Untitled
Abstract: No abstract text available
Text: MX29F002/002N 2M-BIT [256K x 8] CMOS FLASH MEMORY FEATURES • • • • • • • • 262,144x 8 only Fast access time: 55/70/90/120ns Low power consumption - 30mA maximum active current 5MHz - 1uA typical standby current Programming and erasing voltage 5V ± 10%
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MX29F002/002N
55/70/90/120ns
16K-Byte
32K-Byte
64K-Byte
JUN/11/2002
PM0547
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29F002T
Abstract: No abstract text available
Text: MX29F002/002N 2M-BIT [256K x 8] CMOS FLASH MEMORY FEATURES • • • • • • • • 262,144x 8 only Fast access time: 55/70/90/120ns Low power consumption - 30mA maximum active current 5MHz - 1uA typical standby current Programming and erasing voltage 5V ± 10%
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Original
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PDF
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MX29F002/002N
55/70/90/120ns
16K-Byte
32K-Byte
64K-Byte
JUN/14/2001
PM0547
29F002T
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Untitled
Abstract: No abstract text available
Text: MX29F002/002N 2M-BIT [256K x 8] CMOS FLASH MEMORY FEATURES • • • • • • • • 262,144x 8 only Fast access time: 55/70/90/120ns Low power consumption - 30mA maximum active current 5MHz - 1uA typical standby current Programming and erasing voltage 5V ± 10%
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Original
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PDF
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MX29F002/002N
55/70/90/120ns
16K-Byte
32K-Byte
64K-Byte
30ms--
80us--
100us
PM0547
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29f002
Abstract: No abstract text available
Text: MX29F002/002NT/B 2M-BIT [256K x 8] CMOS FLASH MEMORY FEATURES • • • • • • • • 262,144x 8 only Fast access time: 55/70/90/120ns Low power consumption - 30mA maximum active current 5MHz - 1uA typical standby current Programming and erasing voltage 5V ± 10%
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MX29F002/002NT/B
55/70/90/120ns
16K-Byte
32K-Byte
64K-Byte
n02/002N
MX29F002/002NT/B
NOV/11/2002
PM0547
29f002
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Untitled
Abstract: No abstract text available
Text: INDEX NEW ADVANCED INFORMATION MX29F002/ MX29F002N 2M-BIT[256K x 8] CMOS FLASH MEMORY FEATURES • 262,144x 8 only • Fast access time: 70/90/120ns • Low power consumption – 30mA maximum active current – 1µA typical standby current • Programming and erasing voltage 5V ± 10%
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MX29F002/
MX29F002N
70/90/120ns
16K-Byte
32K-Byte
64K-Byte
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MX29F002BQC-70G
Abstract: 29F002T
Text: MX29F002/002N T/B 2M-BIT [256K x 8] CMOS FLASH MEMORY FEATURES • • • • • • • • 262,144x 8 only Fast access time: 55/70/90/120ns Low power consumption - 30mA maximum active current 5MHz - 1uA typical standby current Programming and erasing voltage 5V ± 10%
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Original
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PDF
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MX29F002/002N
55/70/90/120ns
16K-Byte
32K-Byte
64K-Byte
PM0547
MX29F002BQC-70G
29F002T
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Untitled
Abstract: No abstract text available
Text: MX29F002/002N 2M-BIT [256K x 8] CMOS FLASH MEMORY FEATURES • • • • • • • • 262,144x 8 only Fast access time: 55/70/90/120ns Low power consumption - 30mA maximum active current 5MHz - 1uA typical standby current Programming and erasing voltage 5V ± 10%
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Original
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PDF
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MX29F002/002N
55/70/90/120ns
16K-Byte
32K-Byte
64K-Byte
30ms--
80us--
100us
PM0547
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29F002T
Abstract: 29F002
Text: ADVANCED INFORMATION MX29F002/002N 2M-BIT [256K x 8] CMOS FLASH MEMORY FEATURES • • • • • • • • 262,144x 8 only Fast access time: 55/70/90/120ns Low power consumption - 30mA maximum active current 5MHz - 1uA typical standby current Programming and erasing voltage 5V ± 10%
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Original
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PDF
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MX29F002/002N
55/70/90/120ns
16K-Byte
32K-Byte
64K-Byte
29F002T/B-45
PM0547
29F002T
29F002
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MX29F002NPC-12
Abstract: 29F002T
Text: INDEX ADVANCED INFORMATION MX29F002/002N 2M-BIT [256K x 8] CMOS FLASH MEMORY FEATURES • • • • • • • 262,144x 8 only Fast access time: 70/90/120ns Low power consumption - 30mA maximum active current - 1µA typical standby current Programming and erasing voltage 5V ± 10%
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MX29F002/002N
70/90/120ns
16K-Byte
32K-Byte
64K-Byte
sect/1998
SEP/10/1998
NOV/10/1998
DEC/09/1998
PM0547
MX29F002NPC-12
29F002T
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29f002t
Abstract: No abstract text available
Text: ADVANCED INFORMATION ly p a c MX29F002/002N 2M -B IT [256K x 8] C M O S F L A S H M E M O R Y FEATURES • 2 6 2 ,1 4 4 x 8 only • Fast ac cess tim e: 4 5 7 5 5 /7 0 /9 0 /1 2 0 n s *p le a s e refer • to A C /D C characteristic table Low pow er consum ption
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OCR Scan
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PDF
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MX29F002/002N
PM0547
29f002t
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