PN100
Abstract: No abstract text available
Text: PN100/PN100A/MMBT100/MMBT100A NPN General Purpose Amplifier • • This device is designed for general purpose amplifier applications at collector currents to 300mA. Sourced from process 10. C E TO-92 1 B SOT-23 1. Emitter 2. Base 3. Collector Mark: PN100/PN100A
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PN100/PN100A/MMBT100/MMBT100A
300mA.
OT-23
PN100/PN100A
PN100/PN100A/MMBT100/MMBT100A
PN100
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pnp pn100 transistor
Abstract: PN100 TRANSISTOR transistor pn100 pn200 PN100 PN100A PN200A
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS PN200 PN200A TO-92 Plastic Package EB C COMPLEMENTARY PN100, PN100A ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise
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PN200
PN200A
PN100,
PN100A
C-120
Rev270302D
pnp pn100 transistor
PN100 TRANSISTOR
transistor pn100
pn200
PN100
PN100A
PN200A
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2N3704
Abstract: equivalent transistor 2n3704 PN100
Text: 2N3704 2N3704 B C TO-92 E NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics. Absolute Maximum Ratings* Symbol
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2N3704
PN100
2N3704
equivalent transistor 2n3704
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MPS8098
Abstract: PN100
Text: MPS8098 C TO-92 BE NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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MPS8098
PN100
MPS8098
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CBVK741B019
Abstract: F63TNR PN100 PN2222N PN3642
Text: PN3642 C TO-92 BE NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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PN3642
PN100
CBVK741B019
F63TNR
PN2222N
PN3642
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PN4141
Abstract: CBVK741B019 F63TNR PN100 PN2222N TO-92 Package Dimensions
Text: PN4141 C TO-92 BE NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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PN4141
PN100
PN4141
CBVK741B019
F63TNR
PN2222N
TO-92 Package Dimensions
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2N3859A
Abstract: 2N3859 F63TNR PN100 PN2222N CBVK741B019
Text: 2N3859A E TO-92 CB NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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2N3859A
PN100
2N3859A
2N3859
F63TNR
PN2222N
CBVK741B019
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pn200
Abstract: PN100 PN100A PN200A pnp pn100 transistor transistor pn100
Text: IS/ISO 9002 Lic# QSC/L-000019.3 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP SILICON PLANAR EPITAXIAL TRANSISTORS PN200 PN200A TO-92 Plastic Package EB C COMPLEMENTARY PN100, PN100A ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise
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QSC/L-000019
PN200
PN200A
PN100,
PN100A
C-120
Rev270302D
pn200
PN100
PN100A
PN200A
pnp pn100 transistor
transistor pn100
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2N5172
Abstract: PN100
Text: 2N5172 E TO-92 CB NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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2N5172
PN100
2N5172
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PN100
Abstract: MMBT100 MMBT100A PN100A
Text: PN100 PN100A MMBT100 MMBT100A C E C B TO-92 SOT-23 E B Mark: NA / NA1 NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 10. Absolute Maximum Ratings* Symbol
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PN100
PN100A
MMBT100
MMBT100A
OT-23
PN100
MMBT100
PN100A
MMBT100A
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS PN200 PN200A TO-92 Plastic Package EB C COMPLEMENTARY PN100, PN100A ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise
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PN200
PN200A
PN100,
PN100A
C-120
Rev270302D
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2N5172
Abstract: PN100
Text: 2N5172 2N5172 B C TO-92 E NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics. Absolute Maximum Ratings* Symbol
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2N5172
PN100
2N5172
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Untitled
Abstract: No abstract text available
Text: D825 Flanschdruckmittler mit Sondermaterialien Leistungsmerkmale Druckbereiche von 160 mbar bis 400 bar Medienberührter Bereich Sondermaterialien Temperatur -40°C ….400°C Class 150 bis 2500 NPS 2" bis 3" PN10 bis PN100
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PN100
B16-5
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MMBT100
Abstract: MMBT100A PN100 PN100A
Text: NPN General Purpose Amplifier 3 • This device is designed for general purpose amplifier applications at collector currents to 300mA. • Sourced from process 10. 2 TO-92 1 1. Emitter 2. Base 3. Collector Mark: PN100/PN100A 1 SOT-23 1. Base 2. Emitter 3. Collector
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300mA.
PN100/PN100A
OT-23
MMBT100
MMBT100A
PN100
PN100A
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PN100A
Abstract: MMBT100 MMBT100A PN100 T092
Text: PN100 PN100A MMBT100 MMBT100A S O T -2 3 Marte: N A / N A 1 NPN General Purpose Amplifier PN100 I MMBT100 I PN100AI MMBT100A tu D iscrete P O W E R & S ig n a l Technologies National Semiconductor" This device is designed for general purpose amplifier applications
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OCR Scan
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PN100
PN100A
MMBT100
MMBT100A
OT-23
O-236
SD113D
405ciÃ
PN100A
MMBT100A
T092
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2n5172
Abstract: 2N517
Text: SEMICONDUCTOR ¡m 2N5172 NPN General Purpose Amplifier T his device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics. AbSOlUtG Maximum RâtinÇjS Symbol
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OCR Scan
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2N5172
PN100
2n5172
2N517
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PDF
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2N3704
Abstract: No abstract text available
Text: SEMICONDUCTOR 2N3704 NPN General Purpose Amplifier T his device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics. AbSOlUtG Maximum RâtinÇjS Symbol
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OCR Scan
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2N3704
PN100
2N3704
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PDF
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pn3643
Abstract: No abstract text available
Text: SEMICONDUCTOR PN3643 NPN General Purpose Amplifier T his device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics. AbSOlUtG Maximum RâtinÇjS Symbol
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OCR Scan
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PN3643
PN100
pn3643
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PDF
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SA1 357
Abstract: PN100 PN100A
Text: PN100 PN100A MMBT100 MMBT100A TO-92 SOT-23 Mark: NA/NA1 NPN General Purpose Amplifier This device is designed for general purpose am plifier applications at collector currents to 300 mA. Sourced from Process 10. Absolute Maximum Ratings" Symbol TA=25 ’ C unless otherwise noted
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OCR Scan
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PN100
MMBT100
PN100A
MMBT100A
PN100A
OT-23
may100
SA1 357
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PDF
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TIS98
Abstract: No abstract text available
Text: S E M IC O N D U C T O R TIS98 NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics. AbSOlUtG Maximum RâtinÇjS
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OCR Scan
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TIS98
PN100
TIS98
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PDF
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2N3859A
Abstract: No abstract text available
Text: J*i L J I S 1 IméF * Discrete POW ER & Signal Technologies * I www»pw# SEMICONDUCTOR 2N3859A NPN General Purpose Amplifier T his device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics.
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OCR Scan
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2N3859A
PN100
2N3859A
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PDF
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pn3565
Abstract: No abstract text available
Text: S E M IC O N D U C T O R PN3565 NPN General Purpose Amplifier T his device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics. AbSOlUtG Maximum RâtinÇjS
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OCR Scan
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PN3565
PN100
pn3565
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PDF
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TIS97
Abstract: No abstract text available
Text: S E M IC O N D U C T O R TIS97 NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics. AbSOlUtG Maximum RâtinÇjS
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OCR Scan
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TIS97
PN100
TIS97
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PDF
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Untitled
Abstract: No abstract text available
Text: S E M IC O N D U C T O R MPS8098 NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics. AbSOlUtG Maximum RâtinÇjS
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OCR Scan
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PS8098
MPS8098
PN100
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