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    PMZ390UN Price and Stock

    Nexperia PMZ390UN,315

    MOSFET N-CH 30V 1.78A DFN1006-3
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    DigiKey PMZ390UN,315 Reel 120,000 10,000
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    PMZ390UN,315 Cut Tape 14,963 1
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    PMZ390UN,315 Digi-Reel 1
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    Mouser Electronics PMZ390UN,315 31,162
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    Nexperia PMZ390UNEYL

    MOSFET N-CH 30V 900MA DFN1006-3
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    DigiKey PMZ390UNEYL Cut Tape 11,607 1
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    PMZ390UNEYL Reel 10,000 10,000
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    PMZ390UNEYL Digi-Reel 1
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    Avnet Americas PMZ390UNEYL Reel 4 Weeks 6,010
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    Mouser Electronics PMZ390UNEYL 56,636
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    PMZ390UNEYL 15,655 324
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    PMZ390UNEYL 8,000 1,522
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    PMZ390UNEYL Cut Strips 15,655 8 Weeks 324
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    PMZ390UNEYL 10,000 8 Weeks 10,000
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    PMZ390UNEYL 8,000 1,522
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    Newark PMZ390UNEYL Cut Tape 24,170 5
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    Rochester Electronics PMZ390UNEYL 10,000 1
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    Chip1Stop PMZ390UNEYL 15,655
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    PMZ390UNEYL Cut Tape 7,575
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    EBV Elektronik PMZ390UNEYL 10 Weeks 10,000
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    Nexperia PMZ390UN315

    Trans MOSFET N-CH 30V 1.78A 3-Pin DFN T/R - Tape and Reel (Alt: PMZ390UN,315)
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    Avnet Americas PMZ390UN315 Reel 8 Weeks 20,000
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    PMZ390UN Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Type PDF
    PMZ390UN NXP Semiconductors N-channel TrenchMOS standard level FET - Configuration: Single N-channel ; ID DC: 1.78 A; Qgd (typ): 0.2 nC; RDS(on): 460@4.5 V 560@2.5 V mOhm; VDSmax: 30 V Original PDF
    PMZ390UN NXP Semiconductors NXP power MOSFETs in SOT883 Original PDF
    PMZ390UN,315 NXP Semiconductors N-channel TrenchMOS standard level FET - Configuration: Single N-channel ; ID DC: 1.78 A; Qgd (typ): 0.2 nC; RDS(on): 460@4.5 V 560@2.5 V mOhm; VDSmax: 30 V; Package: SOT883 (SC-101); Container: Tape reel smd Original PDF
    PMZ390UNE/S500315 NXP Semiconductors SMALL SIGNAL N-CHANNEL MOSFET Original PDF
    PMZ390UNEYL Nexperia USA Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 0.9A XQFN3 Original PDF

    PMZ390UN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    JESD625-A

    Abstract: PMZ390UN SC-101
    Text: PMZ390UN N-channel TrenchMOS standard level FET Rev. 01 — 12 July 2007 Product data sheet BOTTOM VIEW 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features


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    PDF PMZ390UN PMZ390UN JESD625-A SC-101

    NX3008NBKMB

    Abstract: BSS138BK BSS84AKS PMV48XP BSH201 2N7002PW nx2301 PMPB27XP PMF170XP 2N7002PS
    Text: Small-signal MOSFET Selection Guide Broad selection of small-signal MOSFETs for a wide range of applications Our advanced MOSFET solutions deliver the flexibility and performance that today´s market demands. Choose from a wide range of general-purpose MOSFET solutions, available in a variety


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    PDF OT223 DFN1006B-3, AEC-Q101 Q3/2012 NX3008NBKMB BSS138BK BSS84AKS PMV48XP BSH201 2N7002PW nx2301 PMPB27XP PMF170XP 2N7002PS

    tea1719

    Abstract: PH1930 nds 3 video guard smart card OPTOCOUPLER SMPS for HDD ph1930al PH2530AL ip4223 SMD 8A TRANSISTOR 702 transistor smd code PH6030AL
    Text: Application Guide Notebook Computing Introduction Your partner for notebook computing Designing notebooks isn’t getting any easier. The footprint continues to shrink, and consumers continue to demand more features, faster speeds, on our decades-long leadership in high-performance mixed-signal solutions,


