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    PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT Search Results

    PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4204F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4162F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4206F Toshiba Electronic Devices & Storage Corporation Intelligent power device 500V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TLX9188 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, SO6, Automotive Visit Toshiba Electronic Devices & Storage Corporation

    PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2907A

    Abstract: PZT2907A 2907a TRANSISTOR PNP
    Text: PZT2907A PNP Silicon Silicon Planar Medium Power Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-223 DESCRIPTION  The PZT2907A is designed for general purpose amplifier and high-speed switching, medium power switching applications.


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    PDF PZT2907A OT-223 PZT2907A -50mA -150mA, -15mA -500mA, -10mA -150mA 2907A 2907a TRANSISTOR PNP

    2N2907A surface mount

    Abstract: No abstract text available
    Text: 2N2907ACSM HIGH SPEED, MEDIUM POWER, PNP SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL PNP TRANSISTOR 0.31 rad.


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    PDF 2N2907ACSM OT23apacitance 150mA 2N2907A surface mount

    Untitled

    Abstract: No abstract text available
    Text: 2N2907ACSM HIGH SPEED, MEDIUM POWER, PNP SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL PNP TRANSISTOR 0.31 rad.


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    PDF 2N2907ACSM 100MHz 150mA

    2N2907A surface mount

    Abstract: 2N2907A PNP Transistor 2N2907A 2N2907ACSM
    Text: 2N2907ACSM HIGH SPEED, MEDIUM POWER, PNP SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL PNP TRANSISTOR 0.31 rad.


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    PDF 2N2907ACSM 150mA 2N2907A surface mount 2N2907A PNP Transistor 2N2907A 2N2907ACSM

    2N5322

    Abstract: 2N5323
    Text: 2N5322 2N5323 MEDIUM-POWER AMPLIFIERS DESCRIPTION The 2N5322 and 2N5323 are silicon planar epitaxial PNP transistors in Jedec TO-39 metal case. They are especially intended for high-voltage medium power applications in industrial and commercial equipments.


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    PDF 2N5322 2N5323 2N5322 2N5323

    2N2894A

    Abstract: 036w
    Text: 2N2894ACSM HIGH SPEED, MEDIUM POWER, PNP GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL PNP TRANSISTOR 0.31 rad.


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    PDF 2N2894ACSM 300ms, 2N2894A" 2N2894A 2N2894ACSM 2N2894A-JQR-B 5/30m 800MHz 036w

    12w 98 transistor

    Abstract: No abstract text available
    Text: 2N2894CSM HIGH SPEED, MEDIUM POWER, PNP GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL PNP TRANSISTOR 0.31 rad.


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    PDF 2N2894CSM 300ms, 2N2894CSM" 2N2894CSM 2N2894CSM-JQR-B 5/30m 400MHz 12w 98 transistor

    ic 4078

    Abstract: IC 4078 DATASHEET 2N2894ACSM 2N2894A
    Text: 2N2894ACSM HIGH SPEED, MEDIUM POWER, PNP GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES 0.31 rad. (0.012) • SILICON PLANAR EPITAXIAL PNP


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    PDF 2N2894ACSM ic 4078 IC 4078 DATASHEET 2N2894ACSM 2N2894A

    Untitled

    Abstract: No abstract text available
    Text: 2N2894ACSM HIGH SPEED, MEDIUM POWER, PNP GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES 0.31 rad. (0.012) • SILICON PLANAR EPITAXIAL PNP


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    PDF 2N2894ACSM

    2N2894A

    Abstract: 2N2894ACSM
    Text: 2N2894ACSM HIGH SPEED, MEDIUM POWER, PNP GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL PNP TRANSISTOR 0.31 rad.


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    PDF 2N2894ACSM 100MHz 300ms, 2N2894A 2N2894ACSM

    2N2907A LCC3

    Abstract: No abstract text available
    Text: 2N2907ACSM4R HIGH SPEED, MEDIUM POWER, PNP SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL PNP TRANSISTOR 1.40 ± 0.15


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    PDF 2N2907ACSM4R 150mA 2N2907A LCC3

    2N2894A

    Abstract: 2N2894ACSM
    Text: 2N2894ACSM HIGH SPEED, MEDIUM POWER, PNP GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES 0.31 rad. (0.012) • SILICON PLANAR EPITAXIAL PNP


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    PDF 2N2894ACSM 2N2894A 2N2894ACSM

    2N2894

    Abstract: 2N2894CSM
    Text: 2N2894CSM HIGH SPEED, MEDIUM POWER, PNP GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES 0.31 rad. (0.012) • SILICON PLANAR EPITAXIAL PNP


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    PDF 2N2894CSM 2N2894 2N2894CSM

    Untitled

    Abstract: No abstract text available
    Text: 2N2894ACSM HIGH SPEED, MEDIUM POWER, PNP GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES 0.31 rad. (0.012) • SILICON PLANAR EPITAXIAL PNP


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    PDF 2N2894ACSM

    2N2894

    Abstract: 2N2894CSM 12w 98 transistor
    Text: 2N2894CSM HIGH SPEED, MEDIUM POWER, PNP GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL PNP TRANSISTOR 0.31 rad.


