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    PLUS2 Search Results

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    PLUS2 Price and Stock

    FTDI Chip USB-COM232-PLUS2

    MOD USB HS RS232 CONVERTER 2 CH
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    DigiKey USB-COM232-PLUS2 Bulk 160 1
    • 1 $42.6
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    Mouser Electronics USB-COM232-PLUS2 728
    • 1 $41.82
    • 10 $39.58
    • 100 $39.57
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    Newark USB-COM232-PLUS2 Bulk 29 1
    • 1 $53.01
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    TME USB-COM232-PLUS2 62 1
    • 1 $38.5
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    Neutron USA USB-COM232-PLUS2
    • 1 $176.98
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    FTDI Chip USB-COM485-PLUS2

    MOD USB HS RS485 CONVERTER 2 CH
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    DigiKey USB-COM485-PLUS2 Bulk 34 1
    • 1 $49.3
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    Mouser Electronics USB-COM485-PLUS2 223
    • 1 $44.91
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    Newark USB-COM485-PLUS2 Bulk 27 1
    • 1 $95.57
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    TME USB-COM485-PLUS2 45 1
    • 1 $49
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    Neutron USA USB-COM485-PLUS2 2
    • 1 $202.21
    • 10 $202.21
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    FTDI Chip USB-COM422-PLUS2

    MOD USB HS RS422 CONVERTER 2 CH
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey USB-COM422-PLUS2 Bulk 29 1
    • 1 $72.7
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    Mouser Electronics USB-COM422-PLUS2 167
    • 1 $66.4
    • 10 $60.4
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    Newark USB-COM422-PLUS2 Bulk 24 1
    • 1 $135.68
    • 10 $101.72
    • 100 $92.46
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    Neutron USA USB-COM422-PLUS2
    • 1 $233.37
    • 10 $233.37
    • 100 $233.37
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    Panduit Corp EMPLUS-2GO

    EASY-MARK PLUS LABELING SOFTWARE
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    DigiKey EMPLUS-2GO Bulk 21 1
    • 1 $466.11
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    Avnet Americas EMPLUS-2GO Roll 8 Weeks 1
    • 1 $354.36
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    Newark EMPLUS-2GO Bulk 1
    • 1 $485.93
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    Master Electronics EMPLUS-2GO 1
    • 1 $461.3
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    Sager EMPLUS-2GO 1
    • 1 $326.17
    • 10 $314.09
    • 100 $310.26
    • 1000 $310.26
    • 10000 $310.26
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    RF Solutions LTD ZETAPLUS20-8D

    RF TXRX MOD ISM<1GHZTHROUGH HOLE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ZETAPLUS20-8D Bag 8 1
    • 1 $23.9
    • 10 $18.774
    • 100 $15.4588
    • 1000 $13.8964
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    Newark ZETAPLUS20-8D Bulk 1 1
    • 1 $18.74
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    PLUS2 Datasheets (25)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PLUS20L8-7A Philips Semiconductors IC CPLD 72GATE 7.5NS 5.25V 28PLCC Original PDF
    PLUS20L8-7A Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    PLUS20L8-7N Philips Semiconductors IC CPLD 72GATE 7.5NS 5.25V 24DIP Original PDF
    PLUS20L8-7N Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    PLUS20L8DA Philips Semiconductors IC CPLD 72GATE 10NS 5.25V 28PLCC Original PDF
    PLUS20L8DA Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    PLUS20L8DN Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    PLUS20R4-7A Philips Semiconductors IC CPLD 72GATE 7.5NS 5.25V 28PLCC Original PDF
    PLUS20R4-7A Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    PLUS20R4-7N Philips Semiconductors IC CPLD 72GATE 7.5NS 5.25V 24DIP Original PDF
    PLUS20R4-7N Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    PLUS20R4DA Philips Semiconductors IC CPLD 72GATE 10NS 5.25V 28PLCC Original PDF
    PLUS20R4DA Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    PLUS20R4DN Philips Semiconductors IC CPLD 72GATE 10NS 5.25V 24DIP Original PDF
    PLUS20R4DN Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    PLUS20R6-7A Philips Semiconductors IC CPLD 72GATE 7.5NS 5.25V 28PLCC Original PDF
    PLUS20R6-7A Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    PLUS20R6-7N Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    PLUS20R6DA Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    PLUS20R6DN Philips Semiconductors IC CPLD 72GATE 10NS 5.25V 24DIP Original PDF

    PLUS2 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    power wizard 1.0 wiring diagram

    Abstract: FT2232H rs422 pinout RS-4221 EIA-422 FT2232 FT232BM FT232R free circuit diagram of USB modem d-type connector mechanical
    Text: Future Technology Devices International Ltd USB-COM422-PLUS2 Datasheet Document Reference No.: FT_000135 Version 1.0 Issue Date: 2009-08-27 Future Technology Devices International Ltd FTDI Unit 1, 2 Seaward Place, Centurion Business Park, Glasgow, G41 1HH, United Kingdom


