OPA6917 GaP/GaP 1. Material Substrate GaP Epitaxial Layer GaP 2. Electrode N Cathode Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter (N Type) (P/N Type) Symbol Min Forward Voltage Typ Unit Condition V IF=1mA
|
Original
|
PDF
|
OPA6917
10mil
10mil
11mil
11mil
115um
|
OPA5816
Abstract: No abstract text available
Text: Yellow LED Chip OPA5816 GaAsP/GaP 1. Material Substrate GaP N Type Epitaxial Layer GaAsP (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol Min Forward Voltage Typ Unit Condition
|
Original
|
PDF
|
OPA5816
10mil
10mil
11mil
11mil
115um
OPA5816
|
Untitled
Abstract: No abstract text available
Text: Red LED Chip OPA6916 GaP/GaP 1. Material Substrate GaP Epitaxial Layer GaP 2. Electrode N Cathode Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter (N Type) (P/N Type) Symbol Min Forward Voltage Typ Unit Condition V IF=1mA
|
Original
|
PDF
|
OPA6916
10mil
10mil
11mil
11mil
115um
|
Untitled
Abstract: No abstract text available
Text: Orange LED Chip OPA6316 GaAsP/GaP 1. Material Substrate GaP N Type Epitaxial Layer GaAsP (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol Min Forward Voltage VF(1) Typ Max Unit
|
Original
|
PDF
|
OPA6316
10mil
10mil
11mil
11mil
115um
|
OPA5627
Abstract: No abstract text available
Text: Standard Green LED Chip OPA5627 GaP/GaP 1. Material Substrate GaP Epitaxial Layer GaP 2. Electrode N Cathode Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter (N Type) (P/N Type) Symbol Min Forward Voltage Typ Unit Condition
|
Original
|
PDF
|
OPA5627
10mil
10mil
11mil
11mil
115um
OPA5627
|
Untitled
Abstract: No abstract text available
Text: TM8723 4 Bit Microcontroller GENERAL DESCRIPTION The TM8723 is an embedded high-performance 4-bit microcomputer with LCD/LED driver. It contains all the necessary functions, such as 4-bit parallel processing ALU, ROM, RAM, I/O ports, timer, clock generator, dual clock, EL light, LCD driver, look-up table, watchdog
|
Original
|
PDF
|
TM8723
TM8723
SEG21
768KHz
|
Untitled
Abstract: No abstract text available
Text: Orange LED Chip OPA6316 GaAsP/GaP 1. Material Substrate GaP N Type Epitaxial Layer GaAsP (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol Min Forward Voltage VF(1) Typ Max Unit
|
Original
|
PDF
|
OPA6316
-------------------------------------20mA
10mil
10mil
11mil
11mil
115um
|
Untitled
Abstract: No abstract text available
Text: Yellow LED Chip OPA5816 GaAsP/GaP 1. Material Substrate GaP N Type Epitaxial Layer GaAsP (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol Min Forward Voltage Typ Unit Condition
|
Original
|
PDF
|
OPA5816
10mil
10mil
11mil
11mil
115um
|
Untitled
Abstract: No abstract text available
Text: Orange LED Chip OPA6316H GaAsP/GaP 1. Material Substrate GaP N Type Epitaxial Layer GaAsP (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol Min Forward Voltage VF(1) Typ Max Unit
|
Original
|
PDF
|
OPA6316H
-------------------------------------20mA
10mil
10mil
11mil
11mil
115um
|
FMM5056
Abstract: FMM5056X ED-4701 eudyna an
Text: Preliminary FMM5056X 5.8-7.2GHz Power Amplifier MMIC FEATURES ・High Output Power: 34.0dBm typ. ・High Linear Gain: 28.0dB(typ.) ・Frequency Band: 5.8 - 7.2 GHz ・Broad Band: 5.8～7.2GHz ・Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5056X is a MMIC amplifier that contains a four-stage
|
Original
|
PDF
|
FMM5056X
FMM5056X
FMM5056
ED-4701
eudyna an
|
Untitled
Abstract: No abstract text available
Text: Yellow Green LED Chip OPA5616H GaP/GaP 1. Material Substrate GaP Epitaxial Layer GaP 2. Electrode N Cathode Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter (N Type) (P/N Type) Symbol Min Forward Voltage Typ Unit Condition
|
Original
|
PDF
|
OPA5616H
10mil
10mil
11mil
11mil
115um
|
TM8723
Abstract: No abstract text available
Text: TM8723 4 Bit Microcontroller GENERAL DESCRIPTION The TM8723 is an embedded high-performance 4-bit microcomputer with LCD/LED driver. It contains all the necessary functions, such as 4-bit parallel processing ALU, ROM, RAM, I/O ports, timer, clock generator, dual clock, EL light, LCD driver, look-up table, watchdog
|
Original
|
PDF
|
TM8723
TM8723
SEG21
768KHz
|
bcm 4330
Abstract: telemecanique contactor catalogue A5 GNC mosfet philips ecg master replacement guide Elektronikon II keltron electrolytic capacitors PART NO SELEMA DRIVER MOTOR AC 12v dc EIM Basic MK3 lenze 8600 Atlas copco rc universal 60 min
Text: NEED IT NOW? BUY REMAN! SEE PAGE lxx xx xvi SOLUTIONS, SOLUTIONS. Q A r e q u a l i t y, c o s t , a n d t i m e i m p o r t a n t to you? A ELECTRICAL SOUTH! Q Do you spend too much of your valuable time dealing with too m a n y d i ff e r e n t r e p a i r v e n d o r s ?
