29F8100-12
Abstract: MX29F8100 MXIC flash disk controller
Text: INDEX PRELIMINARY MX29F8100 8M-BIT [1M x 8/512K x 16] CMOS SINGLE VOLTAGE FLASH MEMORY FEATURES • • • • • 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance : 10,000 cycles Fast access time: 120/150ns Sector erase architecture - 8 equal sectors of 128k bytes each
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Original
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PDF
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MX29F8100
8/512K
120/150ns
PM0262
29F8100-12
MX29F8100
MXIC flash disk controller
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MX29F8100
Abstract: No abstract text available
Text: PRELIMINARY MX29F8100 8M-BIT [1M x 8/512K x 16] CMOS SINGLE VOLTAGE FLASH MEMORY FEATURES • • • • • 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance : 10,000 cycles Fast access time: 120/150ns Sector erase architecture - 8 equal sectors of 128k bytes each
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Original
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PDF
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MX29F8100
8/512K
bytes/64
100uA
120/150ns
44SOP
MAR/08/1999
PM0262
MX29F8100
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29F8100-12
Abstract: MX29F8100
Text: Introduction Selection Guide PRELIMINARY MX29F8100 8M-BIT 1M x 8/512K x 16 CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • • 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance : 10,000 cycles Fast access time: 120/150ns
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Original
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PDF
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MX29F8100
8/512K
120/150ns
oper887
CA95131
29F8100-12
MX29F8100
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY •U I w l— ■ M X 2 9 F 8 1 OO 8M-BIT [1M x 8/512K x 16] CMOS SINGLE VOLTAGE FLASH MEMORY FEATURES • 5V ± 10% write and erase • Page program operation - Internal address and data latches for 128 bytes/64 words per page - Page programming time: 3ms typical
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OCR Scan
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PDF
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X29F81
8/512K
bytes/64
120/150ns
PM0262
100ns
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