PNP HIGH EMITTER BASE VOLTAGE 15 VOLT Search Results

PNP HIGH EMITTER BASE VOLTAGE 15 VOLT Result Highlights (5)

Part	Manufacturer	Description
TMPM3HMFYAFG	Toshiba Electronic Devices & Storage Corporation	Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP80-1212-0.50-003
TMPM3HPFYADFG	Toshiba Electronic Devices & Storage Corporation	Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP128-1420-0.50-001
TMPM3HLFYAUG	Toshiba Electronic Devices & Storage Corporation	Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP64-1010-0.50-003
TMPM3HNFZAFG	Toshiba Electronic Devices & Storage Corporation	Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP100-1414-0.50-002
TMPM3HLFZAUG	Toshiba Electronic Devices & Storage Corporation	Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP64-1010-0.50-003

PNP HIGH EMITTER BASE VOLTAGE 15 VOLT Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
sm 170 380 Abstract: ZDT1147 IB 115 DSA003723 Text: SM-8 DUAL PNP MEDIUM POWER HIGH GAIN TRANSISTORS ZDT1147 ISSUE 1 - AUGUST 1997 C1 B1 C1 E1 C2 B2 C2 E2 SM-8 8 LEAD SOT223 PARTMARKING DETAIL – ZDT1147 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO -15 V Collector-Emitter Voltage	Original	ZDT1147 OT223) 100ms 100us sm 170 380 ZDT1147 IB 115 DSA003723	PDF
mjl4281 Abstract: MJL4302A mjl4302 MJL428 Text: MJL4281A NPN MJL4302A (PNP) Preferred Device Complementary NPN−PNP Silicon Power Bipolar Transistors The MJL4281A and MJL4302A are PowerBaset power transistors for high power audio. • 350 V Collector−Emitter Sustaining Voltage • Gain Complementary:	Original	MJL4281A MJL4302A MJL4281A MJL4302A mjl4281 mjl4302 MJL428	PDF
MJL4281A Abstract: MJL4302A mjl 350 mjl4302 Text: MJL4281A NPN MJL4302A (PNP) Preferred Device Complementary NPN−PNP Silicon Power Bipolar Transistors The MJL4281A and MJL4302A are PowerBaset power transistors for high power audio. • 350 V Collector−Emitter Sustaining Voltage • Gain Complementary:	Original	MJL4281A MJL4302A MJL4281A MJL4302A MJL4281A/D mjl 350 mjl4302	PDF
IC 7418 Abstract: IC 7418 by national semiconductor 7418 national 2n2222 RF Transistor 2n2222 PNP Transistor 2N2222 equivalent LM195 2N2222 application note emitter follower A-083081-2 tl 2n2222 Text: INTRODUCTION Overload protection is perhaps most necessary in power circuitry This is shown by recent trends in power transistor technology Safe-area voltage and current handling capability have been increased to limits far in excess of package power dissipation In RF transistors devices are now available and able to withstand badly mismatched loads without	Original		PDF
MJL4302AG Abstract: mjl4302a mjl4281 MJL4281AG MJL4281A SEC1100 ALL TRANSISTORS Text: MJL4281A NPN MJL4302A (PNP) Preferred Device Complementary NPN−PNP Silicon Power Bipolar Transistors The MJL4281A and MJL4302A are PowerBaset power transistors for high power audio. Features • 350 V Collector−Emitter Sustaining Voltage • Gain Complementary:	Original	MJL4281A MJL4302A MJL4281A MJL4302A O-264 MJL4281A/D MJL4302AG mjl4281 MJL4281AG SEC1100 ALL TRANSISTORS	PDF