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    PDF 2N2894CSM 100MHz 300ms, 2N2894 2N2894CSM 12w 98 transistor

    2N2907A

    Abstract: 2N2907ACSM
    Text: SEME 2N2907ACSM LAB HIGH SPEED, MEDIUM POWER, PNP SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL PNP TRANSISTOR 0.31 rad.


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    PDF 2N2907ACSM 150mA 2N2907A 2N2907ACSM

    LCC1 weight

    Abstract: 2N2907A LCC3 2N2907ACSM-JQR-B 2N2907ACSM LCC3 weight
    Text: SEME 2N2907ACSM LAB HIGH SPEED, MEDIUM POWER, PNP SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL PNP TRANSISTOR 0.31 rad.


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    PDF 2N2907ACSM 2N2907ACSM" 2N2907ACSM 2N2907ACSM4 2N2907ACSM4-JQR-B 2N2907ACSMCECC 2N2907ACSM-JQR-B 200MHz LCC1 weight 2N2907A LCC3 LCC3 weight

    bss17

    Abstract: 2N5322/BSS17 2n5322 2n5323
    Text: 2N5322/BSS17 2N 5323/BSS18 SILICON PLANAR PNP MEDIUM-POWER A M PLIFIERS The 2N 5322/BSS17 arid 2N 5323/BSS18 are silicon planar epitaxial PNP transistors in Jedec T O -3 9 metal case. They are especially intended for high-voltage medium power applications in industrial and commercial equipments.


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    PDF 2N5322/BSS17 5323/BSS18 5322/BSS17 5323/BSS18 bss17 2n5322 2n5323

    bss17

    Abstract: bsst7 2n5323 5322 2n5322
    Text: 2N 5322/BSS17 2N 5323/BSSW SILICON PLANAR PNP MEDIUM-POWER A M PLIFIER S The 2N 5322/BSS17 and 2N 5323/BSS18 are silicon planar epitaxial PNP transistors in Jedec T O -3 9 metal case. They are especially intended for high-voltage medium power applications in industrial and commercial equipments.


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    PDF 5322/BSS17 5323/BSSHI 5323/BSS18 bss17 bsst7 2n5323 5322 2n5322

    Untitled

    Abstract: No abstract text available
    Text: BFX38 BFX39 BFX40 BFX41 PNP MEDI UM SILICON PLANAR POWËR SWITCHING EPITAXIAL TRANSISOR CASE TO-39 The BFX38, BFX39, BFX40 and BFX41 are PNP silicon planar epitaxial ttansistors designed for medium power amplifiers and switching applications where high voltage and high


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    PDF BFX38 BFX39 BFX40 BFX41 BFX38, BFX39, BFX41 BFX38/39 BFX40/41

    2N2904A

    Abstract: 2N2905A PN2904A PN2905A
    Text: 2N/PN2904A 2N/PN2905A PNP SILICON TRANSISTORS 2N/PN2904A & 2N/PN2905A are PNP silicon planar epitaxial transistors. TO-39 It is intended for high speed medium power switching and general purpose amplifier applications. 2N2904A 2N2905A ABSOLUTE MAXIMUM RATINGS


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    PDF 2N/PN2904A 2N/PN2905A 2N/PN2904A 2N2904A 2N2905A 600mA 600mW T0-92A PN2904A PN2905A

    PN2904A

    Abstract: T0-92A 2N2904A 2N2905A PN2905A 2N2904A-2N2905A
    Text: 2N/PN2904A 2N/PN2905A PNP SILICON TRANSISTORS 2N/PN2904A & 2N/PN2905A are PNP silicon planar epitaxial transistors. T0-39 T0-92A It is intended for high speed medium power switching and general purpose amplifier applications. 2N2904A 2N2905A ABSOLUTE MAXIMUM RATINGS


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    PDF 2N/PN2904A 2N/PN2905A 2N/PN2904A 2N2904A 2N2905A 600mA 600mW T0-92A PN2904A PN2905A 2N2904A-2N2905A

    Untitled

    Abstract: No abstract text available
    Text: PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR ZTX758 ISSUE 1 - APRIL 94_ *— - FEATURES * * 400 Volt VCE0 0.5 Amp continuous current * Ptot=1 W att ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL


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    PDF ZTX758 001G35S

    2SB939

    Abstract: 2SB939A 2SD1262 2SD1262A high current Darlington pair IC
    Text: Power Transistors 2SB939, 2SB939A 2SB939, 2SB939A Package Dimensions Silicon PNP Epitaxial Planar Darlington Type Medium Speed Power Switching Complementary Pair with 2SD 1262, 2SD 1262A • Features • High DC current gain hFE • High speed switching


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    PDF 2SB939, 2SB939A 2SD1262, 2SD1262A 2SB939 2SB939A 2SD1262 2SD1262A high current Darlington pair IC