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    PLANAR RF TRANSISTOR Search Results

    PLANAR RF TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    PLANAR RF TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor D 2331

    Abstract: 2331 TRANSISTOR T31B
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC4838 NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC4838 is a silicon NPN epitaxial planar type transistor OUTLINE DRAWING Dimension in mm specifically designed fo r RF power amplifiers in 1.65GHz. 4 + 0.5 C1.5MAX C1.5MAX FEATURES


    OCR Scan     		PDF 2SC4838 2SC4838 65GHz. 65GHz, transistor D 2331 2331 TRANSISTOR T31B

    2SC1947 equivalent

    Abstract: 2sc1947 RF Power Amplifiers 1P H transistor
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC1947 NPN EPITAXIAL PLANAR TYP E DESCRIPTION OUTLINE DRAWING 2SC1947 is a silicon NPN epitaxial planar type transistor designed for industrial use RF power amplifiers on VHF band mobile radio applications. Dimensions in mm


    OCR Scan     		PDF 2SC1947 175MHz 175MHz 2SC1947 2SC1947 equivalent RF Power Amplifiers 1P H transistor

    2SC1729

    Abstract: 1 w NPN EPITAXIAL PLANAR TYPE
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC1729 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1729 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on VHF band mobile radio amplications. Dimensions in mm FEATURES • •


    OCR Scan     		PDF 2SC1729 175MHz 175MHz. T-31E 175MHz 1 w NPN EPITAXIAL PLANAR TYPE

    2sc1968

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC1968A NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1968A is a silicon NPN epitaxial planar type transistor de­ signed for RF power amplifiers on UHF band mobile radio applications. Dimensions in mm FEATURES •


    OCR Scan     		PDF 2SC1968A 2SC1968A 470MHz 470MHz. 2sc1968

    2SC1324

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC1324 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1324 is a silicon NPN epitaxial planar type transistor designed for industrial use RF broadband amplifiers from VHF to UHF band. Dim ensions in mm FEATURES •


    OCR Scan     		PDF 2SC1324 2SC1324 770MHz

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC1968A NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1968A is a silicon NPN epitaxial planar type transistor de­ signed for RF power amplifiers on UHF band mobile radio applications. Dimensions in mm FEATURES •


    OCR Scan     		PDF 2SC1968A 2SC1968A 470MHz 470MHz.

    12w 5d

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC3629 NPN EPITAXIAL PLANAR TY PE DESCRIPTION OUTLINE DRAWING 2SC3629 is a silicon NPN epitaxial planar type transistor designed fo r RF power amplifiers in UHF band 7.2 volts operation applications. Dimensions in mm FEATURES


    OCR Scan     		PDF 2SC3629 2SC3629 520MHz, 12w 5d

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR DG17S24 7S1 2SC1944 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1944 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on HF bandmobile radio applications. Dimension in mm 9.1 ± 0 . 7


    OCR Scan     		PDF DG17S24 2SC1944 2SC1944 27MHz, 27MHz

    2SC2237

    Abstract: 8w RF POWER TRANSISTOR NPN RF TRANSISTOR RF POWER TRANSISTOR NPN vhf 7001k
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC2237 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2237 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in VHF band mobile radio applications. Dimensions in mm FEATURES •


    OCR Scan     		PDF 2SC2237 175MHz 175MHz. 175MHz 2SC2237 8w RF POWER TRANSISTOR NPN RF TRANSISTOR RF POWER TRANSISTOR NPN vhf 7001k

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC2540 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2540 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in VHF band mobile radio applications. Dimensions in mm R1 FEATURES •


    OCR Scan     		PDF 2SC2540 2SC2540 175MHz 175MHz,

    Transistor BFw 92

    Abstract: TRANSISTOR BFW 11 BFW92 bfw glass bfw 10 transistor BFw 92 NPN planar RF transistor bfw 11 bfw 30 transistor BFW 42 transistor
    Text: BFW 92 "W Silizium-NPN-Planar-HF-Transistor Silicon NPN Planar RF Transistor Anwendungen: Hochfrequenzverstärker bis in den GHz-Bereich Applications: RF-amplifier up to G Hz range Besondere Merkmale: Features: • Hohe Leistungsverstärkung • High pow er gain


    OCR Scan     		PDF 596/0776A1 470pF 20x8x0 Transistor BFw 92 TRANSISTOR BFW 11 BFW92 bfw glass bfw 10 transistor BFw 92 NPN planar RF transistor bfw 11 bfw 30 transistor BFW 42 transistor

    2SC730

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC730 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC730 is a silicon NPN epitaxial planar type transistor designed for industrual use RF power amplifiers on VHF band mobile radio applications. Dimensions in mm


    OCR Scan     		PDF 2SC730 2SC730 150MHz

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC1324 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1324 is a silicon NPN epitaxial planar type transistor designed for industrial use RF broadband amplifiers from VHF to UHF band. D im ensions in mm FEATURES •


    OCR Scan     		PDF 2SC1324 2SC1324 770MHz

    2SC730

    Abstract: TRANSISTOR 1P f150m RF NPN POWER TRANSISTOR l band
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC730 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC730 is a silicon NPN epitaxial planar type transistor designed for industrual use RF power amplifiers on VHF band mobile Dimensions in mm radio applications.


    OCR Scan     		PDF 2SC730 2SC730 150MHz TRANSISTOR 1P f150m RF NPN POWER TRANSISTOR l band

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC2056 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2056 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in VHF band portable or hand-held radio applications. Dimensions in mm


    OCR Scan     		PDF 2SC2056 2SC2056 175MHz

    2SC2695

    Abstract: RF POWER TRANSISTOR TIA 80
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC2695 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2695 is a silicon NPN epitaxial planar type transistor designed fo r RF power amplifiers in UHF band m obile radio applications. Dimensions \nmm FEATURES •


    OCR Scan     		PDF 2SC2695 520MHz 520MHz. RF POWER TRANSISTOR TIA 80

    2SC1946A

    Abstract: C 1946A RF TRANSISTOR
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC1946A NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC 1946A is a silicon NPN epitaxial planar type transistor de­ Dimensions in mm signed for RF power amplifiers on V H F band mobile radio applications. FEATURES


    OCR Scan     		PDF 2SC1946A 2SC1946A C 1946A RF TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2S C 2131 NPN EPITAXIAL PLANAR TYP E DESCRIPTION OUTLINE DRAWING 2SC2131 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in UHF band mobile radio applications. Dimensions in mm FEATURES •


    OCR Scan     		PDF 2SC2131 500MHz 150MHz 150MHz 450MHz) 100pF, 01/iF, 200/iF 01/iF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC2097 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2097 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in HF band mobile radio applications. Dimensions in mm R1 FEATURES •


    OCR Scan     		PDF 2SC2097 2SC2097 30MHz 30MHz, 2k3k5k10k

    2SC1969

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC1969 NPN EPITAXIAL PLANAR TY PE DESCRIPTION OUTLINE DRAWING 2SC1969 is a silicon NPN epitaxial planar type transistor designed fo r RF power amplifiers on HF band mobile radio applications. 9.1 ± 0 .7 FEATURES Dimensions i'


    OCR Scan     		PDF 2SC1969 2SC1969 27MHz O-220 27MHz. 150mA

    2SC2086

    Abstract: 50S5 transistor U4 NPN Silicon Epitaxial Planar Transistor to92 2sc2086 transistor
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC2086 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC2086 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in HF band mobile radio applications. Dimensions in mm 05.1 M A X FEATURES


    OCR Scan     		PDF 2SC2086 2SC2086 27MHz 50S5 transistor U4 NPN Silicon Epitaxial Planar Transistor to92 2sc2086 transistor

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC3628 NPN EPITAXIAL PLANAR T Y P E DISCRETION OUTLINE DRAWING 2SC3628 is a silicon NPN epitaxial planar type transistor designed fo r RF power amplifiers in VHF band mobile radio applications. Dim ensions in m m FEATURES •


    OCR Scan     		PDF 2SC3628 2SC3628 175MHz 175MHz.

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC1966 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC1966 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on UHF band mobile radio applications. D im ensions in mm FEATURES •


    OCR Scan     		PDF 2SC1966 2SC1966 470MHz

    2SC2055

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC2055 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC2055 is a silicon NPN epitaxial planar type transistor designed for RF amplifiers on VHF band portable or hand-held radio applications. Dimensions i 0 5 .1 M A X


    OCR Scan     		PDF 2SC2055 2SC2055 175MHz --j25iJ 5k7k10k