2N2222 application note emitter follower Abstract: PNP Transistor 2N2222 equivalent 2n2222 npn transistor general purpose LM195 AN-110 LM105 Pin layout for a 2N2222 transistor A0830 Text: National Semiconductor Application Note 110 April 1998 INTRODUCTION Overload protection is perhaps most necessary in power circuitry. This is shown by recent trends in power transistor technology. Safe-area, voltage and current handling capability have been increased to limits far in excess of package	Original		PDF
Untitled Abstract: No abstract text available Text: MJL4281A NPN MJL4302A (PNP) Complementary NPN-PNP Silicon Power Bipolar Transistors The MJL4281A and MJL4302A are power transistors for high power audio. Features • 350 V Collector−Emitter Sustaining Voltage • Gain Complementary: • • • • Gain Linearity from 100 mA to 5 A	Original	MJL4281A MJL4302A MJL4281A MJL4302A O-264 MJL4281A/D	PDF
2N2222 die Abstract: light activated switch 2N2222 application note emitter follower AN-110 LM105 LM195 2N2222 NPN Transistor features 12v bulb national 2n2222 equivalent component of transistor 2N2222 Text: INTRODUCTION Overload protection is perhaps most necessary in power circuitry. This is shown by recent trends in power transistor technology. Safe-area, voltage and current handling capability have been increased to limits far in excess of package power dissipation. In RF transistors, devices are now available and able to withstand badly mismatched loads without	Original	an007418 2N2222 die light activated switch 2N2222 application note emitter follower AN-110 LM105 LM195 2N2222 NPN Transistor features 12v bulb national 2n2222 equivalent component of transistor 2N2222	PDF
transistor a750 Abstract: No abstract text available Text: NSS40302PDR2G Complementary 40 V, 6.0 A, Low VCE sat Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed	Original	NSS40302PDR2G NSS40302P/D transistor a750	PDF
C40302 Abstract: NSS40302PDR2G Text: NSS40302PDR2G Complementary 40 V, 6.0 A, Low VCE sat Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed	Original	NSS40302PDR2G NSS40302P/D C40302 NSS40302PDR2G	PDF
Untitled Abstract: No abstract text available Text: NSS40302PDR2G Complementary 40 V, 6.0 A, Low VCE sat Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed	Original	NSS40302PDR2G NSS40302P/D	PDF
NJX1675PDR2G Abstract: No abstract text available Text: NJX1675PDR2G Product Preview Complementary 30 V, 6.0 A, Transistor These devices are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications are low voltage motor controls in mass storage	Original	NJX1675PDR2G NJX1675P/D NJX1675PDR2G	PDF
Untitled Abstract: No abstract text available Text: MJE4343 NPN , MJE4353 (PNP) High-Voltage - High Power Transistors . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. http://onsemi.com Features 16 AMPS POWER TRANSISTORS COMPLEMENTARY SILICON 160 VOLTS	Original	MJE4343 MJE4353 MJE4343 MJE4353 OT-93 MJE4343/D	PDF
2SA2160 Abstract: 2SA2149 2SC6005 RQW200 rdx100n45 RQA200N03 rqw200n03 RLA130N03 rdx*100n45 2sc6027 Text: 2005 Transistor New Products Ver.1 MOS FET Series Low VCE sat Miniature Digital Transistor Series Low VCE(sat) Transistor Series Endured Discharge Voltage/ High Speed Switching/ Low Noise Transistor Series Muting Transistor Series MOS FET TUMT/TSMT Series	Original	O-220FM 47P4869E 2SA2160 2SA2149 2SC6005 RQW200 rdx100n45 RQA200N03 rqw200n03 RLA130N03 rdx*100n45 2sc6027	PDF

