PN107F
Abstract: PN108F PNZ107F PNZ108F
Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ107F (PN107F), PNZ108F (PN108F) Silicon planar type PAZ107F For optical control systems 4.5±0.2 • Features 12.7 min. φ4.6±0.15 • Flat window design which is suited to optical systems
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2002/95/EC)
PNZ107F
PN107F)
PNZ108F
PN108F)
PAZ107F
PNZ108F)
MTGFR102-001
PN107F
PN108F
PNZ107F
PNZ108F
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PN107F
Abstract: PN108F PNZ107F PNZ108F Lx 3c paz1
Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ107F (PN107F), PNZ108F (PN108F) Silicon planar type PAZ107F φ4.6±0.15 M Di ain sc te on na tin nc ue e/ d 12.7 min. For optical control systems • Features 3° 1. 0± 0.
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2002/95/EC)
PNZ107F
PN107F)
PNZ108F
PN108F)
PAZ107F
MTGFR102-001
PAZ108F
PN107F
PN108F
PNZ107F
PNZ108F
Lx 3c
paz1
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paz1
Abstract: No abstract text available
Text: Phototransistors PNZ107F PN107F , PNZ108F (PN108F) Silicon planar type PAZ107F For optical control systems 4.5±0.2 • Features 12.7 min. φ4.6±0.15 • Flat window design which is suited to optical systems • Wide directivity characteristics for easy use
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PNZ107F
PN107F)
PNZ108F
PN108F)
PNZ108F)
PAZ107F
paz1
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PN107F
Abstract: PN108F PNZ107F PNZ108F
Text: Phototransistors PNZ107F, PNZ108F PN107F, PN108F Silicon NPN Phototransistors Unit : mm PNZ107F ø4.6±0.15 4.5±0.2 For optical control systems Glass window Features 12.7 min. Flat window design which is suited to optical systems Wide directional sensitivity for easy use
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PNZ107F,
PNZ108F
PN107F,
PN108F)
PNZ107F
PNZ108F)
PN107F
PN108F
PNZ107F
PNZ108F
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ107F (PN107F), PNZ108F (PN108F) Silicon planar type PAZ107F 4.5±0.2 • Features 2.45±0.25 2 0. di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo
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PDF
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2002/95/EC)
PNZ107F
PN107F)
PNZ108F
PN108F)
PAZ107F
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ107F (PN107F), PNZ108F (PN108F) Silicon planar type PAZ107F For optical control systems 4.5±0.2 • Features 12.7 min. φ4.6±0.15 • Flat window design which is suited to optical systems
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2002/95/EC)
PNZ107F
PN107F)
PNZ108F
PN108F)
PNZ108F)
PAZ107F
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PNZ335
Abstract: PN126S PNA1801 PNA1801L LNA1401L cd pick up PNA4602M visible photodetector PNZ334 PN300F
Text: Characteristics List • Photodetector 11 Photodetector ■ PIN Photodiode Absolute Maximum Ratings VR V PD (mW) ID VR max. VR (V) (nA) (V) 30 10 50 Part No. PNA3W01L (PN307) Electro • Optical Characteristics Ta = 25°C IL λP L min. typ. VR (lx) (µA) (nm) (V)
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PNA3W01L
PN307)
PNZ313
PN313)
PNZ300F
PN300F)
PNZ313B
PN313B)
PNZ323
PN323)
PNZ335
PN126S
PNA1801
PNA1801L
LNA1401L
cd pick up
PNA4602M
visible photodetector
PNZ334
PN300F
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Untitled
Abstract: No abstract text available
Text: Panasonic Phototransistors PN107F, PN108F Silicon NPN Phototransistors For optical control systems • Features • F la t w indow d esig n w hich is suited to op tical system s • W ide directio n al sen sitiv ity for easy use • F a st re sp o n se : tr = 8 jlls typ.
