MX29F1610
Abstract: 29F1610-12 00F1H
Text: Introduction Selection Guide MX29F1610 16M-BIT 2M x 8/1M x 16 CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • 5V ± 10% write and erase • JEDEC-standard EEPROM commands • Endurance:10,000 cycles • Fast access time: 120/150ns • Sector erase architecture
|
Original
|
MX29F1610
16M-BIT
120/150ns
150ms
MX29F1610
29F1610-12
00F1H
|
PDF
|
00F1H
Abstract: No abstract text available
Text: • v p a c _MX29F1 610 1 B M -B IT C 2 M x S / 1 M x 1 6 C M O S S IN G U E V O L T A G E F L A S H E E P R O M FEATURES • • • • • • • • • 5V ± 10% write and erase JEDEC-standard EEPROM commands Minimum 1,000/10,000 write/erase cycles
|
OCR Scan
|
MX29F1
100/120/150ns
-100mA
100mA
100ns
00F1H
|
PDF
|
Q20G
Abstract: 00F1H MX-2S
Text: is M « r r c a M FEATURES • • • • • • • • • 5V ± 10% write and erase JEDEC-standard EEPRO M commands Minimum 1,000/10,000 write/erase cycles Fast access time: 100/120/150ns Sector erase architecture - 16 equal sectors of 128k bytes each
|
OCR Scan
|
100/120/150ns
-100mA
100mA
100ns
Q20G
00F1H
MX-2S
|
PDF
|
00F1H
Abstract: No abstract text available
Text: TM M X29F161Q MACftOMX, INC. 1 B IS A -B n tS M x 8 / 1 M x 1 B C M 0 8 S IN G L E V O L T A G E F L A S H E E P R O M FEATURES • • • • • • • • • 5V ± 10% write and erase JEDEC-standard EEPROM commands Minimum 100,000 write/erase cycles
|
OCR Scan
|
X29F161Q
120ns
X29F1610
-100mA
100mA
00F1H
|
PDF
|