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: Pure Green LED Chip OPA5516 GaP/GaP 1. Material Substrate GaP Epitaxial Layer GaP 2. Electrode N Cathode Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter (N Type) (P/N Type) Symbol Min Forward Voltage Typ Unit Condition
|
Original
|
PDF
|
OPA5516
10mil
10mil
11mil
11mil
115um
|
|
|
OPA5536
Abstract: 564nm
Text: Pure Green LED Chip OPA5536 GaP/GaP 1. Material Substrate GaP Epitaxial Layer GaP 2. Electrode N Cathode Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter (N Type) (P/N Type) Symbol Min Forward Voltage Typ Unit Condition
|
Original
|
PDF
|
OPA5536
10mil
10mil
11mil
11mil
115um
OPA5536
564nm
|
8550b
Abstract: 8050B 45594 Shanghai SIM-BCD Semiconductor PNP transistor 8550B
Text: 8550B 8550B Silicon PNP Epitaxial Transistor Description :The 8550B is designed for use in 2W output amplifier of portable radios in class B push-pull operation Features: ●Excellent hFE Linearity ●Complementary to 8050B Chip Appearance Chip Size 580umx580um
|
Original
|
PDF
|
8550B
8550B
8050B
580um
580um
115um
115um
120um
120um
8050B
45594
Shanghai SIM-BCD Semiconductor
PNP transistor 8550B
|
Untitled
Abstract: No abstract text available
Text: Red LED Chip OPA6916 GaP/GaP 1. Material Substrate GaP Epitaxial Layer GaP 2. Electrode N Cathode Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter (N Type) (P/N Type) Symbol Min Forward Voltage Typ Unit Condition V IF=1mA
|
Original
|
PDF
|
OPA6916
10mil
10mil
11mil
11mil
115um
|
hx8312
Abstract: No abstract text available
Text: DOC No. HX8312-A-DS HX8312-A 240 RGB x 320 dot, 262K color, with internal GRAM, TFT Mobile Single Chip Driver Version 05 March, 2006 HX8312-A 240 RGB x 320 dot, 262K color, with internal GRAM, TFT Mobile Single Chip Driver List of Contents March, 2006
|
Original
|
PDF
|
HX8312-A-DS
HX8312-A
123March
hx8312
|
10667G
Abstract: ADN2843CHIPSET
Text: a 10.709Gb/s LASER DIODE DRIVER Chipset ADN2843 Preliminary Technical Data FEATURES Data Rates from 50Mb/s to 10.709Gb/s Typical rise/fall time 25/23 ps Bias Current range 3mA to 80 mA Modulation Current range 5mA to 80 mA µA to 1100µ µA Monitor Photo Diode current 50µ
|
Original
|
PDF
|
709Gb/s
50Mb/s
OC-192,
STM-64
667Gb/s
IEEE802
ADN2843
ADN2843
10667G
ADN2843CHIPSET
|
sanko MOTOR
Abstract: Electric Double Layer Capacitors, Radial Lead Type
Text: Aluminum Electrolytic Capacitors Conductive Polymer Hybrid Aluminum Electrolytic Capacitors Capacitor Business Division Automotive & Industrial Systems Company, Panasonic Co., Ltd. −0− Contents
|
Original
|
PDF
|
com/www-ctlg/ctlg/qABA0000
sanko MOTOR
Electric Double Layer Capacitors, Radial Lead Type
|
ED-214IR
Abstract: No abstract text available
Text: ED-214IR AlGaAs/AlGaAs IrED Chips 880 nm Features : Typical Applications : • N side up • Industrial Infrared Equipment Outline Dimensions : Unit: um 335 320 n-Electrode n-AlGaAs epi layer n-Electrode 255 115 335 p-AlGaAs epi layer Emission area p-Electrode
|
Original
|
PDF
|
ED-214IR
115um
320um
255um
335um
335um
ED-214IR
|
x260
Abstract: No abstract text available
Text: ED-011SGU GaP/GaP LED Chips Standard-Green Features : Typical Applications : • GaP epi wafer • Lamp • SMD • Display Outline Dimensions : Unit: um 260 245 p-Electrode p-GaP epi layer n-GaP epi layer 260 p-Electrode 115 255 n-GaP Substrate Emission area
|
Original
|
PDF
|
ED-011SGU
115um
x260
|
Untitled
Abstract: No abstract text available
Text: Point Light Source LED Chip OPA6530S1 GaAsP/GaAs 1. Material Substrate GaAs N Type Epitaxial Layer GaAsP (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Aluminum Alloy 3. Electro-Optical Characteristics Parameter Symbol Min Forward Voltage VF
|
Original
|
PDF
|
OPA6530S1
115um
11mil
|
Untitled
Abstract: No abstract text available
Text: Pure Green LED Chip OPA5516 GaP/GaP 1. Material Substrate GaP Epitaxial Layer GaP 2. Electrode N Cathode Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter (N Type) (P/N Type) Symbol Min Forward Voltage Typ Unit Condition
|
Original
|
PDF
|
OPA5516
10mil
10mil
11mil
11mil
115um
|