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    USB-COM422-PLUS2 USB-COM422-PLUS2 power wizard 1.0 wiring diagram FT2232H rs422 pinout RS-4221 EIA-422 FT2232 FT232BM FT232R free circuit diagram of USB modem d-type connector mechanical PDF

    IXFB100N50

    Abstract: No abstract text available
    Text: Advance Technical Information IXFB100N50Q3 HiperFETTM Power MOSFET Q3-Class VDSS ID25 RDS on trr = = ≤ ≤ 500V 100A Ω 49mΩ 250ns N-Channel Enhancement Mode Fast Intrinsic Rectifier PLUS264TM Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


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    IXFB100N50Q3 250ns PLUS264TM 100N50Q3 IXFB100N50 PDF

    CLA80E1200HF

    Abstract: No abstract text available
    Text: CLA80E1200HF High Efficiency Thyristor VRRM = 1200 V I TAV = 80 A VT = 1.38 V Single Thyristor Part number CLA80E1200HF Backside: anode 2 1 3 Features / Advantages: Applications: Package: PLUS247 ● Thyristor for line frequency ● Planar passivated chip


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    CLA80E1200HF PLUS247 60747and unl17 20121221b CLA80E1200HF PDF

    IXFB120N50P2

    Abstract: No abstract text available
    Text: IXFB120N50P2 Polar2TM HiPerFETTM Power MOSFET VDSS ID25 RDS on = 500V = 120A ≤ 43mΩ Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode PLUS264TM Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


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    IXFB120N50P2 PLUS264TM 120N50P2 2-10-A IXFB120N50P2 PDF

    Untitled

    Abstract: No abstract text available
    Text: LinearTM Power MOSFET w/ Extended FBSOA IXTB30N100L VDSS ID25 RDS on D N-Channel Enhancement Mode Avalanche Rated = = ≤ 1000V 30A Ω 450mΩ G PLUS264TM S G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


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    IXTB30N100L PLUS264TM 30N100L 11-27-12-B PDF

    CLA80E1200HF

    Abstract: No abstract text available
    Text: CLA80E1200HF High Efficiency Thyristor VRRM = 1200 V I TAV = 80 A VT = 1.38 V Single Thyristor Part number CLA80E1200HF Backside: anode 2 1 3 Features / Advantages: Applications: Package: PLUS247 ● Thyristor for line frequency ● Planar passivated chip


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    CLA80E1200HF PLUS247 60747and 20121221b CLA80E1200HF PDF

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs Q-Class VDSS ID25 RDS on trr IXFB50N80Q2 N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic RG High dV/dt, Low trr = = ≤ ≤ 800V 50A Ω 160mΩ 300ns PLUS264 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


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    IXFB50N80Q2 300ns PLUS264 50N80Q2 1-18-10-C PDF

    Untitled

    Abstract: No abstract text available
    Text: PolarTM HiPerFETTM Power MOSFETs VDSS ID25 IXFH12N100P IXFV12N100P IXFV12N100PS RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = = ≤ ≤ 1000V 12A Ω 1.05Ω 300ns PLUS220 (IXFV) G Symbol Test Conditions Maximum Ratings VDSS


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    IXFH12N100P IXFV12N100P IXFV12N100PS 300ns PLUS220 12N100P 1-08-A PDF

    IXFB40N110P

    Abstract: IXFB 40N110P 40n110p F40N
    Text: PolarTM Power MOSFET HiPerFETTM IXFB40N110P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1100V 40A Ω 260mΩ 300ns PLUS264TM (IXFB) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ


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    IXFB40N110P 300ns PLUS264TM 40N110P 3-28-08-A IXFB40N110P IXFB 40N110P F40N PDF

    IXFV110N25T

    Abstract: IXFV110N25TS PLUS220SMD
    Text: Preliminary Technical Information IXFV110N25T IXFV110N25TS Trench Gate Power HiperFET VDSS ID25 = 250V = 110A Ω ≤ 24mΩ RDS on N-Channel Enhancement Mode Avalanche Rated PLUS220 (IXFV) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 250


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    IXFV110N25T IXFV110N25TS PLUS220 110N25T 8-11-08-A IXFV110N25T IXFV110N25TS PLUS220SMD PDF

    200N10T

    Abstract: N mosfet 100v 200A IXTV200N10TS PLUS220SMD
    Text: IXTV200N10T IXTV200N10TS TrenchMVTM Power MOSFET VDSS ID25 = 100V = 200A Ω ≤ 5.5mΩ RDS on N-Channel Enhancement Mode Avalanche Rated PLUS220 (IXFV) Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 175°C 100 V VDGR T J = 25°C to 175°C, RGS = 1MΩ


