PN109L
Abstract: PNZ109L K50010
Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ109L (PN109L) Silicon planar type For optical control systems • Features High sensitivity: IL = 3.5 mA (min.) Built-in filter to cutoff visible light for reducing ambient light noise
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2002/95/EC)
PNZ109L
PN109L)
PN109L
PNZ109L
K50010
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ109L (PN109L) Silicon planar type Unit: mm φ4.6±0.15 For optical control systems 6.3±0.3 Glass lens • Features M Di ain sc te on na tin nc ue e/ d 12.7 min. • High sensitivity: ICE(L) = 3.5 mA (min.)
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2002/95/EC)
PNZ109L
PN109L)
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ109L (PN109L) Silicon planar type Unit: mm φ4.6±0.15 For optical control systems 6.3±0.3 Glass lens • Features 12.7 min. • High sensitivity: ICE(L) = 3.5 mA (min.) • Built-in filter to cutoff visible light for reducing ambient light noise
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2002/95/EC)
PNZ109L
PN109L)
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PN109L
Abstract: PNZ109L
Text: Phototransistors PNZ109L PN109L Silicon NPN Phototransistor Unit : mm ø4.6±0.15 Glass lens 6.3±0.3 For optical control systems Features Built-in filter to cutoff visible light for reducing ambient light noise Peak sensitivity wavelength matched with infrared light emitting
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PNZ109L
PN109L)
PN109L
PNZ109L
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PN109L
Abstract: PNZ109L
Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ109L (PN109L) Silicon planar type For optical control systems • Features ue pl d in ea an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low
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2002/95/EC)
PNZ109L
PN109L)
PN109L
PNZ109L
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PN109L
Abstract: PNZ109L
Text: Phototransistors PNZ109L PN109L Silicon planar type Unit: mm φ4.6±0.15 For optical control systems 6.3±0.3 Glass lens • Features 12.7 min. • High sensitivity: ICE(L) = 3.5 mA (min.) • Built-in filter to cutoff visible light for reducing ambient light noise
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PNZ109L
PN109L)
PN109L
PNZ109L
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MIP2F3
Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
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PAMP13-N1
MIP2F3
MIP2F4
MIP382
MIP2E7DMY
mip2f2
mip291
MIP414S
MIP2E5DMY
mip411
MIP3E3SMY equivalent
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mip411
Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
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PAMP13-N1
mip411
MIP2F4
MIP2F3
AN12947a
mip2f2
MIP2F20MS
MIP2F40MS
mip2e7dmy
panasonic inverter dv 700 manual
mip291
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PNZ335
Abstract: PN126S PNA1801 PNA1801L LNA1401L cd pick up PNA4602M visible photodetector PNZ334 PN300F
Text: Characteristics List • Photodetector 11 Photodetector ■ PIN Photodiode Absolute Maximum Ratings VR V PD (mW) ID VR max. VR (V) (nA) (V) 30 10 50 Part No. PNA3W01L (PN307) Electro • Optical Characteristics Ta = 25°C IL λP L min. typ. VR (lx) (µA) (nm) (V)
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PNA3W01L
PN307)
PNZ313
PN313)
PNZ300F
PN300F)
PNZ313B
PN313B)
PNZ323
PN323)
PNZ335
PN126S
PNA1801
PNA1801L
LNA1401L
cd pick up
PNA4602M
visible photodetector
PNZ334
PN300F
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Untitled
Abstract: No abstract text available
Text: Panasonic Phototransistors PN109L Silicon NPN Phototransistor For optical control systems • Features • H igh sensitivity : I Ce l = 3-5 mA (min.) (at L = 100 lx) • Built-in filter to cutoff visible light for reducing am bient light noise • Peak sensitivity w avelength matched with infrared light emitting
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PN109L
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PT-103
Abstract: PH110 PT108A pt77 PH114 PH109 PN101 PN101F PT-101 PT-102