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PN107F,
PN108F
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PT-103
Abstract: PH110 PT108A pt77 PH114 PH109 PN101 PN101F PT-101 PT-102
Text: - 288- I 1'J PT108A FH109 PH110 rn n ^ PH1161L PT8L PN101 PN101F PN102F PN102 PN106 PN107 PN108 PN107F PN108F PN10SCL PN109CL PN109F PN109L PN 110 PN111W PN115 PN116 PN120S PN121S PN123S PN126S PN127 PN147 £ tfc B & it & II min mA 'S 0.2 10 0.2 0.04 0.04
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PT108A
PT-101
PH109
PT-101
PH110
PT-70
PT-102
PH1161L)
PT-91
PT-92
PT-103
PH110
PT108A
pt77
PH114
PH109
PN101
PN101F
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2856K
Abstract: PN107F PN108F LX80A
Text: Panasonic Phototransistors PN107F, PN108F Silicon N P N Phototransistors For o ptical control system s • Features • • • • • Flat window design which is suited to optical systems Wide directional sensitivity for easy use Fast response : tr = 8 J,s (typ.
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PN107F,
PN108F
PN108F)
PN108F
VCE-10V
2856K
2856K
PN107F
LX80A
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09874
Abstract: panasonic fk PN107F PN108CL PN108F 60N40 0F83 JW Electronic Systems
Text: - PANASONIC INDL/ELEK-CSEMI} 72C D | 1,132054 0001073 3 6932852 PANASONIC INDLtELECTRONIC VOT'JWX ?2C 09873 * PN107F, PN108F PN 107F, PN108F '> U zi y NPN 7^ h Y =7 T-4I-W / S i NPN Phototransistors &SBfc$üffll$H!§ffl,/For Optical Control Systems • PN 107 F
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b13Sfl54
0Dmfl73
PN107F,
PN108F
PN107F
PN108F
75max
09874
panasonic fk
PN107F
PN108CL
60N40
0F83
JW Electronic Systems
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1k88
Abstract: PN3634 1R88 6N3P PNA4602M
Text: I Phototransistors I PIN Photodiodes for AF, CD, VD, Optical Communications and Control II A p tr.tl e min. typ. lyp. typ. ( m A) (nm) (ns) (deg) PN3104 Flat (Clear) PSD 30 2 2 2 940 8 a 65 PN3106(N) Flat (Clear) PSD 30 2 13 940 5 u Flat (Clear) 2 PN3206
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PN3104
PN3106
PN3206
PN312D
PFES04-1N
PFOS04-2N
PN322D
PN3105
PN3112
1k88
PN3634
1R88
6N3P
PNA4602M
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PN126S
Abstract: ON1503 PN7103
Text: Photo Detectors/Photo Couplers • PIN Photodiodes for AF, CD, VD, Optical ■ Phototransistors Communications and Control A p tr.ti II Appli Package VB Id min. typ. typ. cations Type No. Construciton No. (V) max. (nA) (nm) (ns) PN312C(N) Flat (Clear) 2 division 037 30 20 10 900 10
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PN312C
PN312E
PN3104
PN3106
PN3206
PN312D
PN322D
PN3105
PN3112
PN3108
PN126S
ON1503
PN7103
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PN7103
Abstract: pf204 mr03 C302 C5031 PNA4602M ON1501 PN334 PN106 PNA4602
Text: Photo Detectors/Photo Couplers I Phototransistors I PIN Photodiodes for AF, CD, VD, Optical Communications and Control Appli cations Type No. Flat (Clear) 2 division PF204-3 PN3104 Flat (Clear) PSD PN3106(N) tr.tf typ. (ns) typ 10 PF004-5 22 940 8 Flat (Clear) PSD
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PN101/102*
PN101F/102F*
ML02-1/
ML03-1
MF02-1/
PN312E
PF204-3
PN3104
PFU04-5
PN106*
PN7103
pf204
mr03
C302
C5031
PNA4602M
ON1501
PN334
PN106
PNA4602
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