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    IXTV200N10T IXTV200N10TS PLUS220 PLUS220SMD 200N10T 9-30-08-D N mosfet 100v 200A IXTV200N10TS PLUS220SMD PDF

    25N250

    Abstract: IXBX25N250
    Text: Preliminary Technical Information IXBX25N250 High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor VCES = 2500V IC90 = 25A VCE sat ≤ 3.3V PLUS247TM (IXBX) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


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    IXBX25N250 PLUS247TM 25N250 IXBX25N250 PDF

    IXFB80N50Q2

    Abstract: 80N50Q2
    Text: HiPerFETTM Power MOSFETs IXFB80N50Q2 VDSS = ID25 = RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic RG High dV/dt, Low trr 500V 80A Ω 60mΩ 250ns PLUS264TM( IXFB) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


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    IXFB80N50Q2 250ns PLUS264TM( 80N50Q2 7-20-07-F IXFB80N50Q2 PDF

    Untitled

    Abstract: No abstract text available
    Text: CS60-14io1 Thyristor VRRM = 1400 V I TAV = 60 A VT = 1.14 V Single Thyristor Part number CS60-14io1 Backside: anode 2 1 3 Features / Advantages: Applications: Package: PLUS247 ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability


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    CS60-14io1 PLUS247 60747and 20140122a PDF

    Untitled

    Abstract: No abstract text available
    Text: IXFB300N10P PolarTM HiPerFETTM Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = =   100V 300A  5.5m 200ns PLUS264TM Symbol Test Conditions VDSS VDGR TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M


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    IXFB300N10P 200ns PLUS264TM 100ms 300N10P PDF

    Untitled

    Abstract: No abstract text available
    Text: IXSK 40N60BD1 IXSX 40N60BD1 IGBT with Diode PLUS247 TM package Short Circuit SOA Capability VCES IC25 VCE sat tfi(typ) = 600 = 75 = 2.2 = 120 V A V ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW


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    PLUS247 40N60BD1 40N60BD1 247TM PDF

    Untitled

    Abstract: No abstract text available
    Text: GenX3TM 600V IGBT IXGB200N60B3 VCES = IC110 = VCE sat ≤ tfi(typ) = Medium speed low Vsat PT IGBTs 5-40 kHz switching PLUS264TM (IXGB) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1 MΩ 600 600 V V VGES


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    IXGB200N60B3 IC110 183ns PLUS264TM 200N60B3 8-08-A PDF

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFET Q2-Class VDSS = ID25 = RDS on ≤ ≤ trr IXFB70N60Q2 N-Channel Enhancement Mode Avalanche Rated, Low QG, Low Intrinsic RG High dv/dt, Low trr 600V 70A Ω 88mΩ 250ns PLUS264TM Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


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    IXFB70N60Q2 250ns PLUS264TM 70N60Q2 8-08-A PDF

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs VDSS = ID25 = RDS on ≤ ≤ trr IXFB80N50Q2 N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic RG High dV/dt, Low trr 500V 80A Ω 60mΩ 250ns PLUS264TM( IXFB) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


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    IXFB80N50Q2 250ns PLUS264TM( 80N50Q2 7-20-07-F PDF

    Untitled

    Abstract: No abstract text available
    Text: VDSS ID25 IXFB52N90P PolarTM Power MOSFET HiPerFETTM RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 900V 52A Ω 160mΩ 300ns PLUS264TM Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 900 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


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    IXFB52N90P 300ns PLUS264TM 52N90P PDF

    Untitled

    Abstract: No abstract text available
    Text: TrenchTM HiPerFETTM Power MOSFETs VDSS ID25 IXFV110N25T IXFV110N25TS RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = 250V = 110A ≤ 24mΩ Ω PLUS220 (IXFV) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 250


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    IXFV110N25T IXFV110N25TS PLUS220 PLUS220SMD. 110N25T 5-14-12-B PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM VDSS ID25 IXFB300N10P RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 100V 300A Ω 5.5mΩ 200ns PLUS264TM (IXFB) Symbol Test Conditions Maximum Ratings


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    IXFB300N10P 200ns PLUS264TM 100ms 300N10P PDF

    Untitled

    Abstract: No abstract text available
    Text: PolarTM HiPerFETTM Power MOSFET VDSS ID25 IXFB210N20P RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 200V 210A Ω 10.5mΩ 200ns PLUS264TM Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ


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    IXFB210N20P 200ns PLUS264TM 100ms 210N20P 5-10-A PDF

    IXTX24N100

    Abstract: PLUS247 24N100
    Text: Power MOSFET IXTX24N100 VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = = ≤ 1000V 24A Ω 400mΩ PLUS247 Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000 V VGSS Continuous ±20 V VGSM Transient


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    IXTX24N100 PLUS247 24N100 IXTX24N100 PLUS247 PDF