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    PN102F Search Results

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    PN102F Price and Stock

    Sullins Connector Solutions NPPN102FFKS-RC

    CONN HDR 20POS 0.079 GOLD SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NPPN102FFKS-RC Tube 1,600 1
    • 1 $2.04
    • 10 $2.04
    • 100 $1.70133
    • 1000 $1.32337
    • 10000 $1.0803
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    Sullins Connector Solutions PPPN102FFKS

    CONN HDR 20POS 0.079 GOLD SMD
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    DigiKey PPPN102FFKS Bulk
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    Sullins Connector Solutions PPPN102FJFN

    CONN HDR 20P 0.079 GOLD PCB R/A
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    Sullins Connector Solutions NPPN102FFKP-RC

    CONN HDR 20POS 0.079 GOLD SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NPPN102FFKP-RC Tube 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.12185
    • 10000 $1.12185
    Buy Now

    Sullins Connector Solutions NPPN102FJFN-RC

    CONN HDR 20P 0.079 GOLD PCB R/A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NPPN102FJFN-RC Tube 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.296
    • 10000 $1.296
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    PN102F Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    PN102F Unknown The Optical Devices Data Book (Japanese) Scan PDF
    PN102F Panasonic Photo Detectors / Photo Couplers Scan PDF
    PN102F Panasonic Silicon NPN Phototransistor Scan PDF
    PN102F Panasonic Si NPN phototransistor for optical control systems. Scan PDF

    PN102F Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PN102F

    Abstract: PNZ102F
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ102F (PN102F) Silicon planar type For optical control systems Unit: mm φ4.6±0.15 Glass window • Features ue pl d in ea an c se ed lud pl vi an m m es si tf ed ain ai fo


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    PDF 2002/95/EC) PNZ102F PN102F) PN102F PNZ102F

    PN102F

    Abstract: PNZ102F
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ102F (PN102F) Silicon planar type For optical control systems Unit: mm φ4.6±0.15 Glass window • Features 12.7 min. 4.5±0.2  Low dark current: ICEO = 5 nA (typ.)  Fast response: tr , tr = 3 µs (typ.)


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    PDF 2002/95/EC) PNZ102F PN102F) PN102F PNZ102F

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ102F (PN102F) Silicon planar type For optical control systems Unit: mm φ4.6±0.15 Glass window • Features 12.7 min. M Di ain sc te on na tin nc ue e/ d 4.5±0.2  Low dark current: ICEO = 5 nA (typ.)


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    PDF 2002/95/EC) PNZ102F PN102F)

    Untitled

    Abstract: No abstract text available
    Text: Phototransistors PNZ102F PN102F Silicon planar type For optical control systems Unit: mm φ4.6±0.15 Glass window • Features 12.7 min. 4.5±0.2  Low dark current: ICEO = 5 nA (typ.)  Fast response: tr , tr = 3 µs (typ.)  Wide directivity characteristics


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    PDF PNZ102F PN102F)

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ102F (PN102F) Silicon planar type For optical control systems Unit: mm φ4.6±0.15 Glass window • Features 12.7 min. 4.5±0.2  Low dark current: ICEO = 5 nA (typ.)  Fast response: tr , tr = 3 µs (typ.)


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    PDF 2002/95/EC) PNZ102F PN102F)

    PNZ335

    Abstract: PN126S PNA1801 PNA1801L LNA1401L cd pick up PNA4602M visible photodetector PNZ334 PN300F
    Text: Characteristics List • Photodetector 11 Photodetector ■ PIN Photodiode Absolute Maximum Ratings VR V PD (mW) ID VR max. VR (V) (nA) (V) 30 10 50 Part No. PNA3W01L (PN307) Electro • Optical Characteristics Ta = 25°C IL λP L min. typ. VR (lx) (µA) (nm) (V)


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    PDF PNA3W01L PN307) PNZ313 PN313) PNZ300F PN300F) PNZ313B PN313B) PNZ323 PN323) PNZ335 PN126S PNA1801 PNA1801L LNA1401L cd pick up PNA4602M visible photodetector PNZ334 PN300F

    Untitled

    Abstract: No abstract text available
    Text: Panasonic Phototransistors PN101F, PN102F Silicon NPN Phototransistors For optical control system s • F eatures • F la t w in d o w design w hich is suited to optical system s • L ow d a rk c u r r e n t : I CEO = 5 nA typ. • F a st re sp o n se : tr, tf = 3 (J.s (typ.)


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    PDF PN101F, PN102F PN101

    PT-103

    Abstract: PH110 PT108A pt77 PH114 PH109 PN101 PN101F PT-101 PT-102
    Text: - 288- I 1'J PT108A FH109 PH110 rn n ^ PH1161L PT8L PN101 PN101F PN102F PN102 PN106 PN107 PN108 PN107F PN108F PN10SCL PN109CL PN109F PN109L PN 110 PN111W PN115 PN116 PN120S PN121S PN123S PN126S PN127 PN147 £ tfc B & it & II min mA 'S 0.2 10 0.2 0.04 0.04


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    PDF PT108A PT-101 PH109 PT-101 PH110 PT-70 PT-102 PH1161L) PT-91 PT-92 PT-103 PH110 PT108A pt77 PH114 PH109 PN101 PN101F

    smd transistor A7p

    Abstract: PN101 PN101F PN102F
    Text: Panasonic Phototransistors PN101F, PN102F Silicon NPN Phototransistors For optical control systems • Features • F la t w in d o w design w h ich is suited to optical system s • L ow d ark cu rre n t : ICEO = 5 nA typ. • F a st re sp o n se : tr, tf = 3 |as (typ.)


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    PDF PN101F, PN102F PN102F) PN102F PN101F 2856K smd transistor A7p PN101 PN101F

    "infrared led" 800 nm 980 nm

    Abstract: LN70 emitter "1060 nm" infrared emitting diode led 1060-nm mW LED "1060 nm" LN162S PN101 PN101F PN102F
    Text: _ P A N A S O N I C INDL/EI.rK-fSEMTT- 7 PC Ì | 6932852 PANASONIC I N D L * E L E C T R O N IC '□□□cifl55 1 | 72C 09855 D I'^ 5 * /K 7 LN162S 1 Wl - a LN162S GaAs K/ G a A s Infrared Light Emitting Diode ^ S b lc f t y W lilf f l/F o r Optical Control Systems


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    PDF cifi55 LN162S LN162S "infrared led" 800 nm 980 nm LN70 emitter "1060 nm" infrared emitting diode led 1060-nm mW LED "1060 nm" PN101 PN101F PN102F