Text: - 288- I 1'J PT108A FH109 PH110 rn n ^ PH1161L PT8L PN101 PN101F PN102F PN102 PN106 PN107 PN108 PN107F PN108F PN10SCL PN109CL PN109F PN109L PN 110 PN111W PN115 PN116 PN120S PN121S PN123S PN126S PN127 PN147 £ tfc B & it & II min mA 'S 0.2 10 0.2 0.04 0.04
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PT108A
PT-101
PH109
PT-101
PH110
PT-70
PT-102
PH1161L)
PT-91
PT-92
PT-103
PH110
PT108A
pt77
PH114
PH109
PN101
PN101F
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phototransistor visible light
Abstract: PN109L
Text: Panasonic Phototransistors PN109L Silicon NPN Phototransistor For optical control system s • F eatures • High sensitivity : I C e l = 3 - 5 mA (min.) (at L = 100 lx) • Built-in filter to cutoff visible light for reducing ambient light noise • Peak sensitivity wavelength matched with infrared light emitting
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PN109L
2856K
phototransistor visible light
PN109L
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3866S
Abstract: transistor a999 bs 7818 -1995 transistor tt 2206 A999 transistor TT 2206 transistor a1535A 8340UAS transistor 3866S 2SD 4515
Text: H Integrated Circuits MOS LSIs Page MOS LSI Type No. Page Type No. Page Type No. Page Type No. Page M N 171608 42 A M N 18P73210 43 M N 3210 69 M N 5179/H 91 M N 171609 42 AM N 18P73215 43 M N 3214 69 MN5181 91 M N 3102 69 M N 53 00 0 Series 55 M N 33 00 Series
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1020G
N12861
N12B62
MN1381
MN13811
MN13821
15P0802
15P5402
58851A
70803A
3866S
transistor a999
bs 7818 -1995
transistor tt 2206
A999 transistor
TT 2206 transistor
a1535A
8340UAS
transistor 3866S
2SD 4515
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transistor 30021
Abstract: PNA4602M
Text: Photo Detectors/Photo S3 • PIN Photodiodes for AF, CD, VD, Optical Communications, Control and Space Transmission Flat (Clear) 2 divisions Flat (Visible light cut) 2 divisions Flat (Visible light cut) 2 divisions Flat (Visible light cut) PSD Flat (Visible light
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PN3206
PN312D
PN322D
PN3112
PN3108
PNA3201F
PN3405
PN316K2
PN3116
PN3624K
transistor 30021
PNA4602M
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PN126S
Abstract: ON1503 PN7103
Text: Photo Detectors/Photo Couplers • PIN Photodiodes for AF, CD, VD, Optical ■ Phototransistors Communications and Control A p tr.ti II Appli Package VB Id min. typ. typ. cations Type No. Construciton No. (V) max. (nA) (nm) (ns) PN312C(N) Flat (Clear) 2 division 037 30 20 10 900 10
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PN312C
PN312E
PN3104
PN3106
PN3206
PN312D
PN322D
PN3105
PN3112
PN3108
PN126S
ON1503
PN7103
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PN7103
Abstract: pf204 mr03 C302 C5031 PNA4602M ON1501 PN334 PN106 PNA4602
Text: Photo Detectors/Photo Couplers I Phototransistors I PIN Photodiodes for AF, CD, VD, Optical Communications and Control Appli cations Type No. Flat (Clear) 2 division PF204-3 PN3104 Flat (Clear) PSD PN3106(N) tr.tf typ. (ns) typ 10 PF004-5 22 940 8 Flat (Clear) PSD
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PN101/102*
PN101F/102F*
ML02-1/
ML03-1
MF02-1/
PN312E
PF204-3
PN3104
PFU04-5
PN106*
PN7103
pf204
mr03
C302
C5031
PNA4602M
ON1501
PN334
PN106
PNA4602
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bt35f
Abstract: mf03 c PNA4602M
Text: Photo Detectors/Photo Couplers I Phototransistors I PIN Photodiodes for AF, CD, VD, Optical Communications and Control Appli cations Type No. PN334 Flat (Clear) 2 division Flat (Clear) PSD Flat (Clear) PSD Flat (Clear) 2 division Flat (Viable light cut) 2 division
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OCR Scan
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PN312E
PN3104
PN3106
PN3206
PN312D
PN322D
PN3105
PN3112
PN3108
PN3107
bt35f
mf03 c
PNA4602M
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AN3962FB
Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Text: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030
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MN101C01C
MN101C01D
MN101C025
MN1020003
MN1020004A
MN1020004AFB
MN1020012A
MN1020
12AFA
MN1020015
AN3962FB
MN1880023
mn19412
MN1874033
IC AN7135
an3814k
MN1883214
an8294nsb
mn4117405
mn171202
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