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    PDF

    prtr5v0u6s

    Abstract: csp1040 TSSOP20 FOOTPRINT ip4065cx11 smd transistor GY sot89 IP4065CX11/LF BV 9y transistor smd IP4058CX8/LF IP4280CZ10 smd transistor GY
    Text: Dark Green − NXP‘s transfer to halogen-free products Why Dark Green? We as NXP are deeply committed to developing eco-friendly products and integrating environmental safety aspects in all manufacturing processes. For our packaging technology this meant a shift to lead-free and halogen-free “Dark Green”, years


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    PDF 2002/95/EC. PMBTA42 PMEG3005EL PMEG6010EP PMR780SN PTVS12VS1UR PZU13y PMBTA42DS PMEG3005ET PMEG6010ER prtr5v0u6s csp1040 TSSOP20 FOOTPRINT ip4065cx11 smd transistor GY sot89 IP4065CX11/LF BV 9y transistor smd IP4058CX8/LF IP4280CZ10 smd transistor GY

    circuit diagram wireless spy camera

    Abstract: PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143
    Text: Discrete Semiconductors Selection Guide 2014 Protection and signal conditioning devices, diodes, bipolar transistors, MOSFETs and thyristors. NXP’s next generation of packaging DFN Discrete Flat No-lead packages – high performance on smallest footprint


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    PDF DFN1006D-2 OD882D) DFN1010D-3 OT1215) DFN2020MD-6 OT1220) DFN1608D-2 OD1608) DSN0603 OD962) circuit diagram wireless spy camera PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143

    PHD78NQ

    Abstract: BUK9507-30B BUK7608-40B PHB27NQ10T PHP18NQ10T ph43 PHD66NQ03LT BUK9575-100A PHP45NQ10TA si2302ds
    Text: Power MOSFET Selection Guide 2009 Smaller, faster, cooler Table of contents 12 V – 25 V N-channel MOSFETs ������������������������������������������������������������������������������������������������������������ 4


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    PDF

    PSMN015-60PS

    Abstract: BUK9507-30B Power MOSFET Selection Guide BSS123 NXP BSH103 BSS84 / BSH201 2N7002CK BSH108 BUK7535-55A PMN38EN
    Text: Power MOSFET Selection Guide 2010 Smaller, faster, cooler 2 Table of contents 12 V – 25 V N-channel MOSFETs ������������������������������������������������������������������������������������������������������������ 4


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    PDF OT404) PHB66NQ03LT OT428) PHD38N02LT PH2520U OT163 PSMN015-60PS BUK9507-30B Power MOSFET Selection Guide BSS123 NXP BSH103 BSS84 / BSH201 2N7002CK BSH108 BUK7535-55A PMN38EN

    BUT11ApX equivalent

    Abstract: PH4030AL philips uhp lamp driver power supply circuit diagram using ic tea1530 BT136 testing power management selection guide BU4508DX equivalent 2n7002 12w nxp BSN304 equivalent bu2508af equivalent
    Text: Power Management selection guide 2008 Leading the power efficient connected world Table of contents Power MOSFETs 4 Automotive MOSFETs 16 Power Bipolar Transistors 20 Complex Discretes 22 Small-signal bipolar transistors 28 SCR's Triacs and Trigger Devices


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    PDF

    2PD601A

    Abstract: 1PS10SB63 SOT346 ZENER 2PC4081 2PC4617M SC-101 SC-75 SC-89 BAT16 stamping process
    Text: SOT88x package platform Maximum functionality, minimum space Philips’ continues to address the trend for smaller, more energyefficient solutions with the launch of its innovative SOT88x package platform. A milestone in package miniaturization, the ultra-small SOT88x brings unique space saving and power


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    PDF OT88x OT88x 2PD601A 1PS10SB63 SOT346 ZENER 2PC4081 2PC4617M SC-101 SC-75 SC-89 BAT16 stamping process

    TRANSISTOR S1A 64 smd

    Abstract: SSOP14 land pattern ip4065cx11 KYS 30-40 4440 IC 5.1 audio amplifier board nx1117 PHD78NQ 1n4148 sod323 t4 NX1117I33Z PMEG3030
    Text: Discrete Semiconductors Selection Guide 2010 Diodes, transistors, ESD and signal conditioning devices Excellence in portfolio and performance Diodes Introducing new package technology Page 7 Portable and increasingly smaller end products fuel the race towards more sophisticated functionality in smaller form


