Untitled
Abstract: No abstract text available
Text: SIEMENS SMBT 2907A PNP Silicon Switching Transistor • High DC current gain: 0.1 mA to 500 mA • Low collector-em itter saturation voltage • C om plem entary type: SM BT 2222A NPN Type Marking Ordering Code Pin Configuration SM BT 2907A s2F Q 68000-A6474
|
OCR Scan
|
68000-A6474
OT-23
|
PDF
|
2907A
Abstract: 2907a TRANSISTOR PNP transistor s2f S2F MARKING SOT23 2907a transistor npn 2907A S2F SOT-23 s2F SOT23 PNP 2907a SOT23 Q68000-A6474
Text: SMBT 2907A PNP Silicon Switching Transistor 3 • High DC current gain: 0.1mA to 500 mA • Low collector-emitter saturation voltage • Complementary type: SMBT 2222A NPN 2 1 Type Marking Ordering Code Pin Configuration SMBT 2907A s2F 1=B Q68000-A6474 2=E
|
Original
|
Q68000-A6474
VPS05161
OT-23
Jan-22-1999
2907/A
EHP00754
2907A
2907a TRANSISTOR PNP
transistor s2f
S2F MARKING SOT23
2907a transistor
npn 2907A
S2F SOT-23
s2F SOT23
PNP 2907a SOT23
Q68000-A6474
|
PDF
|
2907a TRANSISTOR PNP
Abstract: 2907a transistor s2f sot-23 marking 2907A symbol TRANSISTOR S2F
Text: SIEMENS SMBT 2907A PNP Silicon Switching Transistor • High DC current gain: 0.1mA to 500 mA • Low collector-emitter saturation voltage • Complementary type: S M B T 2222A NPN Type Marking Ordering Code Pin Configuration S M B T 2907A s2F Q68000-A6474
|
OCR Scan
|
Q68000-A6474
OT-23
Jan-22-1999
EHPGQ751
2907a TRANSISTOR PNP
2907a transistor
s2f sot-23 marking
2907A symbol
TRANSISTOR S2F
|
PDF
|
2907 TRANSISTOR PNP
Abstract: 2907a 2907 2907a transistor 2907a TRANSISTOR PNP npn 2907A TRANSISTOR S2F a 2907 MARKING 2907A transistor 2907
Text: SMBT 2907A PNP Silicon Switching Transistor 3 • High DC current gain: 0.1mA to 500 mA • Low collector-emitter saturation voltage • Complementary type: SMBT 2222A NPN 2 1 Type Marking SMBT 2907A s2F Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT-23
|
Original
|
VPS05161
OT-23
2907/A
EHP00752
EHP00753
Oct-14-1999
EHP00754
2907 TRANSISTOR PNP
2907a
2907
2907a transistor
2907a TRANSISTOR PNP
npn 2907A
TRANSISTOR S2F
a 2907
MARKING 2907A
transistor 2907
|
PDF
|
s02907
Abstract: No abstract text available
Text: r z T SGS-THOMSON Ä 7# MoramiCTiMffloiei S02907 S02907A SMALL SIGNAL PNP TRANSISTORS Type Marking S02907 P05 S O 2907A P03 . SILICON EPITAXIAL PLANAR PNP TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . MEDIUM CURRENT AF AMPLIFICATION
|
OCR Scan
|
S02907
S02907A
S02907
OT-23
S02907/S02907A
OT-23
|
PDF
|
SOT-23 marking p03
Abstract: SO2907 SO2907A npn 2907A 2907AS
Text: SO2907 SO2907A SMALL SIGNAL PNP TRANSISTORS • ■ ■ ■ Type Marking SO2907 P05 SO 2907A P03 SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS MEDIUM CURRENT AF AMPLIFICATION AND SWITCHING NPN COMPLEMENTS ARE RESPECTIVELY
|
Original
|
SO2907
SO2907A
SO2907
OT-23
SOT-23 marking p03
SO2907A
npn 2907A
2907AS
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors MMBT2907LT1 MMBT2907ALT1* COLLECTOR 3 PNP Silicon *Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS 3 1 Rating Symbol 2907 2907A Unit Collector – Emitter Voltage VCEO –40 –60
|
Original
|
MMBT2907LT1
MMBT2907ALT1
236AB)
|
PDF
|
Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistor PNP Silicon LMBT2907LT1G LMBT2907ALT1G S-LMBT2907LT1G S-LMBT2907ALT1G • We declare that the material of product compliance with RoHS requirements. MAXIMUM RATINGS Rating Symbol Value 2907 2907A –40
|
Original
|
LMBT2907LT1G
LMBT2907ALT1G
