Untitled
Abstract: No abstract text available
Text: PN2483, PN2484 LOW LEVEL, LOW NOISE NPN SILICON PLANAR TRANSISTORS FEATURES APPLICATIONS • High Breakdown Voltage BV^-gg . . . 6 0 V • Low Level, 'Low Noise Am plifier • High Gain hpg . . . 2 0 0 @ 500m>A ■ Audio Through High Frequency Ranges • Low Noise N.F. . . . 3 dB
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PN2483,
PN2484
O-92A
N2484
BOXt9477
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PN2483
Abstract: PN2484
Text: Mjp*- PN2483, PN2484 -W V ri ii' Jtyv r - , u .• ■ <■ > ’ ■ / / / / j V ' V LOW LEVEL, LOW NOISE ; , ' NPN SILICON PLANAR TRANSISTORS SSiÜi I 11 ftf FEATURES APPLICATIONS • High Breakdown Voltage BVçgQ » . , 60V ■ Low Level, 'Low Noise Amplifier
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PN2483,
PN2484
O-92A
N2484
500jiA,
30MHz
BOXf-9477
PN2483
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Untitled
Abstract: No abstract text available
Text: PN2483, PN2484 LOW LEVEL, LOW NOISE NPN SILICON PLANAR TRANSISTORS FEATURES APPLICATIONS • High Breakdown Voltage BV^-^q . . . 6 0 V • Low Level, 'Low Noise Amplifier • High Gain hpg . . . 2 0 0 @ 500m>A MECHANICAL OUTLINE TO-92A ■ Audio Through High Frequency Ranges
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PN2483,
PN2484
O-92A
N2484
BOXt9477
8-e98EM
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E3510
Abstract: N248 30MHZ PN2483 PN2484
Text: PN2483, PN2484 LOW LEVEL, LOW NOISE NPN SILICON PLANAR TRANSISTORS FEATURES A P PLICA TIO N S • High Breakdown Voltage BV^-gQ . . . 60V • Low Level,'Low Noise Amplifier • High Gain hpg . . . 2 0 0 @ 500m>A ■ Audio Through High Frequency Ranges • Low Noise N.F. . . . 3 dB
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PN2483,
PN2484
O-92A
N2484
50J/A,
30MHZ
BOXt9477
E3510
N248
PN2483
PN2484
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PN2897
Abstract: PN2857
Text: DEVICE TYPE PACKAGE BVCEO BVCBO BVEBO CBO @ VCB IV I M IN I V M IN (V I M IN f« n A ) MAX IV ) HFE @ VC & 1C M IN MA* IV i i * "A i FT COB i |. n m a • lM H ; i PN2353 PN2368 PN2369 PN2369A PN2405 NPN TO-92 (721 NPN TO-92 (72) NPN TO-92 ( 72) NPN TO-92 (72)
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PN2353
PN2368
PN2369
PN2369A
PN2405
PN2475
PN2476
PN2477
PN2481
PN2483
PN2897
PN2857
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cs9011j
Abstract: MPS151 PN5180 MPS4424 BC5608 8c527-25 2N3304 BC5568 PN2897 MPS9633C
Text: CRIMSON SEMICONDUCTOR INC TT DE | 5 5 1 4 0 ^ 2 5 1 4 0 9 6 C R I M S O N S E M I C O N D U C T O R INC D T 99D 00293 DEVICF TYPE PACKAGE By.CEO BVCBO BVEBO ICBO @ VCB IV I M iN IV ! M .N . UN i- A l M Ah |V D0D0ET3 0 6 / - HFE @ VC & iC M Ah .V t—"A •
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2N1507
2N1566
2NI613
2N1889
2N1890
2N1893
2N1973
2N1974
2NI975
O-237
cs9011j
MPS151
PN5180
MPS4424
BC5608
8c527-25
2N3304
BC5568
PN2897
MPS9633C
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sC3228
Abstract: BC286 bc 7-25 pnp MPS9681T BC527-25 BC5508 BC537 BC5568 2N5222 8C416
Text: CRIMSON SEMICONDUCTOR INC TT 25 14 09 6 C R I M S O N S E M I C O N D U C T O R 99D 00293 DEVICF 2N1507 2N1566 2N I613 2 N I7 U 2N1889 2N1890 TYPE NPN NPN NPN NPN NPN PACKAGE DE | S S I M Q T L INC D T Ô / - COB HFE @ VC & iC By.CEO BVCBO BVEBO ICBO @ VCB
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15514CHb
2N1507
2N1566
2NI613
2N1889
2N1890
2N1893
2N1973
2N1974
O-237
sC3228
BC286
bc 7-25 pnp
MPS9681T
BC527-25
BC5508
BC537
BC5568
2N5222
8C416
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BC286
Abstract: 2N3252 2n55s1 2N3304 CS1602B bc3206 MPS9680T BC2388 MPS9681T MPS901
Text: CRIMSON SE M IC ON DU CT OR INC TT DE | SSlMGTt DDDDET3 □ 2514096 C R I M S O N S EM IC O N D U C T O R INC 99D D 00293 T - 2 - 7 - ó / By.CEO BVCBO BVEBO ICBO @ VCB HFE @ VC & iC v COB Vi MiN IV1M.N . MN i-Al MAh (V MIN MA> .V (-*• i|l w»> FT V-'l
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2S14096
2N1507
2N1566
2N1613
2NI711
2N1889
2N1890
2N1893
2N1973
2N1974
BC286
2N3252
2n55s1
2N3304
CS1602B
bc3206
MPS9680T
BC2388
MPS9681T
MPS901
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