MJ3281A Abstract: MJ1302A Motorola Bipolar Power Transistor Data complementary npn-pnp power transistors transistor pnp 3015 MJ1302 LOW FREQUENCY POWER bipolar npn TRANSISTOR to3 motorola bipolar transistor Motorola Power Transistor Text: MOTOROLA Order this document by MJ3281A/D SEMICONDUCTOR TECHNICAL DATA NPN Designer's MJ3281A* PNP MJ1302A*  Data Sheet Complementary NPN-PNP Silicon Power Bipolar Transistor *Motorola Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS	Original	MJ3281A/D MJ3281A* MJ1302A* MJ3281A MJ1302A 204AA MJ3281A/D* Motorola Bipolar Power Transistor Data complementary npn-pnp power transistors transistor pnp 3015 MJ1302 LOW FREQUENCY POWER bipolar npn TRANSISTOR to3 motorola bipolar transistor Motorola Power Transistor	PDF
MJD253 Abstract: No abstract text available Text: MJD243 NPN , MJD253 (PNP) Preferred Device Complementary Silicon Plastic Power Transistor DPAK−3 for Surface Mount Applications Designed for low voltage, low−power, high−gain audio amplifier applications. Features http://onsemi.com 4.0 A, 100 V, 12.5 W	Original	MJD243 MJD253 MJD243 MJD253	PDF
NJX1675PDR2G Abstract: No abstract text available Text: NJX1675PDR2G Complementary 30 V, 6.0 A, Transistor These devices are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications are low voltage motor controls in mass storage	Original	NJX1675PDR2G NJX1675P/D NJX1675PDR2G	PDF
2n6520 Abstract: No abstract text available Text: ON Semiconductort NPN 2N6515 2N6517 PNP 2N6520 High Voltage Transistors MAXIMUM RATINGS Symbol 2N6515 2N6517 2N6520 Unit Collector–Emitter Voltage VCEO 250 350 Vdc Collector–Base Voltage VCBO 250 350 Vdc Emitter–Base Voltage 2N6515, 2N6516, 2N6517 2N6519, 2N6520	Original	2N6515, 2N6516, 2N6517 2N6519, 2N6520 2N6515	PDF
MJL3281A MJL1302A Abstract: positioner MJL1302A MJL3281A complementary npn-pnp power transistors Text: ON Semiconductort NPN MJL3281A* PNP MJL1302A* Complementary NPN-PNP Silicon Power Bipolar Transistor *ON Semiconductor Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS The MJL3281A and MJL1302A are PowerBaset power transistors	Original	MJL3281A* MJL1302A* MJL3281A MJL1302A r14525 MJL3281A/D MJL3281A MJL1302A positioner complementary npn-pnp power transistors	PDF
2N5153 Abstract: No abstract text available Text: PNP SILICON TRANSISTOR HIGH-FREQUENCY POWER TRANSISTORS • 15 m J Reverse Energy Rating with Ic = 10 A and 4 V Reverse Bias MAXIMUM RATINGS Rating Collector-Em itter Voltage 1 Collector-Base Voltage Emitter-Base Voltage Collector C u rren t - Continuous	OCR Scan	2N5153	PDF
chip die npn transistor Abstract: MM1007 Text: 0PLESSEY FEBRUARY 1989 Semiconductors MM Series Macrochip Analog Semicustom Arrays DESCRIPTION The MM "Macrochip" series utilizes a standard bipolar pro cess allowing for operation at voltages up to 20V. Typical circuit blocks for the MM series include pre-amplifiers, com	OCR Scan	PS2314, chip die npn transistor MM1007	PDF
Untitled Abstract: No abstract text available Text: KSB817 PNP PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER • High Current Capability • High Power Dissipation • Complementary to KSD1047 ABSOLUTE MAXIMUM RATINGS C haracteristic Symbol Rating U nit Collector Base Voltage VcBO - 160	OCR Scan	KSB817 KSD1047	PDF
op amp 741 model PSpice Abstract: pnp transistor 3609 pnp npn dual emitter connected plessey capacitor MM-10004 transistor 2x MM1008 DN660 me 4946 operational amplifier discrete schematic Text: Q PLESSEY FEBRUARY 1989 Semiconductors MM Series Macrochip Analog Semicustom Arrays DESCRIPTION The MM "Macrochip" series utilizes a standard bipolar pro cess allowing for operation at voltages up to 20V. Typical circuit blocks for the MM series include pre-amplifiers, com	OCR Scan	PS2314, op amp 741 model PSpice pnp transistor 3609 pnp npn dual emitter connected plessey capacitor MM-10004 transistor 2x MM1008 DN660 me 4946 operational amplifier discrete schematic	PDF
Untitled Abstract: No abstract text available Text: GEC P L E S S E Y S E M I C O N D S 31E D • 37bfl522 D O l l b i ? fl ■ O PLESSEY T -4 2 -z i FEBRUARY 1989 Semiconductors MM Series Macrochip Analog Sem icustom Arrays DESCRIPTION The MM "Macrochip" series utilizes a standard bipolar pro cess allowing for operation at voltages up to 20V. Typical	OCR Scan	37bfl522 thoro444410 PS2314,	PDF

Privacy Settings

PNP HIGH EMITTER BASE VOLTAGE 15 VOLT Search Results

PNP HIGH EMITTER BASE VOLTAGE 15 VOLT Result Highlights (5)

PNP HIGH EMITTER BASE VOLTAGE 15 VOLT Datasheets Context Search

sm 170 380

mjl4281

MJL4281A

IC 7418

MJL4302AG

2N2222 application note emitter follower

Untitled

2N2222 die

transistor a750

C40302

Untitled

NJX1675PDR2G

Untitled

2SA2160

MJ3281A

MJD253

NJX1675PDR2G

2n6520

MJL3281A MJL1302A

2N5153

chip die npn transistor

Untitled

op amp 741 model PSpice

Untitled