S-LMBT2907LT1G
S-LMBT2907ALT1G
Alumin2907LT1G
OT-23
|
PDF
|
LMBT2907ALT1G
Abstract: LMBT2907LT1G 1N916 LMBT2907
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistor PNP Silicon LMBT2907LT1G LMBT2907ALT1G • We declare that the material of product compliance with RoHS requirements. 3 MAXIMUM RATINGS Rating Symbol Value 2907 2907A –40 –60 V CEO Collector–Base Voltage
|
Original
|
LMBT2907LT1G
LMBT2907ALT1G
LMBT2907LT1G
OT-23
LMBT2907ALT1G
1N916
LMBT2907
|
PDF
|
2907 TRANSISTOR PNP
Abstract: 1N916 LMBT2907 LMBT2907ALT1 LMBT2907ALT1G LMBT2907LT1 LMBT2907LT1G Lo8.3 LO81
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistor PNP Silicon LMBT2907LT1 LMBT2907ALT1 • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish 3 MAXIMUM RATINGS Rating Symbol Value 2907 2907A Collector–Emitter Voltage V
|
Original
|
LMBT2907LT1
LMBT2907ALT1
LMBT2907LT1
OT-23
2907 TRANSISTOR PNP
1N916
LMBT2907
LMBT2907ALT1
LMBT2907ALT1G
LMBT2907LT1G
Lo8.3
LO81
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MMBT2907 MMBT2907A PNP General Purpose Transistors COLLECTOR 3 3 1 1 BASE 2 SOT-23 2 EMITTER MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC 2907 -40 2907A -60
|
Original
|
MMBT2907
MMBT2907A
OT-23
OT-23
|
PDF
|
MMBT2907
Abstract: MMBT2907A-2F maximum current rating of 2907A pnp transistor MMBT2907A sot-23 15V vebo pnp mmbt2907 2f mmbt2907 2f sot-23
Text: MMBT2907 MMBT2907A COLLECTOR 3 PNP General Purpose Transistors 3 1 1 BASE 2 SOT-23 2 EMITTER MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC 2907 -40 2907A -60
|
Original
|
MMBT2907
MMBT2907A
OT-23
OT-23
MMBT2907
MMBT2907A-2F
maximum current rating of 2907A pnp transistor
MMBT2907A
sot-23 15V vebo pnp
mmbt2907 2f
mmbt2907 2f sot-23
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MMBT2907 MMBT2907A PNP General Purpose Transistors COLLECTOR 3 3 1 1 BASE 2 SOT-23 2 EMITTER MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC 2907 -40 2907A -60
|
Original
|
MMBT2907
MMBT2907A
OT-23
OT-23
|
PDF
|
Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistor PNP Silicon 3 COLLECTOR LMBT2907LT1 LMBT2907ALT1 1 BASE 2 EMITTER 3 MAXIMUM RATINGS Rating Symbol Value 2907 2907A Collector–Emitter Voltage V CEO Collector–Base Voltage V CBO –60 Vdc Emitter–Base Voltage
|
Original
|
LMBT2907LT1
LMBT2907ALT1
LMBT2907LT1
OT-23
|
PDF
|
|
transistor 2222a
Abstract: transistor 2222a CURRENT GAIN EHN0005 2222a sot23 2222A transistor
Text: SIEMENS SMBT 2222A NPN Silicon Switching Transistor • High DC current gain: 0.1mA to 500 mA • Low collector-emitter saturation voltage • Complementary type: SMBT 2907A PNP Type Marking Ordering Code Pin Configuration SMBT 2222A s1 B Q68000-A6481 1=B
|
OCR Scan
|
Q68000-A6481
OT-23
EHN0005
EHN00056
10CK2,
Jan-22-1999
transistor 2222a
transistor 2222a CURRENT GAIN
2222a sot23
2222A transistor
|
PDF
|
CMPT2907A
Abstract: No abstract text available
Text: Central C M P T 2907A sem ico n d u cto r Corp. PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SE M IC O N D U C T O R CMPT2907A type is an PNP silicon transistor manufactu red by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose
|
OCR Scan
|
CMPT2907A
OT-23
500mA
100MHz
150mA,
|
PDF
|
Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistor PNP Silicon LMBT2907LT1G LMBT2907ALT1G • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish 3 MAXIMUM RATINGS Rating Symbol Value 2907 2907A –40 –60 V CEO Collector–Base Voltage