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    PDF OT1061 OT1118 PSSI2021SAY PTVS10VP1UP TRANSISTOR S1A 64 smd SSOP14 land pattern ip4065cx11 KYS 30-40 4440 IC 5.1 audio amplifier board nx1117 PHD78NQ 1n4148 sod323 t4 NX1117I33Z PMEG3030

    biss 0001

    Abstract: PBLS1504V PEMD4 PEMD15 PEMH15 PEMH24 PBLS1503V PEMD6 PEMB10 PMZ250UN marking
    Text: NXP ultra-small diodes and transistors for portable applications Downsize the footprint, boost the performance At NXP, our comprehensive portfolio of ultra-small diodes and transistors enables high performance in increasingly small portable electronics. We safeguard sensitive ICs with advanced


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    PDF Packag35 OT984 HXS0N12) OT985 HXS0N16) biss 0001 PBLS1504V PEMD4 PEMD15 PEMH15 PEMH24 PBLS1503V PEMD6 PEMB10 PMZ250UN marking

    PMZ250UN

    Abstract: PMZ270XN PMZ350XN PMZ390UN PMZ760SN SC-101 SC-75 SC-89 SOT-883
    Text: NXP power MOSFETs in SOT883 The World’s smallest MOSFET For portable applications, board real estate is a critical factor and drives the development of products with ever smaller footprints. However as packages get smaller, the proportion of footprint area occupied by leads becomes more significant. NXP’s latest power


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    PDF OT883 OT883 PMZ250UN PMZ270XN PMZ350XN PMZ390UN PMZ760SN SC-101 SC-75 SC-89 SOT-883

    BSS138 NXP

    Abstract: FDC642P 2n7002 nxp AO3401 BSS123 NXP BSH103 IRLL014N PMV65XP BSH108 BSP250
    Text: NXP small-signal N- and P-channel MOSFETs Small-signal MOSFETs optimized for a broad range of applications Our advanced MOSFET solutions deliver the flexibility and performance that today’s market demands. Choose from a wide range of general-purpose MOSFET solutions, available in a variety


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    PDF OT223 OT883 PHT8N06LT BSP030 PMN50XP PMN55LN PMN34LN BSH103 BSS138 NXP FDC642P 2n7002 nxp AO3401 BSS123 NXP BSH103 IRLL014N PMV65XP BSH108 BSP250

    Untitled

    Abstract: No abstract text available
    Text: AN10910 Protecting charger interfaces and typical battery charging topologies with external bypass transistors Rev. 2 — 23 June 2011 Application note Document information Info Content Keywords BISS, MOSFET-Schottky, low VCEsat, battery charger, Li-Ion battery


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    PDF AN10910

    PHP45NQ10TA

    Abstract: Ph9030l PMV213SN PHD66NQ03LT BUK9507-30B PHD78NQ BSH103 BUK95180-100A PSMN2R8-40PS BSH114
    Text: Power MOSFET Selection Guide 2009 Smaller, faster, cooler Table of contents 12 V – 25 V N-channel MOSFETs ������������������������������������������������������������������������������������������������������������ 4


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    PDF

    BSS84AKS

    Abstract: PHB27NQ10T BUK9575-100A BSS138p infineon PSMN1R5-40 LFPAK footprint Renesas PSMN013-100ES SOT323 MOSFET PH BUK95180-100A NX3008
    Text: Power MOSFET Selection Guide 2012 Smaller, faster, cooler 2 Table of contents 20 V – 25 V N-channel MOSFETs ������������������������������������������������������������������������������������������������������������ 9


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    PDF

    transistor bjt 331

    Abstract: 12v dc to dc mobile charger circuit YDT1591-2006 PMV65XP Drive Base BJT AN10753 prtr5v0 DOUBLE FET PBSS304PX PCF50603
    Text: AN10910 Protecting charger interfaces and typical battery charging topologies with external bypass transistors Rev. 01 — 28 April 2010 Application note Document information Info Content Keywords BISS, Battery charger, Li-Ion battery Li-polymer battery , overvoltage


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    PDF AN10910 AN10910 transistor bjt 331 12v dc to dc mobile charger circuit YDT1591-2006 PMV65XP Drive Base BJT AN10753 prtr5v0 DOUBLE FET PBSS304PX PCF50603