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Abstract: No abstract text available
Text: LASER DIODE NX5530SA 1 550 nm InGaAsP MQW-FP LASER DIODE FOR OTDR APPLICATIONS DESCRIPTION The NX5530SA is a 1 550 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode. This device is specified to operate under pulsed condition and designed for light source of Optical Time Domain
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NX5530SA
NX5530SA
PL10700EJ01V0DS
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PX10160E
Abstract: NEC invisible laser radiation NEC DIODE LASER PL10700EJ01V0DS
Text: DATA SHEET LASER DIODE NX5530SA 1 550 nm InGaAsP MQW-FP LASER DIODE FOR OTDR APPLICATIONS DESCRIPTION The NX5530SA is a 1 550 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode. This device is specified to operate under pulsed condition and designed for light source of Optical Time Domain
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NX5530SA
NX5530SA
PX10160E
NEC invisible laser radiation
NEC DIODE LASER
PL10700EJ01V0DS
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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PX10160E
Abstract: PL10700EJ01V0DS
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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