|
Original
|
LMBT2907LT1G
LMBT2907ALT1G
|
PDF
|
transistor 2222a
Abstract: transistor 2222a CURRENT GAIN 2222A transistor 2222a 2907a TRANSISTOR PNP
Text: SMBT 2222A NPN Silicon Switching Transistor 3 • High DC current gain: 0.1mA to 500 mA • Low collector-emitter saturation voltage • Complementary type: SMBT 2907A PNP 2 1 Type Marking SMBT 2222A s1B Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT-23
|
Original
|
VPS05161
OT-23
2222/A
EHP00744
EHP00745
Oct-14-1999
transistor 2222a
transistor 2222a CURRENT GAIN
2222A transistor
2222a
2907a TRANSISTOR PNP
|
PDF
|
T2907A
Abstract: No abstract text available
Text: M O TO R O LA Order this document by MMBT2907LT1/D SEMICONDUCTOR TECHNICAL DATA M M B T 2907L T 1 M M B T2907A LT1* General Purpose Transistors PNP Silicon C0LLECT0R * Motorola Preferred Device % 2 EMITTER MAXIMUM RATINGS Rating Symbol 2907 2907A Unit Collector-Emitter Voltage
|
OCR Scan
|
MMBT2907LT1/D
2907L
T2907A
O-236AB)
|
PDF
|
MMBT2907 2F
Abstract: No abstract text available
Text: M OTO RO LA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors PNP Silicon M M B T2 9 0 7 LT1 M M B T 2 9 0 7 A L T 1* C0LLE CT0R 3 'M o to ro la Preferred D evice MAXIM UM RATINGS Rating Symbol 2907 2907A Unit C ollector-E m itter Voltage v CEO -4 0
|
OCR Scan
|
OT-23
O-236AB)
MMBT2907 2F
|
PDF
|
transistor 3904
Abstract: transistor 2222a transistor 2222a sot 89 sot 23 transistor 70.2 2907a TRANSISTOR PNP pnp transistor 800v 2907A PNP bipolar transistors transistor 5 Amp 700 volt transistor A92 SOT 89 3906 npn
Text: N e w T o T h e 2 3 E D t T i a N - . . c o M Small Signal Transistors High Current NPN and PNP Transistors in an SOT-23 package. These new small signal transistors provide an increased current capability and high hpE- CMPT491E CMPT591E - 1 Amp Low VCE SAT NPN High Current Transistor See page 338.
|
OCR Scan
|
OT-23
CMPT491E
CMPT591E
OT-23
OT-223
CMPTA46
CMPTA96
CZTA46
CZTA96
transistor 3904
transistor 2222a
transistor 2222a sot 89
sot 23 transistor 70.2
2907a TRANSISTOR PNP
pnp transistor 800v
2907A PNP bipolar transistors
transistor 5 Amp 700 volt
transistor A92 SOT 89
3906 npn
|
PDF
|
marking code nt amplifier
Abstract: MARKING 2907A 2907A BF
Text: MMBT2907A PZT2907A C C E E C B TO-92 B B SOT-23 E C SOT-223 Mark: 2F PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63. Absolute Maximum Ratings*
|
Original
|
PN2907A
MMBT2907A
PZT2907A
PN2907A
MMBT2907A
OT-23
OT-223
O-92-3
marking code nt amplifier
MARKING 2907A
2907A BF
|
PDF
|
transistor c-111
Abstract: TRANSISTOR 111
Text: PN2907A / MMBT2907A / PZT2907A 60 V PNP General Purpose Transistor Description Features The PN2907A, MMBT2907A, and PZT2907A are 60 V -PNP bipolar transistors designed for use as a genHigh-Current Gain Bandwidth Product fT : eral-purpose amplifier or switch in applications that
|
Original
|
PN2907A
MMBT2907A
PZT2907A
PN2907A,
MMBT2907A,
PZT2907A
OT-223)
PN2222A,
MMBT2222A,
transistor c-111
TRANSISTOR 111
|
PDF
|
PN2907A
Abstract: PN2222A/2907A
Text: PN2907A / MMBT2907A / PZT2907A 60 V PNP General Purpose Transistor Features Description • High DC Current Gain hFE Range: 100 – 300 The PN2907A, MMBT2907A, and PZT2907A are 60 V -PNP bipolar transistors designed for use as a general-purpose amplifier or switch in applications that
|
Original
|
PN2907A
MMBT2907A
PZT2907A
PN2907A,
MMBT2907A,
PZT2907A
OT-223)
OT-223
PZT2907A)
PN2222A/2907A